IEC TS 62607-5-3:2020

Nanomanufacturing - Key control characteristics - Part 5-3: Thin-film organic/nano electronic devices – Measurements of charge carrier concentration

IEC TS 62607-5-3:2020 specifies sample structures for evaluating a wide range of charge carrier concentration in organic/nano materials. This specification is provided for both capacitance-voltage (C-V) measurements in metal/insulator/semiconductor stacking structures and Hall-effect measurements with the van der Pauw configuration. Criteria for choosing measurement methods of charge carrier concentration in organic semiconductor layers are also given in this document.

General Information

• Status: Published
• Publication Date: 13-Apr-2020
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 07.030 - Physics. Chemistry
• ICS: 07.120 - Nanotechnologies
• Technical Committee: TC 113 - Nanotechnology for electrotechnical products and systems
• Drafting Committee: PT 62607-5-3 - TC 113/PT 62607-5-3
• Current Stage: PPUB - Publication issued
• Start Date: 14-Apr-2020
• Completion Date: 27-Apr-2020

Overview

IEC TS 62607-5-3:2020 - "Nanomanufacturing – Key control characteristics – Part 5-3: Thin-film organic/nano electronic devices – Measurements of charge carrier concentration" specifies sample structures and measurement guidance for determining charge carrier concentration in organic and nano-scale thin films. The Technical Specification covers two primary measurement approaches: capacitance–voltage (C‑V) testing using metal/insulator/semiconductor (MIS) stacks and Hall‑effect testing using the van der Pauw configuration. It also provides criteria for selecting the appropriate technique and recommends data formats and case studies to support reproducible metrology.

Key topics and technical requirements

• Sample structures
  • Design and fabrication of MIS structures (top- and bottom-contact configurations) suitable for reliable C‑V measurements.
  • Thin-film specimens with van der Pauw geometry, including micro‑scale electrode gaps for high‑resistance organic semiconductors.
• Measurement methods
  • Guidelines for C‑V measurements in organic/nano layers, noting sensitivity to interface contacts, insulator thickness, and hysteresis effects.
  • Use of Hall‑effect measurements with van der Pauw configuration for highly crystalline organic materials; alternatives for low-mobility, high-resistance films.
• Critical criteria
  • Formation of quasi‑ohmic contacts (e.g., contact doping) between electrode and semiconductor for accurate readings.
  • Minimizing insulator thickness in MIS stacks to reduce hysteresis while retaining insulating performance.
  • Consideration of semiconductor thickness, electrode contact conditions, and device architecture when interpreting carrier concentration.
• Supporting content
  • Annex with case studies, stepwise procedures for C‑V and Hall measurements, examples showing influence of layer thickness and contacts.
  • Recommended data formats (tables) for reporting measured carrier concentrations.

Applications and who should use it

IEC TS 62607-5-3 is intended for:

• Materials scientists and researchers characterizing organic semiconductors, nano-electronic thin films, OLED/OTFT materials and doped layers.
• Process and device engineers validating doping levels, contact engineering, and thin‑film fabrication in R&D and pilot production.
• Metrology and test laboratories performing electrical characterization and quality control of thin-film electronic devices.
• Manufacturers seeking standardized, reproducible procedures for reporting charge carrier concentration in nanomanufactured electronic components.

Practical uses include evaluating doping strategies, optimizing contact interfaces, selecting appropriate measurement techniques for a given mobility/resistivity range, and establishing traceable test methods for device development and quality assurance.

Related standards

• Part of the IEC TS 62607 series on Nanomanufacturing – Key control characteristics. Users should consult other parts of the series and IEC resources (Electropedia, IEC webstore) for complementary guidance on terminology and related measurement standards.

Standards Content (Sample)

IEC TS 62607-5-3 ®
Edition 1.0 2020-04
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –
Part 5-3: Thin-film organic/nano electronic devices – Measurements of charge
carrier concentration
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IEC TS 62607-5-3 ®
Edition 1.0 2020-04
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –

Part 5-3: Thin-film organic/nano electronic devices – Measurements of charge

carrier concentration
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 07.030; 07.120 ISBN 978-2-8322-8073-7

– 2 – IEC TS 62607-5-3:2020  IEC 2020
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Sample structures . 6
4.1 Metal/insulator/semiconductor (MIS) structure . 6
4.2 Thin-film specimens with the van der Pauw configuration . 7
5 Criteria for choosing a method for measuring carrier concentration in organic
semiconductor layers . 8
6 Appropriate data formats . 8
Annex A (informative) Case study of carrier concentration measurements of organic
materials . 10
A.1 Procedure of capacitance-voltage (C-V) measurement . 10
A.2 Capacitance-voltage measurement for unoptimized pentacene MIS
structures . 11
A.3 Influences of semiconductor layer thickness and electrode contact
conditions on C-V measurements . 13
A.4 Capacitance-voltage measurement for a pentacene MIS structure with an
ultrathin insulator . 14
A.5 Procedure of Hall-effect measurement . 17
A.6 Hall-effect measurement for organic semiconductor single-crystalline layers . 18
Bibliography . 20

Figure 1 – Typical metal/insulator/semiconductor (MIS) structures . 7
Figure 2 – An organic MIS structure favourable for capacitance-voltage measurements . 7
Figure 3 – Sample structures for Hall-effect measurement with the van der Pauw
configuration . 8
Figure A.1 – Equivalent circuit model for capacitance-voltage measurement with MIS
structure . 10
Figure A.2 – Typical capacitance-voltage curves observed for MIS structures with
organic semiconductor films . 11
Figure A.3 – Capacitance-voltage curves obtained for the MIS structure with 70-nm-
thick-pentacene film . 12
Figure A.5 – Capacitance-voltage curves obtained for a pentacene MIS structure with
an ultrathin SAM-modified AlOx insulator . 16
Figure A.6 – Hall-effect measurement results for rubrene single-crystalline layer doped
with ferric chloride . 19

Table 1 – Possible data format to be given together with carrier concentrations
obtained with capacitance-voltage measurements. 9
Table 2 – Possible data format to be given together with carrier concentrations
obtained with the Hall-effect measurements . 9

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
NANOMANUFACTURING –
KEY CONTROL CHARACTERISTICS –
Part 5-3: Thin-film organic/nano electronic devices –
Measurements of charge carrier concentration

FOREWORD
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Technical Specifications are subject to review within three years of publication to decide
whether they can be transformed into International Standards.
IEC TS 62607-5-3, which is a Technical Specification, has been prepared by IEC technical
committee 113: Nanotechnology for electrotechnical products and systems.

– 4 – IEC TS 62607-5-3:2020  IEC 2020
The text of this Technical Specification is based on the following documents:
Draft TS Report on voting
113/477/DTS 113/523/RVDTS
Full information on the voting for the approval of this Technical Specification can be found in
the report on voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC TS 62607 series, published under the general title
Nanomanufacturing – Key control characteristics, can be found on the IEC website.
The committee has decided that the contents of this publication will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
the specific publication. At this date, the publication will be
• transformed into an International Standard,
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct understanding
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INTRODUCTION
Organic/nano thin-film devices are attracting much attention as promising candidates for light,
low cost, flexible, and printable devices in large-area electronics applications. Recently, charge
carrier doping techniques have been intensely studied and developed, in the same way as the
mature silicon technologies. In organic light-emitting diodes (OLEDs) and organic thin-film
transistors (OTFTs), which are typical organic/nano thin-film devices, carrier doping around
contact electrode regions with molecular donor/acceptor dopants are often utilized to make
ohmic-like contacts for the purpose of increasing electric current in the devices. While the great
importance of carrier doping in organic/nano layers is well recognized, the carrier doping
mechanisms have not been fully understood yet, and the evaluation method of charge carrier
concentration in these materials has not been established.
Conventional representative methods for evaluating charge carrier concentrations (or dopant
concentrations) and the type of charge carrier (electron or hole) in inorganic semiconductor
materials are Hall-effect measurements and capacitance-voltage measurements. For example,
the Hall-effect measurement based on the van der Pauw configuration enables one to get the
above-mentioned physical parameters of the charge carrier in specimens with arbitrary shapes
including thin-film structures. However, this versatile method cannot be utilized for higher
resistance materials such as low-mobility organic semiconductors because of lower currents
and sensitivities in the Hall effect. At the present time, the capacitance-voltage measurement
based on metal/insulator/semiconductor structures is not applicable to highly-doped organic
semiconductors that show some level of metallic behaviour. Therefore, standard methods and
guidelines for measuring charge carrier concentration in organic semiconductor layers need to
be developed.
– 6 – IEC TS 62607-5-3:2020  IEC 2020
NANOMANUFACTURING –
KEY CONTROL CHARACTERISTICS –
Part 5-3: Thin-film organic/nano electronic devices –
Measurements of charge carrier concentration

1 Scope
This part of IEC TS 62607, which is a Technical Specification, specifies sample structures for
evaluating a wide range of charge carrier concentration in organic/nano materials. This
specification is provided for both capacitance-voltage (C-V) measurements in
metal/insulator/semiconductor stacking structures and Hall-effect measurements with the van
der Pauw configuration. Criteria for choosing measurement methods of charge carrier
concentration in organic semiconductor layers are also given in this document.
2 Normative references
There are no normative references in this document.
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
3.1
doping
addition of impurities to a semiconductor to control hole or electron concentrations
Note 1 to entry: For organic semiconductors, not only atomic, but also molecular impurities are utilized.
Note 2 to entry: The added impurities are called "dopants".
3.2
bottom-contact electrode
contact electrode located underneath the semiconductor layer to be tested
3.3
top-contact electrode
contact electrode located on top of the semiconductor layer to be tested
4 Sample structures
4.1 Metal/insulator/semiconductor (MIS) structure
Fabrication of a metal/insulator/semiconductor (MIS) structure as shown in Figure 1 is
necessary for measuring a capacitance-voltage (C-V) curve in organic/nano semiconductor
layers. This structure consists of a series capacitor of the insulator and a depletion region in
the semiconductor layer.
a) Top-contact configuration b) Bottom-contact configuration

Figure 1 – Typical metal/insulator/semiconductor (MIS) structures
However, C-V measurements for MIS structures made of an identical semiconductor material
provide various values of carrier concentration according to the difference in the sample
structures (see Annex A, Clauses A.2, A.3 and A.4). Accordingly, the measurement of the
carrier concentration with C-V measurements largely depends on the extrinsic effects derived
from structure and electronic properties of the semiconductor layer itself and the
metal/semiconductor interface region. Therefore, the following issues shall be considered for
preparing MIS structures for reliable C-V measurements (Figure 2).
1) Quasi-ohmic contacts between the semiconductor layer and the metal electrode shall be
formed. For example, contact doping is one of the practical techniques for this purpose.
2) For suppressing hysteresis phenomena in the measured C-V curves, the insulator in the
MIS structure shall be as thin as possible, while maintaining good insulating properties.

Figure 2 – An organic MIS structure favourable for capacitance-voltage measurements
4.2 Thin-film specimens with the van der Pauw configuration
Thin-film specimens with the van der Pauw configuration as shown in Figure 3 can be
considered for Hall-effect measurement in highly-crystalline organic/nano materials.
Figure 3a) shows the conventional van der Pauw configuration with four point contacts at the
corners of the square film specimens, where the distances between individual contacts are on
a centimetre or millimetre scale. However, this versatile method cannot be applicable to higher
resistance materials such as organic semiconductors because of lower currents and
sensitivities in Hall effect. Therefore, an electrode structure with a micro-scale gap between
diagonally opposite electrodes can be an alternative way for enabling Hall-effect measurement
in an organic semiconductor layer as shown in Figure 3b). In this case, quasi-ohmic contacts
between the semiconductor layer and the metal electrode shall be formed.

– 8 – IEC TS 62607-5-3:2020  IEC 2020

a) Typical sample structure b) Example of a sample structure with top-contact
electrodes
Figure 3 – Sample structures for Hall-effect measurement
with the van der Pauw configuration
5 Criteria for choosing a method for measuring carrier concentration in
organic semiconductor layers
Criteria for choosing a method for measuring carrier concentration in organic semiconductor
layers are proposed as follows. Capacitance-voltage measurements are suitable for organic
thin films with carrier mobilities lower than approximately 1 cm /Vs, while both Hall-effect
measurements with van der Pauw configuration and capacitance-voltage measurements are
considered to be available for organic thin films with carrier mobility higher than approximately
2 2
1 cm /Vs. The mobility of 1 cm /Vs has been regarded as the boundary value between band
like transport region and hopping transport region [1] . The mobility can reach 1 cm /Vs to
10 cm /Vs in highly-crystalline thin films of some high-mobility organic semiconductors.
−5 2 −1 2
However, values in the range of 10 cm /Vs to 10 cm /Vs in a large number of organic
semiconductor thin films are not unusual because the mobility really depends on both the
degree of order in molecular solids and extrinsic factors such as carrier traps and impurities [2].
6 Appropriate data formats
Examples of possible data formats for measurements of charge carrier concentrations in
organic thin-film samples are given in Table 1 and Table 2. Items regarding measurement and
sample conditions and results shall be included in these formats. Additionally, in the case of
the Hall-effect measurements, it is highly recommended to show data plots on time variations
of the measured Hall voltage against the polarity changes of the magnetic field.
____________
Numbers in square brackets refer to the Bibliography

Table 1 – Possible data format to be given together with
carrier concentrations obtained with capacitance-voltage measurements
Item Data
Measurement and Frequency of AC modulation voltage: [   ] Hz
sample conditions
Amplitude of AC modulation voltage: [   ] V
Sweep range of DC bias voltage: [   ] to [   ] V
Measurement atmosphere:
[   ] in a vacuum [  ] in an inert gas
[   ] under ambient condition (relative humidity: [    ] %)
Measurement temperature: [    ] K
Active electrode area of the MIS structure: [    ] cm
Thickness of the active semiconductor: [   ] nm
Dielectric constant of the active semiconductor: [    ]
Measurands Majority carrier type: [  ] P-type  [  ] N-type
-3
Carrier concentration: [   ] ± [   ] cm
Capacitance of insulator in the MIS structure: [   ] ± [   ] nF/cm
Hysteresis with DC bias sweep:
[   ] No hysteresis
[   ] With hysteresis (Hysteresis width: [   ] V)

Table 2 – Possible data format to be given together with
carrier concentrations obtained with the Hall-effect measurements
Item Data
Measurement and Kind of magnetic field: [   ] DC magnetic field  [   ] AC magnetic field
sample conditions
Amplitude of magnetic field: [    ] T
Frequency of magnetic field: [   ] Hz (in the case of AC magnetic field)
Amplitude of DC current: [   ] A
Measurement atmosphere:
[   ] in a vacuum [  ] in an inert gas
[   ] under ambient condition (relative humidity: [    ] %)
Measurement temperature: [    ] K
Thickness of the active semiconductor: [   ] nm
Measurands Majority carrier type: [   ] P-type  [  ] N-type
-3
Carrier concentration: [   ] ± [   ] cm
Carrier mobility: [   ] ± [   ] cm /Vs
Hall resistance: [   ] ± [   ] Ω
Electrical resistivity: [   ] ± [   ] Ωcm

– 10 – IEC TS 62607-5-3:2020  IEC 2020
Annex A
(informative)
Case study of carrier concentration measurements of organic materials
A.1 Procedure of capacitance-v
...