IEC TS 62607-5-3:2020
(Main)Nanomanufacturing - Key control characteristics - Part 5-3: Thin-film organic/nano electronic devices – Measurements of charge carrier concentration
Nanomanufacturing - Key control characteristics - Part 5-3: Thin-film organic/nano electronic devices – Measurements of charge carrier concentration
IEC TS 62607-5-3:2020 specifies sample structures for evaluating a wide range of charge carrier concentration in organic/nano materials. This specification is provided for both capacitance-voltage (C-V) measurements in metal/insulator/semiconductor stacking structures and Hall-effect measurements with the van der Pauw configuration. Criteria for choosing measurement methods of charge carrier concentration in organic semiconductor layers are also given in this document.
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IEC TS 62607-5-3 ®
Edition 1.0 2020-04
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –
Part 5-3: Thin-film organic/nano electronic devices – Measurements of charge
carrier concentration
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IEC TS 62607-5-3 ®
Edition 1.0 2020-04
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –
Part 5-3: Thin-film organic/nano electronic devices – Measurements of charge
carrier concentration
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 07.030; 07.120 ISBN 978-2-8322-8073-7
– 2 – IEC TS 62607-5-3:2020 IEC 2020
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Sample structures . 6
4.1 Metal/insulator/semiconductor (MIS) structure . 6
4.2 Thin-film specimens with the van der Pauw configuration . 7
5 Criteria for choosing a method for measuring carrier concentration in organic
semiconductor layers . 8
6 Appropriate data formats . 8
Annex A (informative) Case study of carrier concentration measurements of organic
materials . 10
A.1 Procedure of capacitance-voltage (C-V) measurement . 10
A.2 Capacitance-voltage measurement for unoptimized pentacene MIS
structures . 11
A.3 Influences of semiconductor layer thickness and electrode contact
conditions on C-V measurements . 13
A.4 Capacitance-voltage measurement for a pentacene MIS structure with an
ultrathin insulator . 14
A.5 Procedure of Hall-effect measurement . 17
A.6 Hall-effect measurement for organic semiconductor single-crystalline layers . 18
Bibliography . 20
Figure 1 – Typical metal/insulator/semiconductor (MIS) structures . 7
Figure 2 – An organic MIS structure favourable for capacitance-voltage measurements . 7
Figure 3 – Sample structures for Hall-effect measurement with the van der Pauw
configuration . 8
Figure A.1 – Equivalent circuit model for capacitance-voltage measurement with MIS
structure . 10
Figure A.2 – Typical capacitance-voltage curves observed for MIS structures with
organic semiconductor films . 11
Figure A.3 – Capacitance-voltage curves obtained for the MIS structure with 70-nm-
thick-pentacene film . 12
Figure A.5 – Capacitance-voltage curves obtained for a pentacene MIS structure with
an ultrathin SAM-modified AlOx insulator . 16
Figure A.6 – Hall-effect measurement results for rubrene single-crystalline layer doped
with ferric chloride . 19
Table 1 – Possible data format to be given together with carrier concentrations
obtained with capacitance-voltage measurements. 9
Table 2 – Possible data format to be given together with carrier concentrations
obtained with the Hall-effect measurements . 9
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
NANOMANUFACTURING –
KEY CONTROL CHARACTERISTICS –
Part 5-3: Thin-film organic/nano electronic devices –
Measurements of charge carrier concentration
FOREWORD
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Technical Specifications are subject to review within three years of publication to decide
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IEC TS 62607-5-3, which is a Technical Specification, has been prepared by IEC technical
committee 113: Nanotechnology for electrotechnical products and systems.
– 4 – IEC TS 62607-5-3:2020 IEC 2020
The text of this Technical Specification is based on the following documents:
Draft TS Report on voting
113/477/DTS 113/523/RVDTS
Full information on the voting for the approval of this Technical Specification can be found in
the report on voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC TS 62607 series, published under the general title
Nanomanufacturing – Key control characteristics, can be found on the IEC website.
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INTRODUCTION
Organic/nano thin-film devices are attracting much attention as promising candidates for light,
low cost, flexible, and printable devices in large-area electronics applications. Recently, charge
carrier doping techniques have been intensely studied and developed, in the same way as the
mature silicon technologies. In organic light-emitting diodes (OLEDs) and organic thin-film
transistors (OTFTs), which are typical organic/nano thin-film devices, carrier doping around
contact electrode regions with molecular donor/acceptor dopants are often utilized to make
ohmic-like contacts for the purpose of increasing electric current in the devices. While the great
importance of carrier doping in organic/nano layers is well recognized, the carrier doping
mechanisms have not been fully understood yet, and the evaluation method of charge carrier
concentration in these materials has not been established.
Conventional representative methods for evaluating charge carrier concentrations (or dopant
concentrations) and the type of charge carrier (electron or hole) in inorganic semiconductor
materials are Hall-effect measurements and capacitance-voltage measurements. For exa
...
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