IEC 63068-4:2022

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence

IEC 63068-4:2022(E) provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical inspection and PL images to enable the detection and categorization of defects in SiC homoepitaxial wafers.

General Information

• Status: Published
• Publication Date: 26-Jul-2022
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: TC 47 - Semiconductor devices
• Drafting Committee: WG 5 - TC 47/WG 5
• Current Stage: PPUB - Publication issued
• Start Date: 30-Aug-2022
• Completion Date: 27-Jul-2022

Standards Content (Sample)

IEC 63068-4 ®
Edition 1.0 2022-07
INTERNATIONAL
STANDARD
Semiconductor devices – Non-destructive recognition criteria of defects in
silicon carbide homoepitaxial wafer for power devices –
Part 4: Procedure for identifying and evaluating defects using a combined
method of optical inspection and photoluminescence
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IEC 63068-4 ®
Edition 1.0 2022-07
INTERNATIONAL
STANDARD
Semiconductor devices – Non-destructive recognition criteria of defects in

silicon carbide homoepitaxial wafer for power devices –

Part 4: Procedure for identifying and evaluating defects using a combined

method of optical inspection and photoluminescence

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99 ISBN 978-2-8322-4307-7

– 2 – IEC 63068-4:2022 © IEC 2022
CONTENTS
FOREWORD . 4
INTRODUCTION . 6
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 7
4 Principle . 7
5 Requirements . 8
5.1 General . 8
5.2 Parameter settings . 9
5.2.1 General . 9
5.2.2 Parameter setting process . 10
5.3 Procedure . 10
5.4 Image evaluation . 10
5.4.1 General . 10
5.4.2 Mean width of planar and volume defects . 10
5.4.3 Evaluation process . 11
5.5 Precision . 11
5.6 Test report . 11
5.6.1 Mandatory elements . 11
5.6.2 Optional elements . 12
Annex A (informative) Optical inspection and photoluminescence images of defects . 13
A.1 General . 13
A.2 Micropipe . 13
A.3 TSD . 14
A.4 TED . 15
A.5 BPD . 16
A.6 Scratch trace . 17
A.7 Stacking fault . 18
A.8 Propagated stacking fault . 19
A.9 Stacking fault complex . 20
A.10 Polytype inclusion . 21
A.11 Particle inclusion . 22
A.12 Bunched-step segment . 23
A.13 Surface particle . 25

Figure A.1 – Micropipe . 14
Figure A.2 – TSD . 15
Figure A.3 – TED . 16
Figure A.4 – BPD . 17
Figure A.5 – Scratch trace . 18
Figure A.6 – Stacking fault . 19
Figure A.7 – Propagated stacking fault . 20
Figure A.8 – Stacking fault complex . 21
Figure A.9 – Polytype inclusion . 22
Figure A.10 – Particle inclusion. 23

Figure A.11 – Bunched-step segment . 24
Figure A.12 – Surface particle . 25

Table 1 – Combination table for identifying defects . 8

– 4 – IEC 63068-4:2022 © IEC 2022
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
NON-DESTRUCTIVE RECOGNITION CRITERIA OF DEFECTS IN SILICON
CARBIDE HOMOEPITAXIAL WAFER FOR POWER DEVICES –

Part 4: Procedure for identifying and evaluating defects using a combined
method of optical inspection and photoluminescence

FOREWORD
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IEC 63068-4 has been prepared by IEC technical committee 47: Semiconductor devices. It is
an International Standard.
The text of this International Standard is based on the following documents:
Draft Report on voting
47/2751/CDV 47/2768/RVC
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.

This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/publications.
A list of all parts in the IEC 63068 series, published under the general title Semiconductor
devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer
for power devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
– 6 – IEC 63068-4:2022 © IEC 2022
INTRODUCTION
Results of evaluating defects on silicon carbide homoepitaxial wafer by a single test method
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