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ASTM E1127-08

(Guide)

Standard Guide for Depth Profiling in Auger Electron Spectroscopy

Standard Guide for Depth Profiling in Auger Electron Spectroscopy

SIGNIFICANCE AND USE
Auger electron spectroscopy yields information concerning the chemical and physical state of a solid surface in the near surface region. Nondestructive depth profiling is limited to this near surface region. Techniques for measuring the crater depths and film thicknesses are given in (1).  
Ion sputtering is primarily used for depths of less than the order of 1 μm.
Angle lapping or mechanical cratering is primarily used for depths greater than the order of 1 μm.
The choice of depth profiling methods for investigating an interface depends on surface roughness, interface roughness, and film thickness (2).
The depth profile interface widths can be measured using a logistic function which is described in Practice E 1636.
SCOPE
1.1 This guide covers procedures used for depth profiling in Auger electron spectroscopy.
1.2 Guidelines are given for depth profiling by the following:
Section Ion Sputtering 6 Angle Lapping and Cross-Sectioning 7 Mechanical Cratering 8 Mesh Replica Method9 Nondestructive Depth Profiling 10
1.3 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.4 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

Status
Historical
Publication Date
30-Sep-2008
ICS
71.040.50 - Physicochemical methods of analysis
Technical Committee
E42 - Surface Analysis
Drafting Committee
E42.03 - Auger Electron Spectroscopy and X-Ray Photoelectron Spectroscopy
Current Stage
Ref Project

Relations

Replaces
ASTM E1127-03 - Standard Guide for Depth Profiling in Auger Electron Spectroscopy
Effective Date
01-Oct-2008
Replaced By
ASTM E1127-08(2015) - Standard Guide for Depth Profiling in Auger Electron Spectroscopy
Effective Date
01-Jun-2015
Referred By
ASTM E2735-14(2020) - Standard Guide for Selection of Calibrations Needed for X-ray Photoelectron Spectroscopy (XPS) Experiments
Effective Date
01-Oct-2008
Referred By
ASTM E1078-14(2020) - Standard Guide for Specimen Preparation and Mounting in Surface Analysis
Effective Date
01-Oct-2008
Referred By
ASTM E996-19 - Standard Practice for Reporting Data in Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy
Effective Date
01-Oct-2008

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REDLINE ASTM E1127-08 - Standard Guide for Depth Profiling in Auger Electron SpectroscopyREDLINE ASTM E1127-08 - Standard Guide for Depth Profiling in Auger Electron Spectroscopy
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Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation:E1127 −08
StandardGuide for
1
Depth Profiling in Auger Electron Spectroscopy
This standard is issued under the fixed designation E1127; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope E1577GuideforReportingofIonBeamParametersUsedin
Surface Analysis
1.1 Thisguidecoversproceduresusedfordepthprofilingin
E1634Guide for Performing Sputter Crater Depth Measure-
Auger electron spectroscopy.
ments
1.2 Guidelines are given for depth profiling by the follow-
E1636Practice for Analytically Describing Depth-Profile
ing:
and Linescan-Profile Data by an Extended Logistic Func-
Section
tion
Ion Sputtering 6
E1829Guide for Handling Specimens Prior to Surface
Angle Lapping and Cross-Sectioning 7
Analysis
Mechanical Cratering 8
Mesh Replica Method 9
4
2.2 ISO Standards:
Nondestructive Depth Profiling 10
ISO/TR 22335: 2007 Surface Chemical Analysis—Depth
1.3 The values stated in SI units are to be regarded as
Profiling—Measurement of Sputtering Rate: Mesh-
standard. No other units of measurement are included in this
Replica Method Using a Mechanical Stylus Profilometer
standard.
1.4 This standard does not purport to address all of the
3. Terminology
safety problems, if any, associated with its use. It is the
3.1 Definitions:
responsibility of the user of this standard to establish appro-
3.1.1 For definitions of terms used in this guide, refer to
priate safety and health practices and determine the applica-
Terminology E673.
bility of regulatory limitations prior to use.
2. Referenced Documents
4. Summary of Guide
2
2.1 ASTM Standards:
4.1 In ion sputtering, the surface layers are removed by ion
E673TerminologyRelatingtoSurfaceAnalysis(Withdrawn
bombardment in conjunction with Auger analysis.
3
2012)
4.2 In angle lapping, the surface is lapped or polished at a
E684Practice for Approximate Determination of Current
small angle to improve the depth resolution as compared to a
Density of Large-Diameter Ion Beams for Sputter Depth
cross section.
Profiling of Solid Surfaces
E827Practice for Identifying Elements by the Peaks in
4.3 In mechanical cratering, a spherical or cylindrical crater
Auger Electron Spectroscopy
is created in the surface using a rotating ball or wheel. The
E996Practice for Reporting Data in Auger Electron Spec-
sloping sides of the crater are used to improve the depth
troscopy and X-ray Photoelectron Spectroscopy
resolution as in angle lapping.
E1078Guide for Specimen Preparation and Mounting in
4.4 Innondestructivetechniques,differentmethodsofvary-
Surface Analysis
ing the electron information depth are involved.
1
This guide is under the jurisdiction of ASTM Committee E42 on Surface
5. Significance and Use
Analysisand is the direct responsibility of Subcommittee E42.03 on Auger Electron
Spectroscopy and X-Ray Photoelectron Spectroscopy.
5.1 Auger electron spectroscopy yields information con-
Current edition approved Oct. 1, 2008. Published November 2008. Originally
cerningthechemicalandphysicalstateofasolidsurfaceinthe
approved in 1986. Last previous edition approved in 2003 as E1127–03. DOI:
near surface region. Nondestructive depth profiling is limited
10.1520/E1127-08.
2
For referenced ASTM standards, visit the ASTM website, www.astm.org, or
contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM
Standards volume information, refer to the standard’s Document Summary page on
4
the ASTM website. Available from International Organization for Standardization (ISO), 1, ch. de
3
The last approved version of this historical standard is referenced on la Voie-Creuse, Case postale 56, CH-1211, Geneva 20, Switzerland, http://
www.astm.org. www.iso.ch.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
1

---------------------- Page: 1 ----------------------
E1127−08
tothisnearsurfaceregion.Techniquesformeasuringthecrater reactive phases, thenAuger peaks due to adsorbed species, for
5
depths and film thicknesses are given in (1). example, oxygen or carbon, or both, will appear in the spectra
and mask the actual depth distribution.
5.2 Ion sputtering is primarily used for depths of less than
6.2.2 It is advisable when analyzing an unknown specimen
the order of 1 µm.
to periodically examine survey scans to detect any new
5.3 Angle lapping or mechanical cratering is primarily used
elements that were not present in the initial survey scan and to
for depths greater than the order of 1 µm.
determine if any of the Auger peaks have been displaced
5.4 The choice of depth profiling methods for investigating outside of their analys
...

This document is not anASTM standard and is intended only to provide the user of anASTM standard an indication of what changes have been made to the previous version. Because
it may not be technically possible to adequately depict all changes accurately, ASTM recommends that users consult prior editions as appropriate. In all cases only the current version
of the standard as published by ASTM is to be considered the official document.
Designation:E1127–03 Designation: E 1127 – 08
Standard Guide for
1
Depth Profiling in Auger Electron Spectroscopy
This standard is issued under the fixed designation E 1127; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope
1.1 This guide covers procedures used for depth profiling in Auger electron spectroscopy.
1.2 Guidelines are given for depth profiling by the following:
Section
Ion Sputtering 6
Angle Lapping and Cross-Sectioning 7
Mechanical Cratering 8
Nondestructive Depth Profiling Mesh Rep-
lica Method
Nondestructive Depth Profiling 10
1.3
1.3 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.4 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility
of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory
limitations prior to use.
2. Referenced Documents
2
2.1 ASTM Standards:
E 673 Terminology Relating to Surface Analysis
E 684 Practice forApproximate Determination of Current Density of Large-Diameter Ion Beams for Sputter Depth Profiling of
Solid Surfaces
2
E 827Practice for Elemental Identification byAuger Electron Spectroscopy Practice for Identifying Elements by the Peaks in
Auger Electron Spectroscopy
E 996 Practice for Reporting Data in Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy
E 1078 Guide for Specimen Preparation and Mounting in Surface Analysis
E 1577 Guide for Reporting of Ion Beam Parameters Used in Surface Analysis
2
E 1634Guide for Performing Sputter Crater Depth Measurements Guide for Performing Sputter Crater Depth Measurements
E 1636 Practice for Analytically Describing Sputter-Depth-Profile Interface Data by an Extended Logistic Function
E 1829 Guide for Handling Specimens Prior to Surface Analysis
3
2.2 ISO Standards:
ISO/TR 22335: 2007 Surface Chemical Analysis—Depth Profiling—Measurement of Sputtering Rate: Mesh-Replica Method
Using a Mechanical Stylus Profilometer
3. Terminology
3.1 Definitions:
3.1.1 For definitions of terms used in this guide, refer to Terminology E 673.
4. Summary of Guide
4.1 In ion sputtering, the surface layers are removed by ion bombardment in conjunction with Auger analysis.
1
This guide is under the jurisdiction of ASTM Committee E42 on Surface Analysis and is the direct responsibility of Subcommittee E42.03 on Auger Electron
Spectroscopy and X-Ray Photoelectron Spectroscopy.
Current edition approved May 10, 2003.Oct. 1, 2008. Published September 2003.November 2008. Originally approved in 1986. Last previous edition approved in
19972003 as E1127–91 (1997).E 1127 – 03.
2
For referencedASTM standards, visit theASTM website, www.astm.org, or contactASTM Customer Service at service@astm.org. For Annual Book of ASTM Standards
, Vol 03.06.volume information, refer to the standard’s Document Summary page on the ASTM website.
3
The boldface numbers in parentheses refer to the list of references at the end of this guide.
3
Available from International Organization for Standardization (ISO), 1, ch. de la Voie-Creuse, Case postale 56, CH-1211, Geneva 20, Switzerland, http://www.iso.ch.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
1

---------------------- Page: 1 ----------------------
E1127–08
4.2 In angle lapping, the surface is lapped or polished at a small angle to improve the depth resolution as compared to a cross
section.
4.3 In mechanical cratering, a spherical or cylindrical crater is created in the surface using a rotating ball or wheel. The sloping
sides of the crater are used to improve the depth resolution as in angle lapping.
4.4 In nondestructive techniques, different methods of varying the electron information depth are involved.
5. Significance and Use
5.1 Auger electron spectroscopy yields information concerning the chemical and physical state of a solid surface in the near
surface region. Nondestructive depth profiling is limited to this near surface region. Techniques for measuring the crater depths
4
and film thicknesses are given in ((351)). .
5.2 Ion sputtering is primarily used for depths of less than the order of 1 µm.
5.3 Angle lapping or mechanical crateri
...

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Standard Practice for Pulse Counting System Dead Time Determination by Measuring Isotopic Ratios with SIMS

SIGNIFICANCE AND USE
5.1 Electron multipliers are commonly used in pulse-counting mode to detect ions from magnetic sector mass spectrometers. The electronics used to amplify, detect and count pulses from the electron multipliers always have a characteristic time interval after the detection of a pulse, during which no other pulses can be counted. This characteristic time interval is known as the “dead time.” The dead time has the effect of reducing the measured count rate compared with the “true” count rate.  
5.2 In order to measure count rates accurately over the entire dynamic range of a pulse counting detector, such as an electron multiplier, the dead time of the entire pulse counting system must be well known. Accurate count rate measurement forms the basis of isotopic ratio measurements as well as elemental abundance determinations.  
5.3 The procedure described herein has been successfully used to determine the dead time of counting systems on SIMS instruments.6 The accurate determination of the dead time by this method has been a key component of precision isotopic ratio measurements made by SIMS.
SCOPE
1.1 This practice provides the Secondary Ion Mass Spectrometry (SIMS) analyst with a method for determining the dead time of the pulse-counting detection systems on the instrument. This practice also allows the analyst to determine whether the apparent dead time is independent of count rate.  
1.2 This practice is applicable to most types of mass spectrometers that have pulse-counting detectors.  
1.3 This practice does not describe methods for precise or accurate isotopic ratio measurements.  
1.4 This practice does not describe methods for the proper operation of pulse counting systems and detectors for mass spectrometry.  
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.  
1.6 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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