Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.

General Information

Status
Published
Publication Date
06-Apr-2021
Technical Committee
Drafting Committee
Current Stage
PPUB - Publication issued
Start Date
07-May-2021
Completion Date
07-Apr-2021
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IEC 63229:2021 - Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
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IEC 63229
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Edition 1.0 2021-04
INTERNATIONAL
STANDARD

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Semiconductor devices – Classification of defects in gallium nitride epitaxial film
on silicon carbide substrate
IEC 63229:2021-04(en)

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IEC 63229

®


Edition 1.0 2021-04




INTERNATIONAL



STANDARD








colour

inside










Semiconductor devices – Classification of defects in gallium nitride epitaxial

film on silicon carbide substrate


























INTERNATIONAL

ELECTROTECHNICAL


COMMISSION





ICS 31.080.99 ISBN 978-2-8322-9669-1




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® Registered trademark of the International Electrotechnical Commission

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– 2 – IEC 63229:2021 © IEC 2021
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Classification of defects . 9
4.1 General . 9
4.2 Description of the defect classes. 9
4.2.1 General . 9
4.2.2 Vacancy . 9
4.2.3 Interstitial . 10
4.2.4 Substitutional defect . 11
4.2.5 Point defect complex .
...

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