EN 62047-25:2016
(Main)Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
IEC 62047-25:2016 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology.
Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 25: Siliziumbasierte MEMS-Herstellungstechnologie - Messverfahren zur Zug-Druck- und Scherfestigkeit gebondeter Flächen im Mikrometerbereich
Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 25: Technologie de fabrication de MEMS à base de silicium - Méthode de mesure de la résistance à la traction-compression et au cisaillement d'une micro zone de brasure
L'IEC 62047-25:2016 spécifie la méthode d'essai in situ pour mesurer la résistance de brasure d'une microzone de brasure fabriquée par des technologies de micro-usinage utilisées dans un système microélectromécanique (MEMS) à base de silicium. Le présent document s'applique à la mesure in situ de la résistance à la traction-compression et de la résistance au cisaillement d'une microzone de brasure fabriquée par un processus microélectronique et d'autres technologies de micro-usinage.
Polprevodniški elementi - Mikroelektromehanski elementi - 25. del: Tehnologija proizvodnje MEMS na siliciju - Metoda za merjenje potezno-potisne in strižne trdnosti mikro spojnih mest (IEC 62047-25:2016)
Ta del standarda IEC 62047 določa preskusno metodo na mestu uporabe za merjenje spojne trdnosti mikro spojnega mesta, ki je izdelano z mikromehansko tehnologijo proizvodnje MEMS na siliciju.
Ta dokument se uporablja za merjenje potezno-potisne in strižne trdnosti spojnih mest, ki so izdelana v procesu mikroelektronske in druge mikromehanske tehnologije.
Mikro sidro, pritrjeno na substrat skozi mikro spojno mesto, zagotavlja mehansko podporo premičnih funkcijskih komponent zaznavanja/aktiviranja v napravah MEMS. S spreminjanjem velikosti naprav je spojna moč zaradi napak, onesnaženja in toplotnega neujemanja na spojnem mestu vse manjša. Ta standard določa preskusno metodo na mestu uporabe za potezno-potisno in strižno trdnost na podlagi strukturirane tehnike.
Ta dokument ne zahteva uporabe zapletenih instrumentov (na primer mikroskopije s sondo za skeniranje in nanoindenterjev) in posebne priprave preskusnega primerka.
Ker je preskusno strukturo v tem standardu mogoče vključiti v izdelavo naprave kot standardni vzorec odkrivanja, je ta dokument lahko most, prek katerega oblikovalec iz proizvodnega obrata dobi kvantitativno referenco.
General Information
Standards Content (Sample)
SLOVENSKI STANDARD
SIST EN 62047-25:2017
01-marec-2017
Polprevodniški elementi - Mikroelektromehanski elementi - 25. del: Tehnologija
proizvodnje MEMS na siliciju - Metoda za merjenje potezno-potisne in strižne
trdnosti mikro spojnih mest (IEC 62047-25:2016)
Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon-based
MEMS fabrication technology - Measurement method of pull-press and shearing strength
of micro bonding area (IEC 62047-25:2016)
Ta slovenski standard je istoveten z: EN 62047-25:2016
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
SIST EN 62047-25:2017 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
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SIST EN 62047-25:2017
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SIST EN 62047-25:2017
EUROPEAN STANDARD EN 62047-25
NORME EUROPÉENNE
EUROPÄISCHE NORM
November 2016
ICS 31.080.99
English Version
Semiconductor devices - Micro-electromechanical devices -
Part 25: Silicon based MEMS fabrication technology -
Measurement method of pull-press and shearing strength of
micro bonding area
(IEC 62047-25:2016)
Dispositifs à semiconducteurs - Dispositifs Halbleiterbauelemente - Bauelemente der
microélectromécaniques - Partie 25: Technologie de Mikrosystemtechnik - Teil 25: Siliziumbasierte MEMS-
fabrication de MEMS à base de silicium - Méthode de Herstellungstechnologie - Messverfahren zur Zug-Druck-
mesure de la résistance à la traction-compression et au und Scherfestigkeit gebondeter Flächen im
cisaillement d'une micro zone de brasure Mikrometerbereich
(IEC 62047-25:2016) (IEC 62047-25:2016)
This European Standard was approved by CENELEC on 2016-10-03. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Turkey and the United Kingdom.
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels
© 2016 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN 62047-25:2016 E
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SIST EN 62047-25:2017
EN 62047-25:2016
European foreword
The text of document 47F/249/FDIS, future edition 1 of IEC 62047-25, prepared by SC 47F
“Microelectromechanical systems” of IEC/TC 47 “Semiconductor devices" was submitted to the IEC-
CENELEC parallel vote and approved by CENELEC as EN 62047-25:2016.
The following dates are fixed:
(dop) 2017-07-03
• latest date by which the document has to be
implemented at national level by
publication of an identical national
standard or by endorsement
• latest date by which the national (dow) 2019-10-03
standards conflicting with the
document have to be withdrawn
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such
patent rights.
Endorsement notice
The text of the International Standard IEC 62047-25:2016 was approved by CENELEC as a European
Standard without any modification.
2
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SIST EN 62047-25:2017
EN 62047-25:2016
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.
NOTE 1 When an International Publication has been modified by common modifications, indicated by (mo
...
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