IEC 63229:2021

Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.

General Information

• Status: Published
• Publication Date: 06-Apr-2021
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: TC 47 - Semiconductor devices
• Drafting Committee: WG 5 - TC 47/WG 5
• Current Stage: PPUB - Publication issued
• Start Date: 07-Apr-2021
• Completion Date: 07-May-2021

Overview

IEC 63229:2021 - "Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate" - provides internationally agreed guidelines for defining and classifying defects observed in as‑grown GaN epitaxial films deposited on SiC substrates. The standard uses schematic drawings, optical microscope (OM) and transmission electron microscope (TEM) images to identify and describe defects. It covers defects intrinsic to the epitaxial growth on SiC (including common SiC polytypes such as 4H and 6H) and explicitly excludes defects introduced by later processing steps.

Key topics

• Scope and terminology: precise definitions for GaN, SiC, epitaxial film, crystal directions, point/line/ surface defects, dislocations, Burgers vector, Schottky and Frenkel defects, etc.
• Defect classification: a structured taxonomy of defects in GaN-on‑SiC films, including:
  • Point defects: vacancy, interstitial, substitutional, point defect complexes
  • Extended defects: threading dislocations, macroscopic dislocations
  • Surface/morphological defects: hillocks, pits, scratches
  • Volume defects: inclusions, cracks
  • A catch‑all “others” class for atypical features
• Illustrative examples: schematic, OM and TEM imagery provided to standardize visual identification and communication.
• Measurement context: guidance focuses on identification and classification rather than quantitative acceptance limits - directed at as‑grown film inspection only.

Applications

• Establishes a common language for defect characterization in GaN epitaxy on SiC, improving consistency across:
  • Epitaxial process development and optimization (MOCVD/MBE teams)
  • Incoming/outgoing quality control and inspection protocols
  • Failure analysis and reliability assessment for high‑power/high‑frequency GaN devices
  • Supplier–customer communication and datasheet reporting
• Useful for labs performing OM/TEM analysis, device manufacturers targeting GaN‑on‑SiC RF and power applications, and researchers comparing defect populations.

Who should use this standard

• Epitaxy and process engineers working on GaN-on‑SiC
• Quality assurance, metrology, and failure analysis teams
• Semiconductor device designers and reliability engineers
• Test laboratories, academic researchers, and standards bodies involved in wide‑bandgap semiconductor technology

Related information

• IEC 63229 complements other IEC publications on semiconductor device terminology and epitaxy practices (see IEC Electropedia and IEC webstore for related standards and the latest editions). For purchase or to view the official document, consult the IEC Webstore.

Keywords: IEC 63229, GaN epitaxial film, SiC substrate, GaN‑on‑SiC defects, defect classification, TEM, optical microscopy, threading dislocation, vacancy, semiconductor standards.

Standards Content (Sample)

IEC 63229 ®
Edition 1.0 2021-04
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Classification of defects in gallium nitride epitaxial film
on silicon carbide substrate
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IEC 63229 ®
Edition 1.0 2021-04
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Classification of defects in gallium nitride epitaxial

film on silicon carbide substrate

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99 ISBN 978-2-8322-9669-1

– 2 – IEC 63229:2021 © IEC 2021
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Classification of defects . 9
4.1 General . 9
4.2 Description of the defect classes. 9
4.2.1 General . 9
4.2.2 Vacancy . 9
4.2.3 Interstitial . 10
4.2.4 Substitutional defect . 11
4.2.5 Point defect complex . 12
4.2.6 Threading dislocation . 13
4.2.7 Crack . 14
4.2.8 Inclusion . 15
4.2.9 Hillock . 16
4.2.10 Pit. 18
4.2.11 Scratch . 20
4.2.12 Others . 21

Figure 1 – Vacancy . 10
Figure 2 – Interstitial . 11
Figure 3 – Substitutional defect. 12
Figure 4 – Point defect complex . 13
Figure 5 – Threading dislocation . 14
Figure 6 – Crack . 15
Figure 7 – Inclusion . 16
Figure 8 – Hillock . 18
Figure 9 – Pit . 20
Figure 10 – Scratch . 21

Table 1 – Classification of defects in GaN epitaxial film on SiC substrate . 9

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
CLASSIFICATION OF DEFECTS IN GALLIUM NITRIDE
EPITAXIAL FILM ON SILICON CARBIDE SUBSTRATE

FOREWORD
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International Standard IEC 63229 has been prepared by IEC technical committee 47:
Semiconductor devices. It is an International Standard.
The text of this International Standard is based on the following documents:
FDIS Report on voting
47/2687/FDIS 47/2693/RVD
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.

– 4 – IEC 63229:2021 © IEC 2021
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INTRODUCTION
Gallium nitride (GaN) as a representative of the wide band gap semiconductors has
outstanding properties, such as wide band gap, high critical electric field, high electron
saturation drift velocity, and good resistance to corrosion and radiation. Owing to these
properties, GaN can bring significant improvements to electronic devices, such as high-
voltage, high-frequency, and high-power, which will be widely used in wireless communication
base stations, radars, automotive electronics, aerospace, the nuclear industry, and military
electronics.
To date, the development of GaN epitaxial film and related devices is hindered by high cost,
low yield, and poor reliability. Among them, the defects in GaN epitaxial film, which closely
related to device reliability, are especially serious.
There are various defects found in GaN epitaxial film on silicon carbide (SiC) substrate. In
addition, global researchers have not established a uniform definition and classification
criterion for defects in GaN epitaxial film yet. Thus, it is essential to establish a set of
international standards for GaN epitaxial film on SiC substrate, which will benefit the
development of GaN epitaxial film and related devices.
To define and classify defects in GaN epitaxial film on SiC substrate, a new international
standard is proposed. The main contents of this document are listing and illustrating the
definition and classification of defects in GaN epitaxial film on SiC substrate, providing
reference for future GaN-related research and device manufacture.

– 6 – IEC 63229:2021 © IEC 2021
SEMICONDUCTOR DEVICES –
CLASSIFICATION OF DEFECTS IN GALLIUM NITRIDE
EPITAXIAL FILM ON SILICON CARBIDE SUBSTRATE

1 Scope
This International Standard gives guidelines for the definition and classification of defects in
GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of
examples, mainly by schematic illustrations, optical microscope images, and transmission
electron microscope images for these defects. This document covers only defects in as-grown
GaN epitaxial film on SiC substrate and does not include defects caused by subsequent
processes.
2 Normative references
There are no normative references in this document.
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
3.1
Gallium nitride
GaN
compound semiconductor crystal composed of gallium and nitrogen
3.2
substrate
material on which epitaxial layer is deposited
[SOURCE: IEC 63068-1:2019, 3.9, modified – "Homoepitaxial" has been replaced by
"epitaxial".]
3.3
Silicon carbide
SiC
semiconductor crystal composed of silicon and carbon, which exhibits a large number of
polytypes such as 4H and 6H
Note 1 to entry: A symbol like 4H gives the number of periodic stacking layers (2, 3, 4,…) and the crystal
symmetry (H=hexagonal) of each polytype.
[SOURCE: IEC 63068-1:2019, 3.1, modified – Polytype of 3C has been deleted.]

3.4
4H-SiC
SiC crystal showing
...