EN 62374:2007
(Main)Semiconductor devices - Time Dependent Dielectric Breakdown (TDDB) test for gate dielectric films
Semiconductor devices - Time Dependent Dielectric Breakdown (TDDB) test for gate dielectric films
Provides a test method of Time Dependent Dielectric Breakdown (TDDB) for gate dielectric films on semiconductor devices and a product lifetime estimation method of TDDB failure
Halbleiterbauelemente - Prüfung des zeitabhängigen dielektrischen Durchbruchs (TDDB) für dielektrische Gate-Schichten
Dispositifs à semiconductors - Essai de rupture diélectrique en fonction du temps (TDDB) pour films diélectriques de grille
Cette norme décrit une méthode d essai de la rupture diélectrique en fonction du temps (TDDB) pour films diélectriques de grille des dispositifs à semiconducteurs et une méthode d estimation de la durée de vie de produit en présence d unedéfaillance de type TDDB.
Polprevodniški elementi - Preskus dielektrične plasti vrat s časovno odvisnim dielektričnim prebojem (TDDB) (IEC 62374:2007)
General Information
Standards Content (Sample)
SLOVENSKI STANDARD
01-januar-2008
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Semiconductor devices - Time Dependent Dielectric Breakdown (TDDB) test for gate
dielectric films
Halbleiterbauelemente - Prüfung des zeitabhängigen dielektrischen Durchbruchs (TDDB)
für dielektrische Gate-Schichten
Dispositifs à semiconductors - Essai de rupture diélectrique en fonction du temps
(TDDB) pour films diélectriques de grille
Ta slovenski standard je istoveten z: EN 62374:2007
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
EUROPEAN STANDARD
EN 62374
NORME EUROPÉENNE
October 2007
EUROPÄISCHE NORM
ICS 31.080
English version
Semiconductor devices -
Time Dependent Dielectric Breakdown (TDDB) test
for gate dielectric films
(IEC 62374:2007)
Dispositifs à semiconductors - Halbleiterbauelemente -
Essai de rupture diélectrique Prüfung des zeitabhängigen
en fonction du temps (TDDB) dielektrischen Durchbruchs (TDDB)
pour films diélectriques de grille für dielektrische Gate-Schichten
(CEI 62374:2007) (IEC 62374:2007)
This European Standard was approved by CENELEC on 2007-10-01. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Cyprus, the
Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
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Sweden, Switzerland and the United Kingdom.
CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
Central Secretariat: rue de Stassart 35, B - 1050 Brussels
© 2007 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62374:2007 E
Foreword
The text of document 47/1894/FDIS, future edition 1 of IEC 62374, prepared by IEC TC 47,
Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by
CENELEC as EN 62374 on 2007-10-01.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2008-07-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2010-10-01
__________
Endorsement notice
The text of the International Standard IEC 62374:2007 was approved by CENELEC as a European
Standard without any modification.
__________
NORME CEI
INTERNATIONALE
IEC
INTERNATIONAL
Première édition
STANDARD
First edition
2007-03
Dispositifs à semiconducteurs –
Essai de rupture diélectrique en fonction du
temps (TDDB) pour films diélectriques de grille
Semiconductor devices –
Time dependent dielectric breakdown
(TDDB) test for gate dielectric films
© IEC 2007 Droits de reproduction réservés ⎯ Copyright - all rights reserved
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62374 © IEC:2007 – 3 –
CONTENTS
FOREWORD.5
1 Scope.9
2 Terms and definitions .9
3 Test equipment.13
4 Test samples.13
4.1 General .13
4.2 Test structure: capacitor structure .13
4.3 Area .15
5 Procedures.15
5.1 General .15
5.2 Pre-test .19
5.3 Test conditions .19
5.4 Criteria .19
6 Lifetime estimation .25
6.1 General .25
6.2 Acceleration model.25
6.3 A procedure for a lifetime estimation .29
7 Lifetime dependence on gate oxide area .35
Annex A (informative) Supplementary determining test condition and data analysis .37
Bibliography.43
Figure 1 – Test flow diagram of constant voltage stress method .17
Figure 2– Typical example of implementing the variance method for detecting
breakdown .23
Figure 3 – Timing diagram showing the implementation of the stress interruption
technique for monitoring the change in SILC (t shall be <1 % of the anticipated t ) .25
init bd
Figure 4– Graph fitted Weibull/Lognormal distribution (Weibull is recommended).31
Figure 5 – Estimate procedure of electric acceleration factor .33
Figure 6 – Estimation procedure of activation energy.33
Figure A.1 – Voltage dependence of lifetime for TDDB.37
Figure A.2 – Each component plotted as a function of V .41
OX
62374 © IEC:2007 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES −
TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB) TEST
FOR GATE DIELECTRIC FILMS
FOREWORD
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International Standard IEC 62374 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47/1894/FDIS 47/1896/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
62374 © IEC:2007 – 7 –
The committee has decided that the contents of this publication will remain unchanged until
the maintenance result date indicated on the IEC web site under "http://webstore.iec.ch" in
the data related to the specific publication. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
62374 © IEC:2007 – 9 –
SEMICONDUCTOR DEVICES −
TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB) TEST
FOR GATE DIELECTRIC FILMS
1 Scope
This International Standard provides a test method of Time Dependent Dielectric Breakdown
(TDDB) for gate dielectric films on semiconductor devices and a product lifetime estimation
method of TDDB failure.
2 Terms and definitions
For the purposes of this document, the following terms and definitions apply:
2.1
oxide electric field (strength)
E
ox
defined as oxide voltage divided by oxide thickness.
NOTE
E = V /t (1)
ox ox ox
where
E (MV/cm) is the oxide electric field;
ox
V is the oxide voltage;
ox
t is the oxide thickness.
ox
t must be determined by a consistent, documented method (physical measurement method
ox
by Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM) or
Capacitance-Voltage (CV) analysis). It is important to point out that the applied voltage is not
necessarily the voltage across the oxide. Ultra-thin oxides exhibit quantum confinement
effects and gate electrode depletion effects effectively reducing the voltage across the oxide.
The method of determining t or a reference to the documented standard must be included in
ox
the data report.
2.2
gate oxide leakage current
I
g
the leakage current flowing in the gate terminal of an insulated-gate field-effect transistor
NOTE The letter symbol “I ” is in common use for the gate leakage current.
g
2.3
initial gate oxide leakage current
I
g0
leakage current flowing in the gate terminal of an oxide insulated-gate when a use voltage is
applied before stress voltage or stress electric field is applied
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