IEC 60747-6:2016

Semiconductor devices - Part 6: Discrete devices - Thyristors

IEC 60747-6:2016 provides standards for the following types of discrete semiconductor devices:
- reverse-blocking triode thyristors;
- reverse-conducting (triode) thyristors;
- bidirectional triodethyristors (triacs);
- turn-off thyristors.
This edition includes the following significant technical changes with respect to the previous edition:
a) Clauses 3, 4, 5, 6, and 7 were amended with some deletions of information no longer in use or already included in other parts of the IEC 60747 series, and with some necessary additions;
b) some parts of Clause 8 and Clause 9 were moved and added to Clause 7 of this third edition;
c) Clause 8 and 9 were deleted in this third edition;
d) Annex A was deleted.
This publication is to be read in conjunction with IEC 60747-1:2006.

Dispositifs à semiconducteurs - Partie 6: Dispositifs discrets - Thyristors

L'IEC 60747-6:2016 donne les normes pour les types suivants de dispositifs discrets à semiconducteurs:
- les thyristors triodes bloqués en inverse;
- les thyristors (triodes) passants en inverse;
- les thyristors triodes bidirectionnels (triacs);
- les thyristors blocables.
Cette édition inclut les modifications techniques majeures suivantes par rapport à l'édition précédente:
a) Les Articles 3, 4, 5, 6 et 7 ont été modifiés en procédant d'une part à des suppressions d'informations ne faisant plus l'objet d'une application ou figurant déjà dans d'autres parties de la série IEC 60747, et d'autre part à des ajouts nécessaires.
b) Certaines parties de l'Article 8 et de l'Article 9 ont été déplacées et ajoutées à l'Article 7 dans cette troisième édition.
c) L'Article 8 et l'Article 9 ont été supprimés dans cette troisième édition.
d) L'Annexe A a été supprimée.
Cette publication doit être lue conjointement avec la IEC 60747-1:2006.

General Information

• Status: Published
• Publication Date: 12-Apr-2016
• ICS: 31.080.20 - Thyristors
• Technical Committee: SC 47E - Discrete semiconductor devices
• Drafting Committee: WG 3 - TC 47/SC 47E/WG 3
• Current Stage: PPUB - Publication issued
• Start Date: 13-Apr-2016
• Completion Date: 15-Apr-2016

Relations

• Revised: IEC 60747-6:2025 - Semiconductor devices - Part 6: Discrete devices - Thyristors
• Effective Date: 05-Sep-2023
• Revises: IEC 60747-6:2000 - Semiconductor devices - Part 6: Thyristors
• Effective Date: 05-Sep-2023

Standards Content (Sample)

IEC 60747-6 ®
Edition 3.0 2016-04
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 6: Discrete devices – Thyristors

Dispositifs à semiconducteurs –
Partie 6: Dispositifs discrets – Thyristors

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IEC 60747-6 ®
Edition 3.0 2016-04
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 6: Discrete devices – Thyristors

Dispositifs à semiconducteurs –

Partie 6: Dispositifs discrets – Thyristors

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.20 ISBN 978-2-8322-3296-5

– 2 – IEC 60747-6:2016 © IEC 2016
CONTENTS
FOREWORD . 7
1 Scope . 9
2 Normative references. 9
3 Terms and definitions . 9
3.1 General . 9
3.2 Terms and definitions related to ratings and characteristics: currents . 10
3.3 Terms and definitions related to ratings and characteristics: gate voltages
and currents . 11
3.4 Terms and definitions related to ratings and characteristics: power and
energy dissipation . 12
3.4.1 General . 12
3.4.2 Instantaneous power during a cycle . 12
3.4.3 Mean power dissipation . 14
3.4.4 Energy dissipation . 15
3.5 Terms and definitions related to ratings and characteristics: recovery times
and other characteristics . 16
3.5.1 On-state . 16
3.5.2 Recovery times . 16
3.5.3 Times and rates of rise characterizing gate-controlled turn-on . 18
3.5.4 Times and rates of rise characterizing gate-controlled turn-off . 19
3.5.5 Recovered charges . 22
3.6 Mechanical ratings . 22
4 Letter symbols . 23
4.1 General . 23
4.2 Additional general subscripts . 23
4.3 List of letter symbols . 23
5 Ratings and characteristics for thyristors . 26
5.1 Ratings (limiting values) . 26
5.1.1 Storage temperatures (T ) . 26
stg
5.1.2 Junction temperature (T , T ) . 26
vj(min) vjm
5.1.3 Operating ambient or case temperature (T or T ) . 26
a c
5.1.4 Total power dissipation (P or P ) . 26
tot C
5.1.5 Gate power dissipation . 26
5.1.6 Frequency ratings . 26
5.1.7 Special requirements for mounting . 26
5.1.8 Principle anode-cathode voltages . 27
5.1.9 Gate voltages . 27
5.1.10 Principal anode cathode currents . 28
5.1.11 Peak forward gate current (I ) . 35
FGM
5.2 Characteristics . 35
5.2.1 General . 35
5.2.2 Reverse current (I ) . 35
R
5.2.3 Reverse conducting voltage (V ) (for reverse conducting thyristors) . 35
RC
5.2.4 Continuous (direct) off-state current (I ) . 35
D
5.2.5 On-state voltage (V ) . 35
T
5.2.6 On-state characteristics (where appropriate) . 35

5.2.7 Peak sinusoidal on-state voltage (V ) . 36
TM
5.2.8 Threshold voltage (V / V ) . 36
T(TO) TO
5.2.9 On-state slope resistance (r ) . 36
T
5.2.10 Holding current (I ) . 36
H
5.2.11 Latching current (I ) . 36
L
5.2.12 Repetitive peak off-state current (I ) . 36
DRM
5.2.13 Repetitive peak reverse current (I ) . 36
RRM
5.2.14 Gate-trigger current (I ) and gate-trigger voltage (V ) . 37
GT GT
5.2.15 Gate non-trigger current (I ) and gate non-trigger voltage (V ) . 37
GD GD
5.2.16 Sustaining gate current (I ) for GTO only . 38
FGsus
5.2.17 Peak gate turn-off current (I ) for GTO only . 38
RGQM
5.2.18 Peak tail current (I ) for GTO only . 38
ZM
5.2.19 Characteristic time intervals . 39
5.2.20 Total power dissipation . 41
5.2.21 Turn-on energy dissipation (E ) for GTO preferably . 42
ON
5.2.22 On-state energy dissipation (E ) for GTO preferably . 42
T
5.2.23 Turn-off energy dissipation (E ) for GTO preferably . 43
Q
5.2.24 Recovered charge (Q ) (where appropriate) . 43
r
5.2.25 Peak reverse recovery current (I )(where appropriate) . 43
rrm
5.2.26 Reverse recovery time (t ) (where appropriate) . 43
rr
5.2.27 Thermal resistance junction to ambient (R ) . 43
th(j-a)
5.2.28 Thermal resistance junction to case (R ) . 43
th(j-c)
5.2.29 Thermal resistance case to heat sink (R ) . 43
th(c-s)
5.2.30 Thermal resistance junction to heat sink (R ) . 44
th(j-s)
5.2.31 Transient thermal impedance junction to ambient (Z ) . 44
th(j-a)
5.2.32 Transient thermal impedance junction to case (Z ) . 44
th(j-c)
5.2.33 Transient thermal impedance junction to heat sink (Z ) . 44
th(j-s)
6 Measuring and test methods . 44
6.1 General . 44
6.2 Measuring methods for electrical characteristics . 44
6.2.1 On-state voltage (V ) . 44
T
6.2.2 Repetitive peak reverse current (I ) . 47
RRM
6.2.3 Latching current (I ) . 48
L
6.2.4 Holding current (I ) . 50
H
6.2.5 Off-state current (I ) . 51
D
6.2.6 Repetitive peak off state current (I ) . 52
DRM
6.2.7 Gate trigger current or voltage (I ), (V ) . 53
GT GT
6.2.8 Gate non-trigger voltage (V ) and gate non-trigger current (I ) . 54
GD GD
6.2.9 Gate controlled delay time (t ) and turn-on time (t ) . 56
d gt
6.2.10 Circuit commutated turn-off time (t ) . 58
q
6.2.11 Critical rate of rise of off-state voltage (dv/dt ) . 61
(cr)
6.2.12 Critical rate of rise of commutating voltage of triacs (dv/dt ) . 63
(com)
6.2.13 Recovered charge (Q ) and reverse recovery time (t ) . 69
r rr
6.2.14 Circuit commutated turn-off time (t ) of a reverse conducting thyristor . 73
q
6.2.15 Turn-off behaviour of turn-off thyristors (for GTO) . 75
6.2.16 Total energy dissipation during one cycle (for fast switching thyristors) . 78
6.3 Verification test methods for ratings (limiting values) . 79
6.3.1 Non-repetitive peak reverse voltage (V ) . 79
RSM
6.3.2 Non-repetitive peak off-state voltage (V ) . 80
DSM
– 4 – IEC 60747-6:2016 © IEC 2016
6.3.3 Surge (non-repetitive) on-state current (I ) . 81
TSM
6.3.4 On-state current ratings of fast-switching thyristors . 83
6.3.5 Critical rate of rise of on-state current (di/dt ) . 94
(cr)
6.3.6 Peak case non-rupture current (I ) . 97
RSMC
6.4 Measuring methods for thermal characteristics . 98
6.4.1 General . 98
6.4.2 Measurement of the case temperature . 98
6.4.3 Measuring methods for thermal resistance (R ) and transient thermal
th
impedance (Z ) . 99
th
6.4.4 Measurement method of thermal resistance and impedance (Method A) . 99
6.4.5 Measurement method of thermal resistance and impedance (Method B) . 102
6.4.6 Measurement method of thermal resistance and impedance (Method C,
for GTO thyristors only) . 113
6.4.7 Measurement method of thermal resistance and impedance (Method D,
for GTO thyristors only) . 117
7 Requirements for type tests and routine tests, marking of thyristors and endurance
tests . 120
7.1 Type tests . 120
7.2 Routine tests . 120
7.3 Measuring and test methods . 121
7.4 Marking of thyristors . 121
7.5 Endurance tests . 121
7.5.1 General requirements . 121
7.5.2 Specific requirements . 122
7.5.3 Acceptance-defining characteristics and criteria for endurance tests . 122
7.5.4 Acceptance-defining characteristics and criteria for reliability tests . 122
7.5.5 Procedure in case of a testing error . 122
Bibliography . 124

Figure 1 – Peak values of on-state currents . 10
Figure 2 – Partial power (dissipation) of turn-off thyristors at absolute long on-state
period . 13
Figure 3 – Components of dynamic on-state energy dissipation of turn-off thyristors at
absolute short on-state period . 15
Figure 4 – Reverse recovery time . 16
Figure 5 – Off-state recovery time . 17
Figure 6 – Circuit-commutated turn-off time . 18
Figure 7 – Gate-controlled turn-on times . 19
Figure 8 – Gate-controlled turn-off times . 21
Figure 9 – Recovered charge Q . 22
r
Figure 10 – Application of gate voltages for thyristors . 28
Figure 11 – Peak sinusoidal curents and typical waveforms at higher frequencies . 32
Figure 12 – Peak trapezoidal currents and typical waveforms at higher frequencies . 34
Figure 13 – Forward gate voltage versus forward gate current . 38
Figure 14 – Examples of current and voltage wave shapes during turn-off of a thyristor
under various circuit conditions . 39
Figure 15 – Curves with total energy dissipation E as parameter and sinusoidal
p
current pulse . 41

Figure 16 – Curves with total energy dissipation E as parameter and trapezoidal
p
current pulse . 42
Figure 17 – Recovered charge Q , peak reverse recovery current I , reverse
r rrm
recovery time t (idealized characteristics) . 43
rr
Figure 18 – Circuit for measurement of on-state voltage (d.c. method) . 45
Figure 19 – Circuit for measurement of on-state voltage (oscilloscope method) . 45
Figure 20 – Graphic representation of on-state voltage versus current characteristic
(oscilloscope method) . 46
Figure 21 – Circuit diagram for measurement of on-state voltage (pulse method) . 46
Figure 22 – Circuit diagram for measuring peak reverse current . 48
Figure 23 – Circuit diagram for measuring latching current . 49
Figure 24 – Waveform of the latching current . 50
Figure 25 – Circuit diagram for measuring holding current . 51
Figure 26 – Circuit diagram for measuring off-state current (d.c. method) . 52
Figure 27 – Circuit diagram for measuring peak off-state current . 52
Figure 28 – Circuit diagram for measuring gate trigger current and/or voltage . 53
Figure 29 – Circuit diagram for measuring gate non-trigger current and/or voltage. 55
Figure 30 – Circuit diagram for measuring the gate controlled delay time and turn-on time . 56
Figure 31 – On-state current waveform of a thyristor . 57
Figure 32 – Off-state voltage and current waveform of a thyristor . 58
Figure 33 – Thyristor switching waveforms . 59
Figure 34 – Diagram of basic circuit . 60
Figure 35 – Circuit diagram for measuring critical rate of rise of off-state voltage . 61
Figure 36 – Waveform . 61
Figure 37 – Measurement circuit for exponential rate of rise . 62
Figure 38 – Measurement circuit for critical rate of rise of commutating voltage . 64
Figure 39 – Waveforms . 65
Figure 40 – Circuit diagram for high current triacs . 66
Figure 41 – Waveforms with high and low di/dt . 67
Figure 42 – Circuit diagram for recovered charge and reverse recovery time (half sine
wave method) . 69
Figure 43 – Current waveform through the thyristor T . 70
Figure 44 – Circuit diagram for recovered charge and reverse recover time

(rectangular wave method) . 71
Figure 45 – Current waveform through the thyristor T . 72
Figure 46 – Circuit diagram for measuring circuit commutated turn-off time of reverse
conducting thyristor . 73
Figure 47 – Current and voltage waveforms of commutated turn-off time of reverse
conducting thyristor . 74
Figure 48 – Circuit diagram to measure turn-off behaviour of turn-off thyristors . 76
Figure 49 – Voltage and current waveforms during turn-off . 76
Figure 50 – Circuit diagram for measuring non-repetitive peak reverse voltage rating . 79
Figure 51 – Circuit diagram for measuring non-repetitive peak off-state voltage rating . 80
Figure 52 – Circuit diagram for measuring surge (non-repetitive) on-state current
rating . 82

– 6 – IEC 60747-6:2016 © IEC 2016
Figure 53 – Basic circuit and test waveforms for sinusoidal on-state current with
reverse voltage . 84
Figure 54 – Extended circuit diagram for measuring sinusoidal on-state current with
reverse voltage . 85
Figure 55 – Basic circuit and test waveforms for sinusoidal on-state current with
reverse voltage suppressed. . 87
Figure 56 – Extended circuit diagram for measuring sinusoidal on-state current with
reverse voltage suppressed . 88
Figure 57 – Basic circuit diagram and test waveforms for trapezoidal on-state current
with reverse voltage applied . 90
Figure 58 – Basic circuit and test waveforms for trapezoidal on-state current with
reverse voltage suppressed . 92
Figure 59 – Circuit diagram for measuring critical rate of rise of on-state current . 94
Figure 60 – On-state current waveform for di/dt rating . 96
Figure 61 – Circuit diagram for measuring peak case non-rupture current . 97
Figure 62 – Waveform of the reverse current i through the thyristor under test . 97
R
Figure 63 – Basic circuit diagram for the measurement of R (Method A) . 100
th
Figure 64 – Basic circuit diagram for the measurement of Z (t) (Method A) . 101
th
Figure 65 – Superposition of the reference current pulse on different on-state currents . 103
Figure 66 – Waveforms for power dissipation and virtual junction temperature (general
case) . 104
Figure 67 – Calibration curve . 106
Figure 68 – Basic circuit diagram for the measurement of R (Method B) . 108
th
Figure 69 – Waveforms for measuring thermal resistance . 109
Figure 70 – Basic circuit diagram for the measurement of Z (t) (Method B) . 111
th
Figure 71 – Waveforms for measuring transient thermal impedance . 111
Figure 72 – Basic circuit diagram for the measurement of R (Method C) . 114
th
Figure 73 – Waveforms for measuring thermal resistance . 114
Figure 74 – Basic circuit diagram for the measurement of Z (t) (Method C) . 116
th
Figure 75 – Waveforms for measuring the transient thermal impedance of a gate turn-
off thyristor . 116
Figure 76 – Calibration and measurement arrangement for the heat flow method . 118

Table 1 – Additional general subscripts . 23
Table 2 – Principal voltages, anode-cathode voltages . 24
Table 3 – Principal currents, anode currents, cathode currents . 24
Table 4 – Gate voltages . 24
Table 5 – Gate currents . 24
Table 6 – Time quantities . 25
Table 7 – Power dissipation . 25
Table 8 – Sundry quantities . 25
Table 9 – Minimum type and routine tests for reverse-blocking triode thyristors . 121
Table 10 – Acceptance-defining characteristics after endurance tests . 122
Table 11 – Conditions for endurance tests . 123

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
Part 6: Discrete devices – Thyristors

FOREWORD
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International Standard IEC 60747-6 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
This third edition cancels and replaces the second edition, published in 2000. This edition
constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous
edition:
a) Clauses 3, 4, 5, 6, and 7 were amended with some deletions of information no longer in
use or already included in other parts of the IEC 60747 series, and with some necessary
additions;
b) some parts of Clause 8 and Clause 9 were moved and added to Clause 7 of this third
edition;
c) Clause 8 and 9 were deleted in this third edition;
d) Annex A was deleted.
– 8 – IEC 60747-6:2016 © IEC 2016
This International Standard is to be used in conjunction with IEC 60747-1:2006 and
Amendment 1:2010.
The text of this standard is based on the following documents:
FDIS Report on voting
47E/532/FDIS 47E/538/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC 60747 series, published under the general title Semiconductor
devices, can be found on the IEC website.
Future standards in this series will carry the new general title as cited above. Titles of existing
standards in this series will be updated at the time of the next edition.
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC website under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
SEMICONDUCTOR DEVICES –
Part 6: Discrete devices – Thyristors

1 Scope
This part of IEC 60747 provides standards for the following types of discrete semiconductor
devices:
– reverse-blocking triode thyristors;
– reverse-conducting (triode) thyristors;
– bidirectional triode thyristors (triacs);
– turn-off thyristors.
If no ambiguity is likely to occur, any of the above may be referred to as thyristors.
2 Normative references
The following documents, in whole or in part, are normatively referenced in this document and
are indispensable for its application. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC 60747-1:2006, Semiconductor devices – Part 1: General
IEC 60747-1:2006/AMD1:2010
IEC 60749-23, Semiconductor devices – Mechanical and climatic test methods– Part 23: High
temperature operating life
IEC 60749-25, Semiconductor devices – Mechanical and climatic test methods – Part 25:
Temperature cycling
IEC 60749-34:2010, Semiconductor devices – Mechanical and climatic test methods – Part 34:
Power cycling
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
3.1 General
3.1.1
triac
bidirectional triode thyristor
three-terminal thyristor having substantially the same switching behaviour in the first and third
quadrants of the current-voltage characteristic
[SOURCE: IEC 60050-521:2002, 521-04-67]

– 10 – IEC 60747-6:2016 © IEC 2016
3.1.2
GTO
gate-turn-off thyristor
turn-off thyristor
thyristor which can be switched from the on-state to the off-state and vice versa by applying
control signals of appropriate polarity to the gate terminal
Note 1 to entry: This note applies to the French languange only.
[SOURCE: IEC 60050-521:2002, 521-04-68]
3.2 Terms and definitions related to ratings and characteristics: currents
3.2.1
overload reverse-conducting current
I
RC(OV)
reverse-conducting current whose continuous application would cause the maximum rated
virtual junction temperature to be exceeded
3.2.2
surge reverse-conducting current

I
RCSM
peak non-repetitive reverse current pulse of short duration and specified wave shape
3.2.3
reverse leakage current
I
R
reverse current that occurs when applying reverse voltage to the device
3.2.4
overload on-state current
I
T(OV)
on-state current whose continuous application would cause the maximum-rated virtual
junction temperature to be exceeded
Note 1 to entry: See Figure 1.
i
T
I
TSM
I
T(OV)
I
TRM
t
i
R
IEC
Figure 1 – Peak values of on-state currents

3.2.5
surge on-state current
I
TSM
on-state current pulse of short duration and specified wave shape
Note 1 to entry: Occurrence of I causes or would cause the maximum rated virtual junction temperature to be
TSM
exceeded, but which is assumed to occur rarely and with a limited number of such occurrences during the service
life of the device and to be a consequence of unusual circuit conditions (e.g., a fault) (see Figure 1).
3.2.6
tail current
I
Z
anode current that flows during the tail time
Note 1 to entry: See Figure 8.
3.2.7
peak tail current
I
ZM
peak value of tail current that occurs shortly after the beginning of the tail
time
Note 1 to entry: See Figure 8.
3.2.8
peak case non-rupture current
I
RSMC
peak value of current that will not cause bursting of the case or the emission of a plasma
beam
3.3 Terms and definitions related to ratings and characteristics: gate voltages and
currents
3.3.1
sustaining gate current
I
FGsus
minimum forward gate current required ensuring that, if the anode current
drops below the value required to keep all the subdivided cathode areas in conduction, they
will all return to conduction when the anode current is increased again
3.3.2
turn-off gate voltage
V
RGQ
reverse gate voltage during the time interval within which the thyristor is
turning off
3.3.3
peak turn-off gate voltage
V
RGQM
peak value of the turn-off gate voltage at the end of its rapid rise after the
peak value of turn-off gate current (I ) has been reached
RGQM
3.3.4
turn-off gate bias voltage
V
RGQB
essentially constant value of the turn-off gate voltage that occurs towards
the end of the turn-off process, in the case where the gate-control circuit supports this
process by maintaining the turn-off gate voltage at a value that is higher than the off-state
gate bias voltage
– 12 – IEC 60747-6:2016 © IEC 2016
3.3.5
off-state gate bias voltage
V
RGB
reverse gate voltage which is applied after the thyristor was turned off
3.3.6
on-state gate bias current
I
FGB
forward gate current flowing after the thyristor has been turned on
3.3.7
turn-off gate current
I
RGQ
reverse gate current during the time interval within which thyristor is
turning off
3.3.8
turn-off gate bias current
I
RGQB
gate current associated with the turn-off gate bias voltage V
RGQB
3.3.9
peak turn-off gate current
I
RGQM
peak value of the reverse gate current reached at the end of its rapid rise
in the beginning of the turn-off process
Note 1 to entry: Specifications refer to the minimum value of I that the gate turn-off pulse generator is
RGQM
capable of supplying as a function of the peak on-state current to be switched off under specified conditions.
3.4 Terms and definitions related to ratings and characteristics: power and energy
dissipation
3.4.1 General
All definitions are written in terms of triode thyristors. Where appropriate, they apply also to
diode thyristors. All definitions for power and power dissipation refer, if not otherwise
specified, to the product of anode or principal current and anode or principal voltage. The
definitions are general. They do not consider that the beginning and ending of the particular
time interval should be identified in order to make specifications for the derived characteristics
“mean partial power dissipation” and “partial energy dissipation” meaningful. However,
guidance for the specification of these times is given in the relevant notes.
3.4.2 Instantaneous power during a cycle
3.4.2.1
reverse power
P
R
power when the thyristor is in the reverse-blocking state
Note 1 to entry: If not otherwise specified, the term refers to the power in the time interval between the ending of
the turn-off time and the change from the reverse blocking state to the off state (either I =
...