Test methods for the characterization of organic transistor-based ring oscillators

IEC 62860-1:2013(E) covers recommended methods and standardized reporting practices for electrical characterization of printed and organic ring oscillators. Due to the nature of printed and organic circuits, significant measurement errors can be introduced if the electrical characterization design-of-experiment is not properly addressed. This standard describes the most common sources of measurement error, particularly for high-impedance electrical measurements commonly required for printed and organic ring oscillators. This standard also gives recommended practices in order to minimize and/or characterize the effect of measurement artifacts and other sources of error encountered while measuring printed and organic ring oscillators. Keywords: electrical characterization, high-impedance printing, organic transistor, printed electronics, ring oscillator

General Information

Status
Published
Publication Date
04-Aug-2013
Current Stage
PPUB - Publication issued
Start Date
15-Nov-2013
Completion Date
05-Aug-2013
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Standard
IEC 62860-1:2013 - Test methods for the characterization of organic transistor-based ring oscillators
English language
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IEC 62860-1
Edition 1.0 2013-08

IEEE Std 1620.1
INTERNATIONAL
STANDARD
Test methods for the characterization of organic transistor-based ring
oscillators
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IEC 62860-1
Edition 1.0 2013-08
IEEE Std 1620.1™
INTERNATIONAL
STANDARD
Test methods for the characterization of organic transistor-based ring

oscillators
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
PRICE CODE
R
ICS 07.030 ISBN 978-2-8322-1015-4

– ii – IEC 62860-1:2013(E)
IEEE Std 1620.1-2006
Contents
1. Overview . 1
1.1 Scope . 1
1.2 Purpose . 1
1.3 Electrical characterization overview . 1
2. Definitions, abbreviations and acronyms . 4
2.1 Definitions . 4
2.2 Acronyms . 4
3. Standard ring oscillator characterization procedures . 5
3.1 Circuit layout . 5
3.2 Guidelines for the ring oscillator characterization process . 5
3.3 Other applicable standards . 6
3.4 Reporting data. 6
3.5 Environmental control and standards .10
Annex A (informative) Bibliography .11
Annex B (informative) IEEE List of Participants . 12

Published by IEC under license from IEEE. © 2006 IEEE. All rights reserved.

IEEE Std 1620.1-2006
TEST METHODS FOR THE CHARACTERIZATION OF ORGANIC
TRANSISTOR-BASED RING OSCILLATORS

FOREWORD
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Published by IEC under license from IEEE. © 2006 IEEE. All rights reserved.

– iv – IEC 62860-1:2013(E)
IEEE Std 1620.1-2006
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Published by IEC under license from IEEE. © 2006 IEEE. All rights reserved.

IEEE Std 1620.1-2006
IEEE Standard for Test Methods for
the Characterization of Organic
Transistor-Based Ring Oscillators
Sponsor
Microprocessor Standards Committee
of the
IEEE Computer Society
Approved 8 June 2006
IEEE-SA Standards Board
Published by IEC under license from IEEE. © 2006 IEEE. All rights reserved.

– vi – IEC 62860-1:2013(E)
IEEE Std 1620.1-2006
Abstract: Recommended methods and standardized reporting practices for electrical
characterization of printed and organic ring oscillators are covered. Due to the nature of printed
and organic circuits, significant measurement errors can be introduced if the electrical
characterization design-of-experiment is not properly addressed. This standard describes the
most common sources of measurement error, particularly for high-impedance electrical
measurements commonly required for printed and organic ring oscillators. This standard also
gives recommended practices in order to minimize and/or characterize the effect of measurement
artifacts and other sources of error encountered while measuring printed and organic ring
oscillators.
Keywords: electrical characterization, high-impedance printing, organic transistor, printed
electronics, ring oscillator
Published by IEC under license from IEEE. © 2006 IEEE. All rights reserved.

IEEE Std 1620.1-2006
IEEE Introduction
This introduction is not part of IEEE Std 1620.1-2006, IEEE Standard for Test Methods for the
Characterization of Organic Transistor-Based Ring Oscillators.

This standard covers recommended methods and standardized reporting practices for electrical
characterization of organic transistor-based ring oscillators. Due to the nature of organic transistors and
circuitry, significant measurement errors can be introduced if not properly addressed. This standard
describes the most common sources of measurement error and gives recommended practices in order to
minimize and/or characterize the effect of each.

Standard reporting practices are included in order to minimize confusion in analyzing reported data.
Disclosure of environmental conditions and design-of-experiment are included so that results can be
appropriately assessed by the research community. These reporting practices also support repeatability of
results, so that new discoveries may be confirmed more efficiently.

The practices in this standard were compiled from research and industry organizations developing organic
transistor devices, materials, circuitry, and manufacturing techniques. These practices are based on standard
operating procedures utilized in laboratories worldwide.

The development of this standard was initiated in 2004 to facilitate the evolution of organic transistor
circuitry from the laboratory into a sustainable industry. Standardized characterization methods and
reporting practices create a means of effective comparison of information and a foundation for
manufacturing readiness.
Notice to users
Errata
Errata, if any, for this and all other standards can be accessed at the following URL:
http://standards.ieee.org/reading/ieee/updates/errata/index.html. Users are encouraged to check this URL
for errata periodically.
Interpretations
Current interpretations can be accessed at the following URL:
http://standards.ieee.org/reading/ieee/interp/index.html.
Patents
Attention is called to the possibility that implementation of this standard may require use of subject matter
covered by patent rights. By publication of this standard, no position is taken with respect to the existence
or validity of any patent rights in connection therewith. The IEEE shall not be responsible for identifying
patents or patent applications for which a license may be required to implement an IEEE standard or for
conducting inquiries into the legal validity or scope of those patents that are brought to its attention.

Published by IEC under license from IEEE. © 2006 IEEE. All rights reserved.

– viii – IEC 62860-1:2013(E)
IEEE Std 1620.1-2006
Published by IEC under license from IEEE. © 2006 IEEE. All rights reserved.

IEEE Std 1620.1-2006
Test Methods for the Characterization
of Organic Transistor-Based Ring
Oscillators
1. Overview
1.1 Scope
This standard describes a method for characterizing organic electronic transistor-based ring oscillators,
including measurement techniques, methods of reporting data, and the testing conditions during
characterization.
1.2 Purpose
The purpose of this standard is to provide a method for systematically characterizing organic transistor-
based ring oscillators. This standard is intended to maximize reproducibility of published results by
providing a framework for testing organic ring oscillators, whose unique properties cause measurement
issues not typically encountered with inorganic-based circuitry. This standard stresses disclosure of the
procedures used to measure data and extract parameters so that data quality may be easily assessed. This
standard also sets guidelines for reporting data, so that information is clear and consistent throughout the
research community and industry.
1.3 Electrical characterization overview
1.3.1 Testing apparatus
Testing shall be performed using an electronic device test system with an accuracy and resolution of at least
±0.1% of the measurement values for both signal level and timing or frequency measurements. In order to
maintain the necessary accuracy, this test method requires that the instrumentation be calibrated against a
known and appropriate set of standards [e.g., National Institute of Standards and Technology (NIST)].
These calibrations may be performed by the equipment user or as a service by the equipment vendor.
Calibration is not performed against a known organic field-effect transistor (OFET), organic circuit, or
other FET-type device; the basic instrument operations (e.g., voltage, current, and resistance) are calibrated

Published by IEC under license from IEEE. © 2006 IEEE. All rights reserved.

– 2 – IEC 62860-1:2013(E)
IEEE Std 1620.1-2006
against some method traceable to a NIST (or similar internationally recognized standards organization)
physical standard. Recalibration is required according to the instrument manufacturer’s recommendations
or when the instrument is moved or when the testing conditions change significantly (temperature change
greater than 10 °C, relative humidity change greater than 30%, etc.).
1.3.2 Measurement techniques
1.3.2.1 Required measurements
Characterization of the organic ring oscillator shall include at minimum the following primary set of
measurements:
 A ring of an odd number (at least three) of inverter stages, operated at a single supply voltage,
characterizing output voltage from a single node versus time in seconds. The number of inverter
stages should be chosen to be as large as practically possible. Ideally the ring oscillator should
comprise at least seven or more stages. Shorter ring oscillators can often oscillate with signal level
not closely related to their saturation values. While this results in faster oscillation, the timing
numbers so obtained are much less useful in understanding realistic digital circuit speeds. In
addition, ring oscillators with few stages are more affected by the way in which the output voltage
is measured, and, in particular, measurement results will depend more on the capacitance with
which the node being measured is loaded by the measurement. For all ring oscillators particular
care should be taken to report the conditions of the signal measurement at the output node. In all
cases the value of the load capacitance in relation to the input capacitance of an inverter stage
should be reported.
 Both output frequency and output signal level and swing shall be reported.
 Static measurements of inverter transfer characteristics. Preferably, the inverters for static
measurements should have the same size and geometry as those used in the ring oscillator.
Geometry information shall be provided for both ring oscillators and static inverters.
1.3.2.2 Recommended measurements
The following additional measurements are strongly recommended:
 Measurement of ring oscillator output using multiple supply voltages.
 Simultaneous measurement of ring oscillator output at two or more nodes, using buffer stages
between the ring oscillator and measurement apparatus. This is in addition to, and should not be
instead of, measurement of ring oscillator output at one node.
1.3.3 Repeatability and reporting sample size
Sample performance between different devices may vary due to variations in the fabrication process.
Additionally, it is useful to determine the repeatability of the reported results. Therefore, sample size is to
be reported thus:
 If no sample size is reported, it is assumed that the data represents a sample size of a single device
(i.e., may not represent repeatable results).
 For sample sizes larger than one, the sample size is reported with the method of sampling (e.g.,
whether all devices were characterized, a randomly-chosen fraction of the total sample set).
A description of what the reported data demonstrates (e.g., average values, worst-case) is also required.

Published by IEC under license from IEEE. © 2006 IEEE. All rights reserved.

IEEE Std 1620.1-2006
1.3.4 Application of low-noise techniques
In order for comparability between different device structures and eventual compatibility to
nanoelectronics, voltages and applicable geometries are given so that electrical fields (V/cm) may be
determined. For example, film thickness is reported along with VGS values, and channel length is reported
with VDS data. Preferably, electrical field values are specified.

Due to optical sensitivity of some organic semiconducting materials, all measurements should be conducted
inside a light-insulating enclosure that is preferably earth (safety) grounded. Optical isolation is
recommended if exposure to ambient light causes a change of more than 1% from values obtained in the
dark.
Due to the high impedances and extremely low current values being measured, proximity of personnel,
heavy machinery, or other potential electromagnetic/radiofrequency interference (EMI/RFI) sources should
be maintained as far away from the measurement system while in operation. This is of particular concern
when measured voltages are below 1 mV or when current values are less than 1 μA.
1.3.5 Characteristics and effects of instrument probing
The probe means used for characterizing ring oscillator output will affect the waveform due to loading of
the ring oscillator nodes. Methods of measuring the oscillator wave include direct probing of the ring
oscillator with an oscilloscope probe (passive or active), or indirect probing where the oscillator output is
connected to a suitable buffer amplifier (for example, another inverter; this mimics the loading effects when
the circuit is used in typical applications).

Effects of all types of measurements include:
 Introduction of capacitance, which may reduce ring oscillator speed
 Introduction of shunt resistances, which may reduce voltage swing and/or affect oscillator speed

It is recommended that a buffer stage or stages be added to the ring oscillator for frequency output
measurement. This buffer is typically an additional inverter (often, but not necessarily, with the same
physical design of the inverters used to construct the ri
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