IEC 62615:2010

Electrostatic discharge sensitivity testing - Transmission line pulse (TLP) - Component level

IEC 62615:2010 defines a method for pulse testing to evaluate the voltage current response of the component under test and to consider protection design parameters for electro-static discharge (ESD) human body model (HBM). This technique is known as transmission line pulse (TLP) testing. This document establishes a methodology for both testing and reporting information associated with transmission line pulse (TLP) testing. The scope and focus of this document pertains to TLP testing techniques of semiconductor components. This document should not become alternative method of HBM test standard such as IEC 60749-26. The purpose of the document is to establish guidelines of TLP methods that allow the extraction of HBM ESD parameters on semiconductor devices. This document provides the standard measurement and procedure for the correct extraction of HBM ESD parameters by using TLP.

Essai de sensibilité aux décharges électrostatiques - Impulsion de ligne de transmission (TLP) - Niveau composant

La CEI 62615:2010 définit une méthode pour procéder aux essais d'impulsions pour évaluer la réponse tension-courant du composant en essai et pour considérer les paramètres de conception de protection pour le modèle du corps humain (HBM) des décharges électrostatiques (DES). Cette technique est connue sous le nom d'essai des impulsions de ligne de transmission (TLP). Le présent document établit une méthodologie à la fois pour effectuer les essais et rapporter les informations sur les essais des impulsions de ligne de transmission (TLP). Le domaine d'application et le centre d'intérêt de ce document portent sur les méthodes d'essai TLP des composants à semiconducteurs. Il convient que le présent document ne devienne pas une méthode alternative à une norme sur les essais HBM telle que la CEI 60749-26. Le but du document est d'établir des directives pour les méthodes TLP qui permettent l'extraction des paramètres du modèle HBM DES sur les dispositifs à semiconducteurs. Le présent document indique les mesures et procédures standards pour extraire correctement les paramètres du modèle HBM DES en utilisant les méthodes TLP.

General Information

• Status: Published
• Publication Date: 30-May-2010
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 17.220.99 - Other standards related to electricity and magnetism
• ICS: 29.060.20 - Cables
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: TC 47 - Semiconductor devices
• Drafting Committee: WG 2 - TC 47/WG 2
• Current Stage: PPUB - Publication issued
• Start Date: 30-Jun-2010
• Completion Date: 31-May-2010

Standards Content (Sample)

IEC 62615 ®
Edition 1.0 2010-05
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Electrostatic discharge sensitivity testing – Transmission line pulse (TLP) –
Component level
Essai de sensibilité aux décharges électrostatiques – Impulsion de ligne de
transmission (TLP) – Niveau composant

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IEC 62615 ®
Edition 1.0 2010-05
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Electrostatic discharge sensitivity testing – Transmission line pulse (TLP) –
Component level
Essai de sensibilité aux décharges électrostatiques – Impulsion de ligne de
transmission (TLP) – Niveau composant

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
R
CODE PRIX
ICS 17.220.99; 31.080 ISBN 978-2-88910-976-0
– 2 – 62615 © IEC:2010
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
ELECTROSTATIC DISCHARGE SENSITIVITY TESTING –
TRANSMISSION LINE PULSE (TLP) –
COMPONENT LEVEL
FOREWORD
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International Standard IEC 62615 has been prepared by IEC technical committee 47:
Semiconductor devices.
This first edition is based on an ANSI/ESDA document ANSI/ESD STM5.5.1-2008.
The text of this standard is based on the following documents:
FDIS Report on voting
47/2046/FDIS 47/2056/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.

62615 © IEC:2010 – 3 –
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
– 4 – 62615 © IEC:2010
INTRODUCTION
Interest in TLP testing is growing rapidly in the testing of electronic components in the
semiconductor industry. TLP testing techniques are being used for semiconductor process
development, device and circuit design. This technique or practice is being utilized on
products in both wafer level and packaged environments. TLP testing is used as an
electrostatic discharge (ESD) characterization tool to obtain voltage-current pulse
characterization parameters, failure levels, and ESD metrics. The TLP technique is being
used today as a standard measurement for ESD devices. The TLP system to the ESD
engineer is becoming a tool as critical as the ‘parameter analyzer’ is to the semiconductor
engineer.
The majority of TLP systems are designed by engineers in a laboratory environment. A
number of commercial TLP systems have been marketed in the industry. Hence it is clear a
TLP specification was needed for the TLP vendors, semiconductor industry and product
customers to be able to make valid data comparisons. With the usage of TLP data for ESD
characterization, technology benchmarking, and product quality evaluation, there is a growing
need to have standard methodologies, failure criteria, and means of reporting to allow
dialogue between semiconductor suppliers, vendors, and product customers.
This document defines the standard test method used today in the semiconductor industry for
TLP testing method and techniques in both industrial and academic institutions (this
document is intended to be used by electrical technicians, electrical engineers, semiconductor
process and device engineers, ESD reliability and quality engineers, and circuit designers).
The context of this document is the application of TLP techniques for the electrical
characterization of semiconductor components. These semiconductor components can be
single devices, a plurality of devices, integrated circuits, or semiconductor chips. This
methodology is relevant to both active and passive elements. This test method is applicable to
diodes, MOSFET devices, bipolar transistors, resistors, capacitors, inductors, contacts, vias,
wire interconnects, and related components.

62615 © IEC:2010 – 5 –
ELECTROSTATIC DISCHARGE SENSITIVITY TESTING –
TRANSMISSION LINE PULSE (TLP) –
COMPONENT LEVEL
1 Scope and object
This International Standard defines a method for pulse testing to evaluate the voltage current
response of the component under test and to consider protection design parameters for
electro-static discharge (ESD) human body model (HBM). This technique is known as
transmission line pulse (TLP) testing.
This document establishes a methodology for both testing and reporting information
associated with transmission line pulse (TLP) testing. The scope and focus of this document
pertains to TLP testing techniques of semiconductor components.
This document should not become alternative method of HBM test standard such as
IEC 60749-26. The purpose of the document is to establish guidelines of TLP methods that
allow the extraction of HBM ESD parameters on semiconductor devices. This document
provides the standard measurement and procedure for the correct extraction of HBM ESD
parameters by using TLP.
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the referenced document (including any amendments) applies.
IEC 60749-26: Semiconductor devices – Mechanical and climatic test methods – Part 26:
Electrostatic discharge (ESD) sensitivity testing – Human body model (HBM)
IEC 60749-27, Semiconductor devices – Mechanical and climatic test methods – Part 27:
Electrostatic discharge (ESD) sensitivity testing – Machine model (MM)
IEC 60749-28, Semiconductor devices – Mechanical and climatic test methods – Part 28:
Electrostatic discharge (ESD) sensitivity testing – Direct contact charged device model (DC-
CDM)
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
3.1
current source method
TLP methodology (sometimes referred to as constant current method) that utilizes a 500 Ω
resistor in series with the DUT and measures the voltage and current at the DUT
3.2
destructive damage
damage where the operating electrical characteristics or parameters are altered and do not
recover to the initial conditions prior to stress
___________
Under consideration.
– 6 – 62615 © IEC:2010
3.3
safe operation area
(SOA)
current and voltage regime where a device is in normal operation without degradation
3.4
second breakdown
condition where a negative resistance state occurs in a device due to thermal processes
NOTE This is designated as the voltage trigger point V and current I . and is typically obs
...