IEC 60747-2:2016

Semiconductor devices - Part 2: Discrete devices - Rectifier diodes

IEC 60747-2:2016 provides standards for the following categories or sub-categories of rectifier diodes, including:
- line rectifier diodes;
- avalanche rectifier diodes;
- fast-switching rectifier diodes;
- Schottky barrier diodes.
This edition includes the following significant technical changes with respect to the previous edition:
a) Schottky barrier diodes and its properties are added;
b) Clauses 3, 4, 5 and 7 were amended with some deletions of information no longer in use or already included in other parts of the IEC 60747 series, and with some necessary additions;
c) Clause 6 was moved and added to Clause 7 of this third edition;
d) some parts of Clause 7 were moved and added to Clause 7 of this third edition;
e) Annex A was deleted.
This publication is to be read in conjunction with IEC 60747-1:2006.

Dispositifs à semiconducteurs - Partie 2: Dispositifs discrets - Diodes de redressement

L'IEC 60747-2:2016 donne les normes pour les catégories et sous-catégories suivantes de diodes de redressement, comprenant:
- diodes de redressement de ligne;
- diodes de redressement à avalanche;
- diodes de redressement à commutation rapide;
- diodes à barrière de Schottky.
Cette édition inclut les modifications techniques majeures suivantes par rapport à l'édition précédente:
a) les diodes à barrière de Schottky et leurs propriétés ont été ajoutées;
b) les Articles 3, 4, 5 et 7 ont été modifiés en procédant d'une part à des suppressions d'informations ne faisant plus l'objet d'une application ou figurant déjà dans d'autre parties de la série IEC 60747, et d'autre part à des ajouts nécessaires;
c) l'Article 6 a été déplacé et ajouté à l'Article 7 de la présente troisième édition;
d) certaines parties de l'Article 7 ont été déplacées et ajoutées à l'Article 7 de la présente troisième édition;
e) l'Annexe A a été supprimée.
Cette publication doit être lue conjointement avec la IEC 60747-1:2006.

General Information

• Status: Published
• Publication Date: 12-Apr-2016
• ICS: 31.080.10 - Diodes
• Technical Committee: SC 47E - Discrete semiconductor devices
• Drafting Committee: WG 3 - TC 47/SC 47E/WG 3
• Current Stage: PPUB - Publication issued
• Start Date: 13-Apr-2016
• Completion Date: 15-Apr-2016

Relations

• Revised: IEC 60747-2:2025 - Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
• Effective Date: 05-Sep-2023
• Revises: IEC 60747-2:2000 - Semiconductor devices - Discrete devices and integrated circuits - Part 2: Rectifier diodes
• Effective Date: 05-Sep-2023

Standards Content (Sample)

IEC 60747-2 ®
Edition 3.0 2016-04
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 2: Discrete devices – Rectifier diodes

Dispositifs à semiconducteurs –
Partie 2: Dispositifs discrets – Diodes de redressement

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IEC 60747-2 ®
Edition 3.0 2016-04
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 2: Discrete devices – Rectifier diodes

Dispositifs à semiconducteurs –

Partie 2: Dispositifs discrets – Diodes de redressement

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.10 ISBN 978-2-8322-3295-8

– 2 – IEC 60747-2:2016 © IEC 2016
CONTENTS
FOREWORD . 5
1 Scope . 7
2 Normative references. 7
3 Terms and definitions . 7
3.1 General terms and definitions . 7
3.2 Voltages . 8
3.3 Currents . 9
3.4 Power dissipation . 10
3.5 Switching characteristics . 11
4 Letter symbols . 14
4.1 General . 14
4.2 List of letter symbols . 14
4.2.1 Voltages . 14
4.2.2 Currents . 14
4.2.3 Powers . 15
4.2.4 Switching . 15
5 Essential ratings and characteristics . 16
5.1 General . 16
5.2 Ratings (limiting conditions) . 16
5.2.1 Storage temperature (T ) . 16
stg
5.2.2 Operating ambient or heatsink or case or junction temperature (T or T
a s
or T or T ) . 16
c vj
5.2.3 Non-repetitive peak reverse voltage (V ) . 16
RSM
5.2.4 Repetitive peak reverse voltage (V ) (where appropriate) . 16
RRM
5.2.5 Continuous (direct) reverse voltage (V ) (where appropriate). 16
R
5.2.6 Mean forward current (I ) . 16
F(AV)
5.2.7 R.M.S forward current (I ) . 16
F(R.M.S.)
5.2.8 Repetitive peak forward current (I ) (where appropriate) . 16
FRM
5.2.9 Non-repetitive surge forward current (I ) . 16
FSM
5.2.10 Continuous (direct) forward current (I ) . 17
F
5.2.11 Peak case non-rupture current (I ) (where appropriate) . 17
RSMC
5.2.12 Non-repetitive surge reverse power dissipation (P ) (for avalanche
RSM
rectifier diodes) . 17
5.2.13 Repetitive peak reverse power dissipation (P ) (for avalanche
RRM
rectifier diodes) . 17
5.2.14 Mean reverse power dissipation (P ) (for avalanche rectifier diodes)
R(AV)
5.2.15 Mounting torque (M) (where appropriate) . 17
5.2.16 Clamping force (F) for disc type diodes (where appropriate) . 17
5.3 Characteristics . 17
5.3.1 General . 17
5.3.2 Forward voltage (V ) . 17
F
5.3.3 Peak forward voltage (V ) (where appropriate) . 18
FM
5.3.4 Breakdown voltage (V ) (of an avalanche rectifier diode) . 18
(BR)
5.3.5 Continuous (direct) reverse current (I ) . 18
R(D)
5.3.6 Repetitive peak reverse current (I ) (where appropriate) . 18
RRM
5.3.7 Recovered charge (Q ) (where appropriate) . 18
r
5.3.8 Total capacitive charge (Q ) (where appropriate) . 18
C
5.3.9 Peak reverse recovery current (I ) (where appropriate) . 18
rrm
5.3.10 Reverse recovery time (t ) (where appropriate) . 19
rr
5.3.11 Reverse recovery energy (E ) (where appropriate) . 19
rr
5.3.12 Forward recovery time (t ) (where appropriate) . 19
fr
5.3.13 Peak forward recovery voltage (V ) (where appropriate) . 19
FRM
5.3.14 Reverse recovery softness factor (S ) (where appropriate) . 19
rr
5.3.15 Thermal resistance (R ) . 19
th
5.3.16 Transient thermal impedance (Z (t)) (where appropriate) . 19
th
6 Measuring and test methods . 19
6.1 Measuring methods for electrical characteristics . 19
6.1.1 General . 19
6.1.2 Forward voltage (V , V ) . 20
F FM
6.1.3 Breakdown voltage (V ) of avalanche rectifier diodes . 23
(BR)
6.1.4 Reverse current (I ) . 23
R
6.1.5 Repetitive peak reverse current (I ) . 24
RRM
6.1.6 Recovered charge, reverse recovery time, reverse recovery energy and
softness factor (Q , t , E , S ) . 25
r rr rr rr
6.1.7 Forward recovery time (t ) and peak forward recovery voltage (V ) . 30
fr frm
6.1.8 Total capacitive charge (Q ) . 32
C
6.2 Measuring methods for thermal characteristics . 33
6.2.1 General . 33
6.2.2 Thermal resistance (R ) and transient thermal impedance (Z
th(j-r) th(j-
(t)) . 33
r)
6.3 Verification test methods for ratings (limiting values) . 35
6.3.1 Surge (non-repetitive) forward current (I ) . 35
FSM
6.3.2 Non-repetitive peak reverse voltage (V ) . 36
RSM
6.3.3 Peak reverse power (repetitive or non-repetitive) (P , P ) of
RRM RSM
avalanche rectifier diodes . 38
6.3.4 Peak case non-rupture current (I ) . 41
RSCM
7 Requirements for type tests, routine tests and endurance tests; marking of
rectifier diodes . 43
7.1 Type tests . 43
7.2 Routine tests . 43
7.3 Measuring and test methods . 44
7.4 Marking of rectifier diodes . 44
7.5 Endurance test . 44
7.5.1 List of endurance tests . 44
7.5.2 Conditions for endurance tests . 44
7.5.3 Acceptance-defining characteristics and acceptance criteria for
endurance tests . 44
7.5.4 Acceptance-defining characteristics and acceptance criteria for
reliability tests . 45

Figure 1 – Voltage waveform during forward recovery, specification method I . 11
Figure 2 – Voltage waveform during forward recovery, specification method II . 11
Figure 3 – Current waveform during reverse recovery . 12
Figure 4 – Diode turn-off, voltage, current and recovered charge . 13
Figure 5 – Reverse voltage ratings . 14

– 4 – IEC 60747-2:2016 © IEC 2016
Figure 6 – Forward current ratings . 15
Figure 7 – Recovered charge Q , peak reverse recovery current I , reverse recovery
r rrm
time t (idealized characteristics) . 18
rr
Figure 8 – Circuit diagram for the measurement of forward voltage (d.c. method) . 20
Figure 9 – Circuit diagram for the measurement of forward voltage (oscilloscope
method) . 21
Figure 10 – Graphic representation of on-state voltage versus current characteristic . 21
Figure 11 – Circuit diagram for forward voltage measurement (pulse method) . 22
Figure 12 – Circuit diagram for breakdown voltage measurement . 23
Figure 13 – Circuit diagram for reverse current measurement . 24
Figure 14 – Circuit diagram for peak reverse current measurement . 25
Figure 15 – Circuit diagram for recovered charge measurement, half sinusoidal wave
method . 26
Figure 16 – Current waveform through the diode D during recovered charge
measurement, half sinusoidal wave method . 26
Figure 17 – Circuit diagram for recovered charge measurement, rectangular wave
method . 28
Figure 18 – Current waveform through the diode D recovered charge measurement,
rectangular wave method . 28
Figure 19 – Circuit diagram for forward recovery time measurement . 30
Figure 20 – Current waveform forward recovery time measurement . 30
Figure 21 – Voltage waveform forward recovery time measurement . 31
Figure 22 – Circuit diagram for total capacitive charge measurement . 32
Figure 23 – Circuit diagram for thermal impedance measurement . 33
Figure 24 – Calibration curve showing a typical variation of the forward voltage V at
F
a low measuring current I with the case temperature T (when heated from outside,
2 c
i.e. T = T ) . 34
c
vj
Figure 25 – Circuit diagram for surge forward current measurement . 35
Figure 26 – Circuit diagram for peak reverse voltage measurement . 37
Figure 27 – Circuit to verify peak reverse power of avalanche rectifier diodes . 38
Figure 28 – Triangular reverse current waveform . 39
Figure 29 – Sinusoidal reverse current waveform. 39
Figure 30 – Rectangular reverse current waveform . 40
Figure 31 – Verification of P reverse power versus breakdown. 41
RSM
Figure 32 – Circuit diagram for case non-rupture current measurement . 42
Figure 33 – Waveform of the reverse current i through the diode under test . 42
R
Table 1 – Minimum type and routine tests for rectifier diodes . 44
Table 2 – Acceptance-defining characteristics for acceptance after endurance tests . 45

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
Part 2: Discrete devices – Rectifier diodes

FOREWORD
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patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60747-2 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
This third edition cancels and replaces the second edition published in 2000. This edition
constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous
edition:
a) Schottky barrier diodes and its properties are added;
b) Clauses 3, 4, 5 and 7 were amended with some deletions of information no longer in use
or already included in other parts of the IEC 60747 series, and with some necessary
additions;
c) Clause 6 was moved and added to Clause 7 of this third edition;
d) some parts of Clause 7 were moved and added to Clause 7 of this third edition;

– 6 – IEC 60747-2:2016 © IEC 2016
e) Annex A was deleted.
This standard is to be used in conjunction with IEC 60747-1:2006 and Amendment 1: 2010.
The text of this standard is based on the following documents:
FDIS Report on voting
47E/531/FDIS 47E/537/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC 60747 series, published under the general title Semiconductor
devices, can be found on the IEC website.
Future standards in this series will carry the new general title as cited above. Titles of existing
standards in this series will be updated at the time of the next edition.
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC website under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
SEMICONDUCTOR DEVICES –
Part 2: Discrete devices – Rectifier diodes

1 Scope
This part of IEC 60747 provides standards for the following categories or sub-categories of
rectifier diodes, including:
• line rectifier diodes;
• avalanche rectifier diodes;
• fast-switching rectifier diodes;
• Schottky barrier diodes.
2 Normative references
The following documents, in whole or in part, are normatively referenced in this document and
are indispensable for its application. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC 60050-521, International Electrotechnical Vocabulary – Part 521: Semiconductor devices
and integrated circuits (available at http://www.electropedia.org)
IEC 60747-1:2006, Semiconductor devices – Part 1: General
IEC 60747-1:2006/AMD1: 2010
IEC 60749-23, Semiconductor devices – Mechanical and climatic test methods – Part 23: High
temperature operating life
IEC 60749-34, Semiconductor devices – Mechanical and climatic test methods – Part 34:
Power cycling
3 Terms and definitions
For the purposes of this document, the terms and definitions given in IEC 60747-1, in
IEC 60050-521 (except for definitions 521-05-18, 521-05-25, 521-05-26) and the following
apply.
3.1 General terms and definitions
3.1.1
forward direction
direction of the flow of continuous (direct) current in which a semiconductor diode has the
lower resistance
3.1.2
reverse direction
direction of the flow of continuous (direct) current in which a semiconductor diode has the
higher resistance
– 8 – IEC 60747-2:2016 © IEC 2016
3.1.3
anode terminal
terminal to which forward current flows from the external
circuit
3.1.4
cathode terminal
terminal from which forward current flows to the external
circuit
3.2 Voltages
3.2.1
forward voltage
V
F
voltage across the terminals which results from the flow of current in the forward direction
3.2.2
peak forward voltage
crest forward voltage
V
FM
voltage across the terminal which results from a p times higher current than the specified
mean current
3.2.3
forward recovery voltage
V
fr
varying voltage occurring during the forward recovery time after instantaneous switching from
zero or a specified reverse voltage to a specified forward current
3.2.4
reverse voltage
V
R
constant voltage applied to a diode in the reverse direction
3.2.5
repetitive peak reverse voltage
V
RRM
highest instantaneous value of the reverse voltage, including all repetitive transient voltages,
but excluding all non-repetitive transient voltages
Note 1 to entry: See Figure 5.
3.2.6
non-repetitive peak reverse voltage
peak transient reverse voltage
V
RSM
highest instantaneous value of any non-repetitive transient reverse voltage
Note 1 to entry: The repetitive voltage is usually a function of the circuit and increases the power dissipation of
the device. A non-repetitive transient voltage is usually due to an external cause and it is assumed that its effect
has completely disappeared before the next transient arrives.
3.2.7
breakdown voltage
V
(BR)
voltage in the region where breakdown occurs

3.3 Currents
3.3.1
forward current
I
F
current flowing through the diode in forward direction
3.3.2
mean forward current
I
F(AV)
value of the forward current averaged over the full cycle
3.3.3
r.m.s. forward current
I
F(R.M.S.)
r.m.s value of the forward current over one complete cycle of the operating frequency
Note 1 to entry: Where no ambiguity arises, I may be used.
F(RMS)
3.3.4
peak forward current
I
FM
maximum value of forward current time function
3.3.5
repetitive peak forward current
I
FRM
peak value of the forward current including all repetitive transient currents
Note 1 to entry: See Figure 6.
3.3.6
non-repetitive surge forward current
I
FSM
forward current pulse of short time duration and specified waveshape, whose application
causes or would cause the maximum rated junction temperature to be exceeded, but which is
assumed to occur rarely and with a limited number of such occurrences during the service life
of the device and to be a consequence of unusual circuit conditions (for example a fault)
Note 1 to entry: See Figure 6.
3.3.7
reverse current
I
R
current flowing through the diode when reverse voltage is applied
3.3.8
reverse recovery current
I
rr
part of the reverse current which occurs during the reverse recovery until quasi static
conditions have been reached
3.3.9
t value
I
integral of the square of a surge forward current over the duration of the current surge

– 10 – IEC 60747-2:2016 © IEC 2016
3.3.10
peak case non-rupture current
I
RSMC
peak value of reverse current that should not be exceeded in order to avoid bursting of the
case or the emission of a plasma beam under specified conditions of current, waveshape and
time
Note 1 to entry: This definition implies that a fine crack in the case might be found in a device subjected to the
peak case non-rupture current, provided that no plasma beam was emitted. Parts of the case shall not break away,
nor shall the device melt externally or burst into flames.
3.4 Power dissipation
3.4.1
total power dissipation
P
tot
sum of the dissipations due to current in the forward and reverse direction and during
switching
3.4.2
forward power dissipation
P
F
power dissipation due to the flow of forward current
3.4.3
mean forward power dissipation
P
F(AV)
mean value of the product of the instantaneous forward voltage and the instantaneous
forward current averaged over a full cycle
3.4.4
reverse power dissipation
P
R
power dissipation resulting from the flow of reverse current
3.4.5
forward recovery dissipation
P
fr
power dissipated within the diode during the change between reverse voltage and forward
current when the diode is switched from a reverse voltage to a forward current
3.4.6
reverse recovery dissipation
P
rr
power dissipated within the diode during the change between forward current and reverse
voltage when the diode is switched from a forward current to a reverse voltage
3.4.7
surge reverse power dissipation
P
RSM
power which is dissipated within the diode resulting from surges
occurring when it is operating in the reverse direction
3.4.8
repetitive peak reverse power dissipation
P
RRM
power which is dissipated within the diode resulting from
repetitive peak currents when it is operating in the reverse direction

3.4.9
mean reverse power dissipation
P
R(AV)
power which is dissipated within the diode resulting from
constant reverse current or as a mean value of a periodical function when it is operating in the
reverse direction
3.5 Switching characteristics
3.5.1
forward recovery time
t
fr
time interval between the instant when the forward voltage rises through a specified first value
and the instant when it falls from its peak value V to a specified second value close to the
frm
final stable value of forward voltage (as shown in Figure 1), or when the extrapolated forward
voltage reaches zero (as shown in Figure 2), upon the application of a specified step of
forward current following a zero-voltage or other specified reverse-voltage condition
v
V
frm
1,1 V
F
V
F
t
0,1 V
t
F
fr
IEC
Figure 1 – Voltage waveform during forward recovery, specification method I
v
V
frm
A
B
V
F
t
0,1 V
t
F
fr
IEC
Figure 2 – Voltage waveform during forward recovery, specification method II
Note 1 to entry: Specification method I: The specified first and second values referred to in the definition are
usually 10 % and 110 %, respectively, of the final stable value (V in Figure 1).
F
Note 2 to entry: Specification method II: The extrapolation is carried out with respect to specified points A and B
where A and B are usually 90 % and 50 % of V as shown in generalized form in Figure 2.
frm
Note 3 to entry: Method I is preferred for V values up to about 10 V; method II for values considerably higher.
frm
– 12 – IEC 60747-2:2016 © IEC 2016
[SOURCE: IEC 60050-521:2002, 521-05-25, modified — revised to relate only to forward
voltage; notes to entry and figures added]
3.5.2
reverse recovery time
t
rr
time interval between the instant when the current passes through zero, when changing from
the forward direction to the reverse direction, and the instant when the extrapolated reverse
current reaches zero (as shown in Figure 3)
i
I
FM
t
rr
t t
rrr rrf
t
B
A
I
rrm
di
rrr
di
(   )
rrf
i=0
dt
(   )
max
dt
IEC
Figure 3 – Current waveform during reverse recovery
Note 1 to entry: The extrapolation is carried out with respect to specified points A and B as shown in generalised
form in Figure 3. Point A is often specified at 90 % of I , and point B at 25 % of I .
rrm rrm
[SOURCE: IEC 60050-521:2002, 521-05-26, modified — revised to relate only to current with
specified limits of the time function; notes to entry and figures added]
3.5.3
reverse recovery current rise time
t
rrr
time interval between the beginning of the reverse recovery time and the instant when the
reverse recovery current reaches its peak value after instantaneous switching from a specified
forward current to a specified reverse voltage
3.5.4
reverse recovery current fall time
t
rrf
time interval between the instant when the reverse recovery current reaches its peak value
and the end of reverse recovery time after instantaneous switching from a specified forward
current to a specified reverse voltage
3.5.5
recovered charge
Q
r
total charge recovered from the diode during a specified integration time after switching from
a specified forward current condition to a specified reverse condition:

t +t
0 i
Q = i ⋅ dt
r
∫
t
where
t is the instant when the current passes through zero;
t is the specified integration time from t to a time where i has fallen to 2 % of I (as
i 0 rr rrm
shown in Figure 4).
i, v
I
F
t
i
V
F
0,02 I
rrm
t
t
Q
r
I
rrm
V
R
IEC
Figure 4 – Diode turn-off, voltage, current and recovered charge
Note 1 to entry: This charge includes components due to both carrier storage and depletion layer capacitance.
[SOURCE: IEC 60050-521:2002, 521-05-18, modified — revised to relate only to diode and
added integration time; formula and figure added]
3.5.6
capacitive charge
Q
C
the charge required to raise the cathode-anode voltage from zero to
a specified value
3.5.7
reverse recovery energy
E
rr
switching energy which results from the integration of the product from device voltage and
current during the integration time t of recovered charge
i
Note 1 to entry: t is shown in Figure 4.
i
3.5.8
reverse recovery softness factor
S
rr
absolute value of the ratio of the rate of rise of the reverse recovery current when passing
through zero to the maximum rate of fall of the recovery current
(di /dt)
rrr i =0
S =
rr
(di /dt)
rrf max
Note 1 to entry: (di /dt) and (di /dt) are shown in Figure 3.
rrr rrf
– 14 – IEC 60747-2:2016 © IEC 2016
4 Letter symbols
4.1 General
The rules given in IEC 60747-1:2006, Clause 4 apply.
4.2 List of letter symbols
4.2.1 Voltages
Name and designation Letter symbol Remark
Forward voltage V
F
Peak forward voltage V
FM
Reverse voltage V
R
Repetitive peak reverse voltage V
RRM
Non-repetitive peak reverse voltage V
RSM
Breakdown voltage V
(BR)
Forward recovery voltage V
fr
Peak value of forward recovery voltage V
frm
v
F
t
V
RRM
V
RSM
v
R
IEC
Figure 5 – Reverse voltage ratings

4.2.2 Currents
Name and designation Letter symbol Remark
Forward current I
F
Mean forward current I
F(AV)
Repetitive peak forward current I
FRM
r.m.s forward current I I may be used
F(R.M.S.)
F(RMS)
Non-repetitive surge forward current I
FSM
Reverse current I
R
Maximum reverse current I
RM
Peak reverse recovery current I
rrm
Reverse recovery current I
rr
Peak case non-rupture current I
RSMC
i
F
I
FSM
I
FRM
t
i
R
IEC
Figure 6 – Forward current ratings

4.2.3 Powers
Name and designation Letter symbol Remark
Forward power dissipation P
F
Mean forward power dissipation P
F(AV)
Reverse power dissipation P
R
Total power dissipation P
tot
Surge reverse power dissipation P
RSM
Repetitive peak reverse power dissipation P
RRM
Mean reverse power dissipation P
R(AV)
Forward recovery dissipation P
fr
Reverse recovery dissipation P
rr
4.2.4 Switching
Name and designation Letter symbol Remark
Forward recovery time t
fr
Reverse recovery time t
rr
Reverse recovery current rise time t
rrr
Reverse recovery current fall time t
rrf
Recovered charge Q
r
Capacitive charge Q
C
Reverse recovery energy E
rr
Reverse recovery softness factor S
rr
– 16 – IEC 60747-2:2016 © IEC 2016
5 Essential ratings and characteristics
5.1 General
Many of the ratings and characteristics are required to be quoted at a temperature of 25 °C
and at one other specified temperature.
5.2 Ratings (limiting conditions)
5.2.1 Storage temperature (T )
stg
Minimum and maximum values.
5.2.2 Operating ambient or heatsink or case or junction temperature (T or T or T or
a s c
T )
vj
Minimum and maximum values.
NOTE The case temperature is normally measured on the body of the device. For some rectifier diodes, the
temperature is specified on one of the terminals .
5.2.3 Non-repetitive peak reverse voltage (V )
RSM
Maximum value of a pulse of reverse voltage with a half-wave sinusoidal waveform, the
duration of which has to be specified.
5.2.4 Repetitive peak reverse voltage (V ) (where appropriate)
RRM
Maximum value of repetitive reverse voltage pulses, with half-wave sinusoidal waveform,
whose duration and repetition rate have to be specified.
5.2.5 Continuous (direct) reverse voltage (V ) (where appropriate)
R
Maximum value.
5.2.6 Mean forward current (I )
F(AV)
A curve showing maximum values versus ambient or case temperature for single-phase
half-wave circuit with resistive load at a specified frequency. Alternatively curves for other
wave forms may be given.
5.2.7 R.M.S forward current (I )
F(R.M.S.)
Maximum value at a specified ambient or sink or case and virtual junction temperature.
5.2.8 Repetitive peak forward current (I ) (where appropriate)
FRM
Maximum value at a specified ambient or sink or case and virtual junction temperature.
5.2.9 Non-repetitive surge forward current (I )
FSM
Maximum value at initial conditions corresponding to maximum virtual junction temperature, a
specified duration and a subsequently applied reverse voltage. In addition, figures
corresponding to lower initial virtual junction temperatures may be given.
Surge current ratings should be given for the following time periods:
a) For times smaller than one half-cycle (at 50 Hz or 60 Hz), but greater than approximately
1 ms, in terms of maximum rated value of

i dt
∫
These ratings may be given by means of a curve or by specified values. No immediate
subsequent application of reverse voltage is assumed.
b) For times equal to, or greater than, one half-cycle and smaller than 15 cycles (at 50 Hz or
60 Hz) in the form of a curve showing the maximum rated surge current versus time.
These ratings should preferably be given for a reverse voltage of 80 % of the maximum
repetitive peak reverse voltage. Additional ratings may be given for reverse voltage.
Additional ratings may be given for reverse voltages of 50 % or 100 % of the maximum
repetitive peak reverse voltage.
c) For a time equal to one cycle with no reverse voltage applied.
5.2.10 Continuous (direct) forward current (I )
F
Maximum value at a specified ambient or sink or case and virtual junction temperature.
) (where appropriate)
5.2.11 Peak case non-rupture current (I
RSMC
Maximum value for a specified pulse duration and shape and at a specified starting case
temperature, preferably maximum.
5.2.12 Non-repetitive surge reverse power dissipation (P ) (for avalanche rectifier
RSM
diodes)
Maximum value for a specified wave shape (triangular, sinusoidal or rectangular) and duration,
at maximum virtual junction temperature.
5.2.13 Repetitive peak reverse power dissipation (P ) (for avalanche rectifier diodes)
RRM
Maximum value for a specified wave shape (triangular, sinusoidal or rectangular), duration
and duty cycle and a specified ambient or case temperature with zero forward dissipation.
5.2.14 Mean reverse power dissipation (P ) (for avalanche rectifier diodes)
R(AV)
Maximum value at specified wave shape (triangular, sinusoidal or rectangular), duration and
duty cycle and a specified ambient or case temperature with zero forward dissipation.
5.2.15 Mounting torque (M) (where appropriate)
Minimum and maximum values.
5.2.16 Clamping force (F) for disc type diodes (where appropriate)
Minimum and maximum values and the stiffness of the mounting surface shall be specified.
5.3 Characteristics
5.3.1 General
Characteristics shall be given at T = 25 °C except where otherwise stated and a
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