IEC 62047-36:2019

Semiconductor devices - Micro-electromechanical devices - Part 36: Environmental and dielectric withstand test methods for MEMS piezoelectric thin films

IEC 62047-36:2019 (E) specifies test methods for evaluating the durability of MEMS piezoelectric thin film materials under the environmental stress of temperature and humidity and under electrical stress, and test conditions for appropriate quality assessment. Specifically, this document specifies test methods and test conditions for measuring the durability of a DUT under temperature and humidity conditions and applied voltages. It further applies to evaluations of converse piezoelectric properties in piezoelectric thin films formed primarily on silicon substrates, i.e., piezoelectric thin films used as actuators. This document does not cover reliability assessments, such as methods of predicting the lifetime of a piezoelectric thin film based on a Weibull distribution.

General Information

• Status: Published
• Publication Date: 04-Apr-2019
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 31.080.99 - Other semiconductor devices
• ICS: 31.140 - Piezoelectric devices
• Technical Committee: SC 47F - Micro-electromechanical systems
• Current Stage: PPUB - Publication issued
• Start Date: 26-Apr-2019
• Completion Date: 05-Apr-2019

Standards Content (Sample)

IEC 62047-36 ®
Edition 1.0 2019-04
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 36: Environmental and dielectric withstand test methods for MEMS
piezoelectric thin films
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IEC 62047-36 ®
Edition 1.0 2019-04
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Micro-electromechanical devices –

Part 36: Environmental and dielectric withstand test methods for MEMS

piezoelectric thin films
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99; 31.140 ISBN 978-2-8322-6720-2

– 2 – IEC 62047-36:2019 © IEC 2019
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Testing procedure . 6
4.1 General . 6
4.2 Initial measurements . 7
4.3 Tests . 7
4.3.1 DUT setup and environmental conditions . 7
4.3.2 Test duration . 7
4.3.3 Number of tests and number of DUTs . 7
4.4 Post treatment . 8
4.5 Final measurements . 8
5 Environmental and dielectric withstand testing . 8
5.1 Environmental testing . 8
5.1.1 General . 8
5.1.2 High temperature bias test . 9
5.1.3 High temperature and high humidity bias test . 9
5.1.4 High temperature storage . 9
5.1.5 Low temperature storage . 10
5.1.6 High temperature and high humidity storage . 10
5.1.7 Soldering heat test . 10
5.1.8 Temperature cycling test . 11
5.2 Dielectric withstand testing . 12
Annex A (informative) Report of test results . 14
A.1 General . 14
A.2 Environmental test . 14
A.3 Dielectric withstand test . 14
Bibliography . 16

Figure 1 – Flow of the testing procedure . 7
Figure 2 – Temperature profile for reflow soldering with lead-free solder . 11
Figure 3 – Temperature profile of the temperature cycling test . 12
Figure 4 – Example of a dielectric withstand test circuit for DC voltage . 13
Figure A.1 – I-V measurement . 15
Figure A.2 – Optical image of top electrodes before and after breakdown . 15

Table 1 – Selectable test conditions . 9
Table 2 – Selectable test conditions . 10
Table 3 – Soldering heat test condition . 10
Table 4 – Conditions of temperature profile for reflow soldering with lead-free solder . 11
Table A.1 – High-temperature test . 14
Table A.2 – Dielectric withstand test . 15

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 36: Environmental and dielectric withstand test methods
for MEMS piezoelectric thin films

FOREWORD
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International Standard IEC 62047-36 has been prepared by subcommittee 47F:
Micro-electromechanical systems, of IEC technical committee 47: Semiconductor devices.
The text of this International Standard is based on the following documents:
FDIS Report on voting
47F/329/FDIS 47F/334/RVD
Full information on the voting for the approval of this International Standard can be found in
the report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.

– 4 – IEC 62047-36:2019 © IEC 2019
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INTRODUCTION
Piezoelectric MEMS technology belongs to an interdisciplinary field founded on a wide range
of element technologies including piezoelectric thin film materials, thin film deposition and
microfabrication processes, device design, and system formulation. Along with the increased
sophistication of MEMS functionality, research on MEMS applications for piezoelectric thin
films, such as Pb(Zr,Ti)O (PZT) or AlN, has become increasingly popular in recent years.
MEMS piezoelectric thin films have the capability of configuring simple compact devices that
have a lower power consumption, higher sensitivity, and quicker response than conventional
bulk-type, electrostatic, or electromagnetic thin films. However, their device performance is
greatly affected by the properties of the thin film materials.
Several test methods for thin film materials have been established to date. Among these, the
overriding property that determines device performance is the material’s piezoelectric
property. Standardization of IEC 62047-30 (Semiconductor devices – Micro-electromechanical
devices – Part 30: Measurement methods of electro-mechanical conversion characteristics of
MEMS piezoelectric thin film) has been promoted for the pur
...