EN 62047-18:2013
(Main)Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
IEC 62047-18:2013 specifies the method for bend testing of thin film materials with a length and width under 1 mm and a thickness in the range between 0,1 micrometre and 10 micrometre. This International Standard specifies the bend testing and test piece shape for micro-sized smooth cantilever type test pieces, which enables a guarantee of accuracy corresponding to the special features.
Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 18: Biegeprüfverfahren für Dünnschichtwerkstoffe
Dispositifs à semiconducteurs - Dispositif microélectromécaniques - Partie 18: Méthodes d’essai de flexion des matériaux en couche mince
La CEI 62047-18:2013 spécifie la méthode d'essai de flexion des matériaux en couche mince de longueur et largeur inférieures à 1 mm et d'épaisseur comprise entre 0,1 micrometre et 10 micrometre. La présente Norme Internationale spécifie les essais de flexion et la forme des éprouvettes d'essai pour des éprouvettes d'essai de type en porte-à-faux lisses microminiaturisés, qui garantissent une précision correspondant aux caractéristiques spéciales.
Polprevodniški elementi - Mikroelektromehanski elementi - 18. del: Metode za upogibno preskušanje tankoplastnih materialov (IEC 62047-18:2013)
Ta del standarda IEC 62047 določa upogibno preskušanje tankoplastnih materialov z dolžino in širino, manjšo od 1 mm, ter debelino med 0,1 in 10 μm. Tankoplastni materiali se uporabljajo kot glavni konstrukcijski materiali za mikroelektromehanske sisteme (s skrajšano oznako MEMS v tem dokumentu) in mikrostroje. Glavni konstrukcijski materiali za MEMS, mikrostroje itd. imajo posebne lastnosti, kot so velikost nekaj mikrometrov, izdelava materialov z nalaganjem, s fotolitografijo in/ali z nemehansko obdelanim preskusnim kosom. Ta mednarodni standard določa upogibno preskušanje in obliko gladkih konzolnih preskusnih kosov mikro velikosti, ki zagotavlja natančno skladnost s posebnimi lastnostmi.
General Information
Standards Content (Sample)
SLOVENSKI STANDARD
01-maj-2014
Polprevodniški elementi - Mikroelektromehanski elementi - 18. del: Metode za
upogibno preskušanje tankoplastnih materialov (IEC 62047-18:2013)
Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing
methods of thin film materials
/
Dispositifs à semiconducteurs - Dispositif microélectromécaniques - Partie 18: Méthodes
d’essai de flexion des matériaux en couche mince
Ta slovenski standard je istoveten z: EN 62047-18:2013
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
EUROPEAN STANDARD
EN 62047-18
NORME EUROPÉENNE
September 2013
EUROPÄISCHE NORM
ICS 31.080.99
English version
Semiconductor devices -
Micro-electromechanical devices -
Part 18: Bend testing methods of thin film materials
(IEC 62047-18:2013)
Dispositifs à semiconducteurs - Halbleiterbauelemente -
Dispositif microélectromécaniques - Bauelemente der Mikrosystemtechnik -
Partie 18: Méthodes d’essai de flexion des Teil 18: Biegeprüfverfahren für
matériaux en couche mince Dünnschichtwerkstoffe
(CEI 62047-18:2013) (IEC 62047-18:2013)
This European Standard was approved by CENELEC on 2013-08-21. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the CEN-CENELEC Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the CEN-CENELEC Management Centre has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus,
the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany,
Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland,
Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom.
CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Avenue Marnix 17, B - 1000 Brussels
© 2013 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62047-18:2013 E
Foreword
The text of document 47F/155/FDIS, future edition 1 of IEC 62047-18, prepared by SC 47F
“Microelectromechanical systems” of IEC/TC 47 “Semiconductor devices" was submitted to the
IEC-CENELEC parallel vote and approved by CENELEC as EN 62047-18:2013.
The following dates are fixed:
(dop) 2014-05-21
• latest date by which the document has to be
implemented at national level by
publication of an identical national
standard or by endorsement
• latest date by which the national (dow) 2016-08-21
standards conflicting with the
document have to be withdrawn
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such
patent rights.
Endorsement notice
The text of the International Standard IEC 62047-18:2013 was approved by CENELEC as a European
Standard without any modification.
- 3 - EN 62047-18:2013
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.
NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD
applies.
Publication Year Title EN/HD Year
IEC 62047-6 2009 Semiconductor devices - Micro- EN 62047-6 2010
electromechanical devices -
Part 6: Axial fatigue testing methods
of thin film materials
IEC 62047-18 ®
Edition 1.0 2013-07
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 18: Bend testing methods of thin film materials
Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –
Partie 18: Méthodes d’essai de flexion des matériaux en couche mince
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CODE PRIX M
ICS 31.080.99 ISBN 978-2-8322-0982-0
– 2 – 62047-18 © IEC:2013
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Symbols and designations . 6
4 Test piece . 6
4.1 Design of test piece . 6
4.2 Preparation of test piece . 7
4.3 Test piece width and thickness . 7
4.4 Storage prior to testing . 7
5 Testing method . 7
5.1 General . 7
5.2 Method for mounting of test piece . 9
5.3 Method for loading. 9
5.4 Speed of testing . 9
5.5 Displacement measurement . 9
5.6 Test environment . 9
5.7 Data analysis . 9
5.8 Material for test pieces . 10
6 Test report . 10
Annex A (informative) Precautions for the test piece/substrate interface . 11
Annex B (informative) Precautions necessary for the force displacement relationship . 12
Figure 1 – Schematically shown test piece with substrate . 6
Figure 2 – Measurement method . 8
Figure A.1 – Finishing angle of substrate contact area with test piece . 11
Figure B.1 – Cantilever type bend test piece of metallic glass in accordance with
IEC 62047-18. 12
Figure B.2 – Typical example of relationship between force and displacement . 13
Table 1 – Symbols and designation of test piece . 6
62047-18 © IEC:2013 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 18: Bend testing methods of thin film materials
FOREWORD
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indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62047-18 has been prepared by subcommittee 47F: Micro-
electromechanical systems, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47F/155/FDIS 47F/162/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC 62047 series, published under the general title Semiconductor
devices – Micro-electromechanical devices, can be found on the IEC website.
– 4 – 62047-18 © IEC:2013
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct
understanding of its contents. Users should therefore print this document using a
colour printer.
62047-18 © IEC:2013 – 5 –
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 18: Bend testing methods of thin film materials
1 Scope
This part of IEC 62047 specifies the method for bend testing of thin film materials with a
length and width under 1 mm and a thickness in the range between 0,1 µm and 10 µm. Thin
films are used a
...
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