EN 62047-14:2012

Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials

IEC 62047-14:2012 describes definitions and procedures for measuring the forming limit of metallic film materials with a thickness range from 0,5 μm to 300 μm. The metallic film materials described herein are typically used in electric components, MEMS and micro-devices. When metallic film materials used in MEMS (see 2.1.2 of IEC 62047-1:2005) are fabricated by a forming process such as imprinting, it is necessary to predict the material failure in order to increase the reliability of the components. Through this prediction, the effectiveness of manufacturing MEMS components by a forming process can also be improved, because the period of developing a product can be reduced and manufacturing costs can thus be decreased. This standard presents one of the prediction methods for material failure in imprinting process.

Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 14: Verfahren zur Ermittlung der Grenzformänderung metallischer Dünnschichtwerkstoffe

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 14: Méthode de mesure des limites de formage des matériaux à couche métallique

La CEI 62047-14:2012 fournit les définitions et décrit les procédures de mesure de la limite de formage des matériaux à couche métallique d'une épaisseur comprise entre 0,5 μm et 300 μm. Les matériaux à couche métallique décrits ci-après sont généralement utilisés dans les composants électriques, les MEMS et les microdispositifs. Lorsque des matériaux à couche métallique utilisés dans les composants MEMS (voir le 2.1.2 de la CEI 62047-1:2005) sont fabriqués par un procédé de formage tel que l'empreinte, il est nécessaire de prévoir la défaillance des matériaux afin d'accroître la fiabilité des composants. Par le biais de cette prévision, l'efficacité de fabrication des composants MEMS par le procédé de formage peut également être améliorée, car la période d'élaboration d'un produit donné peut être réduite et le coût de fabrication peut ainsi en être diminué. La présente norme présente l'une des méthodes de prévision concernant la défaillance de matériaux lors du procédé d'empreinte.

Polprevodniški elementi - Mikroelektromehanski elementi - 14. del: Metoda merjenja omejitev preoblikovanja kovinoplastnih materialov

Ta del standarda IEC 62047 opisuje opredelitve in postopke za merjenje omejitev preoblikovanja kovinoplastnih materialov z razponom debeline od 0,5 μm do 300 μm. Kovinoplastni materiali, opisani v tem standardu, se običajno uporabljajo v električnih sestavnih delih, napravah MEMS in mikronapravah. Kadar so kovinoplastni materiali, uporabljeni v napravi MEMS (glejte točko 2.1.2 standarda IEC 62047-1:2005), proizvedeni s procesom preoblikovanja, kot je vtiskanje, je treba napovedati odpoved materiala, da se poveča zanesljivost sestavnih delov. S pomočjo tega napovedovanja je mogoče izboljšati tudi učinkovitost proizvodnje sestavnih delov MEMS s procesom preoblikovanja, ker je mogoče obdobje razvoja proizvoda zmanjšati ter posledično znižati proizvodne stroške. Ta standard predstavlja eno od metod napovedovanja za odpoved materiala med procesom vtiskanja.

General Information

• Status: Published
• Publication Date: 05-Apr-2012
• Withdrawal Date: 02-Apr-2015
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: CLC/TC 47X - Semiconductor devices and trusted chips
• Drafting Committee: IEC/SC 47F - IEC_SC_47F
• Current Stage: 6060 - Document made available - Publishing
• Start Date: 06-Apr-2012
• Completion Date: 06-Apr-2012
• Ref Project: SIST EN 62047-14:2012 - Semiconductor devices - Microelectromechanical devices - Part 14: Forming limit measuring method of metallic film materials

Overview

EN 62047-14:2012 (IEC 62047-14) - published by CLC/CENELEC - defines a standardized method to measure the forming limit of metallic film materials used in semiconductor and micro-electromechanical systems (MEMS). The standard covers metallic films with thicknesses from 0.5 µm to 300 µm and specifies equipment, specimen preparation, test procedures and analysis used to construct a forming limit diagram (FLD). The FLD predicts the strain conditions at which thin metallic films will fracture during forming processes such as imprinting.

Key topics and technical requirements

• Scope and purpose: Procedures for predicting material failure during forming/imprinting to improve MEMS reliability and reduce development cost.
• Thickness range: Applies to metallic film materials 0.5 µm–300 µm.
• Test method: Stretching a specimen using a hemispherical punch in a micro‑press until fracture to determine major and minor strains.
• Forming limit diagram (FLD): Constructed by plotting measured major and minor strains from deformed grid patterns.
• Equipment recommendations:
  • Micro‑press with hemispherical punch; punch surface conventionally hard‑chrome coated (hexavalent chromium) to achieve surface roughness < 0.8 µm (RMS).
  • Punch speed: quasi‑static condition recommended; less than 20 µm/s to avoid dynamic inertia effects.
  • Lubrication: graphite or similar to reduce friction between punch and specimen.
• Specimen marking and strain measurement:
  • Grid patterns (circular or square) for localized and overall deformation measurement.
  • Grid marking methods described (photographic, inkjet).
  • Strain measurement using high‑resolution digital camera or optical devices; Annexes describe gripping (ring die, adhesive) and pixel‑based image analysis.
• Test report: Required details for reproducibility and comparison.

Practical applications and who uses this standard

EN 62047-14 is essential for:

• MEMS designers and process engineers validating forming/imprint processes.
• Semiconductor manufacturers assessing thin-film formability and reliability.
• Materials scientists and metallurgists characterizing thin-film mechanical limits.
• Test labs and metrology facilities performing FLD testing and strain analysis.

Using this standard helps predict failure modes in formed microstructures, optimize forming parameters, shorten product development cycles, and reduce manufacturing costs.

Related standards

• IEC 62047-1:2005 - Terms and definitions for micro‑electromechanical devices (normative reference used by EN 62047-14).

Keywords: EN 62047-14, IEC 62047-14, forming limit, forming limit diagram, FLD, metallic film, thin film formability, MEMS, micro-electromechanical devices, micro-press testing, strain measurement.

Standards Content (Sample)

SLOVENSKI STANDARD
01-junij-2012
Polprevodniški elementi - Mikroelektromehanski elementi - 14. del: Metoda
merjenja omejitev preoblikovanja kovinoplastnih materialov
Semiconductor devices - Microelectromechanical devices - Part 14: Forming limit
measuring method of metallic film materials
Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 14: Verfahren zur
Ermittlung der Grenzformänderung metallischer Dünnschichtwerkstoffe
Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 14: Méthode
de mesure des limites de formage des matériaux à couche métallique
Ta slovenski standard je istoveten z: EN 62047-14:2012
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

EUROPEAN STANDARD
EN 62047-14
NORME EUROPÉENNE
April 2012
EUROPÄISCHE NORM
ICS 31.080.99
English version
Semiconductor devices -
Micro-electromechanical devices -
Part 14: Forming limit measuring method of metallic film materials
(IEC 62047-14:2012)
Dispositifs à semiconducteurs -  Halbleiterbauelemente -
Dispositifs microélectromécaniques - Bauelemente der Mikrosystemtechnik -
Partie 14: Méthode de mesure des limites Teil 14: Verfahren zur Ermittlung der
de formage des matériaux à couche Grenzformänderung metallischer
métallique Dünnschichtwerkstoffe
(CEI 62047-14:2012) (IEC 62047-14:2012)

This European Standard was approved by CENELEC on 2012-04-03. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the CEN-CENELEC Management Centre or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the CEN-CENELEC Management Centre has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus,
the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy,
Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia,
Spain, Sweden, Switzerland, Turkey and the United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Management Centre: Avenue Marnix 17, B - 1000 Brussels

© 2012 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62047-14:2012 E
Foreword
The text of document 47F/108/FDIS, future edition 1 of IEC 62047-14, prepared by SC 47F, "Micro-
electromechanical systems", of IEC TC 47, "Semiconductor devices" was submitted to the IEC-CENELEC
parallel vote and approved by CENELEC as EN 62047-14:2012.

The following dates are fixed:
(dop) 2013-01-03
• latest date by which the document has
to be implemented at national level by
publication of an identical national
standard or by endorsement
(dow) 2015-04-03
• latest date by which the national

standards conflicting with the
document have to be withdrawn
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such patent
rights.
Endorsement notice
The text of the International Standard IEC 62047-14:2012 was approved by CENELEC as a European
Standard without any modification.

- 3 - EN 62047-14:2012
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications

The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.

NOTE  When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD
applies.
Publication Year Title EN/HD Year

IEC 62047-1 2005 Semiconductor devices - Micro- EN 62047-1 2006
electromechanical devices -
Part 1: Terms and definitions
IEC 62047-14 ®
Edition 1.0 2012-02
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Micro-electromechanical devices –

Part 14: Forming limit measuring method of metallic film materials

Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –

Partie 14: Méthode de mesure des limites de formage des matériaux à couche

métallique
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CODE PRIX Q
ICS 31.080.99 ISBN 978-2-88912-938-6

– 2 – 62047-14 © IEC:2012
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms, definitions and symbols . 5
3.1 Terms and definitions . 5
3.2 Symbols . 6
4 Testing method . 6
4.1 General . 6
4.2 Equipment . 6
4.3 Specimen . 7
5 Test procedure and analysis . 8
5.1 Test procedure . 8
5.2 Data analysis . 9
6 Test report. 10
Annex A (informative) Principles of the forming limit diagram . 11
Annex B (informative) Grid marking method . 13
Annex C (informative) Gripping method . 15
Annex D (informative) Strain measuring method . 17

Figure 1 – Equipment and tools for forming limit tests . 7
Figure 2 – Rectangular specimens with six kinds of aspect ratio . 8
Figure 3 – Strain for forming limit measurement . 9
Figure 4 – Construct the forming limit diagram by plotting the major and minor strains . 9
Figure A.1 – Forming limit diagram . 11
Figure A.2 – Hemispherical punch for forming limit measurement . 11
Figure A.3 – Grid for forming limit measurement . 12
Figure A.4 – Loading path of the specimen with various aspect ratios . 12
Figure B.1 – Procedure of a photographic grid marking method . 13
Figure B.2 – Procedure for an inkjet grid marking method . 14
Figure C.1 – Gripping of the specimen using a ring shaped die . 15
Figure C.2 – Gripping of the specimen using adhesive bonding . 16
Figure D.1 – Set up for strain measurement using digital camera . 17
Figure D.2 – Example of pixel converting image of deformed specimen . 17

Table 1 – List of letter symbols . 6

62047-14 © IEC:2012 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 14: Forming limit measuring method
of metallic film materials
FOREWORD
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62047-14 has been prepared by subcommittee 47F: Micro-
electromechanical systems, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47F/108/FDIS 47F/118/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.

– 4 – 62047-14 © IEC:2012
A list of all parts of IEC 62047 series, published under the general title Semiconductor
devices – Micro-electromechanical devices, can be found on the IEC website.
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
62047-14 © IEC:2012 – 5 –
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 14: Forming limit measuring method
of metallic film materials
1 Scope
This part of IEC 62047 describes definitions and procedures for measuring the forming limit of
metallic film materials with a thickness range from 0,5 µm to 300 µm. The metallic film
materials described herein are typically used in electric components, MEMS and micro-
devices.
When metallic film materials used in MEMS (see 2.1.2 of IEC 62047-1:2005) are fabricated by
a forming process such as imprinting, it is necessary to predict the material failure in order to
increase the reliability of the components. Through this prediction, the effectiveness of
manufacturing MEMS components by a forming process can also be improved, because the
period of developing a product can be reduced and manufacturing costs can thus be
decreased. This standard presents one of the prediction methods for material failure in
imprinting process.
2 Normative references
The following documents, in whole or in part, are normatively referenced in this document and
are indispensable for its application. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC 62047-1:2005, Semiconductor devices – Micro-electromechanical devices – Part 1:
Terms and definitions
3 Terms, definitions and symbols
3.1 Terms and definitions
For the purposes of this document, the terms and definitions given in IEC 62047-1 and the
following apply.
3.1.1
circular grid
grid used for measuring the localized deformation of the specimens within the circle
3.1.2
grid patterns
pattern marked on the surface of the testing material permitt
...