Nanomanufacturing - Key control characteristics - Part 6-7: Graphene - Sheet resistance: van der Pauw method

IEC TS 62607-6-7:2023 establishes a method to determine the key control characteristics sheet resistance RS [measured in ohm per square (Ω/sq)], by the van der Pauw method, vdP.
The sheet resistance RS is derived by measurements of four-terminal electrical resistance performed on four electrical contacts placed on the boundary of the planar sample and calculated with a mathematical expression involving the two resistance measurements.
The measurement range for RS of the graphene samples with the method described in this document goes from 10−2 Ω/sq to 104 Ω/sq.
The method is applicable for CVD graphene provided it is transferred to quartz substrates or other insulating materials (quartz, SiO2 on Si), as well as graphene grown from silicon carbide.
The method is complementary to the in-line four-point-probe method (4PP, IEC 62607-6-8) for what concerns the measurement of the sheet resistance and can be applied when it is possible to reliably place contacts on the sample boundary, avoiding the sample being scratched by the 4PP.
The outcome of the van der Pauw method is independent of the contact position provided the sample is uniform, which is typically not true for graphene at this stage. This document considers the case of samples with non-strictly uniform conductivity distribution and suggests a way to consider the sample inhomogeneity as a component of the uncertainty on RS.

General Information

Status
Published
Publication Date
06-Jun-2023
Current Stage
PPUB - Publication issued
Start Date
12-Jul-2023
Completion Date
07-Jun-2023
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IEC TS 62607-6-7:2023 - Nanomanufacturing - Key control characteristics - Part 6-7: Graphene - Sheet resistance: van der Pauw method Released:6/7/2023
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IEC TS 62607-6-7 ®
Edition 1.0 2023-06
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –
Part 6-7: Graphene – Sheet resistance: van der Pauw method

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IEC TS 62607-6-7 ®
Edition 1.0 2023-06
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –

Part 6-7: Graphene – Sheet resistance: van der Pauw method

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS  07.120 ISBN 978-2-8322-7114-8

– 2 – IEC TS 62607-6-7:2023  IEC 2023
CONTENTS
FOREWORD . 4
INTRODUCTION . 6
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 7
3.1 General terms . 8
3.5 Key control characteristics measured in accordance with this standard . 9
3.6 Terms related to the measurement method . 10
4 General . 11
4.1 Measurement principle . 11
4.2 Non-uniform samples . 11
4.3 Sample preparation method . 11
4.4 Description of measurement equipment . 11
4.5 Ambient conditions during measurement . 12
4.6 Related standards . 12
5 Measurement procedure . 13
5.1 Calibration of measurement equipment . 13
5.2 Detailed protocol of the measurement procedure . 13
5.3 Settings and precautions for the measurement of R . 14
ij,kl
5.4 Four-terminal resistance measurement accuracy . 15
6 Data analysis and interpretation of results . 16
6.1 General . 16
6.1.1 Calculation of R . 16
S
6.1.2 Further corrections . 16
6.1.3 Expression of uncertainty on R . 16
S
6.2 One measurement configuration . 17
6.3 Multiple measurement configurations . 18
7 Results to be reported . 18
7.1 Cover sheet . 18
7.2 Sample identification . 18
7.3 Measurement conditions . 18
7.4 Measurement results . 18
Annex A (informative) Effects of ambient conditions on graphene resistance
measurements . 20
A.1 General . 20
A.2 Temperature (T) . 20
A.3 Relative humidity (RH) . 20
Annex B (informative) Experimental example . 21
B.1 Sample . 21
B.2 Ambient conditions. 21
B.3 Instrumentation . 21
B.4 Sampling plan . 22
B.5 Measurement procedure . 23
B.6 Results . 23

Annex C (informative) Other standards related to the measurement of sheet
resistance . 25
Bibliography . 26

Figure 1 – Schematic view of a van der Pauw measurement setup, and a detail of

typical spring-mounted probe . 12
Figure 2 – Schematic view of a typical vdP measurement setup and measurement
sequence . 14
Figure 3 – Schematic representation of a possible sampling plan representation for the
vdP method . 19
Figure B.1 – CVD graphene on quartz . 21
Figure B.2 – Schematic lateral view of the multi-terminal fixture . 22
Figure B.3 – Sampling plan used for the present example . 22

Table 1 – Example of measurable values for R , and the corresponding measurement
S
settings and type-B uncertainty, when using a current source Keithley 2602B System
SourceMeter® and a HP 34420 Nano Volt / Micro Ohm Meter (1y calibration
specifications) . 15
Table B.1 – Measured values for R (p) and R (p) using a current source
AB,CD BC,DA
Keithley 2602B and a voltmeter HP 34461 (1y stability specifications) . 23
Table B.2 – Measured values for R (p) and corresponding uncertainty values using a
S
current source Keithley 2602B and a voltmeter HP 34461 (1y stability specifications) . 23
Table B.3 – Summary of the uncertainty contributions to R . 24
S
– 4 – IEC TS 62607-6-7:2023  IEC 2023
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
NANOMANUFACTURING –
KEY CONTROL CHARACTERISTICS –
Part 6-7: Graphene – Sheet resistance: van der Pauw method

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IEC TS 62607-6-7
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