ASTM E2444-11
(Terminology)Terminology Relating to Measurements Taken on Thin, Reflecting Films
Terminology Relating to Measurements Taken on Thin, Reflecting Films
SCOPE
1.1 This standard consists of terms and definitions pertaining to measurements taken on thin, reflecting films, such as found in microelectromechanical systems (MEMS) materials. In particular, the terms are related to the standards in Section , which were generated by Committee E08 on Fatigue and Fracture. Terminology E 1823 Relating to Fatigue and Fracture Testing is applicable to this standard.
1.2 The terms are listed in alphabetical order.
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Designation: E2444 −11
TerminologyRelating to
1
Measurements Taken on Thin, Reflecting Films
This standard is issued under the fixed designation E2444; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope anchor lip—in a surface-micromachining process, the free-
standing extension of the structural layer of interest around
1.1 This standard consists of terms and definitions pertain-
the edges of the anchor to its underlying layer.
ing to measurements taken on thin, reflecting films, such as
DISCUSSION—In some processes, the width of the anchor lip may be
found in microelectromechanical systems (MEMS) materials.
zero. E2244
In particular, the terms are related to the standards in Section 2,
which were generated by Committee E08 on Fatigue and
bulk micromachining—a MEMS fabrication process where
Fracture. Terminology E1823 Relating to Fatigue and Fracture the substrate is removed at specified locations. E2244,
Testing is applicable to this standard.
cantilever—a test structure that consists of a freestanding
1.2 The terms are listed in alphabetical order.
beam that is fixed at one end. E2246
fixed-fixed beam —a test structure that consists of a freestand-
2. Referenced Documents
ing beam that is fixed at both ends. E2245
2
2.1 ASTM Standards:
E1823 Terminology Relating to Fatigue and FractureTesting in-plane length (or deflection) measurement, L (or D)
E2244 Test Method for In-Plane Length Measurements of [L]—the experimental determination of the straight-line
Thin, Reflecting Films Using an Optical Interferometer distance between two transitional edges in a MEMS device.
DISCUSSION—This length (or deflection) measurement is made paral-
E2245 Test Method for Residual Strain Measurements of
lel to the underlying layer (or the xy-plane of the interferometric
Thin, Reflecting Films Using an Optical Interferometer
microscope). E2244
E2246 Test Method for Strain Gradient Measurements of
Thin, Reflecting Films Using an Optical Interferometer
interferometer—a non-contact optical instrument used to
obtain topographical 3-D data sets.
3. Terminology
DISCUSSION—The height of the sample is measured along the z-axis
of the interferometer. The x-axis is typically aligned parallel or
3.1 Terms and Their Definitions:
perpendicular to the transitional edges to be measured. E2244
2-D data trace—a two-dimensional group of points that is
MEMS—microelectromechanical systems. E2244
extracted from a topographical 3-D data set and that is
parallel to the xz-or yz-plane of the interferometric
microelectromechanical systems, MEMS—in general, this
microscope. E2244
term is used to describe micron-scale structures, sensors,
actuators, and technologies used for their manufacture (such
3-D data set—a three-dimensional group of points with a
as, silicon process technologies), or combinations thereof.
topographical z-value for each (x, y) pixel location within the
E2244
interferometric microscope’s field of view. E2244
residual strain, ´ —in a MEMS process, the amount of
anchor—in a surface-micromachining process, the portion of r
deformation (or displacement) per unit length constrained
the test structure where a structural layer is intentionally
within the structural layer of interest after fabrication yet
attached to its underlying layer. E2244
before the constraint of the sacrificial layer (or substrate) is
removed (in whole or in part) E2245
1
This test method is under the jurisdiction ofASTM Committee E08 on Fatigue
sacrificial layer—a single thickness of material that is inten-
and Fracture and is the direct responsibility of Subcommittee E08.02 on Standards
and Terminology. tionally deposited (or added) then removed (in whole or in
Current edition approved Oct. 15, 2011. Published December 2011. Orginially
part) during the micromachining process, to allow freestand-
´1
approved in 2005. Last previous edition approved in 2005 as E2444–05 . DOI:
ing microstructures. E2244
10.1520/E2444-11.
2
For referenced ASTM standards, visit the ASTM website, www.astm.org, or
stiction—adhesion between the portion of a structural layer
contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM
that is intended to be freestanding and its underlying layer.
Standards volume information, refer to the standard’s Document Summary page on
the ASTM website. E2246
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
1
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E2444 − 11
–1
(residual) strain gradient, s [L ]—a through-thickness by the deposition (or addition) and removal
...
This document is not an ASTM standard and is intended only to provide the user of an ASTM standard an indication of what changes have been made to the previous version. Because
it may not be technically possible to adequately depict all changes accurately, ASTM recommends that users consult prior editions as appropriate. In all cases only the current version
of the standard as published by ASTM is to be considered the official document.
´1
Designation:E2444–05 Designation: E2444 – 11
Terminology Relating to
1
Measurements Taken on Thin, Reflecting Films
This standard is issued under the fixed designation E2444; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1
´ NOTE—Editorial changes were made throughout in January 2006.
1. Scope
1.1 This standard consists of terms and definitions pertaining to measurements taken on thin, reflecting films, such as found in
microelectromechanical systems (MEMS) materials. In particular, the terms are related to the standards in Section 2, which were
generated by Committee E08 on Fatigue and Fracture. Terminology E1823 Relating to Fatigue and Fracture Testing is applicable
to this standard.
1.2 The terms are listed in alphabetical order.
2. Referenced Documents
2
2.1 ASTM Standards:
E1823 Terminology Relating to Fatigue and Fracture Testing
E2244 Test Method for In-Plane Length Measurements of Thin, Reflecting Films Using an Optical Interferometer
E2245 Test Method for Residual Strain Measurements of Thin, Reflecting Films Using an Optical Interferometer
E2246 Test Method for Strain Gradient Measurements of Thin, Reflecting Films Using an Optical Interferometer
3. Terminology
3.1 Terms and Their Definitions:
2-D data trace—a two-dimensional group of points that is extracted from a topographical 3-D data set and that is parallel to the
xz-or yz-plane of the interferometer. -plane of the interferometric microscope. E2244, E2245
3-D data set—a three-dimensional group of points with a topographical z-value for each (x, y) pixel location within the
interferometeric microscope’s field of view. E2244, E2245, E2246
anchor—in a surface-micromachining process, the portion of the test structure where a structural layer is intentionally attached
to its underlying layer. E2244, E2245, E2246
anchor lip—in a surface-micromachining process, the freestanding extension of the structural layer of interest around the edges
of the anchor to its underlying layer.
DISCUSSION—In some processes, the width of the anchor lip may be zero. E2244, E2245, E2246
bulk micromachining—a MEMS fabrication process where the substrate is removed at specified locations. E2244, E2245,
E2246
cantilever—a test structure that consists of a freestanding beam that is fixed at one end. E2246 E2244, E2245, E2246
fixed-fixed beam —a test structure that consists of a freestanding beam that is fixed at both ends. E2245 E2244, E2245
in-plane length (ordeflection) measurement,L (orD) [L]—the experimental determination of the straight-line distance between
two transitional edges in a MEMS device.
DISCUSSION—This length (or deflection) measurement is made parallel to the underlying layer (or the xy-plane of the interferometer). E2244
-plane of the interferometric microscope). E2244, E2245, E2246
interferometer—a non-contact optical instrument used to obtain topographical 3-D data sets.
1
This test method is under the jurisdiction of ASTM Committee E08 on Fatigue and Fracture and is the direct responsibility of Subcommittee E08.02 on Standards and
Terminology.
Current edition approved May 1, 2005. Published May 2005. DOI: 10.1520/E2444-05E01.
´1
Current edition approved Oct. 15, 2011. Published December 2011. Orginially approved in 2005. Last previous edition approved in 2005 as E2444–05 . DOI:
10.1520/E2444-11.
2
For referencedASTM standards, visit theASTM website, www.astm.org, or contactASTM Customer Service at service@astm.org. For Annual Book of ASTM Standards
volume information, refer to the standard’s Document Summary page on the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
1
---------------------- Page: 1 ----------------------
E2444 – 11
DISCUSSION—The height of the sample is measured along the z-axis of the interferometer. The interferometer’s x-axis is typically aligned parallel
or perpendicular to the transitional edges to be measured. E2244
MEMS—microelectromechanical systems. E2244
microelectromechanical systems, MEMS—in general, this term is used to describe micron-scale structures, sensors, and
actuators and the technologies used for their manufacture (such as, silicon process technologies), or both. —The height of the
sample is measured along the z-axis of the interferometer. The x-axis is
...
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