EN 60747-5-3:2001/A1:2002

Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods

EN following parallel vote

Einzel-Halbleiterbauelemente und integrierte Schaltungen - Teil 5-3: Optoelektrische Bauelemente - Messverfahren

Dispositifs discrets à semiconducteurs et circuits intégrés - Partie 5-3: Dispositifs optoélectroniques - Méthodes de mesure

Diskretni polprevodniki in integrirana vezja - 5-3. del: Optoelektronske naprave - Merilne metode - Dopolnilo A1 (IEC 60747- 5-3:1997/A1:2002)

General Information

• Status: Withdrawn
• Publication Date: 23-May-2002
• Withdrawal Date: 30-Apr-2005
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: CLC/SR 47E - Discrete semiconductor devices
• Drafting Committee: IEC/SC 47E - IEC_SC_47E
• Parallel Committee: IEC/SC 47E - IEC_SC_47E
• Ref Project: SIST EN 60747-5-3:2002/A1:2004 - Discrete semiconductor devices and integrated circuits -- Part 5-3: Optoelectronic devices - Measuring methods

Relations

• Amends: EN 60747-5-3:2001 - Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
• Effective Date: 29-Jan-2023

Standards Content (Sample)

SLOVENSKI STANDARD
01-november-2004
Diskretni polprevodniki in integrirana vezja - 5-3. del: Optoelektronske naprave -
Merilne metode - Dopolnilo A1 (IEC 60747- 5-3:1997/A1:2002)
Discrete semiconductor devices and integrated circuits -- Part 5-3: Optoelectronic
devices - Measuring methods
Einzel-Halbleiterbauelemente und integrierte Schaltungen -- Teil 5-3: Optoelektrische
Bauelemente - Messverfahren
Dispositifs discrets à semiconducteurs et circuits intégrés -- Partie 5-3: Dispositifs
optoélectroniques - Méthodes de mesure
Ta slovenski standard je istoveten z: EN 60747-5-3:2001/A1:2002
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
31.200 Integrirana vezja, Integrated circuits.
mikroelektronika Microelectronics
31.260 Optoelektronika, laserska Optoelectronics. Laser
oprema equipment
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

EUROPEAN STANDARD EN 60747-5-3/A1
NORME EUROPÉENNE
EUROPÄISCHE NORM May 2002
ICS 31.080.99
English version
Discrete semiconductor devices and integrated circuits
Part 5-3: Optoelectronic devices -
Measuring methods
(IEC 60747-5-3:1997/A1:2002)
Dispositifs discrets à semiconducteurs Einzel-Halbleiterbauelemente
et circuits intégrés und integrierte Schaltungen
Partie 5-3: Dispositifs optoélectroniques - Teil 5-3: Optoelektrische Bauelemente -
Méthodes de mesure Messverfahren
(CEI 60747-5-3:1997/A1:2002) (IEC 60747-5-3:1997/A1:2002)
This amendment A1 modifies the European Standard EN 60747-5-3:2001; it was approved by CENELEC
on 2002-05-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations
which stipulate the conditions for giving this amendment the status of a national standard without any
alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.
This amendment exists in three official versions (English, French, German). A version in any other language
made by translation under the responsibility of a CENELEC member into its own language and notified to the
Central Secretariat has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Republic,
Denmark, Finland, France, Germany, Greece, Iceland, Ireland, Italy, Luxembourg, Malta, Netherlands,
Norway, Portugal, Spain, Sweden, Switzerland and United Kingdom.
CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
Central Secretariat: rue de Stassart 35, B - 1050 Brussels
© 2002 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 60747-5-3:2001/A1:2002 E

Foreword
The text of document 47E/210/FDIS, future amendment 1 to IEC 60747-5-3:1997, prepared by
SC 47E, Discrete semiconductor devices, of IEC TC 47, Semiconductor devices, was submitted to the
IEC-CENELEC parallel vote and was approved by CENELEC as amendment A1 to
EN 60747-5-3:2001 on 2002-05-01.
The following dates were fixed:
– latest date by which the amendment has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2003-02-01
– latest date by which the national standards conflicting
with the amendment have to be withdrawn (dow) 2005-05-01
__________
Endorsement notice
The text of amendment 1:2002 to the International Standard IEC 60747-5-3:1997 was approved by
CENELEC as an amendment to the European Standard without any modification.
__________
NORME CEI
INTERNATIONALE IEC
60747-5-3
INTERNATIONAL
STANDARD
AMENDEMENT 1
AMENDMENT 1
2002-03
Amendement 1
Dispositifs discrets à semiconducteurs
et circuits intégrés –
Partie 5-3:
Dispositifs optoélectroniques –
Méthodes de mesure
Amendment 1
Discrete semiconductor devices
and integrated circuits –
Part 5-3:
Optoelectronic devices –
Measuring methods
 IEC 2002 Droits de reproduction réservés  Copyright - all rights reserved
International Electrotechnical Commission, 3, rue de Varembé, PO Box 131, CH-1211 Geneva 20, Switzerland
Telephone: [phone] Telefax: [phone] E-mail: [e-mail]  Web: www.iec.ch
CODE PRIX
M
Commission Electrotechnique Internationale
PRICE CODE
International Electrotechnical Commission
Международная Электротехническая Комиссия
Pour prix, voir catalogue en vigueur
For price, see current catalogue

60747-5-3 Amend. 1  IEC:2002 – 3 –
FOREWORD
This amendment has been prepared by subcommittee 47E: Discrete semiconductor devices,
of IEC technical committee 47: Semiconductor devices.
The text of this amendment is based on the following documents:
FDIS Report on voting
47E/210/FDIS 47E/215/RVD
Full information on the voting for the approval of this amendment can be found in the report
on voting indicated in the above table.
The committee has decided that the contents of the base publication and its amendments will
remain unchanged until 2004. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
____________
Page 57
Add the following new subclauses 5.8 to 5.15.2:
5.8 Peak off-state current (I )
DRM
a) Purpose
To measure the forward leakage current between the output terminals in off-state under
specified conditions.
60747-5-3 Amend. 1  IEC:2002 – 5 –
b) Circuit diagram
DC method
R
S
T1
A
V
T2
IEC  689/02
AC method
R
S
T1
R
T2
OSC OSC
IEC  690/02
R Current limiting resistor
S
R Current detecting resistor
Figure 26 – Measurement circuit for peak off-state current
c) Measurement procedure
1) DC method
The peak off-state current (I ) is measured with the specified forward off-state
DRM
voltage which is applied between the output terminals in off-state.
The peak off-state current (I ) is measured again with inverted polarity of the output
DRM
terminals (T1, T2) by applying the reverse voltage/current between the terminals.

60747-5-3 Amend. 1  IEC:2002 – 7 –
2) AC method
The peak off-state current (I ) is measured at the specified peak off-state voltage
DRM
with the half-wave-rectified a.c. voltage with commercial a.c. line frequency, which is
applied between the output terminals in off-state.
The peak off-state current (I ) is measured again with inverted polarity of the output
DRM
terminals (T1, T2) by applying the reverse voltage/current between the terminals.

Voltage
Specified peak
off-state voltage
Time
Current
Peak off-state
current
Time
IEC  691/02
Figure 27 – Waveforms of the peak off-state voltage and current
d) Requirements
1) The measurement method of the peak off-state current uses two forced-voltage
polarities (T1→T2 and T2→T1).
2) In the case of the d.c. method, the slew rate of the applied d.c. voltage between the
output terminals (T1, T2) should not exceed the critical rate of rise of the off-state
voltage (dV/dt).
In the case of the a.c. method, the rate of change (dV/dt) of the applied sine-wave-
voltage between the output terminals (T1, T2) should not exceed the critical rate of
rise of the off-state voltage (dV/dt).
e) Specified conditions
1) Peak off-state voltage (V )
DRM
2) Ambient temperature (T ).
amb
5.9 Peak on-state voltage (V )
TM
a) Purpose
To measure the peak on-state voltage between the output terminals in on-state under
specified conditions, when the specified on-state current is applied between the output
terminals in on-state.
60747-5-3 Amend. 1  IEC:2002 – 9 –
b) Circuit diagram
DC method
I
R F
S1
R
S2
T1
A
A
V
T2
IEC  692/02
AC method
I
F
D
R
2 R
S1
S2
T1
A
R D
R
T2
OSC OSC
IEC  693/02
R , R Current limiting resistors
S1 S2
R Current detecting resistor
R Resistor to prevent the phototriac from being off-voltage
D Diode for decreasing d.c. current part in power line
NOTE R should be selected approximately to adjust the voltage between the terminals, which is caused by the
leakage current through D , to nearly zero volt.
Figure 28 – Measurement circuit for peak on-state voltage
c) Measurement procedure
1) DC method
The specified input forward current (I ) is applied to turn on the output, after which
F
the specified on-state current is applied between the output terminals.
The voltage between the output terminals (peak on-state voltage (V )) is measured.
TM
The voltage between the output terminals is measured again with inverted polarity of
the output terminals (T1, T2) by applying the reverse voltage/current between the
terminals.
A constant current source may be used instead of a constant voltage source on the
input side.
2) AC method
The specified input forward current (I ) is applied to turn on the output, after which
F
the half-wave-rectified a.c. voltage with commercial a.c. line frequency is applied
between the output terminals. The voltage between the output terminals (peak on-
state voltage (V )) is measured at the specified peak on-state current.
TM
60747-5-3 Amend. 1  IEC:2002 – 11 –
The voltage between the output terminals is measured again with inverted polarity of
the output terminals (T1, T2) by applying the reverse voltage/current between the
terminals.
A constant current source may be used instead of a constant voltage source on the
input side.
Voltage
Peak on-state
voltage
Time
Current
Specified peak on-state
current
Time
IEC  694/02
Figure 29 – Waveforms of the peak on-state voltage and current
d) Requirements
The measurement method of the peak on-state voltage uses two forced-voltage polarities
(T1→T2 and T2→T1).
e) Specified conditions
1) Peak on-state current (I )
TM
2) Input forward current (I )
F
3) Ambient temperature (T ).
amb
5.10 DC off-state current (I )
BD
a) Purpose
To measure the leakage current between the output terminals in off-state under specified
conditions.
b) Circuit diagram
R
S
T1
A
V
T2
IEC  695/02
R Current limiting resistor
S
Figure 30 – Measurement circuit for d.c. off-state current

60747-5-3 Amend. 1  IEC:2002 – 13 –
c) Measurement procedure
The specified d.c. off-state voltage is applied between the output terminals in off-state.
The leakage current is measured again with inverted polarity of the output terminals (T1,
T2) by applying the reverse voltage/current between the terminals.
d) Requirements
1) The measurement method of th
...