ASTM F1709-97(2002)

Standard Specification for High Purity Titanium Sputtering Targets for Electronic Thin Film Applications

SCOPE
1.1 This specification covers pure titanium sputtering targets used as a raw material in fabricating semiconductor electronic devices.
1.2 This standard sets purity grade levels, physical attributes, analytical methods, and packaging.
1.2.1 The grade designation is a measure of total metallic impurity content. The grade designation does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance.

General Information

• Status: Historical
• Publication Date: 09-Dec-2002
• ICS: 31.120 - Electronic display devices
• Technical Committee: F01 - Electronics
• Drafting Committee: F01.17 - Sputter Metallization

Relations

• Replaces: ASTM F1709-97 - Standard Specification for High Purity Titanium Sputtering Targets for Electronic Thin Film Applications
• Effective Date: 10-Dec-2002
• Replaced By: ASTM F1709-97(2008) - Standard Specification for High Purity Titanium Sputtering Targets for Electronic Thin Film Applications
• Effective Date: 15-Jun-2008
• Referred By: ASTM F3166-16 - Standard Specification for High-Purity Titanium Sputtering Target Used for Through-Silicon Vias (TSV) Metallization (Withdrawn 2023)
• Effective Date: 10-Dec-2002

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation: F 1709 – 97 (Reapproved 2002)
Standard Specification for
High Purity Titanium Sputtering Targets for Electronic Thin
Film Applications
This standard is issued under the fixed designation F 1709; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
TABLE 1 Titanium Sputtering Target Grades
1. Scope
Grade Purity, % Maximum Total Metallic Impurity
1.1 This specification covers pure titanium sputtering tar-
Content, wt ppm
gets used as a raw material in fabricating semiconductor
4N 99.99 100
electronic devices.
4N5 99.995 50
1.2 This standard sets purity grade levels, physical at-
5N 99.999 10
tributes, analytical methods, and packaging.
1.2.1 The grade designation is a measure of total metallic
5. Ordering Information
impurity content. The grade designation does not necessarily
indicate suitability for a particular application because factors
5.1 Orders for pure titanium sputtering targets shall include
other than total metallic impurity may influence performance.
the following:
5.1.1 Grade (see 4.1),
2. Referenced Documents
5.1.2 Special requirements concerning impurities, if re-
2.1 ASTM Standards:
quired (see 6.1, 6.2, 6.3, 6.4),
E 112 Test Methods for Determining Average Grain Size
5.1.3 Grain size, if required (Section 7),
5.1.4 Configuration (Section 8),
3. Terminology
5.1.5 Certification required (Section 12), and
3.1 Definitions of Terms Specific to This Standard:
5.1.6 Whether or not a sample representative of the finished
3.1.1 finished product, n—for the purposes of this standard,
product is required to be provided by the supplier to the
a “finished product” is a manufactured sputtering target, ready
purchaser.
for use.
6. Impurities
3.1.2 material lot, n—for the purpose of this standard,a
“lot” is material melted into one ingot, and processed as one
6.1 The minimum suite of metallic impurity elements to be
continuous batch in subsequent thermal-mechanical treat-
analyzed is defined in Table 2. Acceptable analysis methods
ments.
and detection limits are specified in Section 11. Elements not
detected will be counted and reported as present at the
4. Classification
minimum detection limit (“mdl”).Additional elements may be
4.1 Grades of titanium sputtering targets are defined in
analyzed and reported as agreed upon between the purchaser
Table 1, based upon total metallic impurity content of the
and the supplier, but these shall not be counted in defining the
elements listed in Table 2. Impurity contents are reported in
grade designation.
parts per million by weight (wt ppm). Higher purity grades, for
6.2 Cesium, chlorine, phosphorus, and tantalum present
example “5N5” and“ 6N”, may be provided, as agreed upon
particular analysis problems. The limits, analysis method, and
between the purchaser and the supplier.
mdl may be as agreed upon between the purchaser and the
4.2 Purity grade and total metallic impurity levels are based
supplier.
upon the suite of elements listed in Table 2.
TABLE 2 Suite of Metallic Elements to be Analyzed and Reported
aluminum iron silicon vanadium
This specification is under the jurisdiction of ASTM Committee F01 on
chromium lead silver zinc
Electronics and is the direct responsibility of Subcommittee F01.17 on Sputter
cobalt lithium potassium sodium
Metallization.
zirconium copper magnesium thorium
Current edition approved Dec. 10, 2002. Published May 2003. Originally
boron manganese tin molybdenum
approved in 1996. Last previous edition approved in 1997 as F 1709 – 97.
tungsten nickel uranium
Annual Book of ASTM Standards, Vol 03.01.
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F 1709 – 97 (2002)
6.3 Nonmetallic elements which shall be analyzed and gradedesignation(4.1),othermetallicimpuritylimits(6.1,6.2,
reported are carbon, hydrogen, nitrogen, oxygen, and sulfur. 6.4), and the agreed upon limits for nonmetallic content (6.3).
Maximum limits for nonmetallic impurities shall be as agreed
11. Analytical Methods
upon between the purchaser and the supplier.
11.1 Analysis for impurities listed in Section 6 and Table 2
6.4 Acceptable limits and analytical techniques for particu-
shall be performed as follows:
lar elements in critical applications may be agreed upon
11.1.1 Trace Metallic Impurities—By glow discharge mass
between the purchaser and the supplier.
spectrometer(GDMS)withanominalmdl#0.05weightppm.
7. Grain Size NOTE 1—The mdl for some metallic species by GDMS is >0.05 weight
ppm, as limited by interferences.
7.1 The average and the maximum grain size shall be as
11.1.2 Carbon, Oxygen, Sulfur—By fusion and gas
agreed upon between the purchaser and the supplier.
extraction/infrared spectroscopy with an mdl of#10 weight
7.2 Average grain size shall be measured and reported in
ppm.
accordance with Test Methods E 112, or other equivalent
11.1.3 Nitrogen—By fusion and gas extraction with an m
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