IEC 62047-44:2024

Semiconductor devices - Micro-electromechanical devices - Part 44: Test methods for dynamic performances of MEMS resonant electric-field-sensitive devices

IEC 62047-44:2024 describes terminology, definitions and test methods that are used to evaluate and determine the dynamic performance of MEMS (Micro-Electromechanical Systems) resonant electric‑field‑sensitive devices. It also specifies sample requirements and test equipment for dynamic performances of MEMS resonant electric‑field‑sensitive devices. The statements made in this document are also applicable to MEMS resonant electric‑field‑sensitive devices with various driving mechanisms such as electrostatic, electrothermal, electromagnetic, piezoelectric, etc.

General Information

• Status: Published
• Publication Date: 21-Feb-2024
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: SC 47F - Micro-electromechanical systems
• Drafting Committee: WG 3 - TC 47/SC 47F/WG 3
• Current Stage: PPUB - Publication issued
• Start Date: 22-Feb-2024
• Completion Date: 15-Mar-2024

Overview

IEC 62047-44:2024 - "Semiconductor devices – Micro‑electromechanical devices – Part 44" specifies terminology, sample requirements and test methods for dynamic performances of MEMS resonant electric‑field‑sensitive devices. The standard covers how to evaluate dynamic behavior (resonant operation) and defines test equipment and procedures applicable across driving mechanisms such as electrostatic, electrothermal, electromagnetic and piezoelectric actuation. It is part of the IEC 62047 series for MEMS semiconductor devices.

Key topics and technical requirements

• Scope and definitions: Terminology for MEMS electric‑field‑sensitive and MEMS resonant electric‑field‑sensitive devices (see Annex A for work principles).
• Essential ratings: Identification, device composition (driving/detecting/shielding electrodes, supporting substrate), recommended operating conditions and additional information needed for testing.
• Dynamic characteristics to measure:
  • Resonant frequency - methods to determine device resonance.
  • Quality factor (Q) - procedures and circuit diagrams to quantify damping and energy loss.
  • Response time - measurement setups and data‑processing for transient behavior.
• Measuring methods:
  • Optical test method - optical displacement/velocity sensing and test system diagram.
  • Electrical test method - electrical excitation and readout circuits, data processing and precautions.
  • Detailed data processing methods, specified test conditions and sample requirements.
• Test equipment: Specification of standard electric field equipment (parallel metal plate calibration system, shielding cover, continuously adjustable high‑voltage source) to produce a uniform electric field during tests.
• Informative annexes: Examples of typical sensitive structures and drive types (electrostatic combs, thermal, piezoelectric) and recommended test configurations.

Practical applications

IEC 62047-44:2024 is designed to ensure consistent, reproducible evaluation of MEMS resonant electric‑field‑sensitive devices used where precise electric‑field sensing is required. Typical practical uses include:

• Performance qualification of MEMS E‑field sensors during design verification and production testing.
• Comparative testing by component manufacturers and independent test laboratories.
• Development and validation of sensor modules for industrial monitoring, EMC testing, and any application requiring calibrated electric‑field measurements.

Who should use this standard

• MEMS designers and device manufacturers
• Semiconductor test engineers and quality assurance teams
• Calibration and compliance laboratories
• Procurement/specification authors and system integrators working with resonant electric‑field sensors

Related references

• Other parts of the IEC 62047 series for MEMS devices and IEC Electropedia for terminology. (IEC 62047-44 contains no normative references but points to annexes for examples and test setups.)

Keywords: IEC 62047-44:2024, MEMS resonant electric-field-sensitive devices, test methods, resonant frequency, quality factor Q, response time, electrostatic, electrothermal, piezoelectric, parallel plate standard electric field.

Standards Content (Sample)

IEC 62047-44 ®
Edition 1.0 2024-02
INTERNATIONAL
STANDARD
Semiconductor devices – Micro-electromechanical devices –
Part 44: Test methods for dynamic performances of MEMS resonant electric-
field-sensitive devices
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IEC 62047-44 ®
Edition 1.0 2024-02
INTERNATIONAL
STANDARD
Semiconductor devices – Micro-electromechanical devices –

Part 44: Test methods for dynamic performances of MEMS resonant electric-

field-sensitive devices
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99  ISBN 978-2-8322-8274-8

– 2 – IEC 62047-44:2024 © IEC 2024
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Essential ratings and characteristics . 7
4.1 Composition of MEMS resonant electric‑field‑sensitive devices . 7
4.2 Identification and types . 7
4.3 Description of application and specification . 7
4.4 Recommended operating conditions . 7
4.5 Additional information . 8
5 Dynamic characteristics . 8
5.1 Resonant frequency . 8
5.2 Quality factor Q . 8
5.3 Response time . 8
6 Measuring methods . 8
6.1 General . 8
6.2 Resonant frequency . 9
6.2.1 Purpose . 9
6.2.2 Optical test method . 9
6.2.3 Electrical test method . 11
6.2.4 Data processing method . 12
6.2.5 Specified conditions . 12
6.3 Quality factor (Q) . 12
6.3.1 Purpose . 12
6.3.2 Circuit diagram . 12
6.3.3 Principle of measurement . 12
6.3.4 Precaution to be observed . 13
6.3.5 Measurement procedure . 13
6.3.6 Data processing method . 13
6.3.7 Specified conditions . 13
6.4 Response time . 13
6.4.1 Purpose . 13
6.4.2 Circuit diagram . 13
6.4.3 Principle of measurement . 13
6.4.4 Precaution to be observed . 13
6.4.5 Measurement procedure . 13
6.4.6 Data processing method . 14
6.4.7 Specified conditions . 14
Annex A (informative) Work principle and general description of MEMS resonant
electric‑field‑sensitive devices . 15
Annex B (informative) Sensitive structure and test of typical MEMS resonant
electric‑field‑sensitive devices . 17
B.1 Electrostatically driven MEMS resonant electric‑field‑sensitive devices . 17
B.2 Thermally driven MEMS resonant electric‑field‑sensitive devices . 18
B.3 Piezoelectrically driven MEMS resonant electric‑field‑sensitive devices . 19

Figure 1 – Terminals of MEMS resonant electric‑field‑sensitive devices . 7
Figure 2 – Diagram of the MEMS resonant electric‑field‑sensitive device on the parallel
plate system . 9
Figure 3 – Test system diagram of optical test method . 10
Figure 4 – Test system diagram of electrical test method . 11
Figure A.1 – Example for working principle of MEMS resonant electric‑field‑sensitive
device . 16
Figure B.1 – Example for electrostatically driven MEMS resonant
electric‑field‑sensitive device . 17
Figure B.2 – Circuit diagram of electrical test system of electrostatic comb type
electric‑field‑sensitive device . 18
Figure B.3 – Example for thermally driven MEMS resonant electric‑field‑sensitive
devices . 18
Figure B.4 – Example for piezoelectrically driven MEMS resonant
electric‑field‑sensitive devices . 19

– 4 – IEC 62047-44:2024 © IEC 2024
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 44: Test methods for dynamic performances of MEMS resonant
electric‑field‑sensitive devices

FOREWORD
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IEC 62047-44 has been prepared by subcommittee 47F: Micro-electromechanical systems, of
IEC technical committee 47: Semiconductor devices. It is an International Standard.
The text of this International Standard is based on the following documents:
Draft Report on voting
47F/456/FDIS 47F/463/RVD
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.

This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
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A list of all parts in the IEC 62047 series, published under the general title Semiconductor
devices – Micro-electromechanical devices, can be found on the IEC website.
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– 6 – IEC 62047-44:2024 © IEC 2024
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 44: Test methods for dynamic performances of MEMS resonant
electric‑field‑sensitive devices

1 Scope
This part of IEC 62047 describes terminology, definitions and test methods that are used to
evaluate and determine the dynamic performance of MEMS (Micro-Electromechanical Systems)
resonant electric‑field‑sensitive devices. It also specifies sample requirements and test
equipment for dynamic performances of MEMS resonant electric‑field‑sensitive devices. The
statements made in this document are also applicable to MEMS resonant electric‑field‑sensitive
devices with various driving mechanisms such as electrostatic, electrothermal, electromagnetic,
piezoelectric, etc.
2 Normative references
There are no normative references in this document.
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminology databases for use in standardization at the following
addresses:
• IEC Electropedia: available at https://www.electropedia.org/
• ISO Online browsing platform: available at https://www.iso.org/obp
3.1
MEMS electric‑field‑sensitive device
electric‑field‑sensitive device fabricated by MEMS technology, which can sense the electric field
strength and convert it into electrical signal for output
Note 1 to entry: For a detailed description of the MEMS electric‑field‑sensitive device, see Annex A.
3.2
MEMS resonant electric‑field‑sensitive device
electric‑field‑sensitive device fabricated by MEMS technology, which senses the electric field
strength by driving its sensitive structure to vibrate in the resonant state
Note 1 to entry: For a detailed description of the MEMS resonant electric‑field‑sensitive device, see Annex A.
3.3
standard electric field equipment
standard electric field equipment that is composed of parallel metal plate calibration system,
shielding cover, high voltage source, etc., and can produce uniform electric field environment
Note 1 to entry: The high voltage source with continuous adjustable voltage is connected with the parallel metal
plate calibration system. When the high voltage is loaded on the parallel metal plate calibration system, the uniform
electric field can be maintained between the parallel metal plate calibration system.
Note 2 to entry: The electric‑field‑sensitive devices are placed in the standard electric field for dynamic performance
test.
4 Essential ratings and characteristics
4.1 Composition of MEMS resonant electric‑field‑sensitive devices
MEMS resonant electric‑field‑sensitive device is generally composed of driving electrode,
detecting electrode, shielding electrode, supporting substrate and so on. Some types of field
sensitive devices do not have shielding electrodes, such as piezoelectric MEMS resonant
electric‑field‑sensitive devices. More information on the work principle and the sensitive
structure of typical MEMS resonant electric‑field‑sensitive devices are given in Annex A and
Annex B respectively.
4.2 Identification and types
General description of the function of MEMS resonant electric‑field‑sensitive devices and their
applications shall be stated. The statement shall include the details of manufacturing
technologies about the MEMS resonant electric‑field‑sensitive devices with different operation,
configuration, and actuation mechanism. More information on typical MEMS resonant
electric‑field‑sensitive devices with different drive structures is given in Annex B.
4.3 Description of application and specification
Information on application of the MEMS resonant electric‑field‑sensitive devices shall be given.
Block diagrams of MEMS resonant electric‑field‑sensitive devices and the applied systems
should be also given. All terminals should be identified
...