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ASTM E1855-04e1

(Test Method)

Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors

Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors

SCOPE
1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra, and as silicon 1-MeV equivalent displacement damage fluence monitors.
1.2 The neutron displacement damage is especially valuable as a spectrum sensor in the range 0.1 to 2.0 MeV when fission foils are not available. It has been applied in the fluence range between 2 × 10 12 n/cm2 and 1 × 1014 n/cm2 and should be useful up to 1015 n/cm2. This test method details the steps for the acquisition and use of silicon 1-MeV equivalent fluence information (in a manner similar to the use of activation foil data) for the determination of neutron spectra.
1.3 In addition, this sensor can provide important confirmation of neutron spectra determined with other sensors, and yields a direct measurement of the silicon 1-MeV fluence by the transfer technique.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory requirements prior to use.

General Information

Status
Historical
Publication Date
31-May-2004
ICS
31.200 - Integrated circuits. Microelectronics
Technical Committee
E10 - Nuclear Technology and Applications
Drafting Committee
E10.07 - Radiation Dosimetry for Radiation Effects on Materials and Devices
Current Stage
Ref Project

Relations

Replaces
ASTM E1855-04 - Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
Effective Date
01-Jun-2004
Replaced By
ASTM E1855-05 - Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
Effective Date
01-Jul-2005
Referred By
ASTM F1190-18 - Standard Guide for Neutron Irradiation of Unbiased Electronic Components
Effective Date
01-Jun-2004
Referred By
ASTM E1854-19 - Standard Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts
Effective Date
01-Jun-2004
Referred By
ASTM F980-16 - Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
Effective Date
01-Jun-2004
Referred By
ASTM E721-22 - Standard Guide for Determining Neutron Energy Spectra from Neutron Sensors for Radiation-Hardness Testing of Electronics
Effective Date
01-Jun-2004

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ASTM E1855-04e1 - Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage MonitorsASTM E1855-04e1 - Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
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ASTM E1855-04e1 - Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
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Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
e1
Designation:E1855–04
Standard Test Method for
Use of 2N2222A Silicon Bipolar Transistors as Neutron
1
Spectrum Sensors and Displacement Damage Monitors
This standard is issued under the fixed designation E1855; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1
e NOTE—Editorial corrections were made in Equation 5 and throughout the document in April 2005.
1. Scope E170 Terminology Relating to Radiation Measurements
and Dosimetry
1.1 This test method covers the use of 2N2222A silicon
E261 Practice for Determining Neutron Fluence Rate, Flu-
bipolartransistorsasdosimetrysensorsinthedeterminationof
ence, and Spectra Radioactivation Techniques
neutron energy spectra, and as silicon 1-MeV equivalent
E263 Test Method for Measuring Fast-Neutron Reaction
displacement damage fluence monitors.
Rates by Radioactivation of Iron
1.2 Theneutrondisplacementdamageisespeciallyvaluable
E265 Test Method for Measuring Reaction Rates and
as a spectrum sensor in the range 0.1 to 2.0 MeV when fission
Fast-Neutron Fluences by Radioactivation of Sulfur-32
foils are not available. It has been applied in the fluence range
2 14 2
E720 Guide for Selection and Use of Neutron-Activation
between 2 3 10 12 n/cm and 1 3 10 n/cm and should be
2
Foils for Determining Neutron Spectra Employed in
useful up to 1015 n/cm . This test method details the steps for
Radiation-Hardness Testing of Electronics
the acquisition and use of silicon 1-MeV equivalent fluence
E721 Guide for Determining Neutron Energy Spectra from
information (in a manner similar to the use of activation foil
Neutron Sensors for Radiation-Hardness Testing of Elec-
data) for the determination of neutron spectra.
tronics
1.3 In addition, this sensor can provide important confirma-
E722 Practice for Characterizing Neutron Energy Fluence
tion of neutron spectra determined with other sensors, and
Spectra inTerms of an Equivalent Monoenergetic Neutron
yields a direct measurement of the silicon 1-MeV fluence by
Fluence for Radiation-Hardness Testing of Electronics
the transfer technique.
E844 Guide for Sensor Set Design and Irradiation for
1.4 This standard does not purport to address all of the
Reactor Surveillance, E706 (IIC)
safety concerns, if any, associated with its use. It is the
E854 Test Method for Application and Analysis of Solid
responsibility of the user of this standard to establish appro-
State Track Recorder (SSTR) Monitors for Reactor Sur-
priate safety and health practices and determine the applica-
veillance, E706 (IIIB)
bility of regulatory requirements prior to use.
E944 PracticeforApplicationofNeutronSpectrumAdjust-
2. Referenced Documents
ment Methods in Reactor Surveillance, (IIA)
E1854 Practice for Ensuring Test Consistency in Neutron-
2.1 The ASTM standards listed in 2.2 from Terminology
Induced Displacement Damage of Electronic Parts
E170 through Test Method E265 provide a background for
E2005 Guide for the Benchmark Testing of Reactor Do-
understandinghowsensorsareusedinradiationmeasurements
simetry in Standard and Reference Neutron Fields
and general dosimetry. The rest of the standards referenced in
the list discuss the choice of sensors, spectrum determinations
3. Terminology
with sensor data, and the prediction of neutron displacement
3.1 Symbols:
damage in some semiconductor devices, particularly silicon.
2
F =the silicon 1-MeV equivalent fluence (see Practice
1
2.2 ASTM Standards:
E722).
h =i /i where i is the collector current and i is the base
FE c b c b
1
ThistestmethodisunderthejurisdictionofASTMCommitteeE10onNuclear
current, in a common emitter circuit.
Technology and Applications and is the direct responsibility of Subcommittee
E10.07 on Radiation Dosimetry for Radiation Effects on Materials and Devices.
CurrenteditionapprovedJune1,2004.PublishedJuly2004.Originallyapproved
in 1996. Last previous edition approved in 1996 as E1855–96.
2
For referenced ASTM standards, visit the ASTM website, www.astm.org, or
contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM
Standards volume information, refer to the standard’s Document Summary page on
the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
1

---------------------- Page: 1 ----------------------
e1
E1855–04
4. Summary of Test Method 5.2 If fission foils are a part of the sensor set, the silicon
sensor provides an important confirmation of the spectrum
4.1 Gaindegradationof2N2222Asiliconbipolartransistors
shape.
measured in a test (simulation) environment is compared with
5.3 Bipolartransistors,su
...

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5.1 The neutron test spectrum must be known in order to use a measured device response to predict the device performance in an operational environment (Practice E1854). Typically, neutron spectra are determined using a set of sensors with response functions sensitive over the neutron energy region to which the device under test (DUT) responds (Guide E721). For silicon bipolar devices exposed in reactor neutron spectra, this effective energy range is between 0.01 and 10 MeV. A typical set of activation reactions that lack fission reactions from nuclides such as 235U, 237Np, or 239Pu, will have very poor sensitivity to the spectrum between 0.01 and 2 MeV. For a pool-type reactor spectrum, 70 % of the DUT electronic damage response may lie in this range making its determination of critical importance.  
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