ASTM F2113-01(2007)

Standard Guide for Analysis and Reporting the Impurity Content and Grade of High Purity Metallic Sputtering Targets for Electronic Thin Film Applications

ABSTRACT
This guide covers sputtering targets used as thin film source material in fabricating semiconductor electronic devices. It should be used to develop target specifications for specific materials. This standard sets purity grade levels, analytical methods and impurity content reporting method and format. The grade designation is a measure of total metallic impurity content. It does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance. Analysis for trace metallic impurities and gases shall be performed on samples that represent the finished sputtering target. Carbon, oxygen, and sulfur shall be analysed by fusion and gas extraction/infrared spectroscopy. Nitrogen and hydrogen shall be analysed by fusion and gas extraction.
SCOPE
1.1 This guide covers sputtering targets used as thin film source material in fabricating semiconductor electronic devices. It should be used to develop target specifications for specific materials and should be referenced therein.
1.2 This standard sets purity grade levels, analytical methods and impurity content reporting method and format.
1.2.1 The grade designation is a measure of total metallic impurity content. The grade designation does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance.

General Information

• Status: Historical
• Publication Date: 31-May-2007
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics
• Drafting Committee: F01.17 - Sputter Metallization

Relations

• Replaces: ASTM F2113-01e1 - Standard Guide for Analysis and Reporting the Impurity Content and Grade of High Purity Metallic Sputtering Targets for Electronic Thin Film Applications
• Effective Date: 01-Jun-2007
• Replaced By: ASTM F2113-01(2011) - Standard Guide for Analysis and Reporting the Impurity Content and Grade of High Purity Metallic Sputtering Targets for Electronic Thin Film Applications (Withdrawn 2020)
• Effective Date: 01-Jun-2011
• Referred By: ASTM F3192-16 - Standard Specification for High-Purity Copper Sputtering Target Used for Through-Silicon Vias (TSV) Mettalization (Withdrawn 2023)
• Effective Date: 01-Jun-2007

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation:F2113–01 (Reapproved 2007)
Standard Guide for
Analysis and Reporting the Impurity Content and Grade of
High Purity Metallic Sputtering Targets for Electronic Thin
Film Applications
This standard is issued under the fixed designation F2113; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope 3.2.1 mdl—minimum detection limit
1.1 This guide covers sputtering targets used as thin film
4. Impurities
source material in fabricating semiconductor electronic de-
4.1 The minimum set of metallic impurity elements to be
vices. It should be used to develop target specifications for
analyzed shall be developed and listed in the target specifica-
specific materials and should be referenced therein.
tion or agreed upon by the purchaser and supplier.
1.2 This standard sets purity grade levels, analytical meth-
4.2 Acceptable analysis methods and detection limits are to
ods and impurity content reporting method and format.
be specified in the target specification. Elements not detected
1.2.1 The grade designation is a measure of total metallic
will be counted and reported as present at the minimum
impurity content. The grade designation does not necessarily
detection limit (“mdl”) for the method used. Additional ele-
indicate suitability for a particular application because factors
ments may be analyzed and reported as agreed upon between
other than total metallic impurity may influence performance.
the purchaser and the supplier, but these elements shall not be
2. Referenced Documents counted in defining the grade designation.
4.3 Certain elements may present particular analysis prob-
2.1 ASTM Standards:
lems, such as interferences. The limits, analysis method, and
F1593 Test Method for Trace Metallic Impurities in Elec-
mdl may, in such cases, be as agreed upon between the
tronic Grade Aluminum by High Mass-Resolution Glow-
purchaser and the supplier.
Discharge Mass Spectrometer
4.4 Nonmetallic elements, which shall be analyzed and
3. Terminology
reported, are carbon, hydrogen, nitrogen, oxygen, and sulfur.
Maximum limits for nonmetallic impurities shall be agreed
3.1 Definitions of Terms Specific to This Standard:
upon between the purchaser and the supplier.
3.1.1 finished product, n—for the purpose of this standard,
4.5 Acceptable limits and analytical techniques for particu-
a “finished product” is a manufactured sputtering target, ready
lar elements in critical applications may be agreed upon
for use.
between the purchaser and the supplier.
3.1.2 material lot, n—for the purpose of this standard,a
“lot” is material consolidated into one ingot, and processed as
5. Classification
one continuous batch in subsequent thermal-mechanical treat-
5.1 GradesofmetallicsputteringtargetsaredefinedinTable
ments.
1, based upon total metallic impurity content of the set of
3.1.3 target specification, n—for the purpose of this stan-
elements as specified in 4.1. Impurity contents are reported in
dard, a specification for a sputtering target source material for
parts per million by weight (wt ppm).
electronic thin film applications.
5.2 Purity grade and total metallic impurity levels are based
3.2 Abbreviations:
upon the set of elements as specified in 4.1.
6. Sampling
This guide is under the jurisdiction of ASTM Committee F01 on Electronics
and is the direct responsibility of Subcommittee F01.17 on Sputter Metallization.
6.1 Analysis for impurities and gases shall be performed on
CurrenteditionapprovedJune1,2007.PublishedJuly2007.Originallyapproved
´1
samples that represent the finished sputtering target.
in 2001. Last previous edition approved in 2001 as F2113 - 01 . DOI: 10.1520/
F2113-01R07.
6.1.1 Unless otherwise agreed upon between the purchaser
For referenced ASTM standards, visit the ASTM website, www.astm.org, or
and the supplier, impurity analyses for metallic and nonmetal-
contact ASTM Customer Service at [e-mail]. For Annual Book of ASTM
lic impurities shall be made by the supplier for one or more
Standards volume information, refer to the standard’s Document Summary page on
sample specimens that are representative of the production lot.
the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United Sta
...