Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers

Provides the terminology, the essential ratings and characteristics, as well as the measuring methods, for integrated circuit microwave power amplifiers. This consolidated version consists of the first edition (2001) and its amendment 1 (2007). Therefore, no need to order amendment in addition to this publication.

General Information

Status
Published
Publication Date
12-Mar-2007
Current Stage
PPUB - Publication issued
Start Date
13-Mar-2007
Completion Date
13-Mar-2007
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INTERNATIONAL IEC


STANDARD 60747-16-1



Edition 1.1
2007-03

Edition 1:2001 consolidated with amendment 1:2007
Semiconductor devices –
Part 16-1:
Microwave integrated circuits –
Amplifiers

Reference number
IEC 60747-16-1:2001+A1:2007(E)

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Publication numbering
As from 1 January 1997 all IEC publications are issued with a designation in the
60000 series. For example, IEC 34-1 is now referred to as IEC 60034-1.
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INTERNATIONAL IEC


STANDARD 60747-16-1





Edition 1.1

2007-03

Edition 1:2001 consolidated with amendment 1:2007
Semiconductor devices –
Part 16-1:
Microwave integrated circuits –
Amplifiers

© IEC 2007 ⎯ Copyright - all rights reserved
No part of this publication may be reproduced or utilized in any form or by any means, electronic or
mechanical, including photocopying and microfilm, without permission in writing from the publisher.
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For price, see current catalogue

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– 2 – 60747-16-1 © IEC:2001+A1:2007(E)
CONTENTS
FOREWORD.4

1 Scope.6
2 Normative references .6
3 Terminology .6
4 Essential ratings and characteristics.9
4.1 General .9
4.2 Application related description.10
4.3 Specification of the function .10
4.4 Limiting values (absolute maximum rating system) .12
4.5 Operating conditions (within the specified operating temperature range) .14
4.6 Electrical characteristics.14
4.7 Mechanical and environmental ratings, characteristics and data.16
4.8 Additional information.16
5 Measuring methods .17
5.1 General .17
5.2 Linear (power) gain (G ) .17
lin
5.3 Linear (power) gain flatness (ΔG ) .19
lin
5.4 Power gain (G ).20
p
5.5 (Power) gain flatness (ΔG ) .20
p
5.6 (Maximum available) gain reduction (ΔG ) .21
red
5.7 Limiting output power (P ) .22
o(ltg)
5.8 Output power (P ) .23
o
5.9 Output power at 1 dB gain compression (P ) .24
o(1dB)
5.10 Noise figure (F) .25
5.11 Intermodulation distortion (two-tone) (P /P ).27
1 n
5.12 Power at the intercept point (for intermodulation products) (P ) .29
n(IP)
5.13 Magnitude of the input reflection coefficient (input return loss) (|S |) .30
11
5.14 Magnitude of the output reflection coefficient (output return loss) (|S |) .31
22
5.15 Magnitude of the reverse transmission coefficient (isolation) (⏐S ⏐).35
12
5.16 Conversion coefficient of amplitude modulation to phase modulation (α ) .36
(AM-PM)
5.17 Group delay time (t ).38
d(grp)
5.18 Power added efficiency .39
5.19 nth order harmonic distortion ratio (P /P ) .41
1 nth
5.20 Output noise power (P ).42
N
5.21 Spurious intensity under specified load VSWR (P /P ) .44
o sp
5.22 Adjacent channel power ratio (P /P ) .46
o(mod) adj
6 Verifying methods.49
6.1 Load mismatch tolerance (Ψ ) .49
L
6.2 Source mismatch tolerance (Ψ ) .52
S
6.3 Load mismatch ruggedness (Ψ ).55
R

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60747-16-1 © IEC:2001+A1:2007(E) – 3 –
Figure 1 – Circuit for the measurements of linear gain .17
Figure 2 – Basic circuit for the measurement of the noise figure .25
Figure 3 – Basic circuit for the measurements of two-tone intermodulation distortion .27
Figure 4 – Circuit for the measurements of magnitude of input/output reflection
coefficient (input/output return loss).30
Figure 5 – Circuit for the measurement of output reflection coefficient .33
Figure 6 – Circuit for the measurement of isolation .35
Figure 7 – Basic circuit for the measurement of α .36
(AM-PM)
Figure 8 – Circuit for the measurement of the power added efficiency.39
Figure 9 – Circuit for the measurements of the nth order harmonic distortion ratio .41
Figure 10 – Circuit diagram for the measurement of the output noise power .43
Figure 11 – Circuit diagram for the measurement of the spurious intensity.45
Figure 12 – Circuit for the measurement of the adjacent channel power ratio.47
Figure 13 – Circuit for the verification of load mismatch tolerance in method 1 .50
Figure 14 – Circuit for the verification of load mismatch tolerance in method 2 .51
Figure 15 – Circuit for the verification of source mismatch tolerance in method 1.53
Figure 16 – Circuit for the verification of source mismatch tolerance in method 2.54
Figure 17 – Circuit for the verification of load mismatch ruggedness .55

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INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________

SEMICONDUCTOR DEVICES –

Part 16-1: Microwave integrated circuits – Amplifiers



FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
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indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.

International Standard IEC 60747-16-1 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
This consolidated version of IEC 60747-16-1 consists of the first edition (2001) [documents
47E/200/FDIS and 47E/204/RVD] and its amendment 1 (2007) [documents 47E/305/FDIS and
47E/317/RVD].
The technical content is therefore identical to the base edition and its amendment and has
been prepared for user convenience.
It bears the edition number 1.1.
A vertical line in the margin shows where the base publication has been modified by
amendment 1.

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60747-16-1 © IEC:2001+A1:2007(E) – 5 –
The committee has decided that the contents of the base publication and its amendments will
remain unchanged until the maintenance result date indicated on the IEC web site under
"http://webstore.iec.ch" in the data related to the specific publication. At this date,
the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
A bilingual version of this standard may be issued at a later date.

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SEMICONDUCTOR DEVICES –

Part 16-1: Microwave integrated circuits – Amplifiers


1 Scope
This part of IEC 60747 provides the terminology, the essential ratings and characteristics, as
well as the measuring methods for integrated circuit microwave power amplifiers.
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the referenced document (including any amendments) applies.
IEC 60617:2001, Graphical symbols for diagrams
IEC 60747-1:2006, Semiconductor devices – Part 1: General
IEC 60747-4:-, Semiconductor devices – Discrete devices – Part 4: Microwave diodes and
1
transistors
IEC 60747-7:2000, Semiconductor devices – Part 7: Bipolar transistors
IEC 60747-16-2:2001, Semiconductor devices – Part 16-2: Microwave integrated circuits –
Frequency prescalers
IEC 60747-16-4:2004, Semiconductor devices – Part 16-4: Microwave integrated circuits –
Switches
IEC 60748-2:1997, Semiconductor devices – Integrated circuits – Part 2: Digital integrated
circuits
IEC 60748-3:1986, Semiconductor devices – Integrated circuits – Part 3: Analogue integrated
circuits
IEC 60748-4:1997, Semiconductor devices – Integrated circuits – Part 4: Interface integrated
circuits
IEC/TS 61340-5-1:1998, Electrostatics - Part 5-1: Protection of electronic devices from
electrostatic phenomena - General requirements
IEC/TS 61340-5-2:1999, Electrostatics - Part 5-2: Protection of electronic devices from
electrostatic phenomena - User guide
3 Terminology
3.1
linear (power) gain G
lin
power gain in the linear region of the power transfer curve P (dBm) = f(P )
o i
NOTE In this region, ΔP (dBm) = ΔP (dBm).
o i
———————
1
 The second edition of IEC 60747-4, which is cited in this standard, and to which terms introduced in this
amendment refer, is currently in preparation (ADIS).

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60747-16-1 © IEC:2001+A1:2007(E) – 7 –
3.2
linear (power) gain flatness ΔG
lin
power gain flatness when the operating point lies in the linear region of the power transfer
curve
3.3
power gain G , G
p
ratio of the output power to the input power
NOTE Usually the power gain is expressed in decibels.
3.4
(power) gain flatness ΔG
p
difference between the maximum and minimum power gain for a specified input power in a
specified frequency range
3.5
(maximum available) gain reduction ΔG
red
difference in decibels between the maximum and minimum power gains that can be provided
by the gain control
3.6 Output power limiting
3.6.1
output power limiting range
range in which, for rising input power, the output power is limiting
NOTE For specification purposes, the limits of this range are specified by specified lower and upper limit values
for the input power.
3.6.2
limiting output power P
o(ltg)
output power in the range where it is limiting
3.6.3
limiting output power flatness ΔP
o(ltg)
difference between the maximum and minimum output power in the output power limiting
range:
ΔP = P – P
o(ltg) o(ltg,max) o(ltg,min)
3.7
intermodulation distortion P /P
1 n
ratio of the fundamental component of the output power to the nth order component of the
output power, at a specified input power
3.8
power at the intercept point (for intermodulation products) P
n(IP)
output power at intersection between the extrapolated output powers of the fundamental
component and the nth order intermodulation components, when the extrapolation is carried
out in a diagram showing the output power of the components (in decibels) as a function of
the input power (in decibels)
3.9
magnitude of the input reflection coefficient
(input return loss)
|S |
11
see 3.5.2.1 of IEC 60747-7

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3.10
magnitude of the output reflection coefficient
(output return loss)
|S |
22
see 3.5.2.2 of IEC 60747-7
3.11
magnitude of the reverse transmission coefficient
(isolation)
|S |
12
see 3.5.2.4 of IEC 60747-7
3.12
conversion coefficient of amplitude modulation to phase modulation α
(AM-PM)
quotient of
the phase deviation of the output signal (in degrees) by
the change in input power (in decibels) producing it
3.13
group delay time t
d(grp)
ratio of the change, with angular frequency, of the phase shift through the amplifier
NOTE Usually group delay time is very close in value to input-to-output delay time.
3.14
nth order harmonic distortion ratio P /P
1 nth
ratio of the power of the fundamental frequency measured at the output port of the device to
the power of the nth order harmonic component measured at the output port for a specified
output power
3.15
output noise power P
N
maximum noise power measured at the output port of the device within a specified bandwidth
in a specified frequency range for a specified output power
3.16
spurious intensity under specified load VSWR P /P
o sp
ratio of the power of the fundamental frequency measured at the output port of the device to
the maximum spurious power measured at the output port under specified load VSWR
3.17
output power
P
o
see 3.3 of IEC 60747-16-2
3.18
output power at 1 dB gain compression
P
o(1dB)
see 8.2.13 of IEC 60747-4
3.19
noise figure
F
see 702-08-57 of IEC 60050-702

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60747-16-1 © IEC:2001+A1:2007(E) – 9 –
3.20
power added efficiency
η
add

see 8.2.15 of IEC 60747-4
3.21
adjacent channel power ratio
P /P
o(mod) adj
see 3.10 of IEC 60747-16-4
3.22
load mismatch tolerance
Ψ
L
see 7.2.20 of IEC 60747-4
3.23
source mismatch tolerance
Ψ
S
see 7.2.21 of IEC 60747-4
3.24
load mismatch ruggedness
Ψ
R
see 7.2.22 of IEC 60747-4
4 Essential ratings and characteristics
4.1 General
4.1.1 Circuit identification and types
4.1.1.1 Designation and types
The indication of type (device name), the category of the circuit and the technology applied
should be given.
Microwave amplifiers are divided into four categories:
Type A: Low-noise type.
Type B: Auto-gain control type.
Type C: Limiting type.
Type D: Power type.
4.1.1.2 General function description
A general description of the function performed by the integrated circuit microwave amplifiers
and the features for the application should be made.
4.1.1.3 Manufacturing technology
The manufacturing technology, for example, semiconductor monolithic integrated circuit, thin-
film integrated circuit, micro-assembly, should be stated. This statement should include
details of the semiconductor technologies such as MESFET, MISFET, Si bipolar transistor,
HBT, etc.

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4.1.1.4 Package identification
The following statements should be made:
a) IEC and/or national reference number of the outline drawing, or drawing of non-standard
package including terminal numbering;
b) principal package material; for example, metal, ceramic, plastic.
4.1.1.5 Main application
The main application should be stated, if necessary. If the device has restrictive applications,
these should be stated here.
4.2 Application related description
Information on the application of the integrated circuit and its relation to the associated
devices should be given.
4.2.1 Conformance to system and/or interface information
It should be stated whether the integrated circuit conforms to an application system and/or
interface standard or recommendation.
The detailed information about application systems, equipment and circuits such as VSAT
systems, DBS receivers, microwave landing systems, etc., should also be given.
4.2.2 Overall block diagram
A block diagram of the applied systems should be given, if necessary.
4.2.3 Reference data
The most important properties to permit comparison between derivative types should be given.
4.2.4 Electrical compatibility
It should be stated whether the integrated circuit is electrically compatible with other particular
integrated circuits or families of integrated circuits or whether special interfaces are required.
Details should be given of the type of the input and output circuits, for example, input/output
impedances, d.c. block, open-drain, etc. Interchangeability with other devices, if any, should
be given.
4.2.5 Associated devices
If applicable, the following should be stated here:
– devices necessary for correct operation (list with type number, name, and function);
– peripheral devices with direct interfacing (list with type number, name, and function).
4.3 Specification of the function
4.3.1 Detailed block diagram – Functional blocks
A detail block diagram or equivalent circuit information of the integrated circuit microwave
amplifiers should be given. The block diagram should be composed of the following:
1) functional blocks;
2) mutual interconnections among the functional blocks;

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60747-16-1 © IEC:2001+A1:2007(E) – 11 –
3) individual functional units within the functional blocks;
4) mutual interconnections among the individual functional blocks;
5) function of each external connection;
6) interdependence between the separate functional blocks.
The block diagram should identify the function of each external connection and, where no
ambiguity can arise, can also show the terminal symbols and/or numbers. If the encapsulation
has metallic parts, any connection to them from external terminals should be indicated. The
connections with any associated external electrical elements should be stated, where necessary.
As additional information, the complete electrical circuit diagram can be reproduced, but not
necessarily with indications of the values of the circuit components. The graphical symbol for
the function shall be given. This may be obtained from a catalogue of standards of graphical
symbols or designed according to the rules of IEC 60617.
4.3.2 Identification and function of terminals
All terminals should be identified on the block diagram (supply terminals, input or output
terminals, input/output terminals).
The terminal functions 1)-4) should be indicated in a table as follows:
Terminal Terminal 1) Terminal 2) Function Function of terminal
number symbol designation
3) Input/output 4) Type of
identification input/output circuit



1) Terminal name
A terminal name to indicate the function terminal should be given. Supply terminals,
ground terminals, blank terminals (with abbreviation NC), non-usable terminals (with
abbreviation NU) should be distinguished.
2) Function
A brief indication of the terminal function should be given.
– Each function of multi-role terminals, that is terminals that have multiple functions.
– Each function of the integrated circuit selected by mutual pin connections,
programming and/or application of function selection data to the function selection pin,
such as mode selection pin.
3) Input/output identification
Input, output, input/output, and multiplex input/output terminals should be distinguished.
4) Type of input/output circuits
The type of the input and output circuits, for example, input/output impedances, with or
without d.c. block, etc., should be distinguished.
5) Type of ground
If the baseplate of the package is used as ground, this should be stated.

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Example:
Supply voltage
Integrated
Input(s)
NC
circuit
microwave
NU Output(s)
amplifiers
Ground

4.3.3 Functional description
The function performed by the circuit should be specified, including the following information:
– basic function;
– relation to external terminals;
– operation mode (for example, set-up method, preference, etc.);
– interrupt handling.
4.3.4 Family-related characteristics
In this part, all the family-specific functional descriptions shall be stated (refer to IEC 60748-2,
IEC 60748-3 and IEC 60748-4).
If ratings and characteristics and function characteristics exist for the family, the relevant part
of IEC 60748 should be used (for example, for microprocessors, see IEC 60748-2, Chapter III,
Section 3).
NOTE For each new device family, specific items shall be added in the relevant part of IEC 60748.
4.4 Limiting values (absolute maximum rating system)
The table of these values contains the following.
a) Any interdependence of limiting conditions shall be specified.
b) If externally connected and/or attached elements, for example heatsinks, have an
influence on the values of the ratings, the ratings shall be prescribed for the integrated
circuit with the elements connected and/or attached.
c) If limiting values are exceeded for transient overload, the permissible excess and their
duration shall be specified.
d) Where minimum and maximum values differ during programming of the device, this should
be stated.
e) All voltages are referenced to a specified reference terminal (V , G , etc.).
ss ND
f) In satisfying the following clauses, if maximum and/or minimum values are quoted, the
manufacturer must indicate whether he refers to the absolute magnitude or to the
algebraic value of the quantity.
g) The ratings given must cover the operation of the multi-function integrated circuit over the
specified range of operating temperatures. Where such ratings are temperature-
dependent, this dependence should be indicated.

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60747-16-1 © IEC:2001+A1:2007(E) – 13 –
4.4.1 Electrical limiting values
Limiting values should be specified as follows.
Parameters Min. Max.
(1) Power supply voltages + +
(2) Power supply currents (where appropriate) +
(3) Input voltage(s) (where appropriate) + +
(4) Output voltage(s) (where appropriate) + +
(5) Input current(s) (where appropriate) +
(6) Output current(s) (where appropriate) +
(7) Other terminal voltage(s) (where appropriate) + +
(8) Other terminal current(s) (where appropriate) +
(9) Voltage difference between input and output + +
(where appropriate)
(10) Power dissipation +

The detail specification may indicate those values within the table including note 1 and note 2.
Parameters (Note 1, Note 2) Symbols Min. Max. Unit

NOTE 1  Where appropriate, in accordance with the type of circuit considered.
NOTE 2  For power supply voltage range:
– limiting value(s) of the continuous voltage(s) at the supply terminal(s) with
respect to a special electrical reference point;
– where appropriate, limiting value between specified supply terminals;
– when more than one voltage supply is required, a statement should be made as
to whether the sequence in which these supplies are applied is significant: if so,
the sequence should be stated;
– when more than one supply is needed, it may be necessary to state the
combinations of ratings for these supply voltages and currents.
4.4.2 Temperatures
1) Operating temperature
2) Storage temperature
3) Channel temperature (type C and type D only)
4) Lead temperature (for soldering).
The detail specification may indicate those values within the table including the note.
Parameters (N
...

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