EN IEC 60747-16-9:2024

Semiconductor devices - Part 16-9: Microwave integrated circuits - Phase shifters

IEC 60747-16-9:2024 specifies the terminology, essential ratings, and characteristics, and measuring methods of microwave integrated circuit phase shifters.

Halbleiterbauelemente - Teil 16-9: Integrierte Mikrowellenschaltungen - Phasenschieber

Dispositifs à semiconducteurs - Partie 16-9: Circuits intégrés hyperfréquences - Déphaseurs

L’IEC 60747-16-8:2024 spécifie la terminologie, les valeurs assignées et caractéristiques essentielles, et les méthodes de mesure des déphaseurs des circuits intégrés hyperfréquences.

Polprevodniški elementi - 16-9. del: Mikrovalovna integrirana vezja - Fazni menjalniki (IEC 60747-16-9:2024)

General Information

• Status: Published
• Publication Date: 14-Nov-2024
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: CLC/TC 47X - Semiconductor devices and trusted chips
• Current Stage: 6060 - Document made available - Publishing
• Start Date: 15-Nov-2024
• Due Date: 07-Apr-2023
• Completion Date: 15-Nov-2024
• Ref Project: SIST EN IEC 60747-16-9:2025 - Semiconductor devices - Part 16-9: Microwave integrated circuits - Phase shifters (IEC 60747-16-9:2024)

Standards Content (Sample)

SLOVENSKI STANDARD
oSIST prEN IEC 60747-16-9:2023
01-maj-2023
Polprevodniški elementi - 16-9. del: Mikrovalovna integrirana vezja - Fazni
menjalniki
Semiconductor devices - Part 16-9: Microwave integrated circuits - Phase shifters
Ta slovenski standard je istoveten z: prEN IEC 60747-16-9:2023
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
31.200 Integrirana vezja, Integrated circuits.
mikroelektronika Microelectronics
oSIST prEN IEC 60747-16-9:2023 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

oSIST prEN IEC 60747-16-9:2023

oSIST prEN IEC 60747-16-9:2023
47E/803/CDV
COMMITTEE DRAFT FOR VOTE (CDV)
PROJECT NUMBER:
IEC 60747-16-9 ED1
DATE OF CIRCULATION: CLOSING DATE FOR VOTING:
2023-03-03 2023-05-26
SUPERSEDES DOCUMENTS:
47E/768/CD, 47E/782A/CC
IEC SC 47E : DISCRETE SEMICONDUCTOR DEVICES
SECRETARIAT: SECRETARY:
Korea, Republic of Mr Hojun Ryu
OF INTEREST TO THE FOLLOWING COMMITTEES: PROPOSED HORIZONTAL STANDARD:

Other TC/SCs are requested to indicate their interest, if
any, in this CDV to the secretary.
FUNCTIONS CONCERNED:
EMC ENVIRONMENT QUALITY ASSURANCE SAFETY
SUBMITTED FOR CENELEC PARALLEL VOTING NOT SUBMITTED FOR CENELEC PARALLEL VOTING
Attention IEC-CENELEC parallel voting
The attention of IEC National Committees, members of
CENELEC, is drawn to the fact that this Committee Draft
for Vote (CDV) is submitted for parallel voting.
The CENELEC members are invited to vote through the
CENELEC online voting system.
This document is still under study and subject to change. It should not be used for reference purposes.
Recipients of this document are invited to submit, with their comments, notification of
• any relevant patent rights of which they are aware and to provide supporting documentation ,
• any relevant “in some countries” clauses to be included should this proposal proceed. Recipients are
reminded that the enquiry stage is the final stage for submitting "in some countries" clauses. See
AC/22/2007.
TITLE:
Semiconductor devices - Part 16-9: Microwave integrated circuits - Phase shifters

PROPOSED STABILITY DATE: 2028
NOTE FROM TC/SC OFFICERS:
All Observations of Secretariat were agreed in the WG2 online meetings held on 2022-05-18 and 2022-
10-27
download this electronic file, to make a copy and to print out the content for the sole purpose of preparing National
Committee positions. You may not copy or "mirror" the file or printed version of the document, or any part of it,
for any other purpose without permission in writing from IEC.

oSIST prEN IEC 60747-16-9:2023
IEC CDV 60747-16-9 © IEC 2023 2 47E/803/CDV

1 CONTENTS
2 FOREWORD . 5
3 1 Scope . 7
4 2 Normative references . 7
5 3 Terms and definitions. 7
6 4 Essential ratings and characteristics . 9
7 4.1 General requirements . 9
8 4.1.1 Circuit identification and types . 9
9 4.1.2 General function description . 10
10 4.1.3 Manufacturing technology . 10
11 4.1.4 Package identification . 10
12 4.2 Application description . 10
13 4.2.1 Conformance to system and/or interface information . 10
14 4.2.2 Overall block diagram . 10
15 4.2.3 Reference data . 10
16 4.2.4 Electrical compatibility . 10
17 4.2.5 Associated devices . 10
18 4.3 Specification of the function . 10
19 4.3.1 Detailed block diagram – Functional blocks . 10
20 4.3.2 Identification and function of terminals . 11
21 4.3.3 Function description . 11
22 4.4 Limiting values (absolute maximum rating system) . 12
23 4.4.1 Requirements . 12
24 4.4.2 Electrical limiting values . 12
25 4.4.3 Temperatures . 13
26 4.5 Operating conditions (within the specified operating temperature range) . 13
27 4.6 Electrical characteristics . 14
28 4.7 Mechanical and environmental ratings, characteristics and data . 14
29 4.8 Additional information . 14
30 5 Measuring methods . 15
31 5.1 General . 15
32 5.1.1 General precautions . 15
33 5.1.2 Characteristic impedance . 15
34 5.1.3 Handling precautions . 15
35 5.1.4 Types . 15
36 5.2 Transmission loss (L ) and insertion loss(L ) . 15
trans ins
37 5.2.1 Purpose . 15
38 5.2.2 Measuring methods . 15
39 5.3 Phase shift value (S ) . 18
ph
40 5.3.1 Purpose . 18
41 5.3.2 Circuit diagram . 18
42 5.3.3 Principle of measurement . 18
43 5.3.4 Circuit description and requirements . 19
44 5.3.5 Precautions to be observed . 19
45 5.3.6 Measurement procedure . 19
46 5.3.7 Specified conditions. 19
47 5.4 Phase shift range (R ) . 19
ph
48 5.4.1 Purpose . 19

oSIST prEN IEC 60747-16-9:2023
IEC CDV 60747-16-9 © IEC 2023 3 47E/803/CDV

49 5.4.2 Circuit diagram . 19
50 5.4.3 Principle of measurement . 19
51 5.4.4 Circuit description and requirements . 20
52 5.4.5 Precautions to be observed . 20
53 5.4.6 Measurement procedure . 20
54 5.4.7 Specified conditions. 20
55 5.5 Phase shift accuracy (S ) . 20
acc
56 5.5.1 Purpose . 20
57 5.5.2 Circuit diagram . 20
58 5.5.3 Principle of measurement . 20
59 5.5.4 Circuit description and requirements . 20
60 5.5.5 Precautions to be observed . 21
61 5.5.6 Measurement procedure . 21
62 5.5.7 Specified conditions. 21
63 5.6 Phase shift accuracy root mean square (S ) . 21
acc(RMS)
64 5.6.1 Purpose . 21
65 5.6.2 Circuit diagram . 21
66 5.6.3 Principle of measurement . 21
67 5.6.4 Circuit description and requirements . 21
68 5.6.5 Precautions to be observed . 22
69 5.6.6 Measurement procedure . 22
70 5.6.7 Specified conditions. 22
71 5.7 Input return loss(L ) . 22
ret(in)
72 5.7.1 Purpose . 22
73 5.7.2 Measuring methods . 22
74 5.8 Output return loss (L ) . 25
ret(out)
75 5.8.1 Purpose . 25
76 5.8.2 Measuring methods . 25
77 5.9 Amplitude Flatness (F ) . 27
amp
78 5.9.1 Purpose . 27
79 5.9.2 Measuring methods . 27
80 5.10 Transmission loss ripple (L ) . 28
rip
81 5.10.1 Purpose . 28
82 5.10.2 Measuring methods . 28
83 5.11 Input power at 1 dB compression (P ) . 30
i(1dB)
84 5.11.1 Purpose . 30
85 5.11.2 Circuit diagram . 30
86 5.11.3 Principle of measurement . 30
87 5.11.4 Circuit description and requirements . 30
88 5.11.5 Precaution to be observed . 30
89 5.11.6 Measurement procedure . 30
90 5.11.7 Specified conditions. 31
91 5.12 Intermodulation distortion (two-tone)( P /P ) . 31
n 1
92 5.12.1 Purpose . 31
93 5.12.2 Circuit diagram . 31
94 5.12.3 Principle of measurement . 31
95 5.12.4 Circuit description and requirements . 32
96 5.12.5 Precaution to be observed . 32

oSIST prEN IEC 60747-16-9:2023
IEC CDV 60747-16-9 © IEC 2023 4 47E/803/CDV

97 5.12.6 Measurement procedure . 32
98 5.12.7 Specified conditions.
...