IEC 60747-16-1:2001/AMD2:2017

Amendment 2 - Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers

Amendement 2 - Dispositifs à semiconducteurs - Partie 16-1: Circuits intégrés hyperfréquences - Amplificateurs

General Information

• Status: Published
• Publication Date: 14-Feb-2017
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: SC 47E - Discrete semiconductor devices
• Drafting Committee: WG 2 - TC 47/SC 47E/WG 2
• Current Stage: PPUB - Publication issued
• Start Date: 01-Mar-2017
• Completion Date: 15-Feb-2017

Relations

• Amends: IEC 60747-16-1:2001 - Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers
• Effective Date: 05-Sep-2023

Standards Content (Sample)

IEC 60747-16-1 ®
Edition 1.0 2017-02
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
A MENDMENT 2
AM ENDEMENT 2
Semiconductor devices –
Part 16-1: Microwave integrated circuits – Amplifiers

Dispositifs à semiconducteurs –
Partie 16-1: Circuits intégrés hyperfréquences – Amplificateurs

IEC 60747-16-1:2001-11/AMD2:2017-02(en-fr)

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IEC 60747-16-1 ®
Edition 1.0 2017-02
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
A MENDMENT 2
AM ENDEMENT 2
Semiconductor devices –
Part 16-1: Microwave integrated circuits – Amplifiers

Dispositifs à semiconducteurs –

Partie 16-1: Circuits intégrés hyperfréquences – Amplificateurs

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.99 ISBN 978-2-8322-3873-8

– 2 – IEC 60747-16-1:2001/AMD2:2017
 IEC 2017
FOREWORD
This amendment has been prepared by subcommittee 47E: Discrete semiconductor devices,
of IEC technical committee 47: Semiconductor devices.
The text of this amendment is based on the following documents:
CDV Report on voting
47E/500/CDV 47E/518/RVC
Full information on the voting for the approval of this amendment can be found in the report
on voting indicated in the above table.
_____________
CONTENTS
Replace the titles of Clause 3, Subclauses 5.7 and 5.18 with the following new titles:
3 Terms and definitions
5.7 Limiting output power (P ) and limiting output power flatness (∆P )
o(ltg) o(ltg)
5.18 Power added efficiency (η )
add
Replace the titles of Subclauses 5.11, 5.19, 5.21, including the amendments brought to them
by Amendment 1, with the following new titles:
5.11 Intermodulation distortion (two-tone) (P /P )
n 1
5.19 nth order harmonic distortion ratio (P /P )
nth 1
5.21 Spurious intensity under specified load VSWR (P /P )
sp o
Replace the title of Subclause 5.22 added by Amendment 1 with the following new title:
5.22 Adjacent channel power ratio (P /P )
adj o(mod)
2 Normative references
Replace the existing references IEC 60617, IEC 60747-1, IEC 60747-4, IEC 61340-5-1 and
IEC 61340-5-2 including the amendments brought to them by Amendment 1 as follows:
IEC 60617, Graphical symbols for diagrams (available at: )
IEC 60747-1:2006, Semiconductor devices – Part 1: General
IEC 60747-1:2006/AMD1:2010
IEC 60747-4:2007, Semiconductor devices – Discrete devices – Part 4: Microwave diodes and
transistors
IEC 60747-4:2007/AMD1:2017
IEC 61340-5-1, Electrostatics – Part 5-1: Protection of electronic devices from electrostatic
phenomena – General requirements

 IEC 2017
IEC TR 61340-5-2, Electrostatics – Part 5-2: Protection of electronic devices from
electrostatic phenomena – User guide
Replace the existing reference IEC 60748-3 as follows:
IEC 60748-3:1986, Semiconductor devices – Integrated circuits – Part 3: Analogue integrated
circuits
IEC 60748-3:1986/AMD1:1991
IEC 60748-3:1986/AMD2:1994
Delete the existing reference to IEC 60747-7:2000:
IEC 60747-7:2000, Semiconductor devices – Part 7: Bipolar transistors
Delete the references IEC 60747-16-2 and IEC 60747-16-4 added by Amendment 1:
IEC 60747-16-2:2001, Semiconductor devices – Part 16-2: Microwave integrated circuits –
Frequency prescalers
IEC 60747-16-4:2004, Semiconductor devices – Part 16-4: Microwave integrated circuits –
Switches
Add the new reference IEC 60050-702:
IEC 60050-702, International Electrotechnical Vocabulary – Chapter 702: Oscillations, signals
and related devices (available at: http://www.electropedia.org)
3 Terminology
Replace the clause title with the following new title and introductory paragraph:
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
Replace entries 3.7, 3.14, and 3.16, including the amendments brought to them by
Amendment 1, with the following new entries:
3.7
intermodulation distortion
P /P
n 1
ratio of the nth order component of the output power to the fundamental component of the
output power
Note 1 to entry: The abbreviation “IMD ” is in common use for the nth order intermodulation distortion.
n
SOURCE: IEC 60747-4:2007/AMD1:2017, 7.2.19.

3.14
nth order harmonic distortion ratio
/P
P
nth 1
ratio of the power of the nth order harmonic component measured at the output port of the
device to the power of the fundamental frequency measured at the output port

– 4 – IEC 60747-16-1:2001/AMD2:2017
 IEC 2017
3.16
spurious intensity under specified load VSWR
P /P
sp o
ratio of the power of the maximum spurious power measured at the output port of the device
to the fundamental frequency measured at the output port under specified load VSWR

Replace entries 3.17 and 3.21 added by Amendment 1 with the following new entries:
3.17
output power
P
o
RF power measured at the output port
SOURCE: IEC 60747-4:2007/AMD1:2017, 7.2.2.
3.21
adjacent channel power ratio
P /P
adj o(mod)
ratio of the total output power in a specified frequency band away from a specified carrier
signal frequency to the total power in a specified carrier signal frequency band, when a
modulation signal is supplied
Replace, in entry 3.9 as modified by Amendment 1, the words "see 3.5.2.1 of IEC 60747-7" by
"see 7.4.3.10.2.2 of IEC 60747-4:2007".
Replace, in entry 3.10, the words "see 3.5.2.2 of IEC 60747-7" by "see 7.4.3.10.2.2 of
IEC 60747-4:2007".
Replace, in entry 3.11, the words "see 3.5.2.4 of IEC 60747-7" by "see 7.4.3.10.2.2 of
IEC 60747-4:2007".
4.4.2 Temperatures
Replace the existing item 1), with the following new item:
1) Operating temperature (ambient or reference-point temperature)

4.6.2 Dynamic or r.f. characteristics
Replace parameters 4.6.2.10, 4.6.2.20, 4.6.2.22 and 4.6.2.23 including the amendments
brought to them by Amendment 1 with the following new parameters:
Types
Parameters Min. Max.
A B C D
4.6.2.10 Intermodulation distortion +  + +
4.6.2.20 nth order harmonic distortion ratio +  +
(where appropriate) (note 2)
4.6.2.22 Spurious intensity under specified load VSWR +  +
(where appropriate) (note 2)
4.6.2.23 Adjacent channel power ratio (where appropriate) +  +

 IEC 2017
5.7 Limiting output power (P )
o(ltg)
Replace the existing title and first line with the following new title:
5.7 Limiting output power (P ) and limiting output power flatness (∆P )
o(ltg) o(ltg)
5.11 Intermodulation distortion (two-tone) (P /P )
1 n
Replace the existing title including the amendments brought to it by Amendment 1 with the
following new title:
5.11 Intermodulation distortion (two-tone) (P /P )
n 1
5.11.3 Principle of measurement
/P " with
Replace, in the last paragraph of this subclause as modified by Amendment 1 "P
1 n
"P /P ".
n 1
Replace Equation (16) as modified by Amendment 1 as follows:
P /P = P – P = P – P (16)
n 1 n 1 c b
5.18 Power added efficiency
Replace the existing title with the following new title:
5.18 Power added efficiency (η )
add
5.19 nth order harmonic distortion ratio (P /P )
1 nth
Replace the existing title including the amendments brought to it by Amendment 1 with the
following new title:
5.19 nth order harmonic distortion ratio (P /P )
nth 1
5.19.3 Principle of measurement
Replace the existing first sentence and Equation (29) including the amendments brought to
them by Amendment 1 as follows:
In the circuit diagram shown in Figure 9, nth order harmonic distortion ratio P /P in dBc is
nth 1
derived from Equation (29):
P /P = P – P (29)
nth 1 nth 1
– 6 – IEC 60747-16-1:2001/AMD2:2017
 IEC 2017
5.21 Spurious intensity under specified load VSWR (P /P )
o sp
Replace the existing title including the amendments brought to it by Amendment 1 with the
following new title:
5.21 Spurious intensity under specified load VSWR (P /P )
sp o
5.21.3 Principle of measurement
Replace the existing last sentence and Equation (35) including the amendments brought to
them by Amendment 1 as follows:
The spurious intensity P /P in dBc is defined as follows:
sp o
P /P = P − P (35)
sp o sp o
5.22 Adjacent channel power ratio (P /P )
o(mod) adj
Replace the title of this subclause added by Amendment 1 with the following new title:
5.22 Adjacent channel power ratio (P /P )
adj o(mod)
5.22.3 Principle of measurement
Replace the existing second sentence in the first paragraph as follows:
Adjacent channel power ratio P /P is the ratio of P to P .
adj o(mod) adj o(mod)
Replace the existing second paragraph and Equation (39) as follows:
P /P in dBc is given as the following equations in the circuit of Figure 12.
adj o(mod)
P /P = P − P = P − P (39)
adj o(mod) adj o(mod
...