iTeh Standards logo
EURUSD
Your shopping cart is empty.

31.080.01 - Semiconductor devices in general

ICS 31.080.01 Details

Semiconductor devices in general

Halbleiterbauelemente im allgemeinen

Dispositifs a semi-conducteurs en général

Polprevodniški elementi (naprave) na splošno

General Information

Parent
31.080 - Semiconductor devices

e-Library Subscription

Create subscription and get permanent access to documents within 31.080.01 - Semiconductor devices in general

Type
Monthly Subscription
for
seat
×
$ 124.73
$ 124.73

Currently subscription includes documents marked with .We are working on making all documents available within the subscription.

Standardization Organization
Technical Committee
Directive
Mandate
50
IEC
IEC 60749-23:2025(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life

IEC 60749-23:2025 specifies the test used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", can be used to screen for infant-mortality related failures. The detailed use and application of burn-in is outside the scope of this document.
This edition includes the following significant technical changes with respect to the previous edition:
a) absolute stress test definitions and resultant test durations have been updated.

  • Standard
    29 pages
    English language
    sale 15% off
IEC
IEC 60749-21:2025(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability

IEC 60749-21:2025 establishes a standard procedure for determining the solderability of device package terminations that are intended to be joined to another surface using tin-lead (SnPb) or lead-free (Pb-free) solder for the attachment. This test method provides a procedure for “dip and look” solderability testing of through hole, axial and surface mount devices (SMDs) as well as an optional procedure for a board mounting solderability test for SMDs for the purpose of allowing simulation of the soldering process to be used in the device application. The test method also provides optional conditions for ageing. This test is considered destructive unless otherwise detailed in the relevant specification.
NOTE 1 This test method does not assess the effect of thermal stresses which can occur during the soldering process. More details can be found in IEC 60749‑15 or IEC 60749‑20.
NOTE 2 If a qualitative test method is preferred, the Wetting balance test method can be found in IEC 60068-2-69.
This edition includes the following significant technical changes with respect to the previous edition:
- revision to certain operating conditions in line with current working practices.

  • Standard
    61 pages
    English language
    sale 15% off
IEC
IEC 60749-24:2025(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 24: Accelerated moisture resistance - Unbiased HAST

IEC 60749-24:2025 specifies unbiased highly accelerated stress testing (HAST). HAST is performed for the purpose of evaluating the reliability of non-hermetically packaged solid-state devices in humid environments. It is a highly accelerated test which employs temperature and humidity under non-condensing conditions to accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors which pass through it. Bias is not applied in this test to ensure that the failure mechanisms potentially overshadowed by bias can be uncovered (e.g. galvanic corrosion).
This test is used to identify failure mechanisms internal to the package and is destructive.
This edition includes the following significant technical changes with respect to the previous edition:
a) rearrangement of clauses to reposition requirements;
b) addition of two notes to the post-test electrical procedures.

  • Standard
    27 pages
    English language
    sale 15% off
IEC
IEC 60749-7:2025(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases

IEC 60749-7:2025 specifies the testing and measurement of water vapour and other gas content of the atmosphere inside a metal or ceramic hermetically sealed device. The test is used as a measure of the quality of the sealing process and to provide information about the long-term chemical stability of the atmosphere inside the package. It is applicable to semiconductor devices sealed in such a manner but generally only used for high reliability applications such as military or aerospace.
Of particular interest is the measurement of the primary sealing gases (or lack thereof), the moisture content, the presence of bombing gases that are indicative of non-hermeticity (e.g. helium), oxygen to argon ratio indicative of room air ~ 20 to 1 (± 10 %), dissimilar concentration of internally sealed gases (e.g. nitrogen, helium) than originally sealed in the device package, the presence of leak test fluid (i.e. fluorocarbon, helium, air), and all other gases to determine if the device meets the specified moisture, hermeticity and other criteria. Also of interest is the measurement of all the other gases since they reflect upon the quality of the sealing process and provide information about the long-term chemical stability of the atmosphere inside the device. The presence of leak test fluorocarbon vapour in the internal gas analysis (IGA) is an indication of failure to meet leak test requirements of IEC 60749‑8.
This test is destructive.
This edition includes the following significant technical changes with respect to the previous edition:
a) This document has been re-written and rearranged to align with the text of MIL-STD-883, Method 1018.10.
b) Additional detail has been provided in the calibration requirements.

  • Standard
    12 pages
    English language
    sale 15% off
  • Standard
    12 pages
    French language
    sale 15% off
  • Standard
    24 pages
    English and French language
    sale 15% off
IEC
IEC 60749-22-1:2025(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 22-1: Bond strength - Wire bond pull test methods

IEC 60749-22-1:2025 provides a means for determining the strength and failure mode of a wire bonded to, and the corresponding interconnects on, a die or package bonding surface and can be performed on unencapsulated or decapsulated devices. This test method can be performed on gold alloy, copper alloy, and silver alloy thermosonic (ball and stitch) bonds made of wire ranging in diameter from 15 µm to 76 µm (0,000 6" to 0,003"); and on gold alloy, copper alloy, and aluminium alloy ultrasonic (wedge) bonds made of wire ranging in diameter from 18 µm to 600 µm (0,000 7" to 0,024").
This wire bond pull test method is destructive. It is appropriate for use in process development, process control, or quality assurance.
This test method allows for two distinct methods of pulling wires:
a) One method incorporates the use of a hook that is placed under the wire and is then pulled.
b) One method requires that after the wire be cut, a clamp is placed on the wire connected to the bond to be tested, and this clamp is used to pull the wire.
This test method does not include bond strength testing using wire bond shear testing. Wire bond shear testing is described in IEC 60749-22-2.
This first edition, together with the first edition of IEC 60749-22-2:2025, cancels and replaces the first edition of IEC 60749-22 published in 2002.
This edition includes the following significant technical changes with respect to the previous edition:
a) Major update, including new techniques and use of new materials (e.g. copper wire) involving a complete rewrite as two separate subparts (this document and IEC 60749-22-2).
This International Standard is to be used in conjunction with IEC 60749-22-2:2025.

  • Standard
    61 pages
    English language
    sale 15% off
  • Standard
    67 pages
    French language
    sale 15% off
  • Standard
    128 pages
    English and French language
    sale 15% off
IEC
IEC 60749-22-2:2025(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 22-2: Bond strength - Wire bond shear test methods

IEC 60749-22-2:2025 establishes a means for determining the strength of a ball bond to a die or package bonding surface and can be performed on pre-encapsulation or post-encapsulation devices. This measure of bond strength is extremely important in determining two features:
a) the integrity of the metallurgical bond which has been formed, and
b) the quality of ball bonds to die or package bonding surfaces.
This test method covers thermosonic (ball) bonds made with small diameter wire from 15 µm to 76 µm (0,000 6" to 0,003").
This test method can only be used when the bonds are large enough to allow for proper contact with the shear test chisel and when there are no adjacent interfering structures that would hinder the movement of the chisel. For consistent shear results the ball height will be at least 4,0 µm (0,000 6 ") for ball bonds, which is the current state of the art for bond shear test equipment at the time of this revision.
This test method can also be used on ball bonds that have had their wire removed and on to which a second bond wire (typically a stitch bond) is placed. This is known as "stitch on ball" and "reverse bonding". See Annex A for additional information.
The wire bond shear test is destructive. It is appropriate for use in process development, process control, or quality assurance, or both.
This test method can be used on ultrasonic (wedge) bonds, however its use has not been shown to be a consistent indicator of bond integrity. See Annex B for information on performing shear testing on wedge bonds.
This test method does not include bond strength testing using wire bond pull testing. Wire bond pull testing is described in IEC 60749-22-1.
This first edition, together with the first edition of IEC 60749-22-1, cancels and replaces the first edition IEC 60749-22 published in 2002. This International Standard is to be used in conjunction with IEC 60749-22-1:2025.
This edition includes the following significant technical changes with respect to the previous edition:
a) Major update, including new techniques and use of new materials (e.g. copper wire) involving a complete rewrite as two separate subparts (this document and IEC 60749‑22‑1).

  • Standard
    34 pages
    English language
    sale 15% off
  • Standard
    38 pages
    French language
    sale 15% off
  • Standard
    72 pages
    English and French language
    sale 15% off
SIST
SIST EN IEC 62007-2:2025(Main)
Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods (IEC 62007-2:2025)
EN IEC 62007-2:2025

IEC 62007-2:2025 specifies measuring methods for characterizing semiconductor optoelectronic devices that are used in the field of fibre optic digital communication systems and subsystems. This third edition cancels and replaces the second edition published in 2009. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition:
a) Modification of the definition of “optical fibre pigtail” in 3.1.3;
b) Correction of an error in Formula (1) for relative intensity noise;
c) Correction of an error in Formula (5);
d) Correction of errors in the title of Figure 11 and the text of 4.9 (replaced "LD" with "LED");
e) Clarification of how to calculate the 1 dB compression in 4.9;
f) Corrections of the circuit diagrams in Figure 2, Figure 5, Figure 11, Figure 17, Figure 18, Figure 19, Figure 20, and Figure 21;
g) Clarification of the measurement setup in 5.10 (Figure 28).

  • Standard
    43 pages
    English language
    sale 10% off
    e-Library read for
    1 day
CLC
EN IEC 62007-2:2025(Main)
Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods
SIST EN IEC 62007-2:2025

IEC 62007-2:2025 specifies measuring methods for characterizing semiconductor optoelectronic devices that are used in the field of fibre optic digital communication systems and subsystems. This third edition cancels and replaces the second edition published in 2009. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition: a) Modification of the definition of “optical fibre pigtail” in 3.1.3; b) Correction of an error in Formula (1) for relative intensity noise; c) Correction of an error in Formula (5); d) Correction of errors in the title of Figure 11 and the text of 4.9 (replaced "LD" with "LED"); e) Clarification of how to calculate the 1 dB compression in 4.9; f) Corrections of the circuit diagrams in Figure 2, Figure 5, Figure 11, Figure 17, Figure 18, Figure 19, Figure 20, and Figure 21; g) Clarification of the measurement setup in 5.10 (Figure 28).

  • Standard
    43 pages
    English language
    sale 10% off
    e-Library read for
    1 day
SIST
SIST EN IEC 60749-34-1:2025(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 34-1: Power cycling test for power semiconductor module (IEC 60749-34-1:2025)
EN IEC 60749-34-1:2025

IEC 60749-34-1:2025 describes a test method that is used to determine the capability of power semiconductor modules to withstand thermal and mechanical stress resulting from cycling the power dissipation of the internal semiconductors and the internal connectors. It is based on IEC 60749-34, but is developed specifically for power semiconductor module products, including insulated-gate bipolar transistor (IGBT), metal-oxide-semiconductor field-effect transistor (MOSFET), diode and thyristor.
If there is a customer request for an individual use or an application specific guideline (for example ECPE Guideline AQG 324), details of the test method can be based on these requirements if they deviate from the content of this document.
This test caused wear-out and is considered destructive.

  • Standard
    32 pages
    English language
    sale 10% off
    e-Library read for
    1 day
CLC
EN IEC 60749-34-1:2025(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 34-1: Power cycling test for power semiconductor module
SIST EN IEC 60749-34-1:2025

IEC 60749-34-1:2025 describes a test method that is used to determine the capability of power semiconductor modules to withstand thermal and mechanical stress resulting from cycling the power dissipation of the internal semiconductors and the internal connectors. It is based on IEC 60749-34, but is developed specifically for power semiconductor module products, including insulated-gate bipolar transistor (IGBT), metal-oxide-semiconductor field-effect transistor (MOSFET), diode and thyristor. If there is a customer request for an individual use or an application specific guideline (for example ECPE Guideline AQG 324), details of the test method can be based on these requirements if they deviate from the content of this document. This test caused wear-out and is considered destructive.

  • Standard
    32 pages
    English language
    sale 10% off
    e-Library read for
    1 day
SIST
SIST EN IEC 63378-3:2025(Main)
Thermal standardization on semiconductor packages - Part 3: Thermal circuit simulation models of discrete semiconductor packages for transient analysis (IEC 63378-3:2025)
EN IEC 63378-3:2025

IEC 63378-3:2025 specifies the thermal circuit network model of discrete (TO‑243, TO‑252 and TO‑263) packages, which is used in the transient analysis of electronic devices to estimate precise junction temperatures without experimental verification.
This model is intended to be made and provided by semiconductor suppliers and to be used by assembly makers of electronic devices.

  • Standard
    17 pages
    English language
    sale 10% off
    e-Library read for
    1 day
IEC
IEC 62007-2:2025(Main)
Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods

IEC 62007-2:2025 specifies measuring methods for characterizing semiconductor optoelectronic devices that are used in the field of fibre optic digital communication systems and subsystems. This third edition cancels and replaces the second edition published in 2009. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition:
a) Modification of the definition of “optical fibre pigtail” in 3.1.3;
b) Correction of an error in Formula (1) for relative intensity noise;
c) Correction of an error in Formula (5);
d) Correction of errors in the title of Figure 11 and the text of 4.9 (replaced "LD" with "LED");
e) Clarification of how to calculate the 1 dB compression in 4.9;
f) Corrections of the circuit diagrams in Figure 2, Figure 5, Figure 11, Figure 17, Figure 18, Figure 19, Figure 20, and Figure 21;
g) Clarification of the measurement setup in 5.10 (Figure 28).

  • Standard
    42 pages
    English language
    sale 15% off
  • Standard
    43 pages
    French language
    sale 15% off
  • Standard
    85 pages
    English and French language
    sale 15% off
IEC
IEC 60749-34-1:2025(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 34-1: Power cycling test for power semiconductor module

IEC 60749-34-1:2025 describes a test method that is used to determine the capability of power semiconductor modules to withstand thermal and mechanical stress resulting from cycling the power dissipation of the internal semiconductors and the internal connectors. It is based on IEC 60749-34, but is developed specifically for power semiconductor module products, including insulated-gate bipolar transistor (IGBT), metal-oxide-semiconductor field-effect transistor (MOSFET), diode and thyristor.
If there is a customer request for an individual use or an application specific guideline (for example ECPE Guideline AQG 324), details of the test method can be based on these requirements if they deviate from the content of this document.
This test caused wear-out and is considered destructive.

  • Standard
    56 pages
    English and French language
    sale 15% off
CLC
EN IEC 63378-3:2025(Main)
Thermal standardization on semiconductor packages - Part 3: Thermal circuit simulation models of discrete semiconductor packages for transient analysis
SIST EN IEC 63378-3:2025

IEC 63378-3:2025 specifies the thermal circuit network model of discrete (TO‑243, TO‑252 and TO‑263) packages, which is used in the transient analysis of electronic devices to estimate precise junction temperatures without experimental verification. This model is intended to be made and provided by semiconductor suppliers and to be used by assembly makers of electronic devices.

  • Standard
    17 pages
    English language
    sale 10% off
    e-Library read for
    1 day
IEC
IEC 63378-3:2025(Main)
Thermal standardization on semiconductor packages - Part 3: Thermal circuit simulation models of discrete semiconductor packages for transient analysis

IEC 63378-3:2025 specifies the thermal circuit network model of discrete (TO‑243, TO‑252 and TO‑263) packages, which is used in the transient analysis of electronic devices to estimate precise junction temperatures without experimental verification.
This model is intended to be made and provided by semiconductor suppliers and to be used by assembly makers of electronic devices.

  • Standard
    29 pages
    English and French language
    sale 15% off
IEC
IEC 60747-5-4:2022(Main)
Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers

IEC 60747-5-4:2022 specifies the terminology, the essential ratings and characteristics as well as the measuring methods of semiconductor lasers.
This edition includes the following significant technical changes with respect to the previous edition:
- References for the terms and definitions related to the lighting area, IEC 60050-845, are revised based on IEC 60050-845:2020;
- Emission angle is changed to radiation angle in 3.3.2;
- Definitions of rise time and fall time in 3.4.1 are revised based on the publication IEC 60050-521:2002;
- Spectral linewidth is added to Table 1 in Clause 4;
- Conditions for carrier-to-noise ratio of Table 1 in Clause 4 is amended.
- Error in the equation for carrier-to-noise ratio in 5.2.2 is corrected;
- Precaution against the equipment used for carrier-to-noise ratio measurement is added in 5.2.2;
- Explanation for the measurement method of the small signal cut-off frequency in 5.3.2 of the first edition is deleted because it has been defined in the latest version of ISO 11554;
- Reference document for the lifetime in 5.4 is amended;
- Precaution against the measuring arrangement used for the half-intensity width and 1/e2-intensity is added in 5.5.3;
- Reference tables in Annex A, Annex B and Annex C are revised by following the latest version of ISO publications.

  • Standard
    33 pages
    English language
    sale 15% off
  • Standard
    66 pages
    English language
    sale 15% off
IEC
IEC 60747-5-4:2022/AMD1:2024(Amendment)
Amendment 1 - Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
  • Standard
    5 pages
    English language
    sale 15% off
SIST
SIST EN IEC 60747-16-9:2025(Main)
Semiconductor devices - Part 16-9: Microwave integrated circuits - Phase shifters (IEC 60747-16-9:2024)
EN IEC 60747-16-9:2024

IEC 60747-16-9:2024 specifies the terminology, essential ratings, and characteristics, and measuring methods of microwave integrated circuit phase shifters.

  • Standard
    42 pages
    English language
    sale 10% off
    e-Library read for
    1 day
SIST
SIST EN IEC 60747-15:2025(Main)
Semiconductor devices - Part 15: Discrete devices - Isolated power semiconductor devices (IEC 60747-15:2024)
EN IEC 60747-15:2024

IEC 60747-15:2024 gives the requirements for isolated power semiconductor devices. These requirements are additional to those given in other parts of IEC 60747 for the corresponding non-isolated power devices and parts of IEC 60748 for ICs. This third edition includes the following significant technical changes with respect to the previous edition:
a) The intelligent power semiconductor modules (IPM), which was previously excluded from the first and second edition, is now included in this document (Annex C);
b) The thermal resistance is described for each switch (6.2.4);
c) Added isolation test between temperature sensor and terminals, in case there is an agreement with the user (6.1.2).

  • Standard
    61 pages
    English language
    sale 10% off
    e-Library read for
    1 day
IEC
IEC 63378-2-1:2024(Main)
Thermal standardization on semiconductor packages - Part 2-1: 3D thermal simulation models of semiconductor packages for steady-state analysis - Discrete packages

IEC 63378-2-1:2024 specifies three-dimensional (3D) thermal models of discrete semiconductor packages (TO-243, TO-252 and TO-263), utilized in the steady-state thermal analysis of electronic devices to estimate junction temperatures accurately.
This model is assumed to be made by semiconductor suppliers and to be used by assembly makers of electronic devices.

  • Standard
    15 pages
    English language
    sale 15% off
IEC
IEC 60317-68:2017(Main)
Specifications for particular types of winding wires - Part 68: Polyvinyl acetal enamelled rectangular aluminium wire, class 120

IEC 60317-68:2017 specifies the requirements of enamelled rectangular aluminium winding wire of class 120 with a sole coating based on polyvinyl acetal resin, which may be modified providing it retains the chemical identity of the original resin and meets all specified wire requirements. The range of nominal conductor dimensions covered by this standard is
- width: min. 2,0 mm - max. 16,0 mm;
- thickness: min. 0,80 mm - max. 5,60 mm.
Wires of grade 1 and grade 2 are included in this part of IEC 60317 and apply to the complete range of conductors. The specified combinations of width and thickness as well as the specific ratio width/thickness are given in IEC 60317-0-9:2015.

  • Standard
    10 pages
    English language
    sale 15% off
  • Standard
    20 pages
    English language
    sale 15% off
  • Standard
    20 pages
    English and French language
    sale 15% off
  • Standard
    40 pages
    English and French language
    sale 15% off
SIST
SIST EN IEC 60749-5:2024(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test (IEC 60749-5:2023)
EN IEC 60749-5:2024

IEC 60749-5:2023 is available as IEC 60749-5:2023 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.

IEC 60749-5:2023 provides a steady-state temperature and humidity bias life test to evaluate the reliability of non-hermetic packaged semiconductor devices in humid environments. This test method is considered destructive. This edition includes the following significant technical changes with respect to the previous edition:
a) The specification of the test equipment is changed to require the need to minimize relative humidity gradients and maximize air flow between semiconductor devices under test;
b) The specification of the test equipment fixtures is changed to require the avoidance of condensation on devices under test and on electrical fixtures connecting the devices to the test equipment;
c) replacement of references to “virtual junction” with “die”.

  • Standard
    12 pages
    English language
    sale 10% off
    e-Library read for
    1 day
CLC
EN IEC 60749-5:2024(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test
SIST EN IEC 60749-5:2024

IEC 60749-5:2023 is available as IEC 60749-5:2023 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-5:2023 provides a steady-state temperature and humidity bias life test to evaluate the reliability of non-hermetic packaged semiconductor devices in humid environments. This test method is considered destructive. This edition includes the following significant technical changes with respect to the previous edition: a) The specification of the test equipment is changed to require the need to minimize relative humidity gradients and maximize air flow between semiconductor devices under test; b) The specification of the test equipment fixtures is changed to require the avoidance of condensation on devices under test and on electrical fixtures connecting the devices to the test equipment; c) replacement of references to “virtual junction” with “die”.

  • Standard
    12 pages
    English language
    sale 10% off
    e-Library read for
    1 day
IEC
IEC 60749-5:2023(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test

IEC 60749-5:2023 provides a steady-state temperature and humidity bias life test to evaluate the reliability of non-hermetic packaged semiconductor devices in humid environments. This test method is considered destructive. This edition includes the following significant technical changes with respect to the previous edition:
a) The specification of the test equipment is changed to require the need to minimize relative humidity gradients and maximize air flow between semiconductor devices under test;
b) The specification of the test equipment fixtures is changed to require the avoidance of condensation on devices under test and on electrical fixtures connecting the devices to the test equipment;
c) replacement of references to “virtual junction” with “die”.

  • Standard
    26 pages
    English language
    sale 15% off
  • Standard
    17 pages
    English and French language
    sale 15% off
SIST
SIST EN IEC 63287-2:2023(Main)
Semiconductor devices - Guidelines for reliability qualification plans - Part 2: Concept of mission profile (IEC 63287-2:2023)
EN IEC 63287-2:2023

This part of IEC 63287 gives guidelines for the development of reliability qualification plans using the concept of mission profile, based on the environmental conditioning and proposed usage of the product. This document is not intended for military- and space-related applications.

  • Standard
    18 pages
    English language
    sale 10% off
    e-Library read for
    1 day
CLC
EN IEC 63287-2:2023(Main)
Semiconductor devices - Guidelines for reliability qualification plans - Part 2: Concept of mission profile
SIST EN IEC 63287-2:2023

This part of IEC 63287 gives guidelines for the development of reliability qualification plans using the concept of mission profile, based on the environmental conditioning and proposed usage of the product. This document is not intended for military- and space-related applications.

  • Standard
    18 pages
    English language
    sale 10% off
    e-Library read for
    1 day
IEC
IEC 63287-2:2023(Main)
Semiconductor devices - Guidelines for reliability qualification plans - Part 2: Concept of mission profile

IEC 63287-2:2023 gives guidelines for the development of reliability qualification plans using the concept of mission profile, based on the environmental conditioning and proposed usage of the product. This document is not intended for military- and space-related applications.

  • Standard
    30 pages
    English and French language
    sale 15% off
SIST
SIST EN IEC 63364-1:2023(Main)
Semiconductor devices - Semiconductor devices for IoT system - Part 1: Test method of sound variation detection (IEC 63364-1:2022)
EN IEC 63364-1:2023

This part of IEC 63364-1 provides terms, test method, and report of sound variation detection system based on IoT. It provides the evaluation method for each part of the sound variation detection system based on IoT in the block diagram, the characterization parameters, symbols, test setups and the conditions. In addition, this document defines the configuration items and criteria of standard space and firing situation for the quality evaluation measurement of sound field variation detection system with IoT.

  • Standard
    14 pages
    English language
    sale 10% off
    e-Library read for
    1 day
SIST
SIST EN IEC 60747-16-8:2023(Main)
Semiconductor devices - Part 16-8: Microwave integrated circuits - Limiters (IEC 60747-16-8:2022)
EN IEC 60747-16-8:2023

This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit limiters.

  • Standard
    39 pages
    English language
    sale 10% off
    e-Library read for
    1 day
SIST
SIST EN IEC 60747-16-7:2023(Main)
Semiconductor devices - Part 16-7: Microwave integrated circuits - Attenuators (IEC 60747-16-7:2022)
EN IEC 60747-16-7:2023

This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit attenuators.

  • Standard
    44 pages
    English language
    sale 10% off
    e-Library read for
    1 day
SIST
SIST EN 61975:2010/A2:2023(Amendment)
High-voltage direct current (HVDC) installations - System tests (IEC 61975:2010/AMD2:2022)
EN 61975:2010/A2:2022
  • Amendment
    10 pages
    English language
    sale 10% off
    e-Library read for
    1 day
SIST
SIST EN IEC 60749-37:2023(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 37: Board level drop test method using an accelerometer (IEC 60749-37:2022)
EN IEC 60749-37:2022

IEC 60749-37:2022 is available as IEC 60749-37:2022 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.

IEC 60749-37:2022 provides a test method that is intended to evaluate and compare drop performance of surface mount electronic components for handheld electronic product applications in an accelerated test environment, where excessive flexure of a circuit board causes product failure. The purpose is to standardize the test board and test methodology to provide a reproducible assessment of the drop test performance of surface-mounted components while producing the same failure modes normally observed during product level test. This edition includes the following significant technical changes with respect to the previous edition:
- correction of a previous technical error concerning test conditions;
- updates to reflect improvements in technology.

  • Standard
    23 pages
    English language
    sale 10% off
    e-Library read for
    1 day
CLC
EN 61975:2010/A2:2022(Amendment)
High-voltage direct current (HVDC) installations - System tests
SIST EN 61975:2010/A2:2023
  • Amendment
    10 pages
    English language
    sale 10% off
    e-Library read for
    1 day
CLC
EN IEC 60749-37:2022(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 37: Board level drop test method using an accelerometer
SIST EN IEC 60749-37:2023

IEC 60749-37:2022 is available as IEC 60749-37:2022 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-37:2022 provides a test method that is intended to evaluate and compare drop performance of surface mount electronic components for handheld electronic product applications in an accelerated test environment, where excessive flexure of a circuit board causes product failure. The purpose is to standardize the test board and test methodology to provide a reproducible assessment of the drop test performance of surface-mounted components while producing the same failure modes normally observed during product level test. This edition includes the following significant technical changes with respect to the previous edition: - correction of a previous technical error concerning test conditions; - updates to reflect improvements in technology.

  • Standard
    23 pages
    English language
    sale 10% off
    e-Library read for
    1 day
SIST
SIST EN 62007-1:2015/A1:2023(Amendment)
Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Specification template for essential ratings and characteristics (IEC 62007-1:2015/AMD1:2022)
EN 62007-1:2015/A1:2022
  • Amendment
    6 pages
    English language
    sale 10% off
    e-Library read for
    1 day
CLC
EN 62007-1:2015/A1:2022(Amendment)
Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Specification template for essential ratings and characteristics
SIST EN 62007-1:2015/A1:2023
  • Amendment
    6 pages
    English language
    sale 10% off
    e-Library read for
    1 day
IEC
IEC 61975:2010(Main)
High-voltage direct current (HVDC) installations - System tests

IEC 61975:2010 applies to system tests for high-voltage direct current (HVDC) installations which consist of a sending terminal and a receiving terminal, each connected to an a.c. system. The tests specified in this standard are based on bidirectional and bipolar high-voltage direct current (HVDC) installations which consist of a sending terminal and a receiving terminal, each connected to an a.c. system. The test requirements and acceptance criteria should be agreed for back-to-back installations, while multi-terminal systems and voltage sourced converters are not included in this standard. For monopolar HVDC installations, the standard applies except for bipolar tests. This standard only serves as a guideline to system tests for high-voltage direct current (HVDC) installations. The standard gives potential users guidance, regarding how to plan commissioning activities. The tests described in the guide may not be applicable to all projects, but represent a range of possible tests which should be considered. This edition cancels and replaces IEC/PAS 61975 published jointly in 2004 by IEC and CIGRÉ. It constitutes a technical revision incorporating engineering experience.

  • Standard
    79 pages
    English language
    sale 15% off
  • Standard
    165 pages
    English and French language
    sale 15% off
  • Standard
    336 pages
    English and French language
    sale 15% off
  • Standard
    337 pages
    English and French language
    sale 15% off
IEC
IEC 61975:2010/AMD2:2022(Amendment)
Amendment 2 - High-voltage direct current (HVDC) installations - System tests
  • Standard
    14 pages
    English and French language
    sale 15% off
IEC
IEC 60749-37:2022(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 37: Board level drop test method using an accelerometer

IEC 60749-37:2022 provides a test method that is intended to evaluate and compare drop performance of surface mount electronic components for handheld electronic product applications in an accelerated test environment, where excessive flexure of a circuit board causes product failure. The purpose is to standardize the test board and test methodology to provide a reproducible assessment of the drop test performance of surface-mounted components while producing the same failure modes normally observed during product level test. This edition includes the following significant technical changes with respect to the previous edition:
- correction of a previous technical error concerning test conditions;
- updates to reflect improvements in technology.

  • Standard
    67 pages
    English language
    sale 15% off
  • Standard
    43 pages
    English and French language
    sale 15% off
IEC
IEC 62007-1:2015/AMD1:2022(Amendment)
Amendment 1 - Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Specification template for essential ratings and characteristics
  • Standard
    5 pages
    English and French language
    sale 15% off
IEC
IEC 62007-1:2015(Main)
Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Specification template for essential ratings and characteristics

IEC 62007-1:2015 is a specification template for essential ratings and characteristics of the following categories of semiconductor optoelectronic devices to be used in the field of fibre optic systems and subsystems:
- semiconductor photoemitters;
- semiconductor photoelectric detectors;
- monolithic or hybrid integrated optoelectronic devices and their modules. This part of IEC 62007 provides a frame for the preparation of detail specifications for the essential ratings and characteristics. In using this part of IEC 62007, detail specification writers add but do not delete specification parameters and/or groups of specification parameters for particular applications. This third edition cancels and replaces the second edition published in 2008. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition. The definitions of some symbols and terms are revised in order to harmonize them with those in other SC 86C documents; A clause on APD-TIA has been added. Keywords: semiconductor optoelectronic devices, semiconductor photoemitters, semiconductor photoelectric detectors, monolithic or hybrid integrated optoelectronic devices

  • Standard
    66 pages
    English and French language
    sale 15% off
  • Standard
    136 pages
    English and French language
    sale 15% off
SIST
SIST EN IEC 60749-10:2022(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock - Device and subassembly (IEC 60749-10:2022)
EN IEC 60749-10:2022

IEC 60749-10:2022 is intended to evaluate devices in the free state and assembled to printed wiring boards for use in electrical equipment. The method is intended to determine the compatibility of devices and subassemblies to withstand moderately severe shocks. The use of subassemblies is a means to test devices in usage conditions as assembled to printed wiring boards. Mechanical shock due to suddenly applied forces, or abrupt change in motion produced by handling, transportation or field operation can disturb operating characteristics, particularly if the shock pulses are repetitive. This is a destructive test intended for device qualification.
This edition cancels and replaces the first edition published in 2002. This edition includes the following significant technical changes with respect to the previous edition:


       
  1. covers both unattached components and components attached to printed wiring boards;

    2.    
  2. tolerance limits modified for peak acceleration and pulse duration;

    3.    
  3. mathematical formulae added for velocity change and equivalent drop height.

  • Standard
    14 pages
    English language
    sale 10% off
    e-Library read for
    1 day
CLC
EN IEC 60749-10:2022(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock - Device and subassembly
SIST EN IEC 60749-10:2022

IEC 60749-10:2022 is intended to evaluate devices in the free state and assembled to printed wiring boards for use in electrical equipment. The method is intended to determine the compatibility of devices and subassemblies to withstand moderately severe shocks. The use of subassemblies is a means to test devices in usage conditions as assembled to printed wiring boards. Mechanical shock due to suddenly applied forces, or abrupt change in motion produced by handling, transportation or field operation can disturb operating characteristics, particularly if the shock pulses are repetitive. This is a destructive test intended for device qualification. This edition cancels and replaces the first edition published in 2002. This edition includes the following significant technical changes with respect to the previous edition:
covers both unattached components and components attached to printed wiring boards;
tolerance limits modified for peak acceleration and pulse duration;
mathematical formulae added for velocity change and equivalent drop height.

  • Standard
    14 pages
    English language
    sale 10% off
    e-Library read for
    1 day
CLC
EN IEC 60749-18:2019(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose)
SIST EN IEC 60749-18:2019

IEC 60749-18:2019 is available as IEC 60749-18:2019 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-18:2019 provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 (60Co) gamma ray source. Other suitable radiation sources can be used. This document addresses only steady-state irradiations, and is not applicable to pulse type irradiations. It is intended for military- and aerospace-related applications. It is a destructive test. This edition includes the following significant technical changes with respect to the previous edition: - updates to subclauses to better align the test method with MIL-STD 883J, method 1019, including the use of enhanced low dose rate sensitivity (ELDRS) testing; - addition of a Bibliography, which includes ASTM standards relevant to this test method.

  • Standard
    23 pages
    English language
    sale 10% off
    e-Library read for
    1 day
CLC
EN IEC 60749-17:2019(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation
SIST EN IEC 60749-17:2019

The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test. The objectives of the test are as follows: a) to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and b) to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).

  • Standard
    11 pages
    English language
    sale 10% off
    e-Library read for
    1 day
IEC
IEC 60749-10:2022(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock - device and subassembly

IEC 60749-10:2022 is intended to evaluate devices in the free state and assembled to printed wiring boards for use in electrical equipment. The method is intended to determine the compatibility of devices and subassemblies to withstand moderately severe shocks. The use of subassemblies is a means to test devices in usage conditions as assembled to printed wiring boards. Mechanical shock due to suddenly applied forces, or abrupt change in motion produced by handling, transportation or field operation can disturb operating characteristics, particularly if the shock pulses are repetitive. This is a destructive test intended for device qualification.
This edition cancels and replaces the first edition published in 2002. This edition includes the following significant technical changes with respect to the previous edition:
covers both unattached components and components attached to printed wiring boards;
tolerance limits modified for peak acceleration and pulse duration;
mathematical formulae added for velocity change and equivalent drop height.

  • Standard
    24 pages
    English and French language
    sale 15% off
SIST
SIST EN IEC 60749-28:2022(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - Device level (IEC 60749-28:2022)
EN IEC 60749-28:2022

IEC 60749-28:2022 is available as IEC 60749-28:2022 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.

IEC 60749-28:2022 establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application. This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex J. The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD sensitivity levels. This edition includes the following significant technical changes with respect to the previous edition:
- a new subclause and annex relating to the problems associated with CDM testing of integrated circuits and discrete semiconductors in very small packages;
- changes to clarify cleaning of devices and testers.

  • Standard
    51 pages
    English language
    sale 10% off
    e-Library read for
    1 day
CLC
EN IEC 60749-28:2022(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level
SIST EN IEC 60749-28:2022

IEC 60749-28:2022 is available as IEC 60749-28:2022 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-28:2022 establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application. This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex J. The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD sensitivity levels. This edition includes the following significant technical changes with respect to the previous edition: - a new subclause and annex relating to the problems associated with CDM testing of integrated circuits and discrete semiconductors in very small packages; - changes to clarify cleaning of devices and testers.

  • Standard
    51 pages
    English language
    sale 10% off
    e-Library read for
    1 day
IEC
IEC 60749-28:2022(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level

IEC 60749-28:2022 establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application. This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex J. The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD sensitivity levels. This edition includes the following significant technical changes with respect to the previous edition:
- a new subclause and annex relating to the problems associated with CDM testing of integrated circuits and discrete semiconductors in very small packages;
- changes to clarify cleaning of devices and testers.

  • Standard
    147 pages
    English language
    sale 15% off
  • Standard
    98 pages
    English and French language
    sale 15% off
SIST
SIST EN IEC 60749-39:2022(Main)
Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2021)
EN IEC 60749-39:2022

IEC 60749-39:2021 is available as IEC 60749-39:2021 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.

IEC 60749-39:2021 details the procedures for the measurement of the characteristic properties of moisture diffusivity and water solubility in organic materials used in the packaging of semiconductor components. These two material properties are important parameters for the effective reliability performance of plastic packaged semiconductors after exposure to moisture and being subjected to high-temperature solder reflow. This edition includes the following significant technical changes with respect to the previous edition:
- updated procedure for "dry weight" determination.

  • Standard
    15 pages
    English language
    sale 10% off
    e-Library read for
    1 day
50