IEC 60747-15:2010

Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices

IEC 60747-15:2010 gives the requirements for isolated power semiconductor devices excluding devices with incorporated control circuits. These requirements are additional to those given in other parts of IEC 60747 for the corresponding non-isolated power devices. The main changes with respect to previous edition are listed below.
a) Clause 3, 4 and 5 were re-edited and some of them were combined to other sub clauses.
b) Clause 6, 7 were re-edited as a part of "Measuring methods" with amendment of suitable addition and deletion.
c) Clause 8 was amended by suitable addition and deletion.
d) Annex C, D and Bibliography were deleted.
This publication is to be read in conjunction with IEC 60747-1:2006.

Dispositifs à semiconducteurs - Dispositifs discrets - Partie 15: Dispositifs de puissance à semiconducteurs isolés

La CEI 60747-15:2010 donne les exigences relatives aux dispositifs de puissance à semi-conducteurs isolés avec circuits de commande intégrés. Ces exigences s'ajoutent à celles données dans d'autres parties de la CEI 60747 pour les dispositifs de puissance non-isolés correspondants. Les modifications principales par rapport à l'édition précédente sont les suivantes:
a) Les Articles 3, 4 et 5 ont été réédités et certains ont été associés à d'autres paragraphes.
b) Les Articles 6 et 7 ont été réédités et font partie des "Méthodes de mesure" avec les ajouts et suppressions correspondants.
c) L'Article 8 a été modifié par les ajouts et suppressions appropriés correspondants.
d) Les Annexes C, D et la Bibliographie ont été supprimées.
Cette publication doit être lue conjointement avec la CEI 60747-1:2006.

General Information

• Status: Published
• Publication Date: 15-Dec-2010
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: SC 47E - Discrete semiconductor devices
• Drafting Committee: WG 3 - TC 47/SC 47E/WG 3

Relations

• Revises: IEC 60747-15:2003 - Discrete semiconductor devices - Part 15: Isolated power semiconductor devices
• Effective Date: 05-Sep-2023
• Revised: IEC 60747-15:2024 - Semiconductor devices - Part 15: Discrete devices - Isolated power semiconductor devices
• Effective Date: 05-Sep-2023

Standards Content (Sample)

IEC 60747-15 ®
Edition 2.0 2010-12
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Discrete devices –
Part 15: Isolated power semiconductor devices

Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 15: Dispositifs de puissance à semiconducteurs isolés

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IEC 60747-15 ®
Edition 2.0 2010-12
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Discrete devices –
Part 15: Isolated power semiconductor devices

Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 15: Dispositifs de puissance à semiconducteurs isolés

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
T
CODE PRIX
ICS 31.080.99 ISBN 978-2-88912-310-0
– 2 – 60747-15 Ó IEC:2010
CONTENTS
FOREW ORD . 4
1 Sc o pe . 6
2 Normative references . 6
3 Terms and definitions . 7
4 Letter symbols . 8
4.1 Ge n eral . 8
4.2 Additional subscripts/symbols . 8
4.3 List letter symbols . 8
4.3.1 Voltages and currents . 8
4.3.2 Mechanical symbols . 8
4.3.3 Other symbols . 9
5 Essential ratings (limiting values) and characteristics . 9
5.1 Ge n eral . 9
5.2 Ratings (limiting values). 9
5.2.1 Isolation voltage (V ) . 9
isol
5.2.2 Peak case non-rupture current (I or I ) (where appropriate). 9
RSMC CNR
5.2.3 Terminal current (I ) (where appropriate), . 9
tRMS
5.2.4 Total power dissipation (P ) . 9
tot
5.2.5 Temperatures . 9
5.2.6 Mechanical ratings . 10
5.2.7 Climatic ratings (where appropriate) . 10
5.3 Characteristics . 10
5.3.1 Mechanical characteristics . 10
5.3.2 Parasitic inductance (L ) . 11
p
5.3.3 Parasitic capacitances (C ) . 11
p
5.3.4 Partial discharge inception voltage (V or V ) (where
iM i(RMS)
appropriate) . 11
5.3.5 Partial discharge extinction voltage (V or V ) (where
eM e(RMS)
appropriate) . 11
5.3.6 Thermal resistances . 11
5.3.7 Transient thermal impedance (Z ) . 12
th
6 Measurement methods . 12
6.1 Verification of isolation voltage rating between terminals and base plate
(V ) . 12
isol
6.2 Methods of measurement . 13
6.2.1 Partial discharge inception and extinction voltages (V ) (V ) . 13
i e
6.2.2 Parasitic inductance (L ) . 13
p
6.2.3 Parasitic capacitance terminal to case (C ) . 15
p
6.2.4 Thermal characteristics . 16
7 Acceptance and reliability . 18
7.1 General requirements . 18
7.2 List of endurance tests . 19
7.3 Acceptance defining criteria . 19
7.4 Type tests and routine tests . 19
7.4.1 Type tests . 19
7.4.2 Routine tests . 20
Annex A (informative) Test method of peak case non-rupture current . 21

60747-15 Ó IEC:2010 – 3 –
Annex B (informative) Measuring method of the thickness of thermal compound paste . 24
Bibliography . 25

Figure 1 – Basic circuit diagram for isolation breakdown withstand voltage test (“high
pot test”) with V . 12
isol
Figure 2 – Circuit diagram for measurement of parasitic inductances (L ) . 14
p
Figure 3 – Wave forms . 15
Figure 4 – Circuit diagram for measurement of parasitic capacitance C . 16
p
Figure 5 – Cross-section of an isolated power device with reference points for
temperature measurement of T and T . 17
c s
Figure A.1 – Circuit diagram for test of peak case non-rupture current I . 21
CNR
Figure B.1 – Example of a measuring gauge for a layer of thermal compound paste of
a thickness between 5 mm and 150 mm . 24

Table 1 – Endurance tests . 19
Table 2 – Acceptance defining characteristics for endurance and reliability tests . 19
Table 3 – Minimum type and routine tests for isolated power semiconductor devices . 20

– 4 – 60747-15 Ó IEC:2010
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
DISCRETE DEVICES –
Part 15: Isolated power semiconductor devices

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