IEC TS 62607-8-3:2023

Nanomanufacturing - Key control characteristics - Part 8-3: Nano-enabled metal-oxide interfacial devices - Analogue resistance change and resistance fluctuation: Electrical resistance measurement

IEC TS 62607-8-3:2023 This part of IEC 62607, which is a Technical Specification, specifies a measurement protocol to determine the key control characteristics
- analogue resistance change, and
- resistance fluctuation
for nano-enabled metal-oxide interfacial devices by
- electrical resistance measurement.
Analogue resistance change as a function of applied voltage pulse is measured in metal-oxide interfacial devices. The linearity in the relationship of the variation of conductance and the pulse number is evaluated using the parameter fitting. The parameter of the resistance fluctuation is simultaneously computed in the fitting process.
- This method is applicable for evaluating computing devices composed of the metal-oxide interfacial device, for example, product-sum circuits, which record the learning process as the analogue resistance change.

General Information

• Status: Published
• Publication Date: 19-Oct-2023
• ICS: 07.030 - Physics. Chemistry
• ICS: 07.120 - Nanotechnologies
• Technical Committee: TC 113 - Nanotechnology for electrotechnical products and systems
• Drafting Committee: WG 3 - TC 113/WG 3
• Current Stage: PPUB - Publication issued
• Start Date: 20-Oct-2023
• Completion Date: 17-Jul-2023

Overview - IEC TS 62607-8-3:2023 (Analogue resistance change & resistance fluctuation)

IEC TS 62607-8-3:2023 is a Technical Specification in the IEC 62607 nanomanufacturing series that defines a standardized measurement protocol for assessing two key control characteristics of nano-enabled metal‑oxide interfacial devices: analogue resistance change and resistance fluctuation. The document specifies how to perform electrical resistance measurements (DC and pulsed) on a device under test (DUT), how to report device stacking and fabrication details, and how to analyze pulse-driven conductance changes using parameter fitting. The standard enables quantitative evaluation of linearity in conductance change and computes resistance fluctuation (the fitting error) for reproducible device characterization.

Key topics and technical requirements

• Measurement scope
  • Electrical resistance measurement of metal‑oxide interfacial devices under voltage pulses.
  • I–V (DC) characterization plus pulsed stimulus to record analogue resistance changes.
• Data acquisition
  • Use of source-measure units (SMU) and defined experimental procedures to record conductance vs pulse number.
  • Reporting of DUT stacking structure, materials, and fabrication process details.
• Data analysis
  • Parameter fitting to evaluate the relationship between conductance variation and pulse count.
  • Computation of resistance fluctuation, presented as a least-squares error from the fitting process.
  • Assessment of linearity of analogue resistance change (important for predictable device behavior).
• Reporting
  • Standardized reporting templates for measurement sequences, parameters, and post-measurement characterization (as illustrated in the annexed case study).

Practical applications

• Characterizing memristive and other metal‑oxide resistive devices used in:
  • Neuromorphic computing and non‑von Neumann architectures.
  • Product‑sum circuits that record learning processes as analogue resistance changes.
  • Resistive memory and analogue computing blocks in IoT edge devices.
• Facilitates reliable comparison of device performance across research labs and manufacturing sites by providing a reproducible test protocol.

Who should use this standard

• Device researchers and academic labs studying metal‑oxide interfacial phenomena.
• Semiconductor and memory device manufacturers developing nano‑enabled resistive elements.
• Test houses and quality assurance teams performing electrical characterization.
• System designers of neuromorphic hardware and product‑sum circuits seeking device‑level performance metrics.

Related standards

• IEC 62607 series - Nanomanufacturing - Key control characteristics (other parts).
• ISO 80004-1 - Nanotechnologies - Vocabulary (normative reference cited by this TS).

Keywords: IEC TS 62607-8-3, analogue resistance change, resistance fluctuation, metal‑oxide interfacial devices, electrical resistance measurement, nanomanufacturing, parameter fitting, SMU, DUT, neuromorphic computing.

Standards Content (Sample)

IEC TS 62607-8-3 ®
Edition 1.0 2023-10
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key Control Characteristics –
Part 8-3: Nano-enabled metal-oxide interfacial devices – Analogue resistance
change and resistance fluctuation: Electrical resistance measurement

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IEC TS 62607-8-3 ®
Edition 1.0 2023-10
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key Control Characteristics –

Part 8-3: Nano-enabled metal-oxide interfacial devices – Analogue resistance

change and resistance fluctuation: Electrical resistance measurement

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 07.120; 07.030 ISBN 978-2-8322-7640-2

– 2 – IEC TS 62607-8-3:2023 © IEC 2023
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms, definitions, acronyms, and abbreviated terms . 6
3.1 Terms and definitions . 6
3.2 Terms specific to this document . 7
3.3 Abbreviated terms . 7
4 Measurement of resistance . 7
4.1 General . 7
4.2 Method for processing and fabrication of DUT . 8
4.3 Experimental procedures . 8
5 Reporting data . 9
6 Data analysis and interpretation of results . 9
6.1 General . 9
6.2 Parameter fitting . 10
6.3 Interpretation of results . 10
Annex A (informative) Case study . 11
A.1 Measurement of the analogue change and the fluctuation of the resistance . 11
A.1.1 General . 11
A.1.2 I-V measurement of TiN/Ta-oxide/TiN . 11
A.1.3 Data analysis . 15
Bibliography . 18

Figure 1 – Example of the experimental schematic diagram for the resistance
measurement . 8
Figure 2 – Photos of the sample stage . 8
Figure A.1 – Transmission electron microscopy image of TiN/Ta-oxide/TiN . 11
Figure A.2 – DC I-V measurement . 12
Figure A.3 – Pulse measurement . 13
Figure A.4 – Initial measurement . 13
Figure A.5 – Repeated measurement . 13
Figure A.6 – Post-measurement characterization . 14
Figure A.7 – Conductance increasing process . 16
Figure A.8 – Normalized conductance in increasing process . 16
Figure A.9 – Conductance decreasing process . 16
Figure A.10 – Normalized conductance in decreasing process . 17

Table 1 – Measurement sequence of analogue resistance change and its parameters . 9
Table A.1 – Measurement sequence of analogue resistance change and its
parameters (case study) . 14
Table A.2 – Results of parameter fitting . 17
Table A.3 – Results of parameter fitting using normalized conductance (normalize
range = ΔG in Table A.2) . 17
max
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
NANOMANUFACTURING –
KEY CONTROL CHARACTERISTICS –
Part 8-3: Nano-enabled metal-oxide interfacial devices –
Analogue resistance change and resistance fluctuation:
Electrical resistance measurement

FOREWORD
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IEC TS 62607-8-3 has been prepared by IEC technical committee 113: Nanotechnology
standardization for electrical and electronic products and systems. It is a Technical
Specification.
The text of this Technical Specification is based on the following documents:
Draft Report on voting
113/743/DTS 113/767/RVDTS
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
– 4 – IEC TS 62607-8-3:2023 © IEC 2023
The language used for the development of this Technical Specification is English.
A list of all parts in the IEC 62607 series, published under the general title Nanomanufacturing –
Key control characteristics, can be found on the IEC website.
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
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The committee has decided that the contents of this document will remain unchanged until the
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specific document. At this date, the document will be
 transformed into an International standard,
 reconfirmed,
 withdrawn,
 replaced by a revised edition, or
 amended.
IMPORTANT – The "colour inside" logo on the cover page of this document indicates
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INTRODUCTION
Nano-enabled metal-oxide interfaces, such as an oxide nanolayer sandwiched by metal
electrodes, are the essential components of IoT devices for computing. Nano-enabled functions
derived from the nanoscale metal-oxide interface and the oxide nanolayer appear, such as a
significant change in electrical resistance. The analogue resistance change is the typical
characteristic which possesses the large potential for non-von Neumann information processing.
More concretely, the metal-oxide interfacial device is an indispensable element in the product-
sum circuit that records the learning process as the analogue resistance change. In the
research community, however, the analogue change and the fluctuation of the resistance have
not yet been systematically investigated. The reason why systematic research and development
is not progressing is that the measurement protocol of these characteristics is not quantitative.
The bottleneck impedes not only the electrotechnical evaluation of the device but also
developments for various applications.
This document offers a measurement protocol of the analogue resistance change and the
quantitative index to evaluate the linearity of the analogue resistance change in nano-enabled
metal-oxide interfacial devices.

– 6 – IEC TS 62607-8-3:2023 © IEC 2023
NANOMANUFACTURING –
KEY CONTROL CHARACTERISTICS –
Part 8-3: Nano-enabled metal-oxide interfacial devices –
Analogue resistance change and resistance fluctuation:
Electrical resistance measurement

1 Scope
This part of IEC 62607, which is a Technical Specification, specifies a measurement protocol
to determine the key control characteristics
– analogue resistance change, and
– resistance fluctuation
for nano-enabled metal-oxide interfacial devices by
– electrical resistance measurement.
Analogue resistance change as a function of applied voltage pulse is measured in metal-oxide
interfacial devices. The linearity in the relationship of the variation of conductance and the pulse
number is evaluated using the parameter fitting. The parameter of the resistance fluctuation is
simultaneously computed in the fitting process.
– This method is applicable for evaluating computing devices composed of the metal-oxide
interfacial device, for example, product-sum circuits, which record the learning process as
the analogue resistance change.
2 Normative references
The following documents are referred to in the text in such a wa
...