31.080.99 - Other semiconductor devices
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Other semiconductor devices
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IEC 62047-49:2025 specifies reliability test methods of electro-mechanical conversion characteristics of piezoelectric thin film on microcantilever, which is typical structure of micro sensors and micro actuators. In order to estimate the stability of the piezoelectric coefficient of the piezoelectric thin films with microscale structures in the operating conditions, this document reports the schema to determine the characteristic parameters for consumer, industry or any other applications of piezoelectric MEMS devices. This document applies to piezoelectric thin films on microcantilever fabricated by MEMS process.
- Standard8 pagesEnglish languagesale 15% off
IEC 63150-3:2025 specifies terms and definitions, and test methods of impact-driven energy harvesting devices of which electric energy is generated by impact force of human walking or running motion under practical human motion. This document is applicable to impact-driven energy harvesting devices embedded in wearables, especially, shoe-mounted energy harvesters, whose main element of the power generation is the impact energy. This measuring method is independent of power generation principles (such as piezoelectric, electrostatic, triboelectric, electromagnetic, etc.). According to typical human motion, power generation performance is measured in the condition of large-amplitude and low-frequency external mechanical excitation.
- Standard22 pagesEnglish languagesale 15% off
IEC 63150-2:2025 specifies terms and definitions, and test methods that can be used to evaluate and determine the performance characteristics of kinetic energy harvesting devices for human arm swing motion. Such kinetic energy harvesting devices often have a rotor with eccentric mass to efficiently capture kinetic energy at very low frequency range, but this document is not limited to rotational energy harvesters. These have different power generation mechanisms (such as electromagnetic, piezoelectric, electrostatic, triboelectric, etc.) with different working principles, and their performance is evaluated with motions relevant to human arm swing, in which large-amplitude low-frequency external mechanical excitations prevail.
- Standard21 pagesEnglish languagesale 15% off
IEC 62047-53:2025 defines the test methods for the performances of MEMS electrothermal transfer device.
The document is applicable to the MEMS electrothermal transfer devices used in airbags, petroleum and mineral detection, igniters and detonators.
- Standard14 pagesEnglish languagesale 15% off
IEC TR 63571:2025 describes a method to calculate “SYSTEM”-level lifetime from “PART”-level lifetime. It presents a general mathematical theory and simple calculation examples for educational purposes. Of the elements related to “SYSTEM”-level lifetime, software-related elements such as diagnostics are outside the scope of this document.
- Technical report24 pagesEnglish languagesale 15% off
IEC 62047-50:2025 defines the test conditions and test methods for the performance of MEMS capacitive microphones.
This document applies to MEMS capacitive microphones.
- Standard13 pagesEnglish languagesale 15% off
IEC 62047-46:2025 specifies the requirements and testing method to measure the tensile strength of membrane with nanoscale thickness (length from 100 μm to 5 000 μm, width from 100 μm to 1 000 μm, thickness from 50 nm to 500 nm) which is fabricated by micromachining technology used in silicon-based micro-electromechanical system (MEMS).
This document is applicable to in-situ tensile strength measurement of nanoscale thickness membrane manufactured by microelectronics technology and related micromachining technology.
With the devices scaling, the tensile strength degradation, induced by defects and contaminations, becomes severer. This document specifies an in-situ testing method of the tensile strength of membrane with nanoscale thickness based on a MEMS technique. This document does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and special test specimens.
Since in-situ on-chip tester in this document and device are fabricated with the same process on the same wafer, this document can give some practical reference for the design part.
- Standard15 pagesEnglish languagesale 15% off
IEC 62047-45:2025 specifies the requirements and testing method to measure the impact resistance of nanostructures which are fabricated by micromachining technology used in silicon-based micro-electromechanical system (MEMS).
This document is applicable to the in-situ impact resistance measurement of nanostructures manufactured by microelectronic technology process and other micromachining technology.
In the production of MEMS devices, due to the micro/nano size, the non-ideal effect of fabrication is greatly amplified compared with the macroscale. Surface defects, line width loss, and residual stress can occur in the fabricated object, resulting in severe fluctuations in the mechanical strength of MEMS devices. This document specifies an in-situ measurement method for the impact resistance of nanostructures based on MEMS technology to extract the impact strength of actual manufactured structures. This test method does not need intricated instruments (such as scanning probe microscopy and nanoindenter) and special test specimens.
Since the in-situ on-chip tester in this document can be implanted in device fabrication as a standard detection pattern, this document can provide a bridge, by which the fabrication part can give some quantitative reference for the design part.
- Standard15 pagesEnglish languagesale 15% off
IEC 60747-15:2024 gives the requirements for isolated power semiconductor devices. These requirements are additional to those given in other parts of IEC 60747 for the corresponding non-isolated power devices and parts of IEC 60748 for ICs. This third edition includes the following significant technical changes with respect to the previous edition:
a) The intelligent power semiconductor modules (IPM), which was previously excluded from the first and second edition, is now included in this document (Annex C);
b) The thermal resistance is described for each switch (6.2.4);
c) Added isolation test between temperature sensor and terminals, in case there is an agreement with the user (6.1.2).
- Standard61 pagesEnglish languagesale 10% offe-Library read for1 day
IEC 60747-16-9:2024 specifies the terminology, essential ratings, and characteristics, and measuring methods of microwave integrated circuit phase shifters.
- Standard42 pagesEnglish languagesale 10% offe-Library read for1 day
IEC 60747-15:2024 gives the requirements for isolated power semiconductor devices. These requirements are additional to those given in other parts of IEC 60747 for the corresponding non-isolated power devices and parts of IEC 60748 for ICs. This third edition includes the following significant technical changes with respect to the previous edition: a) The intelligent power semiconductor modules (IPM), which was previously excluded from the first and second edition, is now included in this document (Annex C); b) The thermal resistance is described for each switch (6.2.4); c) Added isolation test between temperature sensor and terminals, in case there is an agreement with the user (6.1.2).
- Standard61 pagesEnglish languagesale 10% offe-Library read for1 day
IEC 60747-16-9:2024 specifies the terminology, essential ratings, and characteristics, and measuring methods of microwave integrated circuit phase shifters.
- Standard42 pagesEnglish languagesale 10% offe-Library read for1 day
IEC 60747-15:2024 gives the requirements for isolated power semiconductor devices. These requirements are additional to those given in other parts of IEC 60747 for the corresponding non-isolated power devices and parts of IEC 60748 for ICs. This third edition includes the following significant technical changes with respect to the previous edition:
a) The intelligent power semiconductor modules (IPM), which was previously excluded from the first and second edition, is now included in this document (Annex C);
b) The thermal resistance is described for each switch (6.2.4);
c) Added isolation test between temperature sensor and terminals, in case there is an agreement with the user (6.1.2).
- Standard176 pagesEnglish languagesale 15% off
IEC 60747-16-9:2024 specifies the terminology, essential ratings, and characteristics, and measuring methods of microwave integrated circuit phase shifters.
- Standard79 pagesEnglish and French languagesale 15% off
IEC 62047-47:2024 specifies the requirements and testing method to measure the bending strength of microstructures which are fabricated by micromachining technology used in silicon-based micro-electromechanical system (MEMS).
This document is applicable to the in-situ bending strength measurement of microstructures manufactured by microelectronic technology process and other micromachining technology.
With the devices scaling, the bending strength degradation, induced by defects and contaminations, becomes more severe. This document specifies an in-situ testing method of the bending strength based on MEMS technique. This document does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and special test specimens.
Since in-situ on-chip tester in this document and device are fabricated with the same process on the same wafer, this document can give some practical reference for the design part.
- Standard16 pagesEnglish languagesale 15% off
IEC 62047-48:2024 specifies the requirements and testing method to determine the solution concentration by optical absorption using MEMS fluidic device.
- Standard16 pagesEnglish languagesale 15% off
IEC 63203-402-2:2024 specifies test methods for measuring and evaluating the performance, reliability, and accuracy of the step counting feature in any wearable device that can count steps (e.g. activity and fitness trackers, smart bands, smart shoes, and smart insoles).
These standard test methods exclude the evaluation of data associated with travel distance or calorie consumption.
- Standard21 pagesEnglish languagesale 10% offe-Library read for1 day
IEC 62047-43:2024 specifies the test method of electrical characteristics after cyclic bending deformation for flexible electromechanical devices. These devices include passive micro components and active micro components on the flexible film or embedded in the flexible film. The desired in-plane dimensions of the device for the test method ranges typically from 1 mm to 300 mm and the thickness ranges from 10 μm to 1 mm, but these are not limiting values. The test method is so designed as to understand and further visualize the entire performance deterioration behaviour after cyclic bending deformation in a concept of 3D (P-S-N: Performance - Severity of bending - Number of cycles) plot over the loading space of severity of bending and number of repeated cycles. This document is essential to estimate safety margin over the operation period under a certain level of cyclic bending deformation and indispensable for reliable design of the product employing these devices.
- Standard18 pagesEnglish languagesale 15% off
IEC 63203-402-3:2024 specifies terms, a measurement protocol, and a test to evaluate the accuracy of wearables that measure heart rate with a photoplethysmography (PPG) sensor. While this document can be used to measure a variety of different devices claiming to report heart rate, care will be taken when testing in countries that differentiate between heart rate and pulse rate. This measurement protocol is not intended to evaluate medical devices associated with the IEC 60601 series or ISO 80601 series.
- Standard19 pagesEnglish languagesale 10% offe-Library read for1 day
IEC 62047-44:2024 describes terminology, definitions and test methods that are used to evaluate and determine the dynamic performance of MEMS (Micro-Electromechanical Systems) resonant electric‑field‑sensitive devices. It also specifies sample requirements and test equipment for dynamic performances of MEMS resonant electric‑field‑sensitive devices. The statements made in this document are also applicable to MEMS resonant electric‑field‑sensitive devices with various driving mechanisms such as electrostatic, electrothermal, electromagnetic, piezoelectric, etc.
- Standard19 pagesEnglish languagesale 15% off
IEC 60747-5-16:2023 specifies the measuring method of flat-band voltage of single GaN-based light emitting diode (LED) die or package without phosphor, based on the photocurrent (PC) spectroscopy. White LEDs for lighting applications are out of the scope of this part of IEC 60747.
- Standard17 pagesEnglish languagesale 15% off
IEC 60747-18-4:2023(E) specifies the evaluation method for noise characteristics of lens-free CMOS photonic array sensors. This document includes the measurement setup, test procedure, test items, evaluation method, and test report for noise characteristics of lens-free CMOS photonic array sensors.
- Standard14 pagesEnglish languagesale 15% off
IEC 60747-18-5:2023(E) specifies the evaluation method for light responsivity characteristics of lens-free CMOS photonic array sensor package modules by incident angle of light. This document includes the test setup, test procedure, test item, and test report for lens-free CMOS photonic array sensor package modules.
- Standard12 pagesEnglish languagesale 15% off
This part of IEC 63364-1 provides terms, test method, and report of sound variation detection system based on IoT. It provides the evaluation method for each part of the sound variation detection system based on IoT in the block diagram, the characterization parameters, symbols, test setups and the conditions. In addition, this document defines the configuration items and criteria of standard space and firing situation for the quality evaluation measurement of sound field variation detection system with IoT.
- Standard14 pagesEnglish languagesale 10% offe-Library read for1 day
IEC 62951-8:2023 (E) defines terms and specifies the test method for evaluating the stretchability, flexibility, and stability of flexible resistive memory. The test method descriptions include experimental procedures and the equipment to be used. It also includes general requirements for test conditions such as the temperature and relative humidity of the testing environment. The test method described in this document focuses on stability evaluation rather than reliability.
- Standard14 pagesEnglish languagesale 15% off
This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit limiters.
- Standard39 pagesEnglish languagesale 10% offe-Library read for1 day
This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit attenuators.
- Standard44 pagesEnglish languagesale 10% offe-Library read for1 day
IEC 63203-402-1:2022 specifies test methods for wearable glove-type motion sensors to measure finger movements. The measurement methods include goniometric parameters related to the finger postures and flexion dynamics. Glove-type motion sensors are the type of gloves considered within the scope of this document for testing and measurement. This document describes direct and indirect measurement methods. In the direct measurement method, the angles of the joints of each finger are directly measured by a goniometer. The indirect method uses a measurement device such as a servomotor-based angle-measuring device. This document is applicable to angle measurement of all gloves with glove-type motion sensors without limitation of the device technology or size.
- Standard18 pagesEnglish languagesale 10% offe-Library read for1 day
This part of IEC 63203-801 specifies low complexity Medium Access Control (MAC) for SmartBAN.
As the use of wearables and connected body sensor devices grows rapidly in the Internet of Things (IoT), Wireless Body Area Networks (BAN) facilitate the sharing of data in smart environments such as smart homes, smart life etc. In specific areas of digital healthcare, wireless connectivity between the edge computing device or hub coordinator and the sensing nodes requires a standardized communication interface and protocols.
The present document describes the MAC specifications:
- Channel Structure,
- MAC Frame Formats,
- MAC functions.
- Standard41 pagesEnglish languagesale 10% offe-Library read for1 day
This part of IEC 63203-801 specifies the ultra-low power physical layer (PHY) Smart BAN.
As the use of wearables and connected body sensor devices grows rapidly in the Internet of Things (IoT), Wireless Body Area Networks (BAN) facilitate the sharing of data in smart environments such as smart homes, smart life etc. In specific areas of digital healthcare, wireless connectivity between the edge computing device or hub coordinator and the sensing nodes requires a standardized communication interface and protocols.
The present document describes the Physical Layer (PHY) specifications:
- packet formats;
- modulation;
- forward error correction
- Standard16 pagesEnglish languagesale 10% offe-Library read for1 day
NEW!IEC 62031:2018 is available as IEC 62031:2018 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 62031:2018 specifies general and safety requirements for light-emitting diode (LED) modules: - non-integrated LED modules (LEDni modules) and semi-integrated LED modules (LEDsi modules) for operation under constant voltage, constant current or constant power; - Integrated LED modules (LEDi modules) for use on DC supplies up to 250 V or AC supplies up to 1 000 V at 50 Hz or 60 Hz. This second edition cancels and replaces the first edition published in 2008, Amendment 1:2012 and Amendment 2:2014. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition: a. the scope was clarified as well as the wording in several other clauses; b. the normative references were updated; c. the definitions for "replaceable LED module", "non-replaceable LED module" and "non-user replaceable LED module" were introduced while other definitions covered by IEC 62504 have been removed; d. the marking clause was restructured and a table added to provide an informative overview; e. the marking requirements for built-in LED modules were changed; f. the entry for the marking with the working voltage was revised; g. the provisions for terminals and heat management were revised; h. Annex B was deleted; i. information for luminaire design with regard to working voltage and water contact was introduced; j. an abnormal temperature test was introduced.
- Standard26 pagesEnglish languagesale 10% offe-Library read for1 day
IEC 62951-9:2022(E) specifies the test methods for evaluating the performance of unipolar-type one transistor one resistor (1T1R) resistive memory cells. The performance test methods in this document include read, forming, SET, RESET, endurance and retention. This document is applicable to flexible devices as well as rigid resistive memory devices without any limitations prone to device technology and size.
- Standard18 pagesEnglish languagesale 15% off
IEC 63364-1:2022 specifies terms, the test method, and the report of sound variation detection system based on IoT. It provides the evaluation method for each part of the sound variation detection system based on IoT in the block diagram, the characterization parameters, symbols, test setups and the conditions. In addition, this document defines the configuration items and criteria of standard space and firing situation for the quality evaluation measurement of sound field variation detection system with IoT.
- Standard24 pagesEnglish and French languagesale 15% off
IEC 60747-16-8:2022 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit limiters.
- Standard73 pagesEnglish and French languagesale 15% off
IEC 60747-16-7:2022 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit attenuators.
- Standard83 pagesEnglish and French languagesale 15% off
IEC TR 63357:2022(E) describes standardization roadmap of fault test methods for integrated circuits used in automotive vehicles. Since automotive vehicles are exposed in harsh environment such as very low or high temperature, vibration, high frequency signals, etc. Therefore, they are tested for possible faults which can be caused by harsh environment. There are several fault test methods and related issues to be standardized.
Semiconductor devices used in automotive vehicles are exposed in harsh environment of very high or very low temperature, vibration, high frequency signals, etc. Therefore, they are tested for possible faults which can be caused by harsh environment Evaluation results following this fault test methods will provide robustness of the semiconductor device.
- Technical report14 pagesEnglish languagesale 15% off
IEC 62047-42:2022 specifies measuring methods of electro-mechanical conversion characteristics of piezoelectric thin film on microcantilever, which is typical structure of actual micro sensors and micro actuators. In order to obtain actual and precise piezoelectric coefficient of the piezoelectric thin films with microdevice structures, and this document reports the schema to determine the characteristic parameters for consumer, industry or any other applications of piezoelectric devices. This document applies to piezoelectric thin films on microcantilever fabricated by MEMS process.
- Standard22 pagesEnglish languagesale 15% off
IEC 6074716-6:2019 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit frequency multipliers.
- Standard28 pagesEnglish languagesale 10% offe-Library read for1 day
IEC 63068-4:2022(E) provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical inspection and PL images to enable the detection and categorization of defects in SiC homoepitaxial wafers.
- Standard25 pagesEnglish languagesale 15% off
In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. This publication describes the guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following:
a) GaN enhancement and depletion-mode discrete power devices [1]
b) GaN integrated power solutions
c) the above in wafer and package levels
Wafer level tests are recommended to minimize parasitic effects when performing high precision measurements. For package level tests, the impact of package thermal characteristics should be considered so as to minimize any device under test (DUT) self-heating implications.
The prescribed test methods may be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.
- Standard16 pagesEnglish languagesale 10% offe-Library read for1 day
In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. This publication describes the guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following: a) GaN enhancement and depletion-mode discrete power devices [1] b) GaN integrated power solutions c) the above in wafer and package levels Wafer level tests are recommended to minimize parasitic effects when performing high precision measurements. For package level tests, the impact of package thermal characteristics should be considered so as to minimize any device under test (DUT) self-heating implications. The prescribed test methods may be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.
- Standard16 pagesEnglish languagesale 10% offe-Library read for1 day
IEC 60747-5-14:2022(E) specifies the measuring method of the surface temperature of single LED die or package, based on the thermoreflectance (TR) method. TR is the effect that the reflectance of light changes with the temperature of a substance. This part measures relative change in the reflectance of light from a metal film deposited nearby on the metallurgical pn junction as the relative change in the LED junction temperature. The surface temperature can be approximated as the junction temperature when the thermal resistance effect between the metal surface and the pn junction is negligibly small.
- Standard21 pagesEnglish languagesale 15% off
IEC 63373:2022 In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. IEC 63373:2022 provides guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following:
a) GaN enhancement and depletion-mode discrete power devices;
b) GaN integrated power solutions;
c) the above in wafer and package levels.
The prescribed test methods can be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.
- Standard28 pagesEnglish and French languagesale 15% off
IEC 60747-5-15:2022(E) specifies the measuring methods of flat-band voltage of single GaN‑based light emitting diode (LED) die or package without phosphor, based on the electroreflectance (ER) spectroscopy. White LEDs for lighting applications are out of the scope of this part of IEC 60747-5.
- Standard14 pagesEnglish languagesale 15% off
2021-05-26: This A11 includes the updated Annexes ZA & ZZ, it will allow citation of EN IEC 62031:2020, published without the link to LVD directive
- Amendment4 pagesEnglish languagesale 10% offe-Library read for1 day
2021-05-26: This A11 includes the updated Annexes ZA & ZZ, it will allow citation of EN IEC 62031:2020, published without the link to LVD directive
- Amendment4 pagesEnglish languagesale 10% offe-Library read for1 day
IEC 62830-8:2021(E) specifies terms, definitions, symbols, test, and evaluation methods used to determine the performance characteristics of flexible and stretchable supercapacitor for practical use in low power electronics such as energy storage devices for energy harvesting, flexible and stretchable electronics, low-power devices, IoT applications, etc. This document is applicable to all the flexible and stretchable supercapacitor for consumers and manufacturers, without any limitations of device technology and size.
- Standard36 pagesEnglish languagesale 15% off
IEC 63244-1:2021 provides general requirements and specifications of the semiconductor devices for the performance and reliability evaluations of wireless power transfer and charging systems. For the performance evaluations, this part covers various characterization parameters and symbols, general system diagrams, and test setups and test conditions. This document also describes classifications of the wireless power transfer technologies.
- Standard37 pagesEnglish languagesale 10% offe-Library read for1 day
IEC TR 60747-5-12:2021(E) discusses the terminology and the measuring methods of optoelectronic efficiencies of single light emitting diode (LED) chip or package without phosphor. White LEDs for lighting applications are out of the scope of this part.
This technical report provides guidance on
- terminology of optoelectronic efficiencies of single LED chip or package without phosphor, such as the power efficiency (PE), the external quantum efficiency (EQE), the voltage efficiency (VE), the light extraction efficiency (LEE), the internal quantum efficiency (IQE), the injection efficiency (IE), and the radiative efficiency (RE);
- test methods of optoelectronic efficiencies of the PE, the EQE, the VE, the LEE, and the IQE;
- review of various IQE measurement methods reported so far in view of accuracy and practical applicability;
- the measuring method of the LED IQE based on the temperature-dependent electroluminescence (TDEL);
- the measuring method of the LED IQE based on the room-temperature reference-point method (RTRM);
- the measuring method of the radiative and nonradiative currents of an LED;
- the relationship between the IQE and the VE, which leads to introduction of a new LED efficiency, the active efficiency (AE) as AE = VE × IQE.
- Technical report88 pagesEnglish languagesale 15% off
IEC 63244-1:2021 provides general requirements and specifications of the semiconductor devices for the performance and reliability evaluations of wireless power transfer and charging systems. For the performance evaluations, this part covers various characterization parameters and symbols, general system diagrams, and test setups and test conditions.
This document also describes classifications of the wireless power transfer technologies.
- Standard65 pagesEnglish and French languagesale 15% off