EN 62047-12:2011

Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures

IEC 62047-12:2011 specifies a method for bending fatigue testing using resonant vibration of microscale mechanical structures of MEMS (micro-electromechanical systems) and micromachines. This standard applies to vibrating structures ranging in size from 10 μm to 1 000 μm in the plane direction and from 1 μm to 100 μm in thickness, and test materials measuring under 1 mm in length, under 1 mm in width, and between 0,1 μm and 10 μm in thickness. The main structural materials for MEMS, micromachine, etc. have special features, such as typical dimensions of a few microns, material fabrication by deposition, and test piece fabrication by means of non-mechanical machining, including photolithography. The MEMS structures often have higher fundamental resonant frequency and higher strength than macro structures. To evaluate and assure the lifetime of MEMS structures, a fatigue testing method with ultra high cycles (up to 1012) loadings needs to be established. The object of the test method is to evaluate the mechanical fatigue properties of microscale materials in a short time by applying high load and high cyclic frequency bending stress using resonant vibration.

Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 12: Verfahren zur Prüfung der Biege-Ermüdungsfestigkeit von Dünnschichtwerkstoffen unter Verwendung der Resonanzschwingungen bei MEMS-Strukturen

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 12: Méthode d'essai de fatigue en flexion des matériaux en couche mince utilisant les vibrations à la résonance des structures à systèmes microélectromécaniques (MEMS)

La CEI 62047-12:2011 spécifie une méthode d'essai de fatigue en flexion utilisant les vibrations à la résonance des structures mécaniques à très petite échelle des systèmes microélectromécaniques (MEMS), et des micromachines. La présente norme s'applique aux structures vibrantes dont la taille est dans la gamme allant de 10 μm à 1 000 μm dans le plan et de 1 μm à 100 μm d'épaisseur, ainsi qu'à des matériaux d'essai mesurant moins de 1 mm de longueur, moins de 1 mm de largeur et entre 0,1 μm et 10 μm d'épaisseur. Les matériaux de construction principaux pour les systèmes microélectromécaniques, les micromachines, etc., comportent des caractéristiques spéciales telles que des dimensions typiques de l'ordre de quelques microns, la fabrication des matériaux par dépôt et la fabrication d'éprouvettes d'essai par usinage non mécanique, par exemple la photolithographie. Les structures à systèmes micro-électromécaniques présentent souvent une fréquence de résonance fondamentale et une résistance supérieures à celles des macro-structures. Pour évaluer et garantir la durée de vie des structures à systèmes microélectromécaniques, on doit établir une méthode d'essai de fatigue avec des cycles de charge très élevés (jusqu'à 1012). Le but de la méthode d'essai est d'évaluer les propriétés de fatigue mécanique des matériaux à très petite échelle sur une courte durée en appliquant une contrainte de flexion à charge élevée et à haute fréquence cyclique en utilisant des vibrations à la résonance.

Polprevodniški elementi - Mikroelektromehanski elementi - 12. del: Metoda za preskušanje upogibne utrujenosti tankoplastnih materialov z uporabo resonančnih tresljajev struktur mikroelektromehanskih sistemov (MEMS)

Ta del IEC 62047 določa metodo za preskušanje upogibne utrujenosti z uporabo resonančnih tresljajev mikromehanskih struktur MEMS (mikroelektromehanskih sistemov) in mikrostrojev. Ta standard velja za vibrirajoče strukture v razponu velikosti od 10 μm do 1000 μm v smeri ravnine in debeline od 1 μm do 1000 μm ter za preskusne materiale, ki merijo manj kot 1 mm v dolžino, manj kot 1 mm v širino in med 0,1 μm in 10 μm v debelino. Glavni strukturni materiali za MEMS, mikrostroje itd. imajo posebne lastnosti, kot so značilna velikost nekaj mikronov, izdelava materiala z usedanjem in preskušanci, narejeni z nemehansko strojno obdelavo, vključno s fotolitografijo. Strukture MEMS imajo pogosto višjo osnovno resonančno frekvenco in višjo trdnost kot makrostrukture. Za ocenjevanje in zagotavljanje življenjske dobe struktur MEMS je treba vzpostaviti preskusno metodo utrujenosti z ultravisokimi cikli (do 1012) obremenitve. Cilj preskusne metode je v kratkem času oceniti lastnosti mehanske utrujenosti materialov na mikroravni z uporabo visokih obremenitev in visokih cikličnih frekvenc upogibne napetosti z uporabo resonančne vibracije.

General Information

• Status: Published
• Publication Date: 20-Oct-2011
• Withdrawal Date: 17-Oct-2014
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: CLC/SR 47F - CLC_SR_47F
• Drafting Committee: IEC/SC 47F - IEC_SC_47F
• Current Stage: 6060 - Document made available - Publishing
• Start Date: 21-Oct-2011
• Completion Date: 21-Oct-2011
• Ref Project: SIST EN 62047-12:2012 - Semiconductor devices - Microelectromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures

Standards Content (Sample)

2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 12: Verfahren zur Prüfung der Biege-Ermüdungsfestigkeit von Dünnschichtwerkstoffen unter Verwendung der Resonanzschwingungen bei MEMS-StrukturenDispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 12: Méthode d'essai de fatigue en flexion des matériaux en couche mince utilisant les vibrations à la résonance des structures à systèmes microélectromécaniques (MEMS)Semiconductor devices - Microelectromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures31.080.01Polprevodniški elementi (naprave) na splošnoSemiconductor devices in generalICS:Ta slovenski standard je istoveten z:EN 62047-12:2011SIST EN 62047-12:2012en01-januar-2012SIST EN 62047-12:2012SLOVENSKI
STANDARD



SIST EN 62047-12:2012



EUROPEAN STANDARD EN 62047-12 NORME EUROPÉENNE
EUROPÄISCHE NORM October 2011
CENELEC European Committee for Electrotechnical Standardization Comité Européen de Normalisation Electrotechnique Europäisches Komitee für Elektrotechnische Normung
Management Centre: Avenue Marnix 17, B - 1000 Brussels
© 2011 CENELEC -
All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62047-12:2011 E
ICS 31.080.99
English version
Semiconductor devices -
Micro-electromechanical devices -
Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures (IEC 62047-12:2011)
Dispositifs à semiconducteurs -
Dispositifs microélectromécaniques -
Partie 12: Méthode d'essai de fatigue en flexion des matériaux en couche mince utilisant les vibrations à la résonance des structures à systèmes microélectromécaniques (MEMS) (CEI 62047-12:2011)
Halbleiterbauelemente -
Bauelemente der Mikrosystemtechnik -
Teil 12: Verfahren zur Prüfung der Biege-Ermüdungsfestigkeit von Dünnschichtwerkstoffen unter Verwendung der Resonanzschwingungen bei MEMS-Strukturen (IEC 62047-12:2011)
This European Standard was approved by CENELEC on 2011-10-18. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland and the United Kingdom.
SIST EN 62047-12:2012



EN 62047-12:2011 - 2 - Foreword The text of document 47F/80/FDIS, future edition 1 of IEC 62047-12, prepared by SC 47F, "Micro-electromechanical systems", of IEC TC 47, "Semiconductor device", was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as EN 62047-12:2011.
The following dates are fixed: • latest date by which the document has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2012-07-18 • latest date by which the national standards conflicting with the document have to be withdrawn (dow) 2014-10-18
Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such patent rights. Endorsement notice The text of the International Standard IEC 62047-12:2011 was approved by CENELEC as a European Standard without any modification. In the official version, for Bibliography, the following note has to be added for the standard indicated: IEC 62047-2:2006 NOTE
Harmonized as EN 62047-2:2006 (not modified).
SIST EN 62047-12:2012



- 3 - EN 62047-12:2011 Annex ZA
(normative) Normative references to international publications with their corresponding European publications
The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies.
NOTE
When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies.
Publication Year Title EN/HD Year
IEC 62047-3 2006 Semiconductor
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