EN 62047-26:2016

Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures

IEC 62047-26:2016 specifies descriptions of trench structure and needle structure in a micrometer scale. In addition, it provides examples of measurement for the geometry of both structures. For trench structures, this standard applies to structures with a depth of 1 µm to 100 µm; walls and trenches with respective widths of 5 µm to 150 µm; and aspect ratio of 0,006 7 to 20. For needle structures, the standard applies to structures with three or four faces with a height, horizontal width and vertical width of 2 µm or larger, and with dimensions that fit inside a cube with sides of 100 µm. This standard is applicable to the structural design of MEMS and geometrical evaluation after MEMS processes.

Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 26: Beschreibung und Messverfahren für Mikro-Rillen und Nadelstrukturen

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 26: Description et méthodes de mesure pour structures de microtranchées et de microaiguille

L'IEC 62047-26:2016 spécifie des descriptions de structures de tranchées et de structures d'aiguille à l'échelle micrométrique. En outre, elle donne des exemples de mesures de la géométrie des deux structures. Pour les structures de tranchées, la présente norme s'applique à des structures de profondeur comprise entre 1 µm et 100 µm, avec des parois et des tranchées de largeur comprise entre 5 µm et 150 µm et avec un rapport hauteur/largeur compris entre 0,006 7 et 20. Pour les structures d'aiguille, la norme s'applique à des structures à trois ou quatre faces dont la hauteur, la largeur horizontale et la largeur verticale sont supérieures ou égales à 2 µm, et dont les dimensions permettent de placer chaque structure dans un cube de 100 µm de côté. La présente norme s'applique à la conception structurelle de procédés MEMS et à leur appréciation géométrique.

Polprevodniški elementi - Mikroelektromehanski elementi - 26. del: Opis in merilne metode za mikrokanalske in iglaste strukture

Ta del standarda IEC 62047 določa opise kanalske in iglaste strukture v velikosti mikrometra. Poleg tega vsebuje primere merjenja za geometrijo obeh struktur. Pri kanalskih strukturah se ta standard uporablja za strukture z globino od 1 μm do 100 μm; zidove in kanale s širino od 5 μm do 150 μm; in razmerje med višino in širino od 0,0067 do 20. Pri iglastih strukturah se ta standard uporablja za strukture s tremi ali štirimi ploskvami z višino, vodoravno širino in navpično širino vsaj 2 μm in z dimenzijami, ki se prilegajo notranjosti kocke s stranicami 100 μm.
Ta standard se uporablja za strukturne zasnove MEMS in geometrično vrednotenje po postopkih MEMS.

General Information

• Status: Published
• Publication Date: 21-Apr-2016
• Withdrawal Date: 10-Feb-2019
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: CLC/TC 47X - Semiconductor devices and trusted chips
• Drafting Committee: IEC/SC 47F - IEC_SC_47F
• Current Stage: 6060 - Document made available - Publishing
• Start Date: 22-Apr-2016
• Completion Date: 22-Apr-2016
• Ref Project: SIST EN 62047-26:2016 - Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures

Standards Content (Sample)

SLOVENSKI STANDARD
01-julij-2016
Polprevodniški elementi - Mikroelektromehanski elementi - 26. del: Opis in merilne
metode za mikrokanalske in iglaste strukture
Semiconductor devices - Micro-electromechanical devices - Part 26: Description and
measurement methods for micro trench and needle structures
Ta slovenski standard je istoveten z: EN 62047-26:2016
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

EUROPEAN STANDARD EN 62047-26

NORME EUROPÉENNE
EUROPÄISCHE NORM
April 2016
ICS 31.080.99
English Version
Semiconductor devices - Micro-electromechanical devices -
Part 26: Description and measurement methods for micro trench
and needle structures
(IEC 62047-26:2016)
Dispositifs à semiconducteurs - Dispositifs Halbleiterbauelemente - Bauelemente der
microélectromécaniques - Partie 26: Description et Mikrosystemtechnik - Teil 26: Beschreibung und
méthodes de mesure pour structures de microtranchées et Messverfahren für Mikro-Rillen und Nadelstrukturen
de microaiguille (IEC 62047-26:2016)
(IEC 62047-26:2016)
This European Standard was approved by CENELEC on 2016-02-11. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Turkey and the United Kingdom.

European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels
© 2016 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN 62047-26:2016 E
European foreword
The text of document 47F/233/FDIS, future edition 1 of IEC 62047-26, prepared by SC 47F "Micro-
electromechanical systems", of IEC/TC 47 "Semiconductor devices" was submitted to the IEC-
CENELEC parallel vote and approved by CENELEC as EN 62047-26:2016.
The following dates are fixed:
(dop) 2016-11-11
• latest date by which the document has to be implemented at
national level by publication of an identical national
standard or by endorsement
(dow) 2019-02-11
• latest date by which the national standards conflicting with
the document have to be withdrawn

Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such
patent rights.
Endorsement notice
The text of the International Standard IEC 62047-26:2016 was approved by CENELEC as a European
Standard without any modification.
In the official version, for Bibliography, the following note has to be added for the standard indicated :
ISO 3274:1996 NOTE Harmonized as EN ISO 3274:1997 (not modified).

IEC 62047-26 ®
Edition 1.0 2016-01
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –

Part 26: Description and measurement methods for micro trench and needle

structures
Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –

Partie 26: Description et méthodes de mesure pour structures de

microtranchées et de microaiguille

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.99 ISBN 978-2-8322-3122-7

– 2 – IEC 62047-26:2016 © IEC 2016
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Description of trench structures in a micrometer scale . 7
4.1 General . 7
4.2 Symbols and designations . 7
4.3 Description . 9
5 Description of needle structures in a micrometer scale . 9
5.1 General . 9
5.2 Symbols and designations . 9
5.3 Description . 10
6 Measurement method . 10
Annex A (informative) Examples of measurement for trench and needle structures in
a micrometer scale . 11
A.1 General . 11
A.2 Measurement for depth of trench . 11
A.2.1 Field emission type scanning electron microscopy . 11
A.2.2 Coherence scanning interferometer (CSI) . 12
A.2.3 Stylus surface profiler . 14
A.2.4 Confocal laser scanning microscopy . 16
A.2.5 Atomic force microscopy . 17
A.3 Measurement for width of wall and trench at the upper surface of trench . 18
A.3.1 Field emission type scanning electron microscopy . 18
A.3.2 Coherence scanning interferometer . 19
A.3.3 Stylus surface profiler . 19
A.3.4 Confocal laser scanning microscopy . 19
A.3.5 Optical microscopy . 20
A.4 Measurement for side wall angle of trench by field emission type scanning
electron microscopy . 20
A.4.1 Principle of measurement . 20
A.4.2 Preparation of sample . 21
A.4.3 Procedure of measurement . 21
A.4.4 Measurable range . 21
A.5 Measurement for wall and trench width at the bottom of trench by field
emission type scanning ele microscopy . 21
A.5.1 Principle of measurement . 21
A.5.2 Preparation of sample . 21
A.5.3 Procedure of measurement . 21
A.5.4 Measurable range . 21
A.6 Measurement for geometry of needle . 21
A.6.1 Field emission type scanning electron microscopy . 21
A.6.2 Atomic force microscopy . 23
Annex B (informative)  Uncertainty in dimensional measurement . 25
B.1 General . 25
B.2 Basic concepts . 25

IEC 62047-26:2016 © IEC 2016 – 3 –
B.3 Example of evaluating uncertainty of the average depth of trench . 25
B.3.1 Sample and measured data for evaluating uncertainty . 25
B.3.2 Source of uncertainty . 26
B.3.3 Type A evaluation of standard uncertainty . 26
B.3.4 Type B evaluation of standard uncertainty . 26
B.3.5 Combined standard uncertainty . 26
B.3.6 Expanded uncertainty and result . 26
B.3.7 Budget table . 26
Bibliography . 28

Figure 1 – Schematic of example for trench structure in a micrometer scale and its
cross section . 7
Figure 2 – Cross section of trench structure in a micrometer scale . 8
Figure 3 – Cross section of trench structure in a micrometer scale fabricated by a
deep-reactive ion etching process with repeated deposition and etching of silicon . 8
Figure 4 – Schematic of typical needle structures formed of three and four faces . 9
Figure 5 – Front, side and top views of typical needle structures. 10
Figure A.1 – FE-SEM image of trench structure with 5 µm-wide wall and 5 µm-wide
trench . 12
Figure A.2 – Schematic of CSI microscope comprising an equal-light-path
interferometer . 13
Figure A.3 – Measurability for depth of trench structure with a depth of D and a width
of W using a stylus surface profiler . 16
Tu
Figure A.4 – Relationship between shape of AFM probe tip and trench structure . 18
Figure A.5 – Front, side and top views of typical needle structures tilted to the back
side with 30° . 23
Figure A.6 – Relationship between shapes of AFM probe tip and needle structure . 24

Table 1 – Symbols and designations of trench structure in a micrometer scale . 8
Table 2 – Symbols and designations of needle structure in a micrometer scale . 10
Table A.1 – Example of measured data of trench depth . 12
Table A.2 – CSI magnification (objective lens/ imaging lens) for measurement of all
trench . 14
Table B.1 – Example of measured data of trench depth . 25
Table B.2 – Estimation of uncertainty in measurement . 27

– 4 – IEC 62047-26:2016 © IEC 2016
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 26: Description and measurement methods for
micro trench and needle structures

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committee
...