Semiconductor devices - Micro-electromechanical devices - Part 36: Environmental and dielectric withstand test methods for MEMS piezoelectric thin films

IEC 62047-36:2019 (E) specifies test methods for evaluating the durability of MEMS piezoelectric thin film materials under the environmental stress of temperature and humidity and under electrical stress, and test conditions for appropriate quality assessment. Specifically, this document specifies test methods and test conditions for measuring the durability of a DUT under temperature and humidity conditions and applied voltages. It further applies to evaluations of converse piezoelectric properties in piezoelectric thin films formed primarily on silicon substrates, i.e., piezoelectric thin films used as actuators. This document does not cover reliability assessments, such as methods of predicting the lifetime of a piezoelectric thin film based on a Weibull distribution.

General Information

Status
Published
Publication Date
04-Apr-2019
Current Stage
PPUB - Publication issued
Completion Date
05-Apr-2019
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IEC 62047-36
Edition 1.0 2019-04
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 36: Environmental and dielectric withstand test methods for MEMS
piezoelectric thin films
IEC 62047-36:2019-04(en)
---------------------- Page: 1 ----------------------
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---------------------- Page: 2 ----------------------
IEC 62047-36
Edition 1.0 2019-04
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 36: Environmental and dielectric withstand test methods for MEMS
piezoelectric thin films
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99; 31.140 ISBN 978-2-8322-6720-2

Warning! Make sure that you obtained this publication from an authorized distributor.

® Registered trademark of the International Electrotechnical Commission
---------------------- Page: 3 ----------------------
– 2 – IEC 62047-36:2019 © IEC 2019
CONTENTS

FOREWORD ........................................................................................................................... 3

INTRODUCTION ..................................................................................................................... 5

1 Scope .............................................................................................................................. 6

2 Normative references ...................................................................................................... 6

3 Terms and definitions ...................................................................................................... 6

4 Testing procedure ............................................................................................................ 6

4.1 General ................................................................................................................... 6

4.2 Initial measurements ............................................................................................... 7

4.3 Tests ...................................................................................................................... 7

4.3.1 DUT setup and environmental conditions ......................................................... 7

4.3.2 Test duration ................................................................................................... 7

4.3.3 Number of tests and number of DUTs .............................................................. 7

4.4 Post treatment ........................................................................................................ 8

4.5 Final measurements ................................................................................................ 8

5 Environmental and dielectric withstand testing ................................................................. 8

5.1 Environmental testing ............................................................................................. 8

5.1.1 General ........................................................................................................... 8

5.1.2 High temperature bias test ............................................................................... 9

5.1.3 High temperature and high humidity bias test .................................................. 9

5.1.4 High temperature storage ................................................................................ 9

5.1.5 Low temperature storage ............................................................................... 10

5.1.6 High temperature and high humidity storage .................................................. 10

5.1.7 Soldering heat test ........................................................................................ 10

5.1.8 Temperature cycling test ............................................................................... 11

5.2 Dielectric withstand testing ................................................................................... 12

Annex A (informative) Report of test results ......................................................................... 14

A.1 General ................................................................................................................. 14

A.2 Environmental test ................................................................................................ 14

A.3 Dielectric withstand test ........................................................................................ 14

Bibliography .......................................................................................................................... 16

Figure 1 – Flow of the testing procedure ................................................................................. 7

Figure 2 – Temperature profile for reflow soldering with lead-free solder .............................. 11

Figure 3 – Temperature profile of the temperature cycling test .............................................. 12

Figure 4 – Example of a dielectric withstand test circuit for DC voltage ................................. 13

Figure A.1 – I-V measurement .............................................................................................. 15

Figure A.2 – Optical image of top electrodes before and after breakdown ............................. 15

Table 1 – Selectable test conditions ........................................................................................ 9

Table 2 – Selectable test conditions ...................................................................................... 10

Table 3 – Soldering heat test condition ................................................................................. 10

Table 4 – Conditions of temperature profile for reflow soldering with lead-free solder ........... 11

Table A.1 – High-temperature test ........................................................................................ 14

Table A.2 – Dielectric withstand test ..................................................................................... 15

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IEC 62047-36:2019 © IEC 2019 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 36: Environmental and dielectric withstand test methods
for MEMS piezoelectric thin films
FOREWORD

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International Standard IEC 62047-36 has been prepared by subcommittee 47F:

Micro-electromechanical systems, of IEC technical committee 47: Semiconductor devices.

The text of this International Standard is based on the following documents:
FDIS Report on voting
47F/329/FDIS 47F/334/RVD

Full information on the voting for the approval of this International Standard can be found in

the report on voting indicated in the above table.

This document has been drafted in accordance with the ISO/IEC Directives, Part 2.

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– 4 – IEC 62047-36:2019 © IEC 2019

A list of all parts in the IEC 62047 series, published under the general title Semiconductor

devices – Micro-electromechanical devices, can be found on the IEC website.

The committee has decided that the contents of this document will remain unchanged until the

stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to

the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
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IEC 62047-36:2019 © IEC 2019 – 5 –
INTRODUCTION

Piezoelectric MEMS technology belongs to an interdisciplinary field founded on a wide range

of element technologies including piezoelectric thin film materials, thin film deposition and

microfabrication processes, device design, and system formulation. Along with the increased

sophistication of MEMS functionality, research on MEMS applications for piezoelectric thin

films, such as Pb(Zr,Ti)O (PZT) or AlN, has become increasingly popular in recent years.

MEMS piezoelectric thin films have the capability of configuring simple compact devices that

have a lower power consumption, higher sensitivity, and quicker response than conventional

bulk-type, electrostatic, or electromagnetic thin films. However, their device performance is

greatly affected by the properties of the thin film materials.

Several test methods for thin film materials have been established to date. Among these, the

overriding property that determines device performance is the material’s piezoelectric

property. Standardization of IEC 62047-30 (Semiconductor devices – Micro-electromechanical

devices – Part 30: Measurement methods of electro-mechanical conversion characteristics of

MEMS piezoelectric thin film) has been promoted for the purpose of precisely measuring and

evaluating MEMS piezoelectric thin films using simply structured test pieces and inexpensive

equipment.

In order to realize a viable MEMS piezoelectric thin film, it is essential to gain a clear

understanding of how its piezoelectric properties change as a result of the environmental

stress of temperature and humidity, and degradation in the piezoelectric material over time at

its surfaces and interfaces. Achieving a viable MEMS piezoelectric thin film will also require a

clear understanding of dielectric withstand for the electrical stress of a voltage (electric field)

higher than the drive voltage (electric field) used for normal operations.
The following summarizes the features of this standard.

• The degree of degradation in a device under test (DUT) is evaluated by measuring the

piezoelectric properties of the DUT before and after applying the environmental stress of

temperature and humidity using the measurement methods in IEC 62047-30.

• Test conditions for moist heat and dielectric withstand tests are derived from existing

standards for semiconductor devices and fixed capacitors of ceramic dielectric.

• The dielectric withstand property is evaluated by measuring the leakage current under the

DC bias voltage.
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– 6 – IEC 62047-36:2019 © IEC 2019
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 36: Environmental and dielectric withstand test methods
for MEMS piezoelectric thin films
1 Scope

This part of IEC 62047 specifies test methods for evaluating the durability of MEMS

piezoelectric thin film materials under the environmental stress of temperature and humidity

and under electrical stress, and test conditions for appropriate quality assessment.

Specifically, this document specifies test methods and test conditions for measuring the

durability of a DUT under temperature and humidity conditions and applied voltages. It further

applies to evaluations of converse piezoelectric properties in piezoelectric thin films formed

primarily on silicon substrates, i.e., piezoelectric thin films used as actuators.

This document does not cover reliability assessments, such as methods of predicting the

lifetime of a piezoelectric thin film based on a Weibull distribution.
2 Normative references

The following documents are referred to in the text in such a way that some or all of their

content constitutes requirements of this document. For dated references, only the edition

cited applies. For undated references, the latest edition of the refer
...

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