IEC 63229:2021

Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.

General Information

• Status: Published
• Publication Date: 06-Apr-2021
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: TC 47 - Semiconductor devices
• Drafting Committee: WG 5 - TC 47/WG 5
• Current Stage: PPUB - Publication issued
• Start Date: 07-May-2021
• Completion Date: 07-Apr-2021

Standards Content (Sample)

IEC 63229 ®
Edition 1.0 2021-04
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Classification of defects in gallium nitride epitaxial film
on silicon carbide substrate
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IEC 63229 ®
Edition 1.0 2021-04
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Classification of defects in gallium nitride epitaxial

film on silicon carbide substrate

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99 ISBN 978-2-8322-9669-1

– 2 – IEC 63229:2021 © IEC 2021
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Classification of defects . 9
4.1 General . 9
4.2 Description of the defect classes. 9
4.2.1 General . 9
4.2.2 Vacancy . 9
4.2.3 Interstitial . 10
4.2.4 Substitutional defect . 11
4.2.5 Point defect complex . 12
4.2.6 Threading dislocation . 13
4.2.7 Crack . 14
4.2.8 Inclusion . 15
4.2.9 Hillock . 16
4.2.10 Pit. 18
4.2.11 Scratch . 20
4.2.12 Others . 21

Figure 1 – Vacancy . 10
Figure 2 – Interstitial . 11
Figure 3 – Substitutional defect. 12
Figure 4 – Point defect complex . 13
Figure 5 – Threading dislocation . 14
Figure 6 – Crack . 15
Figure 7 – Inclusion . 16
Figure 8 – Hillock . 18
Figure 9 – Pit . 20
Figure 10 – Scratch . 21

Table 1 – Classification of defects in GaN epitaxial film on SiC substrate . 9

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
CLASSIFICATION OF DEFECTS IN GALLIUM NITRIDE
EPITAXIAL FILM ON SILICON CARBIDE SUBSTRATE

FOREWORD
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International Standard IEC 63229 has been prepared by IEC technical committee 47:
Semiconductor devices. It is an International Standard.
The text of this International Standard is based on the following documents:
FDIS Report on voting
47/2687/FDIS 47/2693/RVD
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.

– 4 – IEC 63229:2021 © IEC 2021
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
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INTRODUCTION
Gallium nitride (GaN) as a representative of the wide band gap semiconductors has
outstanding properties, such as wide band gap, high critical electric field, high electron
saturation drift velocity, and good resistance to corrosion and radiation. Owing to these
properties, GaN can bring significant improvements to electronic devices, such as high-
voltage, high-frequency, and high-power, which will be widely used in wireless communication
base stations, radars, automotive electronics, aerospace, the nuclear industry, and military
electronics.
To date, the development of GaN epitaxial film and related devices is hindered by high cost,
low yield, and poor reliability. Among them, the defects in GaN epitaxial film, which closely
related to device reliability, are especially serious.
There are various defects found in GaN epitaxial film on silicon carbide (SiC) substrate. In
addition, global researchers have not established a uniform definition and classification
criterion for defects in GaN epitaxial film yet. Thus, it is essential to establish a set of
international standards for GaN epitaxial film on SiC substrate, which will benefit the
development of GaN epitaxial film and related devices.
To define and classify defects in GaN epitaxial film on SiC substrate, a new international
standard is proposed. The main contents of this document are listing and illustrating the
definition and classification of defects in GaN epitaxial film on SiC substrate, providing
reference for future GaN-related research and device manufacture.

– 6 – IEC 63229:2021 © IEC 2021
SEMICONDUCTOR DEVICES –
CLASSIFICATION OF DEFECTS IN GALLIUM NITRIDE
EPITAXIAL FILM ON SILICON CARBIDE SUBSTRATE

1 Scope
This International Standard gives guidelines for the definition and classification of defects in
GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of
examples, mainly by schematic illustrations, optical microscope images, and transmission
electron microscope images for these defects. This document covers only defects in as-grown
GaN epitaxial film on SiC substrate and does not include defects caused by subsequent
processes.
2 Normative references
There are no normative references in this document.
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IE
...