ASTM F951-01

Standard Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers

SCOPE
1.1 This test method covers test site selection and data reduction procedures for radial variation of the interstitial oxygen concentration in silicon slices typically used in the manufacture of microelectronic semiconductor devices.
1.2 This test method is intended as both a referee and production test through selection of an appropriate test position plan.
1.3 The interstitial oxygen content may be measured in accordance with Test Methods F 1188 or F 1619, DIN 50438/1, JEIDA 61, or any other procedure agreed upon by the parties to the test.
Note 1—Test Method F 1366 is not based on infrared absorption measurement and it measures total oxygen content, not interstitial oxygen content. It is also a destructive technique. However, it can be used to determine the radial variation of the oxygen content if suitable modifications of the test procedure are made.
1.4 Acceptable thickness and surface finish for the test specimens are specified in the applicable test methods. This test method is suitable for use on chemically etched, single-side polished and double-side polished silicon wafers or slices with no surface defects that could adversely change infrared radiation transmission through the test specimen (subsequently called slice), provided that appropriate test methods for oxygen content are selected.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Historical
• Publication Date: 09-Jan-2002
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics

Relations

• Replaces: ASTM F951-96 - Standard Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers
• Effective Date: 10-Jan-2002
• Replaced By: ASTM F951-02 - Standard Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers (Withdrawn 2003)
• Effective Date: 10-Jan-2002

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
Designation: F 951 – 01
Standard Test Method for
Determination of Radial Interstitial Oxygen Variation in
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Silicon Wafers
This standard is issued under the fixed designation F 951; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope troscopy with p-Polarized Radiation Incident at the Brew-
2
ster Angle
1.1 This test method covers test sight selection and data
2.2 DIN Standard:
reduction procedures for radial variation of the interstitial
DIN 50438/1 Test of Materials for Semiconductor Technol-
oxygen concentration in silicon slices typically used in the
ogy; Determination of Impurity Content in Silicon by
manufacture of microelectronic semiconductor devices.
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Infrared Absorption; Oxygen
1.2 This test method is intended as both a referee and
2.3 JEITA Standard:
production test through selection of an appropriate test position
JEITA 61 Standard Test Method for Interstitial Atomic
plan.
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Oxygen Content of Silicon by Infrared Absorption
1.3 The interstitial oxygen content may be measured in
2.4 ANSI Standard:
accordance with Test Methods F 1188, F 1366 or F 1619, DIN
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ANSI/ASQC 21.4
50438/1, JEITA 61, or any other procedure agreed upon by the
parties to the test.
3. Summary of Test Method
1.4 Acceptable sample surface finishes are specified in the
3.1 Instruments are selected and qualified according to the
applicable test methods. This test method is suitable for use on
test procedure chosen.
chemically etched, single-side polished and double-side pol-
3.2 Measurements are made at the specified test locations
ished silicon slices with no surface defects that could adversely
and a relative oxygen variation is calculated by one of four
change infrared radiation transmission through the slice, pro-
available plans.
vided that appropriate test methods for oxygen content are
selected.
4. Significance and Use
1.5 This standard does not purport to address all of the
4.1 The presence of oxygen can be beneficial to certain
safety concerns, if any, associated with its use. It is the
manufacturing operations by preventing the formation of
responsibility of the user of this standard to establish appro-
process-induced defects. To the extent that this is true, it
priate safety and health practices and determine the applica-
becomes important that the oxygen be uniformly distributed
bility of regulatory limitations prior to use.
over the entire slice.
2. Referenced Documents 4.2 Multiple test plans are included to satisfy a variety of
requirements. The characteristic shape and magnitude of oxy-
2.1 ASTM Standards:
gen concentration distributions in crystals are functions of the
F 533 Test Method for Thickness and Thickness Variation
2 crystal growth process. Although the specified test plans are
of Silicon Wafers
intended to cover oxygen concentration distributions which are
F 1188 Test Method for Interstitial Atomic Oxygen Content
2 typically found, other distributions may occur. In such cases, it
of Silicon by Infrared Absorption
may be necessary to use test positions other than those
F 1366 Test Method for Measuring Oxygen Concentration
specified in order to adequately describe the distribution
in Heavily Doped Silicon Substrates by Secondary Ion
2 pattern.
Mass Spectrometry
4.3 This test method may be used for process control,
F 1619 Test Method for Measurement of Interstitial Oxygen
Content of Silicon Wafers by Infrared Absorption Spec-
3
DIN 50438/1 is the responsibility of DIN Committee NMP 221, with which
ASTM F-1 maintains close liason. DIN 50438/1 is available from Beuth Verlag
GmbH, Burggrafenstrasse 4-10, D-1000, Berlin 30, Germany.
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This test method is under the jurisdiction of ASTM Committee F01 on JEITA 61 is the responsibility of the JEITA Silicon Wafer Committee, with
Electronics and is the direct responsibility of Subcommittee F01.06 on Silicon which ASTM F01 maintains close liason. JEITA 61 is available from the Japan
Materials and Process Control. Electronics and Information Technology Industries Association, Kikai-Shinko-
Current edition approved Oct. 10, 2001. Published December 2001. Originally Kaikan, 3-5-8 Shiba koen, Minato-ku, Tokyo 105-0011, Japan.
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published as F 951 – 85. Last previous edition F 951 – 96. Available from American Society for Quality Control (ASQC), P.O. Box 3005
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Annual Book of ASTM Standards, Vol 10.05. Milwaukee, WI 53201-9404.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
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