31.080.99 - Other semiconductor devices
ICS 31.080.99 Details
Other semiconductor devices
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Autres dispositifs a semi-conducteurs
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General Information
In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. This publication describes the guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following:
a) GaN enhancement and depletion-mode discrete power devices [1]
b) GaN integrated power solutions
c) the above in wafer and package levels
Wafer level tests are recommended to minimize parasitic effects when performing high precision measurements. For package level tests, the impact of package thermal characteristics should be considered so as to minimize any device under test (DUT) self-heating implications.
The prescribed test methods may be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.
- Standard16 pagesEnglish languagesale 10% offe-Library read for1 day
IEC 60747-5-14:2022(E) specifies the measuring method of the surface temperature of single LED die or package, based on the thermoreflectance (TR) method. TR is the effect that the reflectance of light changes with the temperature of a substance. This part measures relative change in the reflectance of light from a metal film deposited nearby on the metallurgical pn junction as the relative change in the LED junction temperature. The surface temperature can be approximated as the junction temperature when the thermal resistance effect between the metal surface and the pn junction is negligibly small.
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IEC 63373:2022 In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. IEC 63373:2022 provides guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following:
a) GaN enhancement and depletion-mode discrete power devices;
b) GaN integrated power solutions;
c) the above in wafer and package levels.
The prescribed test methods can be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.
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2021-05-26: This A11 includes the updated Annexes ZA & ZZ, it will allow citation of EN IEC 62031:2020, published without the link to LVD directive
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IEC 62830-8:2021(E) specifies terms, definitions, symbols, test, and evaluation methods used to determine the performance characteristics of flexible and stretchable supercapacitor for practical use in low power electronics such as energy storage devices for energy harvesting, flexible and stretchable electronics, low-power devices, IoT applications, etc. This document is applicable to all the flexible and stretchable supercapacitor for consumers and manufacturers, without any limitations of device technology and size.
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IEC TR 60747-5-12:2021(E) discusses the terminology and the measuring methods of optoelectronic efficiencies of single light emitting diode (LED) chip or package without phosphor. White LEDs for lighting applications are out of the scope of this part.
This technical report provides guidance on
- terminology of optoelectronic efficiencies of single LED chip or package without phosphor, such as the power efficiency (PE), the external quantum efficiency (EQE), the voltage efficiency (VE), the light extraction efficiency (LEE), the internal quantum efficiency (IQE), the injection efficiency (IE), and the radiative efficiency (RE);
- test methods of optoelectronic efficiencies of the PE, the EQE, the VE, the LEE, and the IQE;
- review of various IQE measurement methods reported so far in view of accuracy and practical applicability;
- the measuring method of the LED IQE based on the temperature-dependent electroluminescence (TDEL);
- the measuring method of the LED IQE based on the room-temperature reference-point method (RTRM);
- the measuring method of the radiative and nonradiative currents of an LED;
- the relationship between the IQE and the VE, which leads to introduction of a new LED efficiency, the active efficiency (AE) as AE = VE × IQE.
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IEC 63244-1:2021 provides general requirements and specifications of the semiconductor devices for the performance and reliability evaluations of wireless power transfer and charging systems. For the performance evaluations, this part covers various characterization parameters and symbols, general system diagrams, and test setups and test conditions.
This document also describes classifications of the wireless power transfer technologies.
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IEC 62047-40:2021(E) specifies the test conditions and methods of micro-electromechanical inertial shock switch threshold. This document applies to normally open micro-electromechanical inertial shock switch.
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IEC 60747-5-6:2021 is available as IEC 60747-5-6:2021 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60747-5-6:2021 specifies the terminology, the essential ratings and characteristics, the measuring methods and the quality evaluations of light emitting diodes (LEDs) for general industrial applications such as signals, controllers, sensors, etc.
LEDs for lighting applications are out of the scope of this part of IEC 60747.
LEDs are classified as follows:
- LED package;
- LED flat illuminator;
- LED numeric display and alpha-numeric display;
- LED dot-matrix display;
- infrared-emitting diode (IR LED);
- ultraviolet-emitting diode (UV LED).
LEDs with a heat spreader or having a terminal geometry that performs the function of a heat spreader are within the scope of this part of IEC 60747.
An integration of LEDs and controlgears, integrated LED modules, semi-integrated LED modules, integrated LED lamps or semi-integrated LED lamps, are out of the scope of this part of IEC 60747. This edition includes the following significant technical changes with respect to the previous edition:
- ultraviolet-emitting diodes (UV LED) and their related technical contents were added;
- power efficiency (ηPE) as part of electrical and optical characteristics were added;
- new measuring methods related to thermal resistance were added;
- hydrogen sulphide corrosion test was added to quality evaluation;
- some standards were added to the bibliography.
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IEC 62047-38:2021(E) specifies a test method for measuring the adhesion strength of metal powder paste in the electrical interconnection between micro-electromechanical systems (MEMS) and a circuit board. The typical examples of metal powder paste are anisotropic conductive paste, solder paste, and nanoscale metallic inks. This testing method is valid for metal powder diameters from 10 µm and 500 µm.
In this test method, a uniaxial compression load is applied to metal powder paste using a glass lens simulating an actual MEMS device; then, the adhesion strength is measured by retracting the lens. This test method is proper when the adhesion strength should be analyzed by considering the actual contact area between the MEMS device and metal powder particles.
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IEC 60747-5-13:2021 provides the accelerated test method to assess effects of the tarnishing of silver and silver alloys used for LED packages due to hydrogen sulphide. Particularly, this test method is intended to give information on silver and silver alloy tarnishing effects to the luminous/radiant flux maintenance of LED packages. Additionally, this test method can give information on electric performances of LED packages due to corrosion of silver and silver alloys.
The object of this test is to determine the influence of atmospheres containing hydrogen sulphide on parts of LED packages made of: silver or silver alloy; silver or silver alloy protected with another layer; other metals covered with silver or silver alloy.
Testing other degradations that are susceptible to affect luminous/radiant flux maintenance and/or electric performance (e.g. degradation of copper or silicone parts) is not the object of this test. This test might not be suitable as a general corrosion test, i.e. it might not predict the behaviour of flux and/or electric characteristics and connections in industrial atmospheres. This document is applicable to LED packages for lighting applications only if referenced by an IEC SC 34A document.
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IEC 62047-41:2021 specifies the terminology, essential ratings and characteristics, and measuring methods of RF (Radio Frequency) MEMS (Micro-Electro-Mechanical Systems) circulators and isolators.
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IEC TS 60747-19-2:2021 provides a guideline of indication of specifications of a low-power sensor being a device or a module allowing autonomous power supply operation, which contributes to the low-power design of a smart sensing unit. Here, the smart sensing unit comprises a smart sensor, a terminal module, and a power supply, which can send output data of the smart sensor to the outside. This part also provides a guideline of indication of specifications of the power supply to drive the smart sensor(s) in the smart sensing unit. Based on these, the three components of the smart sensing unit can be easily selected and combined from the point-of-view of newly designed, low-power, smart sensing units.
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IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.
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IEC 62830-7:2021 defines terms, definitions, symbols, configurations, and test methods that can be used to evaluate and determine the performance characteristics of linear sliding mode triboelectric energy harvesting devices for practical use. This document is applicable to energy harvesting devices for consumer, general industries, military and aerospace applications without any limitations on device technology and size.
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IEC 62830-5:2021 specifies the test method for measuring generated electric power from flexible thermoelectric devices under bending conditions. This document provides terms, definitions, symbols, configurations, and test methods that can be used to evaluate and determine the performance of flexible thermoelectric devices. This document also describes the test conditions such as temperature, temperature difference, contact conditions, insulation and bending radius of flexible thermoelectric devices. This document is applicable to flexible energy harvesting devices for flexible semiconductor devices.
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IEC 60747-17:2020 specifies the terminology, essential ratings, characteristics, safety test and the measuring methods of magnetic coupler and capacitive coupler.
It specifies the principles and requirements of insulation and isolation characteristics for magnetic and capacitive couplers for basic insulation and reinforced insulation.
This first edition cancels and replaces IEC PAS 60747-17:2011. This edition constitutes a technical revision.
This edition includes the following significant technical changes with respect to IEC PAS 60747-17:2011:
a) introduced lifetime safety factors for improved life time consideration, to comply with widely recognized aging mechanisms of silicone dioxide (TDDB) and thin film polymer isolation layers;
b) significantly improved "end of life testing" paragraph and statistical life time consideration by adding detailed description on process, safety factors, methods of generating data points and respective lifetime interpolations as well as being specific on minimum amount of samples required;
c) introduced concept of certification by similarity, including Annex A, giving guidance on qualification considerations and required certification process;
d) alternative pulse shape allowed for surge pulse testing, to avoid issues due to surge tester availability;
e) various improvements throughout the standard: definitions, for example type of coupler have been improved, introduction of surge impulse VIMP rating, usage of glass transition temperature, pre-conditioning have been redefined for improved usability and better compatibility with today’s design and functionality of couplers, available mold compounds, etc.
The contents of the corrigendum of January 2021 have been included in this copy.
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This document specifies performance requirements for electronic controlgear for use on DC or
AC supplies up to 1 000 V (alternating current at 50 Hz or 60 Hz) and with an output
frequency which can deviate from the supply frequency, associated with LED modules
according to IEC 62031. Controlgear for LED modules specified in this document are
designed to provide constant voltage or current. Deviations from the pure voltage and current
types do not exclude the gear from this document.
NOTE 1 The tests in this document are type tests. Requirements for testing individual controlgear during
production are not included.
NOTE 2 Requirements for controlgear which incorporate means for varying the output power are under
consideration.
NOTE 3 It can be expected that controlgear complying with this document will ensure satisfactory operation
between 92 % and 106 % of the rated supply voltage, taking into account the specifications of the LED module
manufacturer.
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The contents of the corrigendum of September 2020 have been included in this copy.
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IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.
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IEC 62384:2020 is available as IEC 62384:2020 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.
IEC 62384:2020 specifies performance requirements for electronic controlgear for use on DC or AC supplies up to 1 000 V (alternating current at 50 Hz or 60 Hz) and with an output frequency which can deviate from the supply frequency, associated with LED modules according to IEC 62031. Controlgear for LED modules specified in this document are designed to provide constant voltage or current. Deviations from the pure voltage and current types do not exclude the gear from this document. This second edition cancels and replaces the first edition published in 2006 and Amendment 1:2009. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition:
- scope extension (direct current from 250 V to 1 000 V);
- new specifications for measuring the power factor for controlgear with settable/non-constant output (for instance, to allow for constant light output);
- deletion of audio frequency requirements;
- selection of current test circuit by module capacitance (instead of selecting by having or not having logic circuitry) plus test circuit setup changes.
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IEC 62047-37:2020 specifies test methods for evaluating the durability of MEMS piezoelectric thin film materials under the environmental stress of temperature and humidity and under mechanical stress and strain, and test conditions for appropriate quality assessment. Specifically, this document specifies test methods and test conditions for measuring the durability of a DUT under temperature and humidity conditions and applied voltages. It further applies to evaluations of direct piezoelectric properties in piezoelectric thin films formed primarily on silicon substrates, i.e. piezoelectric thin films used as acoustic sensors, or as cantilever-type sensors.
This document does not cover reliability assessments, such as methods of predicting the lifetime of a piezoelectric thin film based on a Weibull distribution.
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NEW!IEC 62031:2018 is available as IEC 62031:2018 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 62031:2018 specifies general and safety requirements for light-emitting diode (LED) modules: - non-integrated LED modules (LEDni modules) and semi-integrated LED modules (LEDsi modules) for operation under constant voltage, constant current or constant power; - Integrated LED modules (LEDi modules) for use on DC supplies up to 250 V or AC supplies up to 1 000 V at 50 Hz or 60 Hz. This second edition cancels and replaces the first edition published in 2008, Amendment 1:2012 and Amendment 2:2014. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition: a. the scope was clarified as well as the wording in several other clauses; b. the normative references were updated; c. the definitions for "replaceable LED module", "non-replaceable LED module" and "non-user replaceable LED module" were introduced while other definitions covered by IEC 62504 have been removed; d. the marking clause was restructured and a table added to provide an informative overview; e. the marking requirements for built-in LED modules were changed; f. the entry for the marking with the working voltage was revised; g. the provisions for terminals and heat management were revised; h. Annex B was deleted; i. information for luminaire design with regard to working voltage and water contact was introduced; j. an abnormal temperature test was introduced.
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IEC 60747-5-9:2019(E) specifies the measuring method of the internal quantum efficiency (IQE) of single light emitting diode (LED) chips or packages without phosphor. White LEDs for lighting applications are out of the scope of this document. This document utilizes the relative external quantum efficiencies (EQEs) measured at cryogenic temperatures and at an operating temperature, which is called temperature-dependent electroluminescence (TDEL). In order to identify the reference IQE of 100 %, the maximum values of the peak EQE are found by varying the environmental temperature and current.
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IEC 60747-5-10:2019(E) specifies the measuring method of the internal quantum efficiency (IQE) of single light emitting diode (LED) chips or packages without phosphor. White LEDs for lighting applications are out of the scope of this document. This document utilizes only the relative external quantum efficiency (EQE) measured at an operating room temperature. In order to identify the reference IQE, an operating current corresponding to the injection efficiency of 100 % is found and the radiative efficiency is determined by the infinitesimal change of the relative EQE at that point. The IQE as a function of current is then calculated from the relative ratio of the EQEs to the value at the reference point, which is called room-temperature reference-point method (RTRM).
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IEC 60747-18-3:2019(E) specifies the fluid flow characteristics of lens-free CMOS photonic array sensor package modules with fluidic system for bio analysis. This document includes the measurement set-up, measurement and calculation at initial state flow, criteria of the fluidic system for quality assurance, measurement and calculation at steady-state flow, and test report.
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IEC 60747-5-11:2019(E) specifies the measuring methods of radiative and nonradiative currents of single light emitting diode (LED) chips or packages without phosphor. White LEDs for lighting applications are out of the scope of this document. This document utilizes the internal quantum efficiency (IQE) as a function of current, whose measurement methods are discussed in other documents.
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IEC 60747-19-1:2019(E) specifies the control scheme of a sensor which is a device or a module which achieves a sensing function, data processing function and data output function, by employing a digital processing unit and a means of bidirectional communication between the sensor and an external terminal module
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IEC 62047-35:2019 specifies the test method of electrical characteristics under bending deformation for flexible electromechanical devices. These devices include passive micro components and/or active micro components on the flexible film or embedded in the flexible film. The desired in-plane dimensions of the device for the test method ranges typically from 1 mm to 300 mm and the thickness ranges from 10 mm to 1 mm, but these are not limiting values. The test method is so designed as to bend devices in a quasi-static manner monotonically up to the maximum possible curvature, i.e. until the device is completely folded, so that the entire degradation behaviour of the electric property under bending deformation is obtained. This document is essential to estimate the safety margin under a certain bending deformation and indispensable for reliable design of the product employing these devices.
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IEC 60747-5-8:2019 specifies the terminology and the measuring methods of various efficiencies of single light emitting diode (LED) chips or packages without phosphor. White LEDs for lighting applications are out of the scope of this part of IEC 60747. The efficiencies whose measuring methods are defined in this part are the power efficiency (PE), the external quantum efficiency (EQE), the voltage efficiency (VE), and the light extraction efficiency (LEE). To measure the LEE, the measurement data of the internal quantum efficiency (IQE) is used, whose measuring method is discussed in IEC 60747-5-9 and IEC 60747-5-10. The injection efficiency (IE) and the radiative efficiency (RE) are given definitions only.
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IEC 6074716-6:2019 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit frequency multipliers.
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IEC 62830-6:2019(E) defines terms, definitions, symbols, and specifies configurations and test methods to be used to evaluate and determine the performance characteristics of vertical contact mode triboelectric energy harvesting devices for practical use. This document is applicable to energy harvesting devices as power sources for wearable devices and wireless sensors used in healthcare monitoring, consumer electronics, general industries, military and aerospace applications without any limitations on device technology and size.
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IEC 6074716-6:2019 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit frequency multipliers.
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IEC 60747-18-1:2019 (E) specifies the test methods and data analysis for the calibration of lens-free CMOS photonic array sensors. This document includes the test conditions of each process, configuration of lens-free CMOS photonic array sensors, statistical analysis of test data, calibration for planarization and linearity, and test reports.
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IEC 63150-1:2019 specifies terms and definitions, and test methods for kinetic energy harvesting devices for one-dimensional mechanical vibrations to determine the characteristic parameters under a practical vibration environment. Such vibration energy harvesting devices often have their own non-linear mechanisms to efficiently capture vibration energy in a broadband frequency range. This document is applicable to vibration energy harvesting devices with different power generation principles (such as electromagnetic, piezoelectric, electrostatic, etc.) and with different non-linear behaviour to the external mechanical excitation.
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IEC 62951-6:2019 specifies terms, as well as the test method and report of sheet resistance of the flexible conducting film under bending and folding tests. The measurement methods include the 2-point probe, 4-point probe and Montgomery method, which can be applied to in-situ and ex-situ measurement and the measurements of anisotropic sheet resistance.
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IEC 62951-2:2019 specifies terms, definitions, symbols, configurations and evaluation methods that can be used to evaluate and determine the performance characteristics of flexible thin‑film transistor (TFT) devices. This document specifies test methods and characteristic parameters for accurately evaluating the performance and reliability in practical use of flexible TFT devices under the bending status.
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IEC 62047-33:2019 (E) defines terms, definitions, essential ratings and characteristics, as well as test methods applicable to MEMS piezoresistive pressure-sensitive device. This document applies to piezoresistive pressure-sensitive devices for automotive, medical treatment, electronic products.
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IEC 62047-34:2019 (E) describes test conditions and test methods of electric character, static performances and thermal performances for MEMS pressure-sensitive devices. This document applies to test for both open and closed loop piezoresistive MEMS pressure devices on wafer.
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IEC 62047-36:2019 (E) specifies test methods for evaluating the durability of MEMS piezoelectric thin film materials under the environmental stress of temperature and humidity and under electrical stress, and test conditions for appropriate quality assessment. Specifically, this document specifies test methods and test conditions for measuring the durability of a DUT under temperature and humidity conditions and applied voltages. It further applies to evaluations of converse piezoelectric properties in piezoelectric thin films formed primarily on silicon substrates, i.e., piezoelectric thin films used as actuators. This document does not cover reliability assessments, such as methods of predicting the lifetime of a piezoelectric thin film based on a Weibull distribution.
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IEC 62047-31:2019 (E) specifies a four-point bending test method for measuring interfacial adhesion energy of the weakest interface in the layered micro-electromechanical systems (MEMS) based on the concept of fracture mechanics. In a variety of MEMS devices, there are many layered material interfaces, and their adhesion energies are critical to the reliability of the MEMS devices. The four-point bending test utilizes a pure bending moment applied to a test piece of layered MEMS device, and the interfacial adhesion energy is measured from the critical bending moment for the steady state cracking in the weakest interface. This test method applies to MEMS devices with thin film layers deposited on semiconductor substrates. The total thickness of the thin film layers should be 100 times less than the thickness of a supporting substrate (typically a silicon wafer piece).
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IEC 62951-5:2019 specifies the test method for thermal characteristics of flexible materials. This document includes terms, definitions, symbols, and test methods that can be used to evaluate and determine thermal characteristics of flexible materials for practical use. The measurement method relies on non-contact optical thermometry that is based on temperature dependent optical reflectance. This document is applicable to both substrate and thin-film flexible semiconductor materials that are subjected to bending and stretching.
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IEC 62830-4:2019 describes terms, definitions, symbols, configurations, and test methods that can be used to evaluate and determine the performance characteristics of flexible piezoelectric energy harvesting devices for practical use. This document is applicable to energy harvesting devices for consumers, general industries, wearable electronics, military, and biomedical applications without any limitations of device technology and size.
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IEC 62951-4:2019 specifies an evaluation method of the bending fatigue properties of conductive thin film and flexible substrate for the application at flexible semiconductor devices. The films include any films deposited or bonded onto a non-conductive flexible substrate such as thin metal film, transparent conducting electrode, and thin silicon film used for flexible semiconductor devices. The electrical and mechanical behaviours of films on the substrate are evaluated. The fatigue test methods include dynamic bending fatigue test and static bending fatigue test.
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IEC 62951-7:2019 specifies evaluation conditions and gives a method of measurement as well as a test set-up for the measurement of barrier performance for thin-film layer with ultra‑low permeation rate under both flat and bending conditions. This document also includes the preparation of specimen, electrical contacts, sensor films and calculation procedures. For these purposes, this document provides terms, definitions, symbols, configurations, and test methods including test conditions such as temperature, relative humidity, testing time.
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IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.
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IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.
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IEC 62047-32:2019 specifies the test method and test condition for the nonlinear vibration of MEMS resonators. The statements made in this document apply to the development and manufacture for MEMS resonators.
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IEC 60050-523:2018 gives the general terminology used for micro-electromechanical devices including the process of production of such devices. This terminology is consistent with the terminology developed in the other specialized parts of the IEV.
It has the status of a horizontal standard in accordance with IEC Guide 108.
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