ASTM F3166-16
(Specification)Standard Specification for High-Purity Titanium Sputtering Target Used for Through-Silicon Vias (TSV) Metallization (Withdrawn 2023)
Standard Specification for High-Purity Titanium Sputtering Target Used for Through-Silicon Vias (TSV) Metallization (Withdrawn 2023)
SCOPE
1.1 This specification details the generic criteria requirements of high pure titanium sputtering targets used as thin film material for through-silicon vias (TSV) metallization in advance packaging.
1.2 Sputtering target purity, grain size, inner quality, bonding, dimension, and appearance specifications are included in this specification along with references for qualification test methods. Reliability, certification, traceability, and packaging requirements are also included.
1.2.1 Purity Requirements:
1.2.1.1 Metallic element impurities, and
1.2.1.2 Non-metallic element impurities.
1.2.2 Grain Size Requirements—Grain size.
1.2.3 Inner Quality Requirements—Internal defect.
1.2.4 Bonding Requirements:
1.2.4.1 Backing plate, and
1.2.4.2 Bonding ratio.
1.2.5 Configuration Requirements:
1.2.5.1 Dimension,
1.2.5.2 Tolerance, and
1.2.5.3 Surface roughness.
1.2.6 Appearance Requirements—Surface cleanness.
1.3 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
WITHDRAWN RATIONALE
This specification details the generic criteria requirements of high pure titanium sputtering targets used as thin film material for through-silicon vias (TSV) metallization in advance packaging.
Formerly under the jurisdiction of Committee F01 on Electronics, this specification was withdrawn in November 2023. This standard is being withdrawn without replacement because Committee F01 was disbanded.
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This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the
Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.
Designation:F3166 −16
Standard Specification for
High-Purity Titanium Sputtering Target Used for Through-
1
Silicon Vias (TSV) Metallization
This standard is issued under the fixed designation F3166; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope 2. Referenced Documents
2
2.1 ASTM Standards:
1.1 This specification details the generic criteria require-
B209 Specification for Aluminum and Aluminum-Alloy
ments of high pure titanium sputtering targets used as thin film
Sheet and Plate
material for through-silicon vias (TSV) metallization in ad-
B248 Specification for General Requirements for Wrought
vance packaging.
Copper and Copper-Alloy Plate, Sheet, Strip, and Rolled
1.2 Sputtering target purity, grain size, inner quality,
Bar
bonding, dimension, and appearance specifications are in-
E112 Test Methods for Determining Average Grain Size
cluded in this specification along with references for qualifi-
E1001 Practice for Detection and Evaluation of Discontinui-
cation test methods. Reliability, certification, traceability, and ties by the Immersed Pulse-Echo Ultrasonic Method
packaging requirements are also included. Using Longitudinal Waves
F1512 Practice for Ultrasonic C-Scan Bond Evaluation of
1.2.1 Purity Requirements:
Sputtering Target-Backing Plate Assemblies
1.2.1.1 Metallic element impurities, and
F1709 Specification for High Purity Titanium Sputtering
1.2.1.2 Non-metallic element impurities.
Targets for Electronic Thin Film Applications
1.2.2 Grain Size Requirements—Grain size.
F1710 Test Method for Trace Metallic Impurities in Elec-
tronic Grade Titanium by High Mass-Resolution Glow
1.2.3 Inner Quality Requirements—Internal defect.
Discharge Mass Spectrometer
1.2.4 Bonding Requirements:
2.2 ASME Standard:
1.2.4.1 Backing plate, and
3
Y14.5M Dimensioning and Tolerancing
1.2.4.2 Bonding ratio.
3. Terminology
1.2.5 Configuration Requirements:
1.2.5.1 Dimension, 3.1 Definitions:
3.1.1 backing plate, n—plate used to support the sputtering
1.2.5.2 Tolerance, and
material used in deposition processes.
1.2.5.3 Surface roughness.
1.2.6 Appearance Requirements—Surface cleanness. 3.1.1.1 Discussion—Assembling with the sputtering mate-
rial by various bonding methods.
1.3 The values stated in SI units are to be regarded as
3.1.2 sputtering target, n—source material during sputter
standard. No other units of measurement are included in this
deposition processes; typically, a piece of material inside the
standard.
vacuumchamberthatisexposedtobombardingions,knocking
source atoms loose and onto samples.
1.4 This standard does not purport to address all of the
safety concerns, if any, associated with its use. It is the
3.1.2.1 Discussion—The sputtering target product can be
responsibility of the user of this standard to establish appro-
classified as monolithic or assembly type according to the
priate safety and health practices and determine the applica-
configurations as shown in Fig. 1.
bility of regulatory limitations prior to use.
2
For referenced ASTM standards, visit the ASTM website, www.astm.org, or
contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM
1
This specification is under the jurisdiction of ASTM Committee F01 on Standards volume information, refer to the standard’s Document Summary page on
Electronics and is the direct responsibility of Subcommittee F01.17 on Sputter the ASTM website.
3
Metallization. Available from American Society of Mechanical Engineers (ASME), ASME
Current edition approved May 1, 2016. Published July 2016. DOI: 10.1520/ International Headquarters, Two Park Ave., New York, NY 10016-5990, http://
F3166-16. www.asme.org.
Copyright ©ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA19428-2959. United States
1
---------------------- Page: 1 ----------------------
F3166−16
when purchasing sputtering target. Target suppliers may also
use this specification to specify material requirements to raw
material suppliers.
4.2 Orders for pure titanium sputtering targets shall include
the following:
4.2.1 Gradeandspecialrequirementsconcerningimpurities,
if required (Section 5),
4.2.2 Grain size, if required (Section 6),
4.2.3 Inner quality, if required (Section 7),
4.2.4 Bonding ratio, if required (Section 8),
4.2.5 Dimensions, Tolerance and Surface Roughness (Sec-
tion 9),
4.2.6 Certification required (Section 14), and
4.2.7 Whether or not a sample representative of the finished
product
...
NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation: F3166 − 16
Standard Specification for
High-Purity Titanium Sputtering Target Used for Through-
1
Silicon Vias (TSV) Metallization
This standard is issued under the fixed designation F3166; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope 2. Referenced Documents
2
2.1 ASTM Standards:
1.1 This specification details the generic criteria require-
B209 Specification for Aluminum and Aluminum-Alloy
ments of high pure titanium sputtering targets used as thin film
Sheet and Plate
material for through-silicon vias (TSV) metallization in ad-
B248 Specification for General Requirements for Wrought
vance packaging.
Copper and Copper-Alloy Plate, Sheet, Strip, and Rolled
1.2 Sputtering target purity, grain size, inner quality,
Bar
bonding, dimension, and appearance specifications are in-
E112 Test Methods for Determining Average Grain Size
cluded in this specification along with references for qualifi-
E1001 Practice for Detection and Evaluation of Discontinui-
cation test methods. Reliability, certification, traceability, and
ties by the Immersed Pulse-Echo Ultrasonic Method
packaging requirements are also included. Using Longitudinal Waves
F1512 Practice for Ultrasonic C-Scan Bond Evaluation of
1.2.1 Purity Requirements:
Sputtering Target-Backing Plate Assemblies
1.2.1.1 Metallic element impurities, and
F1709 Specification for High Purity Titanium Sputtering
1.2.1.2 Non-metallic element impurities.
Targets for Electronic Thin Film Applications
1.2.2 Grain Size Requirements—Grain size.
F1710 Test Method for Trace Metallic Impurities in Elec-
tronic Grade Titanium by High Mass-Resolution Glow
1.2.3 Inner Quality Requirements—Internal defect.
Discharge Mass Spectrometer
1.2.4 Bonding Requirements:
2.2 ASME Standard:
1.2.4.1 Backing plate, and
3
Y14.5M Dimensioning and Tolerancing
1.2.4.2 Bonding ratio.
3. Terminology
1.2.5 Configuration Requirements:
1.2.5.1 Dimension,
3.1 Definitions:
3.1.1 backing plate, n—plate used to support the sputtering
1.2.5.2 Tolerance, and
material used in deposition processes.
1.2.5.3 Surface roughness.
3.1.1.1 Discussion—Assembling with the sputtering mate-
1.2.6 Appearance Requirements—Surface cleanness.
rial by various bonding methods.
1.3 The values stated in SI units are to be regarded as
3.1.2 sputtering target, n—source material during sputter
standard. No other units of measurement are included in this
deposition processes; typically, a piece of material inside the
standard.
vacuum chamber that is exposed to bombarding ions, knocking
source atoms loose and onto samples.
1.4 This standard does not purport to address all of the
safety concerns, if any, associated with its use. It is the
3.1.2.1 Discussion—The sputtering target product can be
responsibility of the user of this standard to establish appro-
classified as monolithic or assembly type according to the
priate safety and health practices and determine the applica-
configurations as shown in Fig. 1.
bility of regulatory limitations prior to use.
2
For referenced ASTM standards, visit the ASTM website, www.astm.org, or
contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM
1
This specification is under the jurisdiction of ASTM Committee F01 on Standards volume information, refer to the standard’s Document Summary page on
Electronics and is the direct responsibility of Subcommittee F01.17 on Sputter the ASTM website.
3
Metallization. Available from American Society of Mechanical Engineers (ASME), ASME
Current edition approved May 1, 2016. Published July 2016. DOI: 10.1520/ International Headquarters, Two Park Ave., New York, NY 10016-5990, http://
F3166-16. www.asme.org.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
1
---------------------- Page: 1 ----------------------
F3166 − 16
when purchasing sputtering target. Target suppliers may also
use this specification to specify material requirements to raw
material suppliers.
4.2 Orders for pure titanium sputtering targets shall include
the following:
4.2.1 Grade and special requirements concerning impurities,
if required (Section 5),
4.2.2 Grain size, if required (Section 6),
4.2.3 Inner quality, if required (Section 7),
4.2.4 Bonding ratio, if required (Section 8),
4.2.5 Dimensions, Tolerance and Surface Roughness (Sec-
tion 9),
4.2.6 Certification required (Section 14), and
4.2.7 Whether or not a sample representative of the finished
product is required to be provided by the supplier to the
purchaser.
FIG. 1 Sputtering Target Configuration
5. Purity Requirem
...
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