ASTM E1162-87(1996)

Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)

SCOPE
1.1 This practice covers the information needed to describe and report instrumentation, specimen parameters, experimental conditions, and data reduction procedures. SIMS sputter depth profiles can be obtained using a wide variety of primary beam excitation conditions, mass analysis, data acquisition, and processing techniques (1-4).
1.2 Limitations—This practice is limited to conventional sputter depth profiles in which information is averaged over the analyzed area in the plane of the specimen. Ion microprobe or microscope techniques permitting lateral spatial resolution of secondary ions within the analyzed area, for example, image depth profiling, are excluded.
1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Historical
• Publication Date: 23-Apr-1987
• Technical Committee: E42 - Surface Analysis
• Drafting Committee: E42.06 - SIMS

Relations

• Replaced By: ASTM E1162-87(2001) - Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)
• Effective Date: 24-Apr-1987

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
Designation: E 1162 – 87 (Reapproved 1996)
Standard Practice for
Reporting Sputter Depth Profile Data in Secondary Ion Mass
Spectrometry (SIMS)
This standard is issued under the fixed designation E 1162; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope “Experimental” sections of other publications (subject to
editorial restrictions).
1.1 This practice covers the information needed to describe
5.2 The report would include specific conditions for each
and report instrumentation, specimen parameters, experimental
data set, particularly, if any parameters are changed for
conditions, and data reduction procedures. SIMS sputter depth
different sputter depth profile data sets in a publication. For
profiles can be obtained using a wide variety of primary beam
example, footnotes of tables or figure captions would be used
excitation conditions, mass analysis, data acquisition, and
to specify differing conditions.
processing techniques (1-4).
1.2 Limitations—This practice is limited to conventional
6. Information to Be Reported
sputter depth profiles in which information is averaged over the
6.1 Instrumentation:
analyzed area in the plane of the specimen. Ion microprobe or
6.1.1 If a standard commercial SIMS system is used, specify
microscope techniques permitting lateral spatial resolution of
the manufacturer and instrument model number. Specify, the
secondary ions within the analyzed area, for example, image
model numbers and manufacturer of any accessory or auxiliary
depth profiling, are excluded.
equipment relevant to the depth profiling study (for example,
1.3 This standard does not purport to address all of the
special specimen stage, primary mass filter, electron flood gun,
safety concerns, if any, associated with its use. It is the
vacuum pumps, data acquisition system, and source of soft-
responsibility of the user of this standard to establish appro-
ware, etc.).
priate safety and health practices and determine the applica-
6.1.2 If a nonstandard commercial SIMS system is used,
bility of regulatory limitations prior to use.
specify the manufacturer and model numbers of components
2. Referenced Documents (for example, primary ion source, mass analyzer, data system,
and accessory equipment).
2.1 ASTM Standards:
6.2 Specimen:
E 673 Terminology Relating to Surface Analysis
6.2.1 Describe the specimen as completely as possible. For
3. Terminology
example, specify its bulk composition, preanalysis history,
physical dimensions. If the specimen contains dopants, for
3.1 For definitions of terms used in this practice, see
example, semiconductors, report the dopant type and concen-
Terminology E 673.
tration. For multicomponent specimens, state the degree of
4. Summary of Practice
specimen homogeneity.
6.2.2 State the method of mounting and positioning the
4.1 Experimental conditions and variables that affect SIMS
specimen for analysis. Specify any physical treatment of the
sputter depth profiles (1-4) and tabulated raw data (where
specimen mounted in the SIMS analysis chamber (for example,
feasible) are reported to facilitate comparisons to other labo-
heated, cooled, electron bombarded, etc.). Note the specimen
ratories or specimens, and to results of other analytical tech-
potential relative to ground. Describe the method of specimen
niques.
charge compensation used (if any), for example, conductive
5. Significance and Use
coatings or grid, electron flooding, etc.
6.3 Experimental Conditions:
5.1 This practice is used for reporting the experimental
6.3.1 Primary Ion Source—Give the following parameters
conditions as specified in Section 6 in the “Methods” or
whenever possible: Composition (if mass filtered, give the
16 −
specific ion and isotope, for example, O ); angle of incidence
This practice is under the jurisdiction of ASTM Committee E-42 on Surface
(relative to the surface normal); ion beam energy; current
Analysis and is the direct reponsibility of Subcommittee E42.06 on SIMS.
(including the method used for measurement, for example,
Current edition approved April 24, 1987. Published June 1987.
The boldface numbers in parentheses refer to the references at the end of this
Faraday cup); beam diameter (including the method used for
standard.
measurement); size and shape of sputtered area; primary beam
Annual Book of ASTM Standards, Vol 03.06.
Copyright © ASTM, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959, United States.
E 1162
current density for a stationary beam (A/m ); beam raster size 6.4.1 Concentrations—If any elemental concentrations are
and rate (if used); primary ion dose rate averaged over the presented, state clearly the methodology used for quantification
sputtered area (ions/m ·s).
(5 and 6). In addition, specify the nature of any external or
6.3.2 Secondary Ion Mass Spectrometer—Give the follow- internal standards used including methods for normalization in
ing parameters whenever possible: analyzed area versus total
comparing ion intensities in standards to ion intensities in
sputtered area (for example, image filed/selected area aperture specimen depth profiles. Specify standards made by ion im-
size for stigmatic ion microscopes; raster/electronic signal
plantation according to ion species, dose, energy, matrix, and
gating for ion microprobes, etc.); collection angle (angle reference data used to calculate peak concentration of the
be
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