IEC 62007-1:2015

Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Specification template for essential ratings and characteristics

IEC 62007-1:2015 is a specification template for essential ratings and characteristics of the following categories of semiconductor optoelectronic devices to be used in the field of fibre optic systems and subsystems:
- semiconductor photoemitters;
- semiconductor photoelectric detectors;
- monolithic or hybrid integrated optoelectronic devices and their modules. This part of IEC 62007 provides a frame for the preparation of detail specifications for the essential ratings and characteristics. In using this part of IEC 62007, detail specification writers add but do not delete specification parameters and/or groups of specification parameters for particular applications. This third edition cancels and replaces the second edition published in 2008. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition. The definitions of some symbols and terms are revised in order to harmonize them with those in other SC 86C documents; A clause on APD-TIA has been added. Keywords: semiconductor optoelectronic devices, semiconductor photoemitters, semiconductor photoelectric detectors, monolithic or hybrid integrated optoelectronic devices

Dispositifs optoélectroniques à semiconducteurs pour application dans les systèmes à fibres optiques - Partie 1: Modèle de spécification relatif aux valeurs et caractéristiques essentielles

L'IEC 62007-1:2015 est un modèle de spécification des valeurs et caractéristiques essentielles applicables aux catégories suivantes de dispositifs optoélectroniques à semiconducteurs destinés à être utilisés dans le domaine des systèmes et sous-systèmes à fibres optiques:
- photoémetteurs à semiconducteurs;
- détecteurs photoélectriques à semiconducteurs;
- dispositifs optoélectroniques intégrés, monolithiques ou hybrides, et leurs modules. La présente partie de l'IEC 62007 fournit une trame pour la préparation des spécifications détaillées des valeurs et caractéristiques essentielles. En utilisant la présente partie de l'IEC 62007, les rédacteurs de spécifications particulières ajoutent, mais ne suppriment pas de paramètres et/ou des groupes de paramètres pour des applications particulières. Cette troisième édition annule et remplace la deuxième édition parue en 2008. Cette édition constitue une révision technique. Cette édition inclut les modifications techniques majeures suivantes par rapport à l'édition précédente. Les définitions de certains symboles et termes ont été revues afin de les harmoniser avec celles des autres documents du SC 86C; Un article traitant des APD-TIA a été ajouté. Mots clés: dispositifs optoélectroniques à semiconducteurs, photoémetteurs à semiconducteurs; détecteurs photoélectriques à semiconducteurs; dispositifs optoélectroniques intégrés, monolithiques ou hybrides

General Information

• Status: Published
• Publication Date: 21-Sep-2022
• ICS: 31.080.01 - Semiconductor devices in general
• ICS: 31.260 - Optoelectronics. Laser equipment
• ICS: 33.180.01 - Fibre optic systems in general
• Technical Committee: SC 86C - Fibre optic systems, sensing and active devices
• Current Stage: PPUB - Publication issued
• Start Date: 30-Mar-2015
• Completion Date: 30-Jun-2015

Relations

• Amended By: IEC 62007-1:2015/AMD1:2022 - Amendment 1 - Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Specification template for essential ratings and characteristics
• Effective Date: 05-Sep-2023
• Revises: IEC 62007-1:2008 - Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Specification template for essential ratings and characteristics
• Effective Date: 05-Sep-2023

Standards Content (Sample)

IEC 62007-1 ®
Edition 3.0 2015-03
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor optoelectronic devices for fibre optic system applications –
Part 1: Specification template for essential ratings and characteristics

Dispositifs optoélectroniques à semiconducteurs pour application dans les
systèmes à fibres optiques –
Partie 1: Modèle de spécification relatif aux valeurs et caractéristiques
essentielles
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IEC 62007-1 ®
Edition 3.0 2015-03
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor optoelectronic devices for fibre optic system applications –

Part 1: Specification template for essential ratings and characteristics

Dispositifs optoélectroniques à semiconducteurs pour application dans les

systèmes à fibres optiques –
Partie 1: Modèle de spécification relatif aux valeurs et caractéristiques

essentielles
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS: 31.080.01; 31.260; 33.180.01 ISBN 978-2-83222-589-9

– 2 – IEC 62007-1:2015  IEC 2015
CONTENTS
FOREWORD . 5
1 Scope . 7
2 Normative references. 7
3 Terms, definitions and abbreviations . 7
3.1 Terms and definitions . 7
3.2 Abbreviations . 9
4 LEDs for fibre optic systems or subsystems. 9
4.1 Type . 9
4.2 Semiconductor materials . 9
4.3 Details of outline and encapsulation . 9
4.4 Limiting values (absolute maximum ratings) over the operating temperature
range, unless otherwise stated . 10
4.5 Electrical and optical characteristics . 10
4.6 Supplementary information . 11
5 Laser module with pigtails . 12
5.1 Type . 12
5.2 Semiconductor . 12
5.2.1 Materials . 12
5.2.2 Structure . 12
5.3 Details of outline and encapsulation . 12
5.4 Limiting values (absolute maximum ratings) over the operating temperature
range, unless otherwise stated . 13
5.4.1 General conditions . 13
5.4.2 Laser diode . 13
5.4.3 Photodiode . 13
5.4.4 Thermal sensor (where appropriate) . 13
5.4.5 Thermoelectric cooler (where appropriate) . 14
5.5 Electric and optical characteristics . 14
5.6 Supplementary information . 15
5.7 Hazards . 16
6 PIN photodiodes for fibre optic systems or subsystems . 16
6.1 Type . 16
6.2 Semiconductor materials . 16
6.3 Details of outline and encapsulation . 16
6.4 Limiting values (absolute maximum ratings) over the operating temperature
range, unless otherwise stated . 17
6.5 Electrical and optical characteristics . 18
6.6 Supplementary information . 18
7 Avalanche photodiodes (APDs) with or without pigtails . 19
7.1 Type . 19
7.2 Semiconductor . 19
7.3 Details of outline and encapsulation . 19
7.4 Limiting values (absolute maximum ratings) over the operating temperature
range, unless otherwise stated . 19
7.5 Electrical and optical characteristics . 19
7.6 Supplementary information . 20
8 PIN-TIA modules for fibre optic systems or subsystems . 21

8.1 Type . 21
8.2 Semiconductor materials . 21
8.3 Structure . 21
8.4 Details of outline and encapsulation . 21
8.5 Limiting values (absolute maximum ratings) over the operating temperature
range, unless otherwise stated . 22
8.6 Operating conditions at T = 25 °C, unless otherwise stated . 22
amb
8.7 Electrical and optical characteristics . 23
8.8 Supplementary information . 23
9 APD-TIA modules for fibre optic systems or subsystems . 24
9.1 Type . 24
9.2 Semiconductor materials . 24
9.3 Structure . 24
9.4 Details of outline and encapsulation . 24
9.5 Limiting values (absolute maximum ratings) over the operating temperature
range, unless otherwise stated . 24
9.6 Electrical and optical characteristics . 25
10 Laser diode modules for pumping an optical fibre amplifier . 26
10.1 Type . 26
10.2 Semiconductor materials . 26
10.3 Structure . 26
10.4 Details of outline and encapsulation . 26
10.5 Limiting values (absolute maximum ratings) over the operating temperature
range, unless otherwise stated . 27
10.6 Electrical and optical characteristics . 27
10.7 Supplementary information . 29
10.8 Hazards . 29
11 Optical modulators for digital fibre optic applications . 29
11.1 Type . 29
11.2 Materials . 29
11.3 Structure . 29
11.4 Details of outline and encapsulation . 30
11.5 Limiting values (absolute maximum ratings) . 30
11.6 Electrical and optical characteristics . 31
11.7 Supplementary information . 32
11.8 Hazards . 32
Bibliography . 33

Table 1 – Limiting values for LEDs . 10
Table 2 – Electrical and optical characteristics for LEDs . 11
Table 3 – Electric and optical characteristics for laser modules with pigtails . 14
Table 4 – Limiting values for PIN photodiodes . 17
Table 5 – Electrical and optical characteristics for PIN photodiodes . 18
Table 6 – Electrical and optical characteristics for avalanche photodiodes (APDs) with
or without pigtails . 20
Table 7 – Limiting values for PIN-TIA modules . 22
Table 8 – Operating conditions for PIN-TIA modules . 22
Table 9 – Electrical and optical characteristics for PIN-TIA modules . 23

– 4 – IEC 62007-1:2015  IEC 2015
Table 10 – Limiting values for APD-TIA modules . 25
Table 11 – Electrical and optical characteristics for APD-TIA modules . 25
Table 12 – Limiting values for laser diode modules for pumping an optical fibre
amplifier . 27
Table 13 – Electrical and optical characteristics for laser diode modules for pumping
an optical fibre amplifier . 28
Table 14 – Limiting values for optical modulators for digital fibre optic applications . 30
Table 15 – Electrical and optical characteristics for optical modulators for digital fibre
optic applications . 31

COMMISSION ÉLECTROTECHNIQUE INTERNATIONALE
____________
SEMICONDUCTOR OPTOELECTRONIC DEVICES
FOR FIBRE OPTIC SYSTEM APPLICATIONS –

Part 1: Specification template for essential ratings and characteristics

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62007-1 has been prepared by subcommittee 86C: Fibre optic
systems and active devices, of IEC technical committee 86: Fibre optics.
This third edition cancels and replaces the second edition published in 2008. This edition
constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous
edition.
1) The definitions of some symbols and terms are revised in order to harmonize them with
those in other SC 86C documents.
2) A clause on APD-TIA has been added.

– 6 – IEC 62007-1:2015  IEC 2015
The text of this standard is based on the following documents:
CDV Report on voting
86C/1256/CDV 86C/1283/RVC
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC 62007 series, published under the general title Semiconductor
optoelectronic devices for fibre optic system applications, can be found on the IEC website.
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
SEMICONDUCTOR OPTOELECTRONIC DEVICES
FOR FIBRE OPTIC SYSTEM APPLICATIONS –

Part 1: Specification template for essential ratings and characteristics

1 Scope
This part of IEC 62007 is a specification template for essential ratings and characteristics of
the following categories of semiconductor optoelectronic devices to be used in the field of
fibre optic systems and subsystems:
– semiconductor photoemitters;
– semiconductor photoelectric detectors;
– monolithic or hybrid integrated optoelectronic devices and their modules.
This part of IEC 62007 provides a frame for the preparation of detail specifications for the
essential ratings and characteristics.
In using this part of IEC 62007, detail specification writers add but do not delete specification
parameters and/or groups of specification parameters for particular applications.
2 Normative references
The following documents, in whole or in part, are normatively referenced in this document and
are indispensable for its application. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC 60825 (all parts), Safety of laser products
IEC 60747-5-1, Discrete semiconductor devices and integrated circuits – Part 5-1:
Optoelectronic devices – General
3 Terms, definitions and abbreviations
3.1 Terms and definitions
For the purposes of this document, the terms and definitions concerning physical concepts,
types of devices, general terms, and ratings and characteristics given in IEC 60747-5-1 and
the following apply.
3.1.1
PIN photodiode
photodiode with a large intrinsic region sandwiched between P- and N-doped semiconducting
regions used for the detection of optical radiation
[SOURCE: IEC 60050-731-06-29, modified — The note has been deleted.]

– 8 – IEC 62007-1:2015  IEC 2015
3.1.2
avalanche photodiode
APD
photodiode operating with a bias voltage such that the primary photocurrent undergoes
amplification by cumulative multiplication of charge carriers
Note 1 to entry: This note applies to the French language only.
[SOURCE: IEC 60050-731-06-30, modified — The note has been deleted.]
3.1.3
RIN
relative intensity noise
quotient of the radiant power mean square fluctuations < ∆Φ > to the mean square radiant
e
power <Φ > , normalized to a frequency band of unit width
e
Note 1 to entry: RIN is usually expressed in dB/Hz.
2 2
RIN = 10 log {< ∆Φ > (< Φ > × ∆f )}
10 e e
Note 2 to entry: This note applies to the French language only.
3.1.4
∆λ
c
spectral shift
deviation of the peak-emission wavelength at a particular case temperature or a particular
forward current from its value at a specified reference case temperature or a specified
reference forward current, respectively
Note 1 to entry: The specific reference temperature is typically 25 °C.
3.1.5
s
input reflection coefficient
quotient of the high frequency reflected voltage to the high frequency incident voltage
3.1.6
E
tr
tracking error
deviation of the radiant power at a particular case temperature from its value at a specified
reference case temperature
Note 1 to entry: The specific reference temperature is typically 25 °C.
Note 2 to entry: Specifications usually refer to the maximum deviation (absolute value) in two specified
temperature ranges below and above the specified reference case temperature.
Note 3 to entry: The tracking error is usually expressed as a percentage of the radiant power at the reference
case temperature.
3.1.7
R
D
R
diode responsivity
responsivity
quotient of the photocurrent I by the radiant power Φ at the optical port of the
p e
photodiode
Note 1 to entry: If no ambiguity is likely to occur, the shorter term and shorter letter symbol may be used.

Note 2 to entry: Photodiode means a complete device such as:
– chip itself;
– packaged component with window or pigtail.
3.1.8
F
e
excess noise factor
noise resulting from the spatial and timing fluctuations of the avalanche carrier multiplication,
defined as the ratio of the noise power at a specified reverse bias to the amplified shot noise
of the photocurrent at a reference reverse bias
Note 1 to entry: The reference reverse voltage should be sufficiently low that no carrier multiplication takes place
but sufficiently large that the device is fully depleted and has achieved its rated speed and responsivity.
3.1.9
P
o
overload
maximum received power of a photodiode for obtaining a given bit error rate
3.2 Abbreviations
APD avalanche photodiode
BH buried heterostructure
CMOS complementary metal-oxide semiconductor
CW continuous wave
FWHM full width at half maximum
HBT heterojunction bipolar transistor
LD laser diode
LED light emitting diode
MQW multi-quantum well
RIN relative intensity noise
TEC thermo-electric cooler
TIA transimpedance amplifier
4 LEDs for fibre optic systems or subsystems
4.1 Type
Ambient-rated or case-rated LED with or without optical fibre pigtail for fibre optic systems or
subsystems
4.2 Semiconductor materials
GaAs, GaAlAs, InGaAs, InP, etc.
4.3 Details of outline and encapsulation
4.3.1 IEC and/or national reference number of outline drawing
4.3.2 Method of encapsulation: glass/metal/plastic/other
4.3.3 Terminal identification and indication of any electrical connection between a terminal
and the case
– 10 – IEC 62007-1:2015  IEC 2015
4.3.4 Characteristics of the optical port: relative orientation to mechanical axis, relative
position to mechanical axis, area, numerical aperture
4.3.5 For devices with a fibre pigtail: information on the pigtail fibre, kind of protection,
connector, length
4.3.6 Information on the heat sink of the package
4.4 Limiting values (absolute maximum ratings) over the operating temperature range,
unless otherwise stated
See Table 1.
Table 1 – Limiting values for LEDs
a
Requirements
Characteristics Symbol Unit
Min. Max.
Storage temperature T x x °C
stg
Temperature:
either ambient temperature T x x °C
amb
or case temperature T x x °C
case
Soldering temperature at maximum soldering time and T x °C
sld
minimum distance to case specified
V
Reverse voltage x V
R
Continuous forward current I x mA
F
Derating curve or derating factor

Repetitive peak forward current at specified pulse conditions I x mA
FRM
(where appropriate)
Derating curve or derating factor (where appropriate)
Power dissipation P x W
tot
Derating curve or derating factor (where appropriate)
For case-rated devices:
Virtual junction temperature (where appropriate) T x °C
vj
For devices with pigtail:
Bend radius of pigtail (at specified distance from the case) r x mm(cm)
Shock  x m/s , s
Vibration  x m/s , Hz
Tensile force on devices with pigtail:

Untight structure:
– Tensile force on fibre along its axis F x N
– Tensile force on cladding along its axis F x N
Tight structure:
– Tensile force on pigtail along its axis F x N
a
x represents the value to be specified.

4.5 Electrical and optical characteristics
See Table 2.
Table 2 – Electrical and optical characteristics for LEDs
b
Conditions at Requirements
Characteristics T or T = 25 °C Symbol Unit
amb case
Min. Max.
unless otherwise stated
V
Forward voltage I or Φ specified x V
F
F e
Reverse current V specified I x mA
R R
Differential resistance r x
I or Φ specified Ω
F d
e
Total capacitance V , f specified C x µF
R tot
Noise parameter
a
either relative intensity noise RIN x dB/Hz
I or Φ , f , ∆f specified
F e o N
a
or carrier-to-noise ratio I or Φ , f , ∆f , f , m C/N x dB
F e c N m
specified
Output parameter
a
either radiant output power I specified (d.c. or pulse, or Φ x x mW
F e
both)
a
or forward current I x x mA
Φ specified
F
e
For devices without pigtail: I or Φ , angle φ specified θ x °
F e
1/2
a
Half-intensity angle
For devices without pigtail: I or Φ , angle φ specified ∆θ x °
F e
a
Misalignment angle
Spectral radiation bandwidth I or Φ specified x nm
∆λ
e
F
Bandwidth
either switching times: d.c. current  x s
t
– rise time input pulse current x s
r
t
– fall time pulse width and duty cycle x s
f
specified
a
– delay times t , x s
d(on)
t
d(off)
– peak emission wavelengths   nm
or cut-off frequency f x Hz
I or Φ specified
e c
F
a
Where appropriate.
b
x represents the value to be specified.

4.6 Supplementary information
4.6.1 Typical curve or coefficient
Provide the curve or coefficient in 4.6.1.1 or 4.6.1.2.
4.6.1.1 Typical curve or coefficient of radiant power versus temperature and typical curve
of radiant output power versus forward current (d.c. or pulse, as specified)
4.6.1.2 Typical curve or coefficient of radiant intensity versus temperature and typical
curve of radiant intensity versus forward current (d.c. or pulse, as specified)
4.6.2 Typical curve or coefficient of change in peak emission wavelength versus tem-
perature
4.6.3 Typical radiation diagram
4.6.4 Thermal resistance, ambient-rated or case-rated

– 12 – IEC 62007-1:2015  IEC 2015
5 Laser module with pigtails
5.1 Type
The laser module consists of the following basic parts:
– laser diode
– pigtail
– photodiodes
– thermal sensor where appropriate
– TEC element
5.2 Semiconductor
5.2.1 Materials
The laser module consists of the following materials:
– laser diode (e.g. GaAs, GaAlAs, InGaAsP, InP)
– photodiode (e.g. Ge, Si, GaInAs)
– thermal sensor  where appropriate
– TEC element
5.2.2 Structure
Laser diode, e.g. gain guided, index guided, distributed feedback
5.3 Details of outline and encapsulation
5.3.1 IEC and/or national reference number of the outline drawing
5.3.2 Method of encapsulation: glass/metal/plastic/other
5.3.3 Terminal identification and indication of any electrical connection between a terminal
and the case
5.3.4 Information on the pigtail fibre, e.g. type of fibre, kind of protection, connector, length
5.3.5 Information on the heatsinking of the package

5.4 Limiting values (absolute maximum ratings) over the operating temperature range,
unless otherwise stated
5.4.1 General conditions
5.4.1.1 Minimum and maximum storage temperatures (T )
stg
5.4.1.2 Minimum and maximum operating case temperatures (T )
case
5.4.1.3 Minimum and maximum operating submount temperature (T )
sub
5.4.1.4 Maximum soldering temperature (soldering time and minimum distance to case)
(T )
sld
5.4.1.5 Minimum bend radius of pigtail (at specified distance from the case) (r)
5.4.1.6 Shock (maximum acceleration and pulse duration)
5.4.1.7 Vibration (maximum acceleration and frequency range)
5.4.1.8 Tensile force along cable axis
5.4.1.8.1 Untight structure
– Maximum tensile force on fibre (F)
– Maximum tensile force on cable (F)
5.4.1.8.2 Tight structure
– Maximum tensile force on cable (F)
5.4.2 Laser diode
For laser module without TEC, derating curve or derating factor shall be given for one of the
parameters 5.4.2.2 to 5.4.2.5. For laser module with TEC, T = 25 °C.
sub
5.4.2.1 Maximum reverse voltage (V )
R
5.4.2.2 Maximum continuous forward current (I )
F
5.4.2.3 Maximum continuous radiant power (ϕ )
e
5.4.2.4 Maximum pulsed forward current at stated frequency and pulse duration (I )
FP
5.4.2.5 Maximum pulsed radiant power at stated frequency and pulse duration (ϕ )
ep
5.4.3 Photodiode
5.4.3.1 Maximum reverse voltage (V )
R
5.4.3.2 Maximum forward current (I )
F
5.4.4 Thermal sensor (where appropriate)
5.4.4.1 Maximum ratings
5.4.4.1.1 Maximum power dissipation (P)
or
5.4.4.1.2 Maximum voltage supply (V)

– 14 – IEC 62007-1:2015  IEC 2015
5.4.5 Thermoelectric cooler (where appropriate)
5.4.5.1 Maximum cooler current under cooling and heating (I )
PE
5.5 Electric and optical characteristics
See Table 3.
Table 3 – Electric and optical characteristics for laser modules with pigtails
Conditions at T = 25 °C for
sub
c
Requirements
or
laser with TEC, T
amb
Characteristics T = 25 °C for laser module Symbol Unit
case
without TEC unless otherwise
Min. Max.
stated
A. Laser diode
Forward voltage V x V
I or Φ specified
F
F e
Threshold current I x x mA
(TH)
Radiant power at threshold I = I φ x µW
F TH e(TH)
Forward current above threshold (for x mA
Φ specified ∆I
e F
laser module without TEC) T = T max. or T max.
case amb
Differential efficacy (for laser module x x
Φ or ∆I specified η
e F d
without TEC)
T = T max. or T max.
case amb
Spectral characteristics
a
Peak emission wavelength x x nm
Φ or ∆I specified λ
e F p
CW-operation
a
Either spectral radiation bandwidth x nm
Φ or ∆I specified λ
e F p
FWHM
CW-operation
or mode spacing and number of x
Φ or ∆I specified CW-operation η
e F
m
longitudinal modes
b
Peak emission wavelength under x x nm
Φ or ∆I specified λ
e F p
modulation modulation condition specified
b
Spectral radiation bandwidth under Φ or ∆I specified λ x
e F p
modulation modulation condition specified
Additional spectral characteristics

a
and/or centroidal wavelength Φ or ∆I specified CW-operation λ x x nm
e F
avg
a
and/or spectral radiation r.m.s. Φ or ∆I specified ∆λ x nm
e F rms
bandwidth
or mode spacing and number of Φ or ∆I specified x
η
e F
m
longitudinal modes
b
or central wavelength under x x nm
Φ or ∆I specified λ
e F
modulation modulation condition specified
b
or spectral radiation r.m.s. bandwidth x nm
Φ or ∆I specified ∆λ
e F rms
under modulation modulation condition specified
Single spectral mode laser module under specified direct modulation
Spectral mode width x nm
Φ or ∆I specified ∆λ
e F L
modulation condition specified
Side-mode suppression ratio SMSR x dB
Φ or ∆I specified
e F
modulation condition specified
Spectral shift
Spectral shift for module with TEC ∆I , ∆I , φ , φ ∆λ x nm
F1 F2 e1 e2 c
a a
or T ,
Spectral shift for laser module T ∆λ x nm
amb case
c
b b
without TEC T or T
amb case
Transient parameters
Conditions at T = 25 °C for
sub
c
Requirements
laser with TEC, T or
amb
Characteristics T = 25 °C for laser module Symbol Unit
case
without TEC unless otherwise
Min. Max.
stated
t ,
Rise time, Bias current ∆I or φ x s
r
F e
fall time input pulse current t x s
f
width and duty cycle specified
and/or
Turn-on time, Bias current ∆I or ϕ t ,  x s
F on
e
turn-off time t x s
input pulse current
off
width and duty cycle specified
Cut-off frequency Φ or ∆I specified f x x Hz
F c
e
Carrier-to-noise ratio C/N x dB
∆I or Φ , ∆f, f , m and f specified
F m 0
e
B. Monitor photodiode
Dark current I x
Φ = 0 µA
r(0)
e
V specified
R
Reverse current under optical Φ or ∆I specified I x x
µA
F R(e)
e
radiation
V specified
R
Diode capacitance or rise/fall time
Either diode capacitance V and f specified C x pF
R tot
or
Φ or ∆I specified
F
e
rise time, t , x s
V specified
r
R
fall time t
f
Tracking error
Either
Φ or ∆I and V specified, E x
F R R1
e
Temperature range: 25 °C to
T min. or T min.
case amb
or
E x
Φ or ∆I and V specified,
R2
F R
e
Temperature range: 25 °C to
T min. or T min.
case amb
C. Thermistor (where appropriate)
Thermistor current I specified R
Resistance x x Ω
tc
Slope of resistance Thermistor current I specified. x x
∆R/R
tc
Temperature range:
a b
T , T
sub sub
D. TEC current (where appropriate)
TEC current Φ or ∆I specified, I x A
F PE
e
Temperature range: T min. or
case
T max.
case
TEC voltage Φ or ∆I specified, V x V
PE
e F
Temperature range: T or
case
T min. and max.
amb
a
CW-operation.
b
In modulation.
c
x represents the value to be specified.

5.6 Supplementary information
5.6.1 DC forward current of the laser diode corresponding to ϕ
eoo
NOTE ϕ is the radiant power value of the laser chip on submount, representative of the performance and

eoo
reliability of devices manufactured using the same technology and submitted to the same quality assurance
procedures.
– 16 – IEC 62007-1:2015  IEC 2015
5.6.2 Response time of the thermistor temperature to the change of cooler current (where
appropriate)
5.6.3 Thermal resistance between laser diode junction and case (without cooler): R
thj-c
5.6.4 s parameter
5.7 Hazards
See IEC 60825.
6 PIN photodiodes for fibre optic systems or subsystems
6.1 Type
Ambient-rated or case-rated PIN photodiodes with or without optical fibre pigtail for fibre optic
systems or subsystems
6.2 Semiconductor materials
Si, Ge, InGaAs, etc.
6.3 Details of outline and encapsulation
6.3.1 IEC and/or national reference number of outline drawing
6.3.2 Method of encapsulation: glass/metal/plastic/other
6.3.3 Terminal identification and indication of any electrical connection between a terminal
and the case
6.3.4 Characteristics of the optical port: relative orientation to mechanical axis, relative
position to mechanical axis, area, numerical aperture
6.3.5 For devices with pigtail: information on the pigtail fibre, type of fibre, kind of
protection, connector, length
6.3.6 Information on the heat sink of the package

6.4 Limiting values (absolute maximum ratings) over the operating temperature range,
unless otherwise stated
See Table 4.
Table 4 – Limiting values for PIN photodiodes
a
Requirements
Characteristics Symbol Unit
Min. Max.
T
Storage temperature x x °C
stg
Temperature
either ambient temperature T x x °C
amb
or case temperature T x x °C
case
Soldering temperature at maximum soldering time and T x °C
sld
minimum distance to case specified
Reverse voltage V x V
R
Power dissipation P x W
tot
Radiant power on the sensitive area x W
Φ
e
For devices with pigtail:
Bend radius of pigtail (at specified distance from the case) r x mm(cm)
Shock  x m/s , s
Vibration  x m/s , Hz
Tensile force on devices with pigtail:
Untight structure:
– Tensile force on fibre along its axis
F x N
– Tensile force on cladding along its axis
F
x N
Tight structure:
– Tensile force on pigtail along its axis
F x N
a
x represents the value to be specified.

– 18 – IEC 62007-1:2015  IEC 2015
6.5 Electrical and optical characteristics
See Table 5.
Table 5 – Electrical and optical characteristics for PIN photodiodes
c
Conditions at Requirements
Characteristics T or T = 25 °C Symbol Unit
amb case
Min. Max.
unless otherwise stated
Dark current
a
Dark current I x µA
V specified, Φ = 0
R(D)
R e
Dark current at high temperature
V specified, Φ = 0
b
R e
I x
µA
R(D)
T or T specified
amb case
Total capacitance V , f specified, Φ = 0 C x pF
R
e tot
Noise current I x
V , I , f , ∆f , R , λ , ∆λ µA
n
R R(e) 0 N L p
specified
For devices without pigtail:
a
Sensitivity along the specified S , S x x A/W
V , λ , ∆λ, Φ specified
FD
R p e
mechanical axis
Spatial uniformity of sensitivity V , λ , ∆λ or Φ specified ∆S x
R p e
(where appropriate)
For devices with pigtail:
a
Sensitivity S , S x x
V , λ , ∆λ, Φ specified
FD
R p e
Bandwidth   GHz
either V , λ , ∆λ, pulse base Φ ,
R p e1
pulse top Φ , R specified
e2 L
Switching time:
– Rise time t x s
r
– Fall time t x s
f
– Delay times (where appropriate) t , t x s
d(on) d(off)
– Storage time t x s
s
or
Cut-off frequency f x Hz
V , λ , ∆λ, Φ , R specified
c
R p e L
NOTE The specified voltage V is the same for all the characteristics, unless otherwise stated.
R
a
Where appropriate.
b
Term and/or letter symbol under consideration.
c
x represents the value to be specified.

6.6 Supplementary information
6.6.1 Typical curve of dark current versus voltage, at different temperatures
6.6.2 Typical curve of total capacitance versus
...

IEC 62007-1 ®
Edition 3.1 2022-09
CONSOLIDATED VERSION
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
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Semiconductor optoelectronic devices for fibre optic system applications –
Part 1: Specification template for essential ratings and characteristics

Dispositifs optoélectroniques à semiconducteurs pour application dans les
systèmes à fibres optiques –
Partie 1: Modèle de spécification relatif aux valeurs et caractéristiques
essentielles
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IEC 62007-1 ®
Edition 3.1 2022-09
CONSOLIDATED VERSION
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor optoelectronic devices for fibre optic system applications –
Part 1: Specification template for essential ratings and characteristics
Dispositifs optoélectroniques à semiconducteurs pour application dans les
systèmes à fibres optiques –
Partie 1: Modèle de spécification relatif aux valeurs et caractéristiques
essentielles
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.01; 31.260; 33.180.01 ISBN 978-2-8322-5764-7

IEC 62007-1 ®
Edition 3.1 2022-09
CONSOLIDATED VERSION
REDLINE VERSION
VERSION REDLINE
colour
inside
Semiconductor optoelectronic devices for fibre optic system applications –
Part 1: Specification template for essential ratings and characteristics

Dispositifs optoélectroniques à semiconducteurs pour application dans les
systèmes à fibres optiques –
Partie 1: Modèle de spécification relatif aux valeurs et caractéristiques
essentielles
– 2 – IEC 62007-1:2015+AMD1:2022 CSV
 IEC 2022
CONTENTS
FOREWORD . 5
1 Scope . 7
2 Normative references . 7
3 Terms, definitions and abbreviations . 7
3.1 Terms and definitions . 7
3.2 Abbreviations . 9
4 LEDs for fibre optic systems or subsystems . 9
4.1 Type . 9
4.2 Semiconductor materials . 9
4.3 Details of outline and encapsulation . 10
4.4 Limiting values (absolute maximum ratings) over the operating temperature
range, unless otherwise stated . 10
4.5 Electrical and optical characteristics . 11
4.6 Supplementary information . 11
5 Laser module with pigtails . 12
5.1 Type . 12
5.2 Semiconductor . 12
5.2.1 Materials . 12
5.2.2 Structure . 12
5.3 Details of outline and encapsulation . 12
5.4 Limiting values (absolute maximum ratings) over the operating temperature
range, unless otherwise stated . 13
5.4.1 General conditions . 13
5.4.2 Laser diode . 13
5.4.3 Photodiode . 13
5.4.4 Thermal sensor (where appropriate) . 13
5.4.5 Thermoelectric cooler (where appropriate) . 14
5.5 Electric and optical characteristics . 14
5.6 Supplementary information . 16
5.7 Hazards . 16
6 PIN photodiodes for fibre optic systems or subsystems . 16
6.1 Type . 16
6.2 Semiconductor materials . 16
6.3 Details of outline and encapsulation . 16
6.4 Limiting values (absolute maximum ratings) over the operating temperature
range, unless otherwise stated . 17
6.5 Electrical and optical characteristics . 18
6.6 Supplementary information . 18
7 Avalanche photodiodes (APDs) with or without pigtails . 19
7.1 Type . 19
7.2 Semiconductor . 19
7.3 Details of outline and encapsulation . 19
7.4 Limiting values (absolute maximum ratings) over the operating temperature
range, unless otherwise stated . 19
7.5 Electrical and optical characteristics . 19
7.6 Supplementary information . 20

 IEC 2022
8 PIN-TIA modules for fibre optic systems or subsystems . 21
8.1 Type . 21
8.2 Semiconductor materials . 21
8.3 Structure . 21
8.4 Details of outline and encapsulation . 21
8.5 Limiting values (absolute maximum ratings) over the operating temperature
range, unless otherwise stated . 22
8.6 Operating conditions at T = 25 °C, unless otherwise stated . 22
amb
8.7 Electrical and optical characteristics . 23
8.8 Supplementary information . 23
9 APD-TIA modules for fibre optic systems or subsystems. 24
9.1 Type . 24
9.2 Semiconductor materials . 24
9.3 Structure . 24
9.4 Details of outline and encapsulation . 24
9.5 Limiting values (absolute maximum ratings) over the operating temperature
range, unless otherwise stated . 24
9.6 Electrical and optical characteristics . 25
10 Laser diode modules for pumping an optical fibre amplifier . 26
10.1 Type . 26
10.2 Semiconductor materials . 26
10.3 Structure . 26
10.4 Details of outline and encapsulation . 26
10.5 Limiting values (absolute maximum ratings) over the operating temperature
range, unless otherwise stated . 27
10.6 Electrical and optical characteristics . 27
10.7 Supplementary information . 29
10.8 Hazards . 29
11 Optical modulators for digital fibre optic applications . 29
11.1 Type . 29
11.2 Materials . 29
11.3 Structure . 30
11.4 Details of outline and encapsulation . 30
11.5 Limiting values (absolute maximum ratings) . 30
11.6 Electrical and optical characteristics . 31
11.7 Supplementary information . 32
11.8 Hazards . 32
Bibliography . 33

Table 1 – Limiting values for LEDs . 10
Table 2 – Electrical and optical characteristics for LEDs . 11
Table 3 – Electric and optical characteristics for laser modules with pigtails . 14
Table 4 – Limiting values for PIN photodiodes . 17
Table 5 – Electrical and optical characteristics for PIN photodiodes . 18
Table 6 – Electrical and optical characteristics for avalanche photodiodes (APDs) with
or without pigtails . 20
Table 7 – Limiting values for PIN-TIA modules . 22

– 4 – IEC 62007-1:2015+AMD1:2022 CSV
 IEC 2022
Table 8 – Operating conditions for PIN-TIA modules . 22
Table 9 – Electrical and optical characteristics for PIN-TIA modules . 23
Table 10 – Limiting values for APD-TIA modules. 25
Table 11 – Electrical and optical characteristics for APD-TIA modules . 25
Table 12 – Limiting values for laser diode modules for pumping an optical fibre
amplifier . 27
Table 13 – Electrical and optical characteristics for laser diode modules for pumping
an optical fibre amplifier . 28
Table 14 – Limiting values for optical modulators for digital fibre optic applications. 30
Table 15 – Electrical and optical characteristics for optical modulators for digital fibre
optic applications . 31

 IEC 2022
COMMISSION ÉLECTROTECHNIQUE INTERNATIONALE
____________
SEMICONDUCTOR OPTOELECTRONIC DEVICES
FOR FIBRE OPTIC SYSTEM APPLICATIONS –

Part 1: Specification template for essential ratings and characteristics

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent
rights. IEC shall not be held responsible for identifying any or all such patent rights.
This consolidated version of the official IEC Standard and its amendment has been
prepared for user convenience.
IEC 62007-1 edition 3.1 contains the third edition (2015-03) [documents 86C/1256/CDV
and 86C/1283/RVC] and its amendment 1 (2022-09) [documents 86C/1785/CDV and
86C/1811/RVC].
In this Redline version, a vertical line in the margin shows where the technical content is
modified by amendment 1. Additions are in green text, deletions are in strikethrough red
text. A separate Final version with all changes accepted is available in this publication.

– 6 – IEC 62007-1:2015+AMD1:2022 CSV
 IEC 2022
International Standard IEC 62007-1 has been prepared by subcommittee 86C: Fibre optic
systems and active devices, of IEC technical committee 86: Fibre optics.
This third edition constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous
edition.
1) The definitions of some symbols and terms are revised in order to harmonize them with
those in other SC 86C documents.
2) A clause on APD-TIA has been added.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC 62007 series, published under the general title Semiconductor
optoelectronic devices for fibre optic system applications, can be found on the IEC website.
The committee has decided that the contents of the base publication and its amendment will
remain unchanged until the stability date indicated on the IEC web site under webstore.iec.ch
in the data related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct understanding
of its contents. Users should therefore print this document using a colour printer.

 IEC 2022
SEMICONDUCTOR OPTOELECTRONIC DEVICES
FOR FIBRE OPTIC SYSTEM APPLICATIONS –

Part 1: Specification template for essential ratings and characteristics

1 Scope
This part of IEC 62007 is a specification template for essential ratings and characteristics of
the following categories of semiconductor optoelectronic devices to be used in the field of fibre
optic systems and subsystems:
– semiconductor photoemitters;
– semiconductor photoelectric detectors;
– monolithic or hybrid integrated optoelectronic devices and their modules.
This part of IEC 62007 provides a frame for the preparation of detail specifications for the
essential ratings and characteristics.
In using this part of IEC 62007, detail specification writers add but do not delete specification
parameters and/or groups of specification parameters for particular applications.
2 Normative references
The following documents, in whole or in part, are normatively referenced in this document and
are indispensable for its application. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any amendments)
applies.
IEC 60825 (all parts), Safety of laser products
IEC 60747-5-1, Discrete semiconductor devices and integrated circuits – Part 5-1:
Optoelectronic devices – General
IEC 60747-5-4, Semiconductor devices – Part 5-4: Optoelectronic devices – Semiconductor
lasers
IEC 60747-5-6, Semiconductor devices – Part 5-6: Optoelectronic devices – Light emitting
diodes
IEC 60747-5-7, Semiconductor devices – Part 5-7: Optoelectronic devices – Photodiodes and
phototransistors
3 Terms, definitions and abbreviations
3.1 Terms and definitions
For the purposes of this document, the terms and definitions concerning physical concepts,
types of devices, general terms, and ratings and characteristics given in IEC 60747-5-1
IEC 60747-5-4, IEC 60747-5-6 and IEC 60747-5-7 and the following apply.

– 8 – IEC 62007-1:2015+AMD1:2022 CSV
 IEC 2022
3.1.1
PIN photodiode
photodiode with a large intrinsic region sandwiched between P- and N-doped semiconducting
regions used for the detection of optical radiation
[SOURCE: IEC 60050-731-06-29, modified — The note has been deleted.]
3.1.2
avalanche photodiode
APD
photodiode operating with a bias voltage such that the primary photocurrent undergoes
amplification by cumulative multiplication of charge carriers
Note 1 to entry: This note applies to the French language only.
[SOURCE: IEC 60050-731-06-30, modified — The note has been deleted.]
3.1.3
RIN
relative intensity noise
quotient of the radiant power mean square fluctuations < ∆Φ > to the mean square radiant
e
power <Φ > , normalized to a frequency band of unit width
e
Note 1 to entry: RIN is usually expressed in dB/Hz.
2 2
RIN = 10 log {< ∆Φ > (< Φ > × ∆f )}
10 e e
Note 2 to entry: This note applies to the French language only.
3.1.4
∆λ
c
spectral shift
deviation of the peak-emission wavelength at a particular case temperature or a particular
forward current from its value at a specified reference case temperature or a specified reference
forward current, respectively
Note 1 to entry: The specific reference temperature is typically 25 °C.
3.1.5
s
input reflection coefficient
quotient of the high frequency reflected voltage to the high frequency incident voltage
3.1.6
E
tr
tracking error
deviation of the radiant power at a particular case temperature from its value at a specified
reference case temperature
Note 1 to entry: The specific reference temperature is typically 25 °C.
Note 2 to entry: Specifications usually refer to the maximum deviation (absolute value) in two specified temperature
ranges below and above the specified reference case temperature.
Note 3 to entry: The tracking error is usually expressed as a percentage of the radiant power at the reference case
temperature.
 IEC 2022
3.1.7
R
D
R
diode responsivity
responsivity
quotient of the photocurrent I by the radiant power Φ at the optical port of the
p e
photodiode
Note 1 to entry: If no ambiguity is likely to occur, the shorter term and shorter letter symbol may be used.
Note 2 to entry: Photodiode means a complete device such as:
– chip itself;
– packaged component with window or pigtail.
3.1.8
F
e
excess noise factor
noise resulting from the spatial and timing fluctuations of the avalanche carrier multiplication,
defined as the ratio of the noise power at a specified reverse bias to the amplified shot noise of
the photocurrent at a reference reverse bias
Note 1 to entry: The reference reverse voltage should be sufficiently low that no carrier multiplication takes place
but sufficiently large that the device is fully depleted and has achieved its rated speed and responsivity.
3.1.9
P
o
overload
maximum received power of a photodiode for obtaining a given bit error rate
3.2 Abbreviations
APD avalanche photodiode
BH buried heterostructure
CMOS complementary metal-oxide semiconductor
CW continuous wave
FWHM full width at half maximum
HBT heterojunction bipolar transistor
LD laser diode
LED light emitting diode
MQW multi-quantum well
RIN relative intensity noise
TEC thermo-electric cooler
TIA transimpedance amplifier
4 LEDs for fibre optic systems or subsystems
4.1 Type
Ambient-rated or case-rated LED with or without optical fibre pigtail for fibre optic systems or
subsystems
4.2 Semiconductor materials
GaAs, GaAlAs, InGaAs, InP, etc.

– 10 – IEC 62007-1:2015+AMD1:2022 CSV
 IEC 2022
4.3 Details of outline and encapsulation
4.3.1 IEC and/or national reference number of outline drawing
4.3.2 Method of encapsulation: glass/metal/plastic/other
4.3.3 Terminal identification and indication of any electrical connection between a terminal
and the case
4.3.4 Characteristics of the optical port: relative orientation to mechanical axis, relative
position to mechanical axis, area, numerical aperture
4.3.5 For devices with a fibre pigtail: information on the pigtail fibre, kind of protection, con-
nector, length
4.3.6 Information on the heat sink of the package
4.4 Limiting values (absolute maximum ratings) over the operating temperature
range, unless otherwise stated
See Table 1.
Table 1 – Limiting values for LEDs
a
Requirements
Characteristics Symbol Unit
Min. Max.
Storage temperature T x x °C
stg
Temperature:
either ambient temperature T x x °C
amb
or case temperature T x x °C
case
Soldering temperature at maximum soldering time and T x °C
sld
minimum distance to case specified
Reverse voltage V x V
R
Continuous forward current I x mA
F
Derating curve or derating factor
Repetitive peak forward current at specified pulse conditions I
x mA
FRM
(where appropriate)
Derating curve or derating factor (where appropriate)
Power dissipation P x W
tot
Derating curve or derating factor (where appropriate)
For case-rated devices:
Virtual junction temperature (where appropriate) T x °C
vj
For devices with pigtail:
Bend radius of pigtail (at specified distance from the case) r x mm(cm)
Shock  x
m/s , s
Vibration  x
m/s , Hz
Tensile force on devices with pigtail:
Untight structure:
– Tensile force on fibre along its axis F x N
– Tensile force on cladding along its axis F x N
Tight structure:
– Tensile force on pigtail along its axis F x N
a
x represents the value to be specified.

 IEC 2022
4.5 Electrical and optical characteristics
See Table 2.
Table 2 – Electrical and optical characteristics for LEDs
b
Conditions at
Requirements
T or T = 25 °C
Characteristics Symbol Unit
amb case
Min. Max.
unless otherwise stated
Forward voltage V x V
I or Φ specified
F
F e
Reverse current V specified I x mA
R R
Differential resistance I or Φ specified r x Ω
F
e d
Total capacitance V , f specified C x µF
R tot
Noise parameter
a
RIN x dB/Hz
either relative intensity noise I or Φ , f , ∆f specified
F e o N
a
I or Φ , f , ∆f , f , m C/N x dB
or carrier-to-noise ratio
F e c N m
specified
Output parameter
a
either radiant output power I specified (d.c. or pulse, or Φ x mW
x
F e
both)
a
or forward current Φ specified I x mA
x
e F
For devices without pigtail: I or Φ , angle φ specified θ x °
F e
1/2
a
Half-intensity angle
For devices without pigtail: x °
I or Φ , angle φ specified ∆θ
F e
a
Misalignment angle
Spectral radiation bandwidth x nm
I or Φ specified ∆λ
e
F
Bandwidth
either switching times: d.c. current  x s
– rise time input pulse current t x s
r
– fall time pulse width and duty cycle t x s
f
specified
a
t , x s
– delay times
d(on)
t
d(off)
– peak emission wavelengths   nm
or cut-off frequency I or Φ specified f x Hz
e
F c
a
Where appropriate.
b
x represents the value to be specified.

4.6 Supplementary information
4.6.1 Typical curve or coefficient
Provide the curve or coefficient in 4.6.1.1 or 4.6.1.2.

– 12 – IEC 62007-1:2015+AMD1:2022 CSV
 IEC 2022
4.6.1.1 Typical curve or coefficient of radiant power versus temperature and typical curve
of radiant output power versus forward current (d.c. or pulse, as specified)
4.6.1.2 Typical curve or coefficient of radiant intensity versus temperature and typical curve
of radiant intensity versus forward current (d.c. or pulse, as specified)
4.6.2 Typical curve or coefficient of change in peak emission wavelength versus temperature
4.6.3 Typical radiation diagram
4.6.4 Thermal resistance, ambient-rated or case-rated
5 Laser module with pigtails
5.1 Type
The laser module consists of the following basic parts:
– laser diode
– pigtail
– photodiodes
– thermal sensor where appropriate
– TEC element
5.2 Semiconductor
5.2.1 Materials
The laser module consists of the following materials:
– laser diode (e.g. GaAs, GaAlAs, InGaAsP, InP)
– photodiode (e.g. Ge, Si, GaInAs)
– thermal sensor  where appropriate
– TEC element
5.2.2 Structure
Laser diode, e.g. gain guided, index guided, distributed feedback
5.3 Details of outline and encapsulation
5.3.1 IEC and/or national reference number of the outline drawing
5.3.2 Method of encapsulation: glass/metal/plastic/other
5.3.3 Terminal identification and indication of any electrical connection between a terminal
and the case
5.3.4 Information on the pigtail fibre, e.g. type of fibre, kind of protection, connector, length
5.3.5 Information on the heatsinking of the package

 IEC 2022
5.4 Limiting values (absolute maximum ratings) over the operating temperature
range, unless otherwise stated
5.4.1 General conditions
5.4.1.1 Minimum and maximum storage temperatures (T )
stg
)
5.4.1.2 Minimum and maximum operating case temperatures (T
case
)
5.4.1.3 Minimum and maximum operating submount temperature (T
sub
5.4.1.4 Maximum soldering temperature (soldering time and minimum distance to case) (T )
sld
5.4.1.5 Minimum bend radius of pigtail (at specified distance from the case) (r)
5.4.1.6 Shock (maximum acceleration and pulse duration)
5.4.1.7 Vibration (maximum acceleration and frequency range)
5.4.1.8 Tensile force along cable axis
5.4.1.8.1 Untight structure
– Maximum tensile force on fibre (F)
– Maximum tensile force on cable (F)
5.4.1.8.2 Tight structure
– Maximum tensile force on cable (F)
5.4.2 Laser diode
For laser module without TEC, derating curve or derating factor shall be given for one of the
parameters 5.4.2.2 to 5.4.2.5. For laser module with TEC, T = 25 °C.
sub
5.4.2.1 Maximum reverse voltage (V )
R
5.4.2.2 Maximum continuous forward current (I )
F
5.4.2.3 Maximum continuous radiant power (ϕ )
e
5.4.2.4 Maximum pulsed forward current at stated frequency and pulse duration (I )
FP
5.4.2.5 Maximum pulsed radiant power at stated frequency and pulse duration (ϕ )
ep
5.4.3 Photodiode
5.4.3.1 Maximum reverse voltage (V )
R
5.4.3.2 Maximum forward current (I )
F
5.4.4 Thermal sensor (where appropriate)
5.4.4.1 Maximum ratings
5.4.4.1.1 Maximum power dissipation (P)
or
5.4.4.1.2 Maximum voltage supply (V)

– 14 – IEC 62007-1:2015+AMD1:2022 CSV
 IEC 2022
5.4.5 Thermoelectric cooler (where appropriate)
5.4.5.1 Maximum cooler current under cooling and heating (I )
PE
5.5 Electric and optical characteristics
See Table 3.
Table 3 – Electric and optical characteristics for laser modules with pigtails
Conditions at T = 25 °C for
sub
c
Requirements
laser with TEC, T or
amb
Characteristics T = 25 °C for laser module Symbol Unit
case
without TEC unless otherwise
Min. Max.
stated
A. Laser diode
Forward voltage I or Φ specified V x V
F e F
Threshold current I x x mA
(TH)
Radiant power at threshold I = I x
φ µW
F TH
e(TH)
Forward current above threshold (for x mA
Φ specified ∆I
e F
laser module without TEC)
T = T max. or T max.
case amb
Differential efficacy (for laser module x x
Φ or ∆I specified η
e F d
without TEC)
T = T max. or T max.
case amb
Spectral characteristics
a
Peak emission wavelength x x nm
Φ or ∆I specified λ
e F p
CW-operation
a
Either spectral radiation bandwidth
Φ or ∆I specified x nm
λ
e F
p
FWHM
CW-operation
or mode spacing and number of x
Φ or ∆I specified CW-operation η
e F
m
longitudinal modes
b
Peak emission wavelength under
Φ or ∆I specified x x nm
λ
e F
p
modulation
modulation condition specified
b
Spectral radiation bandwidth under Φ or ∆I specified x
λ
e F p
modulation
modulation condition specified
Additional spectral characteristics
a
and/or centroidal wavelength Φ or ∆I specified CW-operation x x nm
λ
e F
avg
a
and/or spectral radiation r.m.s. Φ or ∆I specified x nm
∆λ
e F
rms
bandwidth
or mode spacing and number of x
Φ or ∆I specified η
e F
m
longitudinal modes
b
or central wavelength under
Φ or ∆I specified x x nm
λ
e F
modulation
modulation condition specified
b
or spectral radiation r.m.s. bandwidth x nm
Φ or ∆I specified ∆λ
e F rms
under modulation
modulation condition specified
Single spectral mode laser module under specified direct modulation
Spectral mode width Φ or ∆I specified ∆λ x nm
e F L
modulation condition specified
Side-mode suppression ratio SMSR x dB
Φ or ∆I specified
e F
modulation condition specified
Spectral shift
Spectral shift for module with TEC , ∆I , φ , φ ∆λ x nm
∆I
F1 F2 e1 e2 c
 IEC 2022
Conditions at T = 25 °C for
sub
c
Requirements
laser with TEC, T or
amb
Characteristics T = 25 °C for laser module Symbol Unit
case
without TEC unless otherwise
Min. Max.
stated
a a
Spectral shift for laser module
∆λ x nm
T or T ,
c
amb case
without TEC
b b
T or T
amb case
Transient parameters
Rise time, Bias current ∆I or φ t , x s
r
F e
fall time x s
input pulse current t
f
width and duty cycle specified
and/or
Turn-on time, Bias current ∆I or ϕ t ,  x s
F on
e
turn-off time x s
t
input pulse current
off
width and duty cycle specified
Cut-off frequency f x x Hz
Φ or ∆I specified
c
F
e
Carrier-to-noise ratio ∆I or Φ , ∆f, f , m and f specified C/N x dB
F m 0
e
B. Monitor photodiode
Dark current Φ = 0 I x µA
r(0)
e
V specified
R
Reverse current under optical
Φ or ∆I specified I x x µA
F R(e)
e
radiation
V specified
R
Diode capacitance or rise/fall time
Either diode capacitance V and f specified C x pF
R tot
or
Φ or ∆I specified
F
e
rise time, t , x s
r
V specified
R
fall time
t
f
Tracking error
Either
E x
Φ or ∆I and V specified,
R1
F R
e
Temperature range: 25 °C to
T min. or T min.
case amb
or
Φ or ∆I and V specified, E x
F R R2
e
Temperature range: 25 °C to
T min. or T min.
case amb
C. Thermistor (where appropriate)
Resistance Thermistor current I specified R x x Ω
tc
Slope of resistance Thermistor current I specified. x x
∆R/R
tc
Temperature range:
a b
T , T
sub sub
D. TEC current (where appropriate)
TEC current I x A
Φ or ∆I specified,
PE
F
e
Temperature range: T min. or
case
T max.
case
TEC voltage Φ or ∆I specified, V x V
PE
e F
Temperature range: T or
case
T min. and max.
amb
– 16 – IEC 62007-1:2015+AMD1:2022 CSV
 IEC 2022
Conditions at T = 25 °C for
sub
c
Requirements
laser with TEC, T or
amb
Characteristics T = 25 °C for laser module Symbol Unit
case
without TEC unless otherwise
Min. Max.
stated
a
CW-operation.
b
In modulation.
c
x represents the value to be specified.

5.6 Supplementary information
5.6.1 DC forward current of the laser diode corresponding to ϕ
eoo
NOTE ϕ is the radiant power value of the laser chip on submount, representative of the performance and reliability

eoo
of devices manufactured using the same technology and submitted to the same quality assurance procedures.
5.6.2 Response time of the thermistor temperature to the change of cooler current (where
appropriate)
5.6.3 Thermal resistance between laser diode junction and case (without cooler): R
thj-c
5.6.4 s parameter
5.7 Hazards
See IEC 60825.
6 PIN photodiodes for fibre optic systems or subsystems
6.1 Type
Ambient-rated or case-rated PIN photodiodes with or without optical fibre pigtail for fibre optic
systems or subsystems
6.2 Semiconductor materials
Si, Ge, InGaAs, etc.
6.3 Details of outline and encapsulation
6.3.1 IEC and/or national reference number of outline drawing
6.3.2 Method of encapsulation: glass/metal/plastic/other
6.3.3 Terminal identification and indication of any electrical connection between a terminal
and the case
6.3.4 Characteristics of the optical port: relative orientation to mechanical axis, relative
position to mechanical axis, area, numerical aperture
6.3.5 For devices with pigtail: information on the pigtail fibre, type of fibre, kind of protection,
connector, length
6.3.6 Information on the heat sink of the package

 IEC 2022
6.4 Limiting values (absolute maximum ratings) over the operating temperature
range, unless otherwise stated
See Table 4.
Table 4 – Limiting values for PIN photodiodes
a
Requirements
Characteristics Symbol Unit
Min. Max.
Storage temperature T x x °C
stg
Temperature
T
either ambient temperature x x °C
amb
or case temperature T x x °C
case
Soldering temperature at maximum soldering time and T x °C
sld
minimum distance to case specified
Reverse voltage V x V
R
Power dissipation P x W
tot
Radiant power on the sensitive area Φ x W
e
For devices with pigtail:
Bend radius of pigtail (at specified distance from the case) r x mm(cm)
Shock  x
m/s , s
Vibration  x
m/s , Hz
Tensile force on devices with pigtail:
Untight structure:
– Tensile force on fibre along its axis F x N
– Tensile force on cladding along its axis
F x N
Tight structure:
– Tensile force on pigtail along its axis
F x N
a
x represents the value to be specified.

– 18 – IEC 62007-1:2015+AMD1:2022 CSV
 IEC 2022
6.5 Electrical and optical characteristics
See Table 5.
Table 5 – Electrical and optical characteristics for PIN photodiodes
c
Conditions at
Requirements
T or T = 25 °C
Characteristics Unit
Symbol
amb case
Min. Max.
unless otherwise stated
Dark current
a
µA
Dark curre
...