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IEC 63068-4:2022

(Main)

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence

IEC 63068-4:2022(E) provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical inspection and PL images to enable the detection and categorization of defects in SiC homoepitaxial wafers.

General Information

Status
Published
Publication Date
26-Jul-2022
ICS
31.080.99 - Other semiconductor devices
Technical Committee
TC 47 - Semiconductor devices
Drafting Committee
WG 5 - TC 47/WG 5
Current Stage
PPUB - Publication issued
Start Date
30-Aug-2022
Completion Date
27-Jul-2022
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IEC 63068-4:2022 - Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescenceIEC 63068-4:2022 - Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence
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IEC 63068-4:2022 - Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence
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IEC 63068-4
®

Edition 1.0 2022-07
INTERNATIONAL
STANDARD



Semiconductor devices – Non-destructive recognition criteria of defects in
silicon carbide homoepitaxial wafer for power devices –
Part 4: Procedure for identifying and evaluating defects using a combined
method of optical inspection and photoluminescence
IEC 63068-4:2022-07(en)

---------------------- Page: 1 ----------------------
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---------------------- Page: 2 ----------------------
IEC 63068-4

®


Edition 1.0 2022-07




INTERNATIONAL



STANDARD



















Semiconductor devices – Non-destructive recognition criteria of defects in

silicon carbide homoepitaxial wafer for power devices –

Part 4: Procedure for identifying and evaluating defects using a combined

method of optical inspection and photoluminescence
























INTERNATIONAL

ELECTROTECHNICAL


COMMISSION





ICS 31.080.99 ISBN 978-2-8322-4307-7




  Warning! Make sure that you obtained this publication from an authorized distributor.


® Registered trademark of the International Electrotechnical Commission

---------------------- Page: 3 ----------------------
– 2 – IEC 63068-4:2022 © IEC 2022
CONTENTS
FOREWORD . 4
INTRODUCTION . 6
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 7
4 Principle . 7
5 Requirements . 8
5.1 General . 8
5.2 Parameter settings . 9
5.2.1 General . 9
5.2.2 Parame
...

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