EN 62132-4:2006

Integrated circuits - Measurement of electromagnetic immunity 150 kHz to 1 GHz - Part 4: Direct RF power injection method

Describes a method to measure the immunity of integrated circuits (IC) in the presence of conducted RF disturbances, e.g. resulting from radiated RF disturbances. This method guarantees a high degree of repeatability and correlation of immunity measurements. This standard establishes a common base for the evaluation of semiconductor devices used in equipment functioning in an environment subject to unwanted radio frequency electromagnetic waves.

Integrierte Schaltungen - Messung der elektromagnetischen Störfestigkeit im Frequenzbereich von 150 kHz bis 1 GHz - Teil 4: Verfahren direkter Einspeisung der HF-Leistung

Circuits intégrés - Mesure de l'immunité électromagnétique 150 kHz à 1 GHz - Partie 4: Méthode d'injection directe de puissance RF

Cette partie de la CEI 62132 d Décrit une méthode de mesure de l'immunité des circuits intégrés (CI) en présence de perturbations RF conduites, comme par exemple celles résultant de perturbations RF rayonnées. Cette méthode garantit un degré élevé de répétabilité et une corrélation des mesures d'immunité. Cette norme établit une base commune pour l'évaluation des dispositifs à semiconducteurs utilisés dans les matériels fonctionnant dans un environnement soumis à des ondes électromagnétiques à radiofréquences intempestives.

Integrirana vezja – Merjenje elektromagnetne odpornosti pri frekvencah od 150 kHz do 1 GHz – 4. del: Metoda z neposredno priključitvijo RF energije (IEC 62132-4:2006)

General Information

• Status: Published
• Publication Date: 18-May-2006
• Withdrawal Date: 31-Jan-2009
• ICS: 31.200 - Integrated circuits. Microelectronics
• Technical Committee: CLC/TC 47X - Semiconductor devices and trusted chips
• Drafting Committee: IEC/SC 47A - IEC_SC_47A
• Parallel Committee: IEC/SC 47A - IEC_SC_47A
• Current Stage: 6060 - Document made available - Publishing
• Start Date: 19-May-2006
• Completion Date: 19-May-2006
• Directive: 2004/108/EC - Directive 2004/108/EC of the European Parliament and of the Council of 15 December 2004 on the approximation of the laws of the Member States relating to electromagnetic compatibility and repealing Directive 89/336/EEC
• Directive: 2004/108/EU - DIRECTIVE 2004/108/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 15 December 2004 on the approximation of the laws of the Member States relating to electromagnetic compatibility and repealing Directive 89/336/EEC
• Directive: 2014/30/EU - Directive 2014/30/EU of the European Parliament and of the Council of 26 February 2014 on the harmonisation of the laws of the Member States relating to electromagnetic compatibility (recast)
• Directive: 89/336/EEC - Electromagnetic compatibility (EMC)
• Ref Project: SIST EN 62132-4:2006 - Integrated circuits - Measurement of electromagnetic immunity 150 kHz to 1 GHz -- Part 4: Direct RF power injection method

Overview

EN 62132-4:2006 (IEC 62132-4:2006) defines the direct RF power injection method for measuring the electromagnetic immunity of integrated circuits (ICs) in the 150 kHz to 1 GHz band. The standard describes a repeatable, well‑defined test technique to evaluate how ICs behave when exposed to conducted RF disturbances (for example, disturbances that result from nearby radiated RF fields). It establishes a common basis for assessing semiconductor devices used in equipment operating in environments with unwanted radio‑frequency electromagnetic waves.

Keywords: EN 62132-4:2006, direct RF power injection, integrated circuits, electromagnetic immunity, 150 kHz–1 GHz, IC immunity testing, EMC testing.

Key topics and requirements

• Scope and purpose: Measurement method for conducted RF immunity of ICs to ensure high repeatability and correlation of results.
• Measurement basics: Principles to avoid resonances in the test setup and to account for IC/package geometries that affect immunity.
• Injection methods: Procedures for single‑pin and multiple‑pin direct RF power injection, including differential‑mode considerations.
• Test conditions: Defined environmental and device conditions required for meaningful and repeatable measurements.
• Test equipment: Requirements and recommendations for RF sources, power meters, directional couplers and ancillary equipment.
• Test set‑up: Layout of the injection port, test circuit board design, decoupling networks and characteristics of the injection path.
• Decoupling and termination: Guidance on decoupling networks, blocking capacitors and termination methods to reproduce realistic crosstalk and loading.
• Procedure and reporting: Step‑by‑step test flow, specific test sequences, and required information for the test report to support reproducibility and traceability.

Practical applications and users

• Semiconductor manufacturers - for device qualification, design verification and specification of immunity levels.
• EMC test laboratories - to perform standardized IC immunity measurements and provide comparative data.
• Design and validation engineers - to identify vulnerability paths, guide PCB layout and decoupling strategies, and support EMI/EMC hardening.
• Automotive, industrial, consumer electronics OEMs - to evaluate ICs intended for use in RF‑noisy environments and to set supplier acceptance criteria.
• Regulatory and compliance teams - to correlate IC immunity to system‑level EMC requirements and support product approvals.

Related standards

• IEC/EN 62132‑1 (general conditions and definitions)
• IEC 61000‑4‑6 (immunity to conducted disturbances induced by RF fields)
• IEC 61967‑4 and CISPR 16‑1‑2 (related measurement apparatus and conducted emissions methods)

EN 62132-4:2006 is a practical, repeatable method for assessing IC immunity to conducted RF interference and is widely used where consistent, comparable EMC characterization of semiconductor devices is required.

Standards Content (Sample)

SLOVENSKI SIST EN 62132-4:2006

STANDARD
oct 2006
Integrirana vezja – Merjenje elektromagnetne odpornosti pri frekvencah od
150 kHz do 1 GHz – 4. del: Metoda z neposredno priključitvijo RF energije
(IEC 62132-4:2006)
Integrated circuits – Measurement of electromagnetic immunity 150 kHz to 1 GHz –
Part 4: Direct RF power injection method (IEC 62132-4:2006)
ICS 31.200; 33.100.20 Referenčna številka
©  Standard je založil in izdal Slovenski inštitut za standardizacijo. Razmnoževanje ali kopiranje celote ali delov tega dokumenta ni dovoljeno

EUROPEAN STANDARD
EN 62132-4
NORME EUROPÉENNE
May 2006
EUROPÄISCHE NORM
ICS 31.200
English version
Integrated circuits -
Measurement of electromagnetic immunity 150 kHz to 1 GHz
Part 4: Direct RF power injection method
(IEC 62132-4:2006)
Circuits intégrés -  Integrierte Schaltungen -
Mesure de l'immunité électromagnétique Messung der elektromagnetischen
150 kHz à 1 GHz Störfestigkeit im Frequenzbereich
Partie 4: Méthode d'injection directe von 150 kHz bis 1 GHz
de puissance RF Teil 4: Verfahren direkter Einspeisung
(CEI 62132-4:2006) der HF-Leistung
(IEC 62132-4:2006)
This European Standard was approved by CENELEC on 2006-02-01. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Cyprus, the Czech
Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain,
Sweden, Switzerland and the United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Central Secretariat: rue de Stassart 35, B - 1050 Brussels

© 2006 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62132-4:2006 E
Foreword
The text of document 47A/733/FDIS, future edition 1 of IEC 62132-4, prepared by SC 47A, Integrated
circuits, of IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was
approved by CENELEC as EN 62132-4 on 2006-02-01.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2006-12-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2009-02-01
Annex ZA has been added by CENELEC.
__________
Endorsement notice
The text of the International Standard IEC 62132-4:2006 was approved by CENELEC as a European
Standard without any modification.
__________
- 3 - EN 62132-4:2006
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications

The following referenced documents are indispensable for the application of this document. For dated
references, only the edition cited applies. For undated references, the latest edition of the referenced
document (including any amendments) applies.

NOTE  When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD
applies.
Publication Year Title EN/HD Year
1)
IEC 61000-4-6 Electromagnetic compatibility (EMC) - -
-
Part 4-6: Testing and measurement
techniques - Immunity to conducted
disturbances, induced by radio-frequency
fields
1) 2)
IEC 61967-4 - Integrated circuits - Measurement of EN 61967-4 2002
electromagnetic emissions, 150 kHz to 1 GHz
Part 4: Measurement of conducted emissions
- 1 ohm/150 ohm direct coupling method

IEC 62132-1 2006 Integrated circuits - Measurement of EN 62132-1 2006
electromagnetic immunity, 150 kHz to 1 GHz
Part 1: General conditions and definitions

CISPR 16-1-2 2003 Specification for radio disturbance and EN 55016-1-2 2004
immunity measuring apparatus and methods
Part 1-2: Radio disturbance and immunity
measuring apparatus - Ancillary equipment -
Conducted disturbances
1)
Undated reference.
2)
Valid edition at date of issue.

NORME CEI
INTERNATIONALE
IEC
62132-4
INTERNATIONAL
Première édition
STANDARD
First edition
2006-02
Circuits intégrés –
Mesure de l'immunité électromagnétique
150 kHz à 1 GHz –
Partie 4:
Méthode d'injection directe de puissance RF

Integrated circuits –
Measurement of electromagnetic
immunity 150 kHz to 1 GHz –
Part 4:
Direct RF power injection method

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62132-4  IEC:2006 – 3 –
CONTENTS
FOREWORD.7

1 Scope.11
2 Normative references.11
3 Terms and definitions .11
4 General .13
4.1 Measurement basics.13
4.2 Single pin direct power injection.17
4.3 Multiple pin direct power injection into pins of differential mode systems .19
5 Test conditions .19
6 Test equipment.19
6.1 General .19
6.2 RF power source .21
6.3 RF power meter and directional coupler .21
7 Test set-up .21
7.1 General .21
7.2 Power injection set-up .21
7.3 Test circuit board.23
7.4 Characteristics of the power injection set-up .25
7.5 Decoupling networks.25
8 Test procedure .27
8.1 General .27
8.2 Specific test procedure .27
9 Test report.29

Annex A (informative) Example of a specification of immunity levels e.g. for automotive
applications.31
Annex B (informative) Hints for the best installation of a test set-up with respect to RF .35
Annex C (informative) Constant peak test level explanation .47

Bibliography .49

Figure 1 – Arrangement of a direct injection test set-up .15
Figure 2 – Illustration of the principle of the single pin power injection.17
Figure 3 – Illustration of the principle of multiple pin power injection .19
Figure 4 – Example of the routing from the injection port to a pin of the DUT .23
Figure 5 – Example of a S magnitude measurement result (first resonance above 1 GHz).25
Figure 6 – Flowchart of a test procedure.29

62132-4  IEC:2006 – 5 –
Figure B.1 – Installation of a connector on the test board nearby the DUT.37
Figure B.2 – Using a shielding box placing the connector as close as possible to the
DUT (optional series resistor may be added) .37
Figure B.3 – Accessing a high pin count DUT by a large main board and an IC specific
board connected by spring contact pins .39
Figure B.4 – DC decoupling of a high current pin .39
Figure B.5 – Test set-up with mandatory blocking capacitor .41
Figure B.6 – Layout example for DUT with mandatory blocking capacitor .41
Figure B.7 – Test set-up example with the load on the test set-up.43
Figure B.8 – Example of a decoupling network for an input with high impedance.43
Figure B.9 – Termination of pins not to be tested with a typical impedance to reproduce
crosstalk currents.45
Figure B.10 – Example of power injection into two pins using the mandatory termination
of the high speed CAN bus.45

Table 1 – System and IC parameters affecting immunity.17
Table A.1 – Example of immunity level ranges.31

62132-4  IEC:2006 – 7 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
INTEGRATED CIRCUITS –
MEASUREMENT OF ELECTROMAGNETIC IMMUNITY
150 kHz TO 1 GHz –
Part 4: Direct RF power injection method

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
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2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
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3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
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4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62132-4 has been prepared by subcommittee 47A: Integrated
circuits, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47A/733/FDIS 47A/741/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.

62132-4  IEC:2006 – 9 –
IEC 62132 consists of the following parts, under the general title Integrated circuits –
Measurement of electromagnetic immunity, 150 kHz to 1 GHz:
Part 1: General conditions and definitions
Part 2: (G-) TEM cell method
Part 3: Bulk current injection (BCI) method
Part 4: Direct RF power injection method
Part 5: Workbench Faraday cage method
The committee has decided that the contents of this publication will remain unchanged until the
maintenance result date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
___________
Under consideration.
62132-4  IEC:2006 – 11 –
INTEGRATED CIRCUITS –
MEASUREMENT OF ELECTROMAGNETIC IMMUNITY
150 kHz TO 1 GHz –
Part 4: Direct RF power injection method

1 Scope
This part of IEC 62132 describes a method to measure the immunity of integrated circuits (IC)
in the presence of conducted RF disturbances, e.g. resulting from radiated RF disturbances.
This method guarantees a high degree of repeatability and correlation of immunity
measurements.
This standard establishes a common base for the evaluation of semiconductor devices used in
equipment functioning in an environment subject to unwanted radio frequency electromagnetic
waves.
2 Normative references
The following referenced documents are indispensable for the application of this document. For
dated references, only the edition cited applies. For undated references, the latest edition of
the referenced document (including any amendments) applies.
IEC 61967-4, Integrated circuits – Measurement of electromagnetic emissions, 150 kHz to
1 GHz – Part 4: Measurement of conducted emissions – 1 Ω/ 150 Ω direct coupling method
IEC 62132-1:2006, Integrated circuits – Measurement of electromagnetic immunity, 150 kHz to
1 GHz – Part 1: General conditions and definitions
IEC 61000-4-6, Electromagnetic compatibility (EMC) – Part 4-6: Testing and measurement
techniques – Immunity to conducted disturbances, induced by radio-frequency fields
CISPR 16-1-2:2003, Specification for radio disturbance and immunity measuring apparatus and
methods – Part 1-2: Radio disturbance and immunity measuring apparatus. Ancillary equipment.
Conducted disturbances
3 Terms and definitions
For the purposes of this document, the terms and definitions given in IEC 62132-1 apply.

62132-4  IEC:2006 – 13 –
4 General
4.1 Measurement basics
The minimum electromagnetic immunity level required for an IC depends on the maximum
permitted level of RF disturbance to which an electronic system can be submitted. The value of
the immunity level is dependent on system and application specific parameters. To determine
the immunity performance of an IC, a simple measurement procedure, and a measurement set-
up in which resonances are avoided, is required to guarantee a high degree of repeatability.
The following points out the base of this test.
The largest geometry found in an integrated circuit is the leadframe. The size of the leadframe
is in the range of some centimetres or smaller. The dimensions of the structures on chip are
even up to two magnitudes smaller than the dimension of the leadframe. For a frequency range
below 1 GHz, this leadframe, as well as the structures on-chip, are not regarded as efficient
antennas for the reception of unwanted RF energy. It is the cable harness and/or the traces of
a printed circuit board which constitute efficient antennas. Thus, an IC receives the unwanted
RF energy through the pins connected to the wires of such cables. Because of this, the
electromagnetic immunity of an IC can be characterized by conducted RF disturbances (i.e. RF
forward power) instead of field parameters as is usually the case in module and/or system
testing.
For module and system tests, the forward power provided to a circuit by the cable harness or
the traces on a printed circuit board (PCB) acting as antennas can be measured or estimated.
This power is considered to be a forward power delivered to the circuit, no matter whether it will
be reflected or absorbed. In fact it has been observed that many ICs are most susceptible to
the disturbances at quite high reflections. This is due to the fact that in this case either injected
RF currents or applied RF voltages reach the highest possible values. To characterize the
immunity of an IC, the forward power needed to cause malfunction is measured. The
malfunction may be classified from A to D according to the performance classes defined in
IEC 62132-1.
Figure 1 shows the principal test hardware configuration with optional automatic control by
the PC.
62132-4  IEC:2006 – 15 –
DC supply
or signal
generator
Test
Decoupling
50 Ω coax
network
PCB
Directional
coupler DC
Block
RF amplifier
RF injection
port
DUT
P
P
for
refl
RF
generator
Optional:
control PC
RF Power
meters
BUS
DUT
monitor
IEC  2649/05
Key
P forward power
for
P reflected power
refl
Figure 1 – Arrangement of a direct injection test set-up
The frequency variable RF generator provides the RF disturbance that is amplified by the
connected RF amplifier. The directional coupler and the RF power meters are used to measure
the actual forward power injected into the device under test (DUT). At the RF injection port the
RF power is delivered to the test printed circuit board (PCB). The RF amplifier is decoupled by
a DC block to avoid supplying DC into the amplifier output. The DC supply is prevented from
getting RF power by a decoupling network that has a high RF impedance on the side that is
connected to the RF injection path.
To monitor the behaviour of the DUT an oscilloscope, or other monitoring device preferably
with a pass/fail function etc., can be used. To decouple the RF signal crosstalk of the DUT
from the low frequency measurement performed by the oscilloscope, a second decoupling
network is used. The measurement equipment can be optionally controlled by a computer, if
desired.
Any function inside an IC can be affected even if it is not connected to the pin under test.
Therefore the operation mode(s) of the IC shall be chosen in a way that all functions of the IC
are used during the test.
ICs are often used in different configurations based on the application. In order to understand
the influence of each individual pin, each pin that is expected to be exposed to RF disturbance
should be tested individually. Multiple pin testing is permissible into pins of differential mode
systems.
62132-4  IEC:2006 – 17 –
The forward power needed to cause malfunction of an IC depends on several parameters, like
those shown in Table 1.
Table 1 – System and IC parameters affecting immunity
IC related parameters Module related parameters
Circuit design Protection of the pin by external components
Chip layout Operation mode of the IC
Ground/supply distribution system inside the IC Ground system
Pinning assignment and bond wire design Board layout
Package Impedance of wiring harness and load
Process technology
Circuitry connected to a pin
Knowledge of the immunity of an IC (the highest forward power that does not affect the function
of the IC) allows the user to decide if he needs external protection means and how much effort
has to be spent for external protection.
4.2 Single pin direct power injection
For highest test selectivity, the RF power injected at the RF injection port is directly applied to a
single pin of an IC (see Figure 2). A capacitor may be used as a DC block, while a resistor may
be used for current limitation. By default, the capacitor value can be chosen as 6,8 nF, as
specified in IEC 61967-4. The resistor value can be, by default, 0 Ω. Other values up to 100 Ω
can be chosen if functionally required. Chosen R and C values shall be stated in the test report.
NOTE When the series resistor is 0 Ω, each input or output of the DUT will be loaded by the 50 Ω of the RF power
injection system.
Test PCB
RF-injection
port
C R
DUT
RF power
IEC  2650/05
Figure 2 – Illustration of the principle of the single pin power injection
...