ASTM F2113-01e1

Standard Guide for Analysis and Reporting the Impurity Content and Grade of High Purity Metallic Sputtering Targets for Electronic Thin Film Applications

SCOPE
1.1 This guide covers sputtering targets used as thin film source material in fabricating semiconductor electronic devices. It should be used to develop target specifications for specific materials and should be referenced therein.
1.2 This standard sets purity grade levels, analytical methods and impurity content reporting method and format.
1.2.1 The grade designation is a measure of total metallic impurity content. The grade designation does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance.

General Information

• Status: Historical
• Publication Date: 09-Jun-2001
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics
• Drafting Committee: F01.17 - Sputter Metallization

Relations

• Replaces: ASTM F2113-01 - Standard Guide for Analysis and Reporting the Impurity Content and Grade of High Purity Metallic Sputtering Targets for Electronic Thin Film Applications
• Effective Date: 10-Jun-2001
• Replaced By: ASTM F2113-01(2007) - Standard Guide for Analysis and Reporting the Impurity Content and Grade of High Purity Metallic Sputtering Targets for Electronic Thin Film Applications
• Effective Date: 01-Jun-2007
• Referred By: ASTM F3192-16 - Standard Specification for High-Purity Copper Sputtering Target Used for Through-Silicon Vias (TSV) Mettalization (Withdrawn 2023)
• Effective Date: 10-Jun-2001

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
e1
Designation:F2113–01
Standard Guide for
Analysis and Reporting the Impurity Content and Grade of
High Purity Metallic Sputtering Targets for Electronic Thin
1
Film Applications
This standard is issued under the fixed designation F 2113; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1
e NOTE—Grade 3N5 was added to Table 1 in October 2001.
1. Scope 4. Impurities
1.1 This guide covers sputtering targets used as thin film 4.1 The minimum set of metallic impurity elements to be
source material in fabricating semiconductor electronic de- analyzed shall be developed and listed in the target specifica-
vices. It should be used to develop target specifications for tion or agreed upon by the purchaser and supplier.
specific materials and should be referenced therein. 4.2 Acceptable analysis methods and detection limits are to
1.2 This standard sets purity grade levels, analytical meth- be specified in the target specification. Elements not detected
ods and impurity content reporting method and format. will be counted and reported as present at the minimum
1.2.1 The grade designation is a measure of total metallic detection limit (“mdl”) for the method used. Additional ele-
impurity content. The grade designation does not necessarily ments may be analyzed and reported as agreed upon between
indicate suitability for a particular application because factors the purchaser and the supplier, but these elements shall not be
other than total metallic impurity may influence performance. counted in defining the grade designation.
4.3 Certain elements may present particular analysis prob-
2. Referenced Documents
lems, such as interferences. The limits, analysis method, and
2.1 ASTM Standards: mdl may, in such cases, be as agreed upon between the
F 1593 Test Method for Trace Metallic Impurities in Elec-
purchaser and the supplier.
tronic Grade Aluminum by High Mass-Resolution Glow- 4.4 Nonmetallic elements, which shall be analyzed and
2
Discharge Mass Spectrometer reported, are carbon, hydrogen, nitrogen, oxygen, and sulfur.
Maximum limits for nonmetallic impurities shall be agreed
3. Terminology
upon between the purchaser and the supplier.
3.1 Definitions of Terms Specific to This Standard:
4.5 Acceptable limits and analytical techniques for particu-
3.1.1 finished product, n—for the purpose of this standard,
lar elements in critical applications may be agreed upon
a “finished product” is a manufactured sputtering target, ready
between the purchaser and the supplier.
for use.
5. Classification
3.1.2 material lot, n—for the purpose of this standard,a
“lot” is material consolidated into one ingot, and processed as
5.1 GradesofmetallicsputteringtargetsaredefinedinTable
one continuous batch in subsequent thermal-mechanical treat- 1, based upon total metallic impurity content of the set of
ments.
elements as specified in 4.1. Impurity contents are reported in
3.1.3 target specification, n—for the purpose of this stan- parts per million by weight (wt ppm).
dard, a specification for a sputtering target source material for
5.2 Purity grade and total metallic impurity levels are based
electronic thin film applications. upon the set of elements as specified in 4.1.
3.2 Abbreviations:
6. Sampling
3.2.1 mdl—minimum detection limit
6.1 Analysis for impurities and gases shall be performed on
samples that represent the finished sputtering target.
6.1.1 Unless otherwise agreed upon between the purchaser
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This guide is under the jurisdiction of ASTM Committee F01 on Electronics
and the supplier, impurity analyses for metallic and nonmetal-
and is the direct responsibility of Subcommittee F01.17 on Sputtered Thin Films.
lic impurities shall be made by the supplier for one or more
Current edition approved June 10, 2001. Published August 2001.
2
Annual Book of ASTM Standards, Vol 10.04. sample specimens that are representative of the production lot.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
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F2113
TABLE 1 Metallic Sputtering Target Grades
7.1.4 Hydrogen—By fusion and gas extraction with mdl
Grade Purity, % Maximum Total Metallic Impurity Content, wt ppm typically# 3 weight ppm.
7.1.5 Other analytical techniques may be used provided
3N5 99.95 500
4N 99.99 100
they can be proved equivalent to the methods specified and
4N5 99.995 50
have sum of mdl for the list defined in 4.1 less than or equal to
5N 99.999 10
onetenth(0.1)ofthemaximumimpuritycontentlistedinTable
5N5 99.9995 5
6N 99.9999 1
1 (for a given grade).
8. Certificati
...