IEC 60747-9:2019

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:  
reverse-blocking IGBT and its related technical contents have been added;
reverse-conducting IGBT and its related technical contents have been added;
some parts of the previous edition have been amended, combined or deleted.

Dispositifs à semiconducteurs - Partie 9: Dispositifs discrets - Transistors bipolaires à grille isolée (IGBT)

L’IEC 60747-9:2019 ED3 spécifie la terminologie, les symboles littéraux, les valeurs assignées et caractéristiques essentielles, la vérification des valeurs assignées ainsi que les méthodes de mesure pour les transistors bipolaires à grille isolée (IGBT, insulated-gate bipolar transistors).
Cette édition inclut les modifications techniques majeures suivantes par rapport à l’édition précédente:  
ajout de transistor bipolaire à grille isolée bloqué en inverse et du contenu technique associé;
ajout de transistor bipolaire à grille isolée passant en inverse et du contenu technique associé;
modification, combinaison ou suppression de certaines parties de l’édition précédente.

General Information

• Status: Published
• Publication Date: 12-Nov-2019
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 31.080.01 - Semiconductor devices in general
• ICS: 31.080.30 - Transistors
• Technical Committee: SC 47E - Discrete semiconductor devices
• Drafting Committee: WG 3 - TC 47/SC 47E/WG 3
• Current Stage: PPUB - Publication issued
• Start Date: 15-Nov-2019
• Completion Date: 13-Nov-2019

Standards Content (Sample)

IEC 60747-9
®

Edition 3.0 2019-11
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE


Semiconductor devices –
Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)

Dispositifs à semiconducteurs –
Partie 9: Dispositifs discrets – Transistors bipolaires à grille isolée (IGBT)

IEC 60747-9:2019-11(en-fr)

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IEC 60747-9

®


Edition 3.0 2019-11




INTERNATIONAL



STANDARD




NORME



INTERNATIONALE











Semiconductor devices –

Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)




Dispositifs à semiconducteurs –

Partie 9: Dispositifs discrets – Transistors bipolaires à grille isolée (IGBT)
















INTERNATIONAL

ELECTROTECHNICAL

COMMISSION


COMMISSION

ELECTROTECHNIQUE


INTERNATIONALE




ICS 31.080.01; 31.080.30 ISBN 978-2-8322-7530-6




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® Registered trademark of the International Electrotechnical Commission
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---------------------- Page: 3 ----------------------
– 2 – IEC 60747-9:2019 © IEC 2019
CONTENTS
FOREWORD . 7
1 Scope . 9
2 Normative references . 9
3 Terms and definitions . 9
3.1 General terms . 9
3.2 Terms related to ratings and characteristics, voltages and currents . 10
3.3 Terms related to ratings and characteristics . 13
4 Letter symbols . 15
4.1 General . 15
4.2 Graphical symbols . 16
4.3 Additional general subscripts . 16
4.4 List of letter symbols . 16
4.4.1 Voltages . 16
4.4.2 Currents . 17
4.4.3 Other electrical magnitudes . 17
4.4.4 Time . 18
4.4.5 Thermal magnitudes . 18
5 Essential ratings and characteristics . 18
5.1 General . 18
5.2 Ratings (limiting values) . 18
5.2.1 General . 18
5.2.2 Ambient or case or virtual junction operating temperature (T or T or
a c
T ) . 18
vj
5.2.3 Storage temperature (T ) . 18
stg
5.2.4 Collector-emitter voltage with gate-emitter short-circuited (V ) . 18
CES
5.2.5 Gate-emitter voltage with collector-emitter short-circuit (V ) . 19
GES
5.2.6 Continuous (direct) reverse voltage of a reverse-blocking IGBT (V ) . 19
R*
5.2.7 Continuous (direct) collector current (I ) . 19
C
5.2.8 Repetitive peak collector current (I ) . 19
CRM
5.2.9 Non-repetitive peak collector current (I ) . 19
CSM
5.2.10 Continuous (direct) reverse-conducting current of a reverse-conducting
IGBT (I ) . 19
RC
5.2.11 Repetitive peak reverse-conducting current of a reverse-conducting
IGBT (I ) . 19
RCRM
5.2.12 Non-repetitive peak reverse-conducting current of a reverse-conducting
IGBT (I ) . 19
RCSM
5.2.13 Total power dissipation (P ) . 19
tot
5.2.14 Maximum forward biased safe operating area (FBSOA) (where
appropriate) . 19
5.2.15 Maximum reverse biased safe operating area (RBSOA) . 19
5.2.16 Maximum short-circuit safe operating area (SCSOA) . 20
5.2.17 Maximum terminal current (I ) (where appropriate) . 20
tRMS
5.2.18 Mounting force (F) . 20
5.2.19 Mounting torque (M) . 20
5.3 Characteristics . 20
5.3.1 General . 20
5.3.2 Collector-emitter breakdown voltage (V ) (where appropriate) . 20
(BR)CES

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IEC 60747-9:2019 © IEC 2019 – 3 –
5.3.3 Collector-emitter sustaining voltage (V ) (where appropriate). 20
CE*sus
5.3.4 Collector-emitter saturation voltage (V ) . 20
CEsat
5.3.5 Gate-emitter threshold voltage (V ) . 20
GE(th)
5.3.6 Reverse-conducting voltage of a reverse-conducting IGBT (V ) . 20
RC
5.3.7 Collector-emitter cut-off current (I ) . 20
CE*
5.3.8 Gate leakage current (I ) . 20
GES
5.3.9 Reverse current of a reverse-blocking IGBT (I ) . 21
R*
5.3.10 Capacitances . 21
5.3.11 Gate charge (Q ) . 21
G
5.3.12 Internal gate resistance (r ) . 21
g
5.3.13 Switching characteristics . 21
5.3.14 Thermal resistance junction to case (R ) . 22
th(j-c)
5.3.15 Thermal resistance junction to ambient (R ) . 22
th(j-a)
5.3.16 Transient thermal impedance junction to case (Z ) . 22
th(j-c)
5.3.17 Transient thermal impedance junction to ambient (Z ) . 23
th(j-a)
6 Measuring methods . 23
6.1 General . 23
6.2 Verification of ratings (limiting values). 23
6.2.1 General . 23
6.2.2 Collector-emitter voltages (V , V , V ) . 23
CES CER CEX
6.2.3 Reverse voltage of a reverse-blocking IGBT (V , V ) . 24
RS RX
6.2.4 Gate-emitter voltage with collector-emitter short-circuit (±V ) . 25
GES
6.2.5 Continuous (direct) collector current (I ) . 26
C
6.2.6 Maximum peak collector current (I and I ) . 27
CRM CSM
6.2.7 Continuous (direct) reverse-conducting current of a reverse-conducing
IGBT (I ) . 28
RC
6.2.8 Maximum peak reverse-conducting current of a reverse-conducting
IGBT (I and I ) . 29
RCRM RCSM
6.2.9 Maximum reverse biased safe operating area (RBSOA) . 30
6.2.10 Maximum short-circuit safe operating area (SCSOA) . 32
6.3 Methods of measurement . 35
6.3.1 Collector-emitter saturation voltage (V ) . 35
CEsat
6.3.2 Gate-emitter threshold voltage (V ) . 36
GE(th)
6.3.3 Reverse-conducting voltage of a reverse-conducting IGBT (V ) . 36
RC
6.3.4 Collector cut-off current (I , I , I ) . 37
CES CER CEX
6.3.5 Gate leakage current (I ) . 38
GES
6.3.6 Reverse current of a reverse-blocking IGBT (I , I ) . 39
RS RX
6.3.7 Input capacitance (C ) . 40
ies
6.3.8 Output capacitance (C ) . 41
oes
6.3.9 Reverse transfer capacitance (C ) . 43
res
6.3.10 Gate charge (Q ) . 43
G
6.3.11 Internal gate resistance (r ) . 45
g
6.3.12 Turn-on times (t , t , t ) and turn-on energy (E ) . 46
d(on) r on on
6.3.13 Turn-off times (t , t , t , t ) and turn-off energy (E ). 48
d(off) f off z off
6.3.14 Peak reverse recovery current (I ), reverse recovery time (t ),
rrm rr
reverse recovery energy (E ) and reverse recovered charge (Q ) of a
rr rr
reverse-blocking IGBT . 49
6.3.15 Peak forward recovery current (I ), forward recovery time (t ),
frm fr
forward recovery energy (E ) and forward recovered charge (Q ) of a
fr fr
reverse-conducting IGBT . 52

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– 4 – IEC 60747-9:2019 © IEC 2019
6.3.16 Thermal resistance junction to case (R ) and transient thermal
th(j-c)
impedance junction to case (Z ) . 54
th(j-c)
7 Acceptance and reliability . 60
7.1 General requirements . 60
7.2 Specific requirements . 60
7.2.1 List of endurance and reliability tests . 60
7.2.2 Conditions for endurance and reliability tests . 60
7.2.3 Acceptance-defining characteristics and criteria for endurance and
reliability tests . 60
7.2.4 Procedure in case of a testing error . 61
7.2.5 Endurance and reliability tests and test methods . 61
7.3 Type tests and routine tests . 64
7.3.1 Type tests. 64
7.3.2 Routine tests . 65
Annex A (normative) Measuring method for collector-emitter breakdown voltage . 66
A.1 General . 66
A.2 Purpose . 66
A.3 Circuit diagram . 66
A.4 Measurement procedure . 66
A.5 Specified conditions . 67
Annex B (normative) Measuring method for collector-emitter sustaining voltage . 68
B.1 General . 68
B.2 Purpose . 68
B.3 Circuit diagram . 68
B.4 Circuit description and requirements . 68
B.5 Measurement procedure . 69
B.6 Precautions to be observed. 69
B.7 Requirements . 69
B.8 Specified conditions . 70
Annex C (normative) Measuring method for inductive load turn-off current under
specified conditions . 71
C.1 General . 71
C.2 Purpose . 71
C.3 Circuit diagram and waveforms . 71
C.4 Circuit description and requirements . 72
C.5 Measurement procedure . 72
C.6 Specified conditions . 72
Annex D (normative) Forward biased safe operating area (FBSOA) . 73
D.1 General . 73
D.2 Purpose . 73
D.3 Method 1 . 73
D.3.1 General . 73
D.3.2 Circuit diagram . 73
D.3.3 Test procedure . 74
D.3.4 Specified conditions. 75
D.4 Method 2 . 75
D.4.1 General . 75
D.4.2 Circuit diagram . 75
D.4.3 Test procedure and precautions to be taken . 76

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IEC 60747-9:2019 © IEC 2019 – 5 –
D.4.4 Specified conditions. 77
Bibliography . 78

Figure 1 – Graphical symbols. 16
Figure 2 – Circuit for testing the collector-emitter voltages V , V , V . 24
CES CER CEX
Figure 3 – Circuit for testing the reverse voltages V , V . 25
RS RX
Figure 4 – Circuit for testing the gate-emitter voltage ±V . 26
GES
Figure 5 – Circuit for testing collector current . 27
Figure 6 – Circuit for testing peak collector current . 28
Figure 7 – Circuit for testing reverse-conducting current . 28
Figure 8 – Circuit for testing peak reverse-conducting current . 29
Figure 9 – Circuit for testing reverse biased safe operating area (RBSOA) . 30
Figure 10 – Waveforms of gate-emitter voltage V and collector current I during
GE C
turn-off . 31
Figure 11 – Circuit for testing safe operating pulse width at load short-circuit (SCSOA1) . 32
Figure 12 – Waveforms of gate-emitter voltage V , collector current I and collector-
GE C
emitter voltage V during load short-circuit condition SCSOA1 . 32
CE
Figure 13 – Circuit for testing short-circuit safe operating area 2 (SCSOA2) . 33
Figure 14 – Waveforms during SCSOA2 . 34
Figure 15 – Circuit for measuring the collector-emitter saturation voltage V . 35
CEsat
Figure 16 – Circuit for measuring the gate-emitter threshold voltage . 36
Figure 17 – Circuit for measuring the reverse-conducting voltage V . 37
RC
Figure 18 – Circuit for measuring the collector cut-off current . 38
Figure 19 – Circuit for measuring the gate leakage current . 39
Figure 20 – Circuit for measuring the reverse current. 40
Figure 21 – Circuit for measuring the input capacitance . 41
Figure 22 – Circuit for measuring the output capacitance . 42
Figure 23 – Circuit for measuring the reverse transfer capacitance . 43
Figure 24 – Circuit for measuring the gate charge . 44
Figure 25 – Basic gate charge waveform . 44
Figure 26 – Circuit for measuring the internal gate resistance . 45
Figure 27 – Circuit for measuring turn-on times and energy . 46
Figure 28 – Waveforms during turn-on times . 47
Figure 29 – Circuit for measuring turn-off times and energy . 48
Figure 30 – Waveforms during turn-off times . 48
Figure 31 – Circuit for measuring reverse recovery characteristics. 50
Figure 32 – Waveforms during reverse recovery . 50
Figure 33 – Circuit for measuring forward recovery characteristics. 52
Figure 34 – Waveforms during forward recovery . 53
Figure 35 – Circuit for measuring the variation with temperature of the collector-
emitter voltage V at a low measuring current I and for heating up the IGBT by a

CE C1
high current I . 55
C2
Figure 36 – Typical variation of the collector-emitter voltage V at a low measuring
CE
current I with the case temperature T (when heated from outside, i.e. T = T ) . 56
C1 c c vj
Figure 37 – I , V and T with time . 57
C CE c

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– 6 – IEC 60747-9:2019 © IEC 2019
Figure 38 – Circuit for measuring thermal resistance and transient thermal impedance:
Method 2 . 58
Figure 39 – Typical variation of the gate-emitter threshold voltage V at a low
GE(th)
measuring current I with the case temperature T (when heated from the outside, i.e.
C1
c
T = T ) . 59
c vj
Figure 40 – I , V and T with time . 60

C GE c
Figure 41 – Circuit for high-temperature blockings . 62
Figure 42 – Circuit for high-temperature gate bias . 63
Figure 43 – Circuit for intermittent operating life . 64
Figure 44 – Expected number of cycles versus temperature rise ∆T . 64
vj
Figure A.1 – Circuit for measuring the collector-emitter breakdown voltage . 66
Figure B.1 – Circuit for measuring the collector-emitter sustaining voltage V . 68
CE*sus
Figure B.2 – Operating locus of the collector current . 69
Figure C.1 – Circuit for measuring inductive load turn-off current . 71
Figure C.2 – Waveforms of collector current I and collector voltage V during turn-off . 72
C CE
Figure D.1 – Circuit for testing forward biased safe operating area (method 1) . 73
Figure D.2 – Typical ∆V versus collector-emitter voltage V characteristics . 74
CE CE
Figure D.3 – Typical forward biased safe operating area .
...