IEC 62047-47:2024

Semiconductor devices - Micro-electromechanical devices - Part 47: Silicon based MEMS fabrication technology - Measurement method of bending strength of microstructures

IEC 62047-47:2024 specifies the requirements and testing method to measure the bending strength of microstructures which are fabricated by micromachining technology used in silicon-based micro-electromechanical system (MEMS).
This document is applicable to the in-situ bending strength measurement of microstructures manufactured by microelectronic technology process and other micromachining technology.
With the devices scaling, the bending strength degradation, induced by defects and contaminations, becomes more severe. This document specifies an in-situ testing method of the bending strength based on MEMS technique. This document does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and special test specimens.
Since in-situ on-chip tester in this document and device are fabricated with the same process on the same wafer, this document can give some practical reference for the design part.

General Information

• Status: Published
• Publication Date: 22-Aug-2024
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: SC 47F - Micro-electromechanical systems
• Current Stage: PPUB - Publication issued
• Start Date: 20-Sep-2024
• Completion Date: 23-Aug-2024

Standards Content (Sample)

IEC 62047-47 ®
Edition 1.0 2024-08
INTERNATIONAL
STANDARD
Semiconductor devices – Micro-electromechanical devices –
Part 47: Silicon based MEMS fabrication technology – Measurement method of
bending strength of microstructures

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IEC 62047-47 ®
Edition 1.0 2024-08
INTERNATIONAL
STANDARD
Semiconductor devices – Micro-electromechanical devices –

Part 47: Silicon based MEMS fabrication technology – Measurement method of

bending strength of microstructures

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99  ISBN 978-2-8322-9556-4

– 2 – IEC 62047-47:2024 © IEC 2024
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 5
4 Requirements . 6
4.1 In-situ on-chip tester design requirements . 6
4.2 In-situ on-chip tester fabrication requirements . 8
4.3 Testing environment requirements . 8
5 Testing method . 8
5.1 General . 8
5.2 Microstructure bending strength testing method operation process . 8
5.3 Microstructure bending strength testing method result process . 9
6 Test report . 10
Annex A (informative) Examples of bending strength testing for microstructures . 11
A.1 General . 11
A.2 Design dimensions of the testing device . 11
A.3 Microstructures bending strength test . 14
Bibliography . 16

Figure 1 – The in-situ on-chip bending strength tester. 6
Figure 2 – Three-view drawing of the testing structure . 7
Figure 3 – Microstructure bending strength testing method operation process . 8
Figure 4 – Scheme of the beam of constant strength . 9
Figure 5 – Scheme of the magnifying lever . 9
Figure 6 – Scheme of the elastic beam . 10
Figure A.1 – Overall dimension labelling of the testing device . 11
Figure A.2 – Local dimension labelling of the testing device . 12
Figure A.3 – Design of the deflection ruler and the displacement ruler . 13
Figure A.4 – Test area . 15

Table 1 – Dimensions for testing structure . 9
Table A.1 – Design dimensions of the testing device. 14
Table A.2 – Microstructure bending strength test results . 15

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 47: Silicon based MEMS fabrication technology –
Measurement method of bending strength of microstructures

FOREWORD
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IEC 62047-47 has been prepared by subcommittee 47F: Micro-electromechanical systems, of
IEC technical committee 47: Semiconductor devices. It is an International Standard.
The text of this International Standard is based on the following documents:
Draft Report on voting
47F/474/FDIS 47F/481/RVD
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
– 4 – IEC 62047-47:2024 © IEC 2024
The language used for the development of this International Standard is English.
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/publications.
A list of all parts in the IEC 62047 series, published under the general title Semiconductor
devices – Micro-electromechanical devices, can be found on the IEC website.
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• revised.
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SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 47: Silicon based MEMS fabrication technology –
Measurement method of bending strength of microstructures

1 Scope
This part of IEC 62047 specifies the requirements and testing method to measure the bending
strength of microstructures which are fabricated by micromachining technology used in silicon-
based micro-electromechanical system (MEMS).
This document is applicable to the in-situ bending strength measurement of microstructures
manufactured by microelectronic technology process and other micromachining technology.
With the devices scaling, the bending strength degradation, induced by defects and
contaminations, becomes more severe. This document specifies an in-situ testing method of
the bending strength based on MEMS technique. This document does not need intricate
instruments (such as scanning probe microscopy and nanoindenter) and special test specimens.
Since in-situ on-chip tester in this document and device are fabricated with the same process
on the same wafer, this document can give some practical reference for the design part.
2 Normative references
There are no normative references in this document.
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminology databases for use in standardization at the following
addresses:
• IEC Electropedia: available at https://www.electropedia.org/
• ISO Online browsing platform: available at https://www.iso.org/obp
3.1
testing structure
nanostructure (for example, cantilevered or fixed beams) specially made to measure the
properties of materials
[SOURCE: IEC 62047-45:2024, 3.1]
3.2
testing device
microstructure that transmits force or displacement to a testing structure and the force or
displacement can be read out at the same time
[SOURCE: IEC 62047-45:2024, 3.2]

– 6 – IEC 62047-47:2024 ©
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