EN 62415:2010
(Main)Semiconductor devices - Constant current electromigration test
Semiconductor devices - Constant current electromigration test
IEC 62415:2010 describes a method for conventional constant current electromigration testing of metal lines, via string and contacts.
Halbleiterbauelemente - Konstantstrom-Prüfverfahren zur Elektromigration
Dispositifs à semiconducteurs - Essai d'électromigration en courant constant
La CEI 62415:2010 décrit une méthode pour des essais conventionnels d'électromigration en courant constant de lignes métalliques, de chaînes de trous de liaison et de contacts de trous de liaison.
Polprevodniški elementi - Preskušanje elektromigracije s konstantnim tokom (IEC 62415:2010)
Ta standard opisuje metodo za konvencionalno preskušanje kovinskih vodov s konstantnim tokom preko vrvice in stikov.
General Information
Standards Content (Sample)
SLOVENSKI STANDARD
01-september-2010
Polprevodniški elementi - Preskušanje elektromigracije s konstantnim tokom (IEC
62415:2010)
Semiconductor devices - Constant current electromigration test (IEC 62415:2010)
Halbleiterbauelemente - Konstantstrom-Prüfverfahren zur Elektromigration (IEC
62415:2010)
Dispositifs à semiconducteurs - Essai d'électromigration en courant constant (CEI
62415:2010)
Ta slovenski standard je istoveten z: EN 62415:2010
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
EUROPEAN STANDARD
EN 62415
NORME EUROPÉENNE
June 2010
EUROPÄISCHE NORM
ICS 31.080
English version
Semiconductor devices -
Constant current electromigration test
(IEC 62415:2010)
Dispositifs à semiconducteurs - Halbleiterbauelemente -
Essai d'électromigration en courant Konstantstrom-Prüfverfahren
constant zur Elektromigration
(CEI 62415:2010) (IEC 62415:2010)
This European Standard was approved by CENELEC on 2010-06-01. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus,
the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy,
Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia,
Spain, Sweden, Switzerland and the United Kingdom.
CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
Management Centre: Avenue Marnix 17, B - 1000 Brussels
© 2010 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62415:2010 E
Foreword
The text of document 47/2044/FDIS, future edition 1 of IEC 62415, prepared by IEC TC 47,
Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by
CENELEC as EN 62415 on 2010-06-01.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent
rights.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
(dop) 2011-03-01
national standard or by endorsement
– latest date by which the national standards conflicting
(dow) 2013-06-01
with the EN have to be withdrawn
__________
Endorsement notice
The text of the International Standard IEC 62415:2010 was approved by CENELEC as a European
Standard without any modification.
__________
IEC 62415 ®
Edition 1.0 2010-05
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Constant current electromigration test
Dispositifs à semiconducteurs – Essai d’électromigration en courant constant
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
L
CODE PRIX
ICS 31.080 ISBN 978-2-88910-949-4
– 2 – 62415 © IEC:2010
CONTENTS
FOREWORD.3
1 Scope.5
2 Symbols, terms and definitions .5
2.1 Symbols .5
2.2 Terms and definitions .5
3 Background .6
4 Sample size.6
5 Test structures .6
5.1 Lines .6
5.2 Via chains .7
5.3 Contact chains .7
6 Test conditions .7
7 Failure criteria .8
8 Data analysis.8
Bibliography.11
Figure 1 – TEG of electromigration evaluation for metal line .6
Figure 2 – TEG of electromigration evaluation for vias .7
Figure 3 – Graph fitted lognormal distribution .8
Figure 4 – Estimate procedure of current density exponent.9
Figure 5 – Estimation procedure of activation energy.10
62415 © IEC:2010 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
CONSTANT CURRENT ELECTROMIGRATION TEST
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
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agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
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Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
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4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
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between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
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6) All users should ensure that they have the latest edition of this publication.
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62415 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47/2044/FDIS 47/2054/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
– 4 – 62415 © IEC:2010
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
62415 © IEC:2010 – 5 –
SEMICONDUCTOR DEVICES –
CONSTANT CURRENT ELECTROMIGRATION TEST
1 Scope
This standard describes a method for conventional constant current electromigration testing of
metal lines, via string and contacts.
2 Symbols, terms and definitions
For the purposes of this document, the following symbols, terms and definitions apply:
2.1 Symbols
2.1.1
J
via_use
the maximum current density permitted to flow in a via of a real product
2.1.2
J
line_use
the maximum current density permitted to flow in a line of a real product
2.1.3
J
via_test
the current density in a via of a test structure during electromigration test
2.1.4
J
line_test
the current density in a line of a test structure during electromigration test
2.1.5
t(x %)
time to failure of x % of the population
NOTE The method for calculation of t (50 %) is described in Clause 8.
2.2 Terms and definitions
2.2.1
TEG
test element group. This is the test structure used for the test
2.2.2
Blech length
the line length below which electromigration time to failure increases sharply [1]
NOTE The drift of metal atoms causes stress build-up in the metal lines, which caused a back flow of atoms.
For short lines the stress gradient is higher than for long lines with the same current density. The forward flow
increases more rapidly with current density than the backflow, and consequently the Blech length is inversely
proportional to the current density. The Blech length can be determined by using a chain with different line lengths
between the vias.
___________
Figures in square brackets refer to the Bibliography.
– 6 – 62415 © IEC:2010
3 Background
The background of electromigration testing as described in this procedure is based on the
assumption that the entire electromigration failure time distribution stays intact when
accelerated. Acceleration can be described by an activation energy and a current acceleration
factor, as originally proposed by Black [2].
4 Sample size
15 samples or more are recommended for each test (each test structure, temperature and
current density). In some cases, to get a better statistical confidence of the results or to
analyze a bimodal distribution, a higher number of samples might be necessary.
5 Test structures
5.1 Lines
Electromigration characterization shall be carried out on fully back-end processed samples.
The metal line test structure in a 4-terminal (Kelvin) configuration shall be used (see Figure
1a).The line length is recommended to be at least 800 μm. The use of monitors for opens,
inter-layer shorts and optional intra-layer shorts is recommended (see Figure 1b).The line
length is determined by the constraints that short lines are not sensitive to failure and exhibit
the Blech effect [1], and too long lines require high voltages. For line lengths <200 μm the
Blech effect shall be verified.
The line width shall be process-dependent. Narrow lines carry higher current densities and
are more susceptible to electromigration failure. On the other hand, lines with width smaller
than the grain size may have longer lifetime than wider lines due to the bamboo effect [3].
Therefore, lines with the minimum design rule width or the line width that gives the shortest
life time (e.g. wide lines with width greater than the grain size, that are more representative of
the current carrying lines in the circuit) shall be used in the test. O
...
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