IEC TS 62607-6-11:2022
(Main)Nanomanufacturing - Key control characteristics - Part 6-11: Graphene - Defect density: Raman spectroscopy
Nanomanufacturing - Key control characteristics - Part 6-11: Graphene - Defect density: Raman spectroscopy
IEC TS 62607-6-11:2022(EN) establishes a standardized method to determine the key control characteristic
• defect density nD
of graphene films grown by chemical vapour deposition as well as exfoliated graphene flakes by
• Raman spectroscopy
General Information
Standards Content (Sample)
IEC TS 62607-6-11 ®
Edition 1.0 2022-02
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –
Part 6-11: Graphene – Defect density: Raman spectroscopy
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IEC TS 62607-6-11 ®
Edition 1.0 2022-02
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –
Part 6-11: Graphene – Defect density: Raman spectroscopy
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 07.120 ISBN 978-2-8322-1071-9
– 2 – IEC TS 62607-6-11:2022 © IEC 2022
CONTENTS
FOREWORD . 4
INTRODUCTION . 6
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 7
3.1 General terms . 8
3.2 Key control characteristics measured in accordance with this document . 9
3.3 Terms related to the measurement method described in this document . 9
4 General . 10
4.1 Measurement principle . 10
4.2 Sample preparation method . 11
4.3 Description of test equipment . 11
4.4 Calibration standards, alignment and peak fitting . 12
4.5 Ambient conditions. 12
5 Measurement procedure . 12
5.1 Description of the measurement procedure . 12
5.2 Measurement accuracy . 13
6 Data analysis and interpretation of results . 13
7 Sampling plan . 14
8 Test report . 14
8.1 General . 14
8.2 Sample identification . 14
8.3 Test conditions . 14
8.4 Measurement specific information . 15
8.5 Test results . 15
Annex A (informative) Format of the test report . 16
Annex B (normative) Sampling plan . 19
B.1 General . 19
B.2 Sampling plan depending on substrate geometry . 19
B.2.1 Circular substrates . 19
B.2.2 Square substrates . 20
B.2.3 Irregular shaped substrates . 21
B.2.4 Coordinate system . 21
Annex C (informative) Recommendations for wavelengths depending on substrate . 23
Annex D (informative) Application examples . 24
D.1 Raman spectra within stage 1 of the three-stage model for amorphization
with increasing defect density . 24
D.2 Calculation of the defect density from I(D)/I(G) on doped graphene . 25
D.3 Estimation of the defect level of a doped sample. 26
Bibliography . 27
Figure 1 – Three-stage classification to describe graphene lattice disorder . 6
Figure 2 – Raman spectra of pristine (top) and defective graphene (bottom) [1] . 10
Figure 3 – Schematic of micro-Raman setup used for graphene characterization . 12
Figure 4 – E [I(D)/I(G)] as a function of L . 14
L D
Figure B.1 – Schematic of sample plan for circular substrates . 19
Figure B.2 – Schematic of sample plan for square substrates . 20
Figure B.3 – Example sampling plan for irregular sample . 21
Figure B.4 – Coordinate system applied to the measurement results in the test report . 22
Figure D.1 – Representative Raman spectra of ion-bombarded graphene samples. . 24
Figure D.2 – I(D)/I(G) as a function of charge carrier concentration . 25
Figure D.3 – Raman spectra of a defective graphene sample at doping level of a) E ≤
F
100 meV and b) E ~ 500 meV [11] . 26
F
Table A.1 – Product identification (in accordance with IEC 62565-3-1) . 16
Table A.2 – General material description (in accordance with IEC 62565-3-1). 16
Table A.3 – Measurement related information . 17
Table A.4 – Measurement results . 17
Table A.5 – Colour map of KCC . 18
Table B.1 – Sampling plan for circular substrates . 20
Table B.2 – Sampling plan for square sample . 21
Table C.1 – Recommended laser wavelength depending on used substrate . 23
– 4 – IEC TS 62607-6-11:2022 © IEC 2022
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
NANOMANUFACTURING – KEY CONTROL CHARACTERISTICS –
Part 6-11: Graphene – Defect density: Raman spectroscopy
FOREWORD
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IEC TS 62607-6-11 has been prepared by IEC technical committee 113, Nanotechnology for
electrotechnical products and systems. It is a Technical Specification.
The text of this Technical Specification is based on the following documents:
Draft Report on voting
113/591/DTS 113/626/RVDTS
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this Technical Specification is English.
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/standardsdev/publications.
A list of all parts in the IEC TS 62607 series, published under
...
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