ASTM F928-02

Standard Test Methods for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates (Withdrawn 2003)

SCOPE
This standard was transferred to SEMI (www.semi.org) May 2003
1.1 These test methods provide means for examining the edge contour of circular wafers of silicon, gallium arsenide, and other electronic materials, and determining fit to limits of contour specified by a template that defines a permitted zone through which the contour must pass. Principal application of such a template is intended for, but not limited to, wafers that have been deliberately edge shaped.
1.2 Two test methods are described. One is destructive and is limited to inspection of discrete points on the periphery, including flats. The contour of deliberately edge-shaped wafers may not be uniform around the entire periphery, and thus the discrete location(s) may or may not be representative of the entire periphery. The other test method is nondestructive and suitable for inspection of all points on the wafers periphery except flats.
1.3 The nondestructive test method may also be applied to the examination of the edge contour of the outer periphery of substrates for rigid disks used for magnetic storage of data.
Note 1—Reference to wafers in the remainder of this standard shall be interpreted to include substrates for rigid disks unless the phrase "of electronic materials" is also included in the context.
1.4 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Withdrawn
• Publication Date: 09-Jan-2002
• Withdrawal Date: 11-Aug-2003
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics

Relations

• Replaces: ASTM F928-93(1999) - Standard Test Methods for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates
• Effective Date: 10-Jan-2002

Standards Content (Sample)

NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
Designation: F 928 – 02
Standard Test Methods for
Edge Contour of Circular Semiconductor Wafers and Rigid
1
Disk Substrates
This standard is issued under the fixed designation F 928; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope priate safety and health practices and determine the applica-
2
bility of regulatory limitations prior to use.
1.1 These test methods provide means for examining the
edge contour of circular wafers of silicon, gallium arsenide,
2. Referenced Documents
and other electronic materials, and determining fit to limits of
2.1 ANSI Standard:
contour specified by a template that defines a permitted zone
ANSI/ASQC Z1.4–1993 Sampling Procedures and Tables
through which the contour must pass. Principal application of
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for Inspection by Attributes
such a template is intended for, but not limited to, wafers that
2.2 SEMI Standards:
have been deliberately edge shaped.
SEMI M1, Specifications for Polished Monocrystalline Sili-
1.2 Two test methods are described. One is destructive and
4
con Wafers
is limited to inspection of discrete points on the periphery,
SEMI M9, Specifications for Polished Monocrystalline
including flats. The contour of deliberately edge-shaped wafers
4
Gallium Arsenide Slices
may not be uniform around the entire periphery, and thus the
discrete location(s) may or may not be representative of the
3. Summary of Test Methods
entire periphery. The other test method is nondestructive and
3.1 Both test methods employ optical means to project a
suitable for inspection of all points on the wafers periphery
shadow of the edge contour at substantial magnification on a
except flats.
screen. In applying Method A (destructive) the sample wafer is
1.3 The nondestructive test method may also be applied to
cleaved or broken along a diameter. A sharply focused image of
the examination of the edge contour of the outer periphery of
the cross section of the wafer is obtained over a sufficiently
substrates for rigid disks used for magnetic storage of data.
large region near the edge with the aid of an optical comparator
NOTE 1—Reference to wafers in the remainder of this standard shall be
or projection microscope. In Method B (nondestructive) the
interpreted to include substrates for rigid disks unless the phrase “of
unbroken wafer is back lighted with collimated (parallel) light
electronic materials” is also included in the context.
such that a sharply defined shadow of the wafer edge is
1.4 The values stated in SI units are to be regarded as the
projected on a screen. In this test method the wafer is not
standard. The values given in parentheses are for information
altered in any way.
only.
3.2 By either test method, the contour of the wafer edge
1.5 This standard does not purport to address all of the
profile image is compared to a template that has been mounted
safety concerns, if any, associated with its use. It is the
or projected on the screen. The template defines a permitted
responsibility of the user of this standard to establish appro-
zone through which the edge contour must pass.
4. Significance and Use
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These test methods are under the jurisdiction of ASTM Committee F01 on 4.1 The edges of circular wafers of electronic materials are
Electronics and are the direct responsibility of Subcommittee F01.06 on Silicon
frequently required to be shaped after cutting the wafers from
Materials and Process Control.
the ingot. Contouring the wafer edge reduces the incidence of
Current edition approved Jan. 10, 2002. Published March 2002. Originally
published as F 928 – 85. Last previous edition F 928 – 93.
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DIN 50441/2 is equivalent to Method B of this standard. It is the responsibility
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of DIN Committee NMP 221 with which Committee F01 maintains close technical Available from American National Standards Institute, 1819 L Street N.W.,
liaison. DIN 50441/2, Measurement of the Geometric Dimensions of Semiconductor Washington, DC 20036.
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Slices; Testing of Edge Rounding, is available from Beuth Verlag GmbH, Burg- Available from the Semiconductor Equipment and Materials International,
grafenstrasse 4-10, D-1000 Berlin 30, FRG. 3081 Zanker Road, San Jose, CA 95135 (www.semi.org).
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
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NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
F 928–02
chipping and minimizes epitaxial edge crown and photore
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