EN 62047-25:2016
(Main)Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
IEC 62047-25:2016 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology.
Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 25: Siliziumbasierte MEMS-Herstellungstechnologie - Messverfahren zur Zug-Druck- und Scherfestigkeit gebondeter Flächen im Mikrometerbereich
Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 25: Technologie de fabrication de MEMS à base de silicium - Méthode de mesure de la résistance à la traction-compression et au cisaillement d'une micro zone de brasure
L'IEC 62047-25:2016 spécifie la méthode d'essai in situ pour mesurer la résistance de brasure d'une microzone de brasure fabriquée par des technologies de micro-usinage utilisées dans un système microélectromécanique (MEMS) à base de silicium. Le présent document s'applique à la mesure in situ de la résistance à la traction-compression et de la résistance au cisaillement d'une microzone de brasure fabriquée par un processus microélectronique et d'autres technologies de micro-usinage.
Polprevodniški elementi - Mikroelektromehanski elementi - 25. del: Tehnologija proizvodnje MEMS na siliciju - Metoda za merjenje potezno-potisne in strižne trdnosti mikro spojnih mest (IEC 62047-25:2016)
Ta del standarda IEC 62047 določa preskusno metodo na mestu uporabe za merjenje spojne trdnosti mikro spojnega mesta, ki je izdelano z mikromehansko tehnologijo proizvodnje MEMS na siliciju.
Ta dokument se uporablja za merjenje potezno-potisne in strižne trdnosti spojnih mest, ki so izdelana v procesu mikroelektronske in druge mikromehanske tehnologije.
Mikro sidro, pritrjeno na substrat skozi mikro spojno mesto, zagotavlja mehansko podporo premičnih funkcijskih komponent zaznavanja/aktiviranja v napravah MEMS. S spreminjanjem velikosti naprav je spojna moč zaradi napak, onesnaženja in toplotnega neujemanja na spojnem mestu vse manjša. Ta standard določa preskusno metodo na mestu uporabe za potezno-potisno in strižno trdnost na podlagi strukturirane tehnike.
Ta dokument ne zahteva uporabe zapletenih instrumentov (na primer mikroskopije s sondo za skeniranje in nanoindenterjev) in posebne priprave preskusnega primerka.
Ker je preskusno strukturo v tem standardu mogoče vključiti v izdelavo naprave kot standardni vzorec odkrivanja, je ta dokument lahko most, prek katerega oblikovalec iz proizvodnega obrata dobi kvantitativno referenco.
General Information
Standards Content (Sample)
SLOVENSKI STANDARD
01-marec-2017
Polprevodniški elementi - Mikroelektromehanski elementi - 25. del: Tehnologija
proizvodnje MEMS na siliciju - Metoda za merjenje potezno-potisne in strižne
trdnosti mikro spojnih mest (IEC 62047-25:2016)
Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon-based
MEMS fabrication technology - Measurement method of pull-press and shearing strength
of micro bonding area (IEC 62047-25:2016)
Ta slovenski standard je istoveten z: EN 62047-25:2016
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
EUROPEAN STANDARD EN 62047-25
NORME EUROPÉENNE
EUROPÄISCHE NORM
November 2016
ICS 31.080.99
English Version
Semiconductor devices - Micro-electromechanical devices -
Part 25: Silicon based MEMS fabrication technology -
Measurement method of pull-press and shearing strength of
micro bonding area
(IEC 62047-25:2016)
Dispositifs à semiconducteurs - Dispositifs Halbleiterbauelemente - Bauelemente der
microélectromécaniques - Partie 25: Technologie de Mikrosystemtechnik - Teil 25: Siliziumbasierte MEMS-
fabrication de MEMS à base de silicium - Méthode de Herstellungstechnologie - Messverfahren zur Zug-Druck-
mesure de la résistance à la traction-compression et au und Scherfestigkeit gebondeter Flächen im
cisaillement d'une micro zone de brasure Mikrometerbereich
(IEC 62047-25:2016) (IEC 62047-25:2016)
This European Standard was approved by CENELEC on 2016-10-03. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Turkey and the United Kingdom.
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels
© 2016 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN 62047-25:2016 E
European foreword
The text of document 47F/249/FDIS, future edition 1 of IEC 62047-25, prepared by SC 47F
“Microelectromechanical systems” of IEC/TC 47 “Semiconductor devices" was submitted to the IEC-
CENELEC parallel vote and approved by CENELEC as EN 62047-25:2016.
The following dates are fixed:
(dop) 2017-07-03
• latest date by which the document has to be
implemented at national level by
publication of an identical national
standard or by endorsement
• latest date by which the national (dow) 2019-10-03
standards conflicting with the
document have to be withdrawn
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such
patent rights.
Endorsement notice
The text of the International Standard IEC 62047-25:2016 was approved by CENELEC as a European
Standard without any modification.
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.
NOTE 1 When an International Publication has been modified by common modifications, indicated by (mod), the relevant
EN/HD applies.
NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this annex is available here:
www.cenelec.eu
Publication Year Title EN/HD Year
IEC 62047-1 - Semiconductor devices - Micro- EN 62047-1 -
electromechanical devices -
Part 1: Terms and definitions
ISO 10012 - Measurement management systems - EN ISO 10012 -
Requirements for measurement processes
and measuring equipment
IEC 62047-25 ®
Edition 1.0 2016-08
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 25: Silicon based MEMS fabrication technology – Measurement method of
pull-press and shearing strength of micro bonding area
Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –
Partie 25: Technologie de fabrication de MEMS à base de silicium – Méthode de
mesure de la résistance à la traction-compression et au cisaillement d'une
micro zone de brasure
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.99 ISBN 978-2-8322-3609-3
– 2 – IEC 62047-25:2016 © IEC 2016
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references. 6
3 Terms and definitions . 6
4 Requirements . 7
4.1 Testing structure design requirements . 7
4.2 Testing structure fabrication requirements . 9
4.3 Testing environment requirements . 9
5 Testing method . 9
5.1 General . 9
5.2 Pull-press testing method . 9
5.2.1 Imposing the loading force . 9
5.2.2 Pull-press testing method operation process . 9
5.2.3 Pull-press testing method result process . 10
5.3 Shearing testing method . 10
5.3.1 Shearing testing method operation process . 10
5.3.2 Shearing testing method result process . 12
Annex A (informative) Dimensions for testing structure and tensile/compressive
strength . 13
A.1 Dimensions for testing structure . 13
A.2 Tensile strength and compressive strength . 13
Annex B (informative) Pull-press testing method example . 21
B.1 Dimensions for testing structure . 21
B.2 Tensile strength and compressive strength . 21
Figure 1 − Pull-press testing structure . 7
Figure 2 − Shearing testing structure . 8
Figure 3 − Pull-press testing method operation process . 10
Figure 4 − Shearing testing method operation process . 11
Table 1 – Dimensions for shearing testing structure . 12
Table A.1 – Dimensions for testing structure . 13
Table A.2 – Tensile strength and compressive strength (bonding area: 10 µm × 10 µm) . 13
Table A.3 – Tensile strength and compressive strength (bonding area: 20 µm × 20 µm) . 14
Table A.4 – Tensile strength and compressive strength (bonding area: 30 µm × 30 µm) . 14
Table A.5 – Tensile strength and compressive strength (bonding area: 40 µm × 40 µm) . 15
Table A.6 – Tensile strength and compressive strength (bonding area: 50 µm × 50 µm) . 15
Table A.7 – Tensile strength and compressive strength (bonding area: 60 µm × 60 µm) . 15
Table A.8 – Tensile strength and compressive strength (bonding area: 70 µm × 70 µm) . 16
Table A.9 – Tensile strength and compressive strength (bonding area: 80 µm × 80 µm) . 16
Table A.10 – Tensile strength and compressive strength (bonding area:
90 µm × 90 µm) . 17
Table A.11 – Tensile strength and compressive strength (bonding area:
100 µm × 100 µm) . 17
IEC 62047-25:2016 © IEC 2016 – 3 –
Table A.12 – Tensile strength and compressive strength (bonding area:
110 µm × 110 µm) . 18
Table A.13 – Tensile strength and compressive strength (bonding area:
120 µm × 120 µm) . 18
Table A.14 – Tensile strength and compressive strength (bonding area:
130 µm × 130 µm) . 19
Table A.15 – Tensile strength and compressive strength (bonding area:
140 µm × 140 µm) . 19
Table A.16 – Tensile strength and compressive strength (bonding area:
150 µm × 150 µm) . 20
Table B.1 – Dimensions for testing structure . 21
Table B.2 – Tensile strength and compressive strength (bonding area:
110 µm × 110 µm) . 21
– 4 – IEC 62047-25:2016 © IEC 2016
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 25: Silicon based MEMS fabrication technology – Measurement
method of pull-press and shearing strength of micro bonding area
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
in the subject dealt with may participate in this preparatory work. International, governmental and non-
governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely
with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications
...
Questions, Comments and Discussion
Ask us and Technical Secretary will try to provide an answer. You can facilitate discussion about the standard in here.