Nanomanufacturing - Key control characteristics - Part 5-4: Energy band gap measurement of nanomaterials by electron energy loss spectroscopy (EELS)

IEC TS 62607-5-4:2022 specifies the measuring method of the band gap energy of a nanomaterial using electron energy loss data of transmission electron microscope.
The method specified in this document is applicable to semiconducting and insulating nanomaterials to estimate the band gap.
The measurement to get reliable data is performed under the consistent conditions of TEM observation and specimen thickness. The applicable measurement range of band gap energy is more than 2 eV.

General Information

Status
Published
Publication Date
06-Dec-2022
Current Stage
PPUB - Publication issued
Start Date
12-Jan-2023
Completion Date
07-Dec-2022
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IEC TS 62607-5-4:2022 - Nanomanufacturing - Key control characteristics - Part 5-4: Energy band gap measurement of nanomaterials by electron energy loss spectroscopy (EELS) Released:12/7/2022
English language
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IEC TS 62607-5-4
®

Edition 1.0 2022-12
TECHNICAL
SPECIFICATION

colour
inside


Nanomanufacturing – Key control characteristics –
Part 5-4: Energy band gap measurement of nanomaterials by electron energy
loss spectroscopy (EELS)
IEC TS 62607-5-4:2022-12(en)

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IEC TS 62607-5-4

®


Edition 1.0 2022-12




TECHNICAL



SPECIFICATION








colour

inside










Nanomanufacturing – Key control characteristics –

Part 5-4: Energy band gap measurement of nanomaterials by electron energy

loss spectroscopy (EELS)

























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ICS 07.030; 07.120 ISBN 978-2-8322-6199-6




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– 2 – IEC TS 62607-5-4:2022 © IEC 2022
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Abbreviated terms . 9
5 Environmental conditions . 9
6 Test sample . 9
6.1 General . 9
6.2 Size of test sample . 9
7 Testing method and test apparatus . 9
7.1 General . 9
7.2 Detector . 10
7.3 Test procedure . 11
7.3.1 Transmission electron microscope alignment . 11
7.3.2 Scanning transmission electron microscope alignment . 11
7.4 Measurement . 11
8 Data analysis . 12
8.1 Band gap determination . 12
8.2 Report of the results . 13
Annex A (informative) Band gap measurement of WO thin film on PET . 15
3
Annex B (informative) Band gap measurement of SiN thin-film multilayers . 17
x
Bibliography . 18

Figure 1 – Definition of band gap energy . 7
Figure 2 – Schematic showing TEM and EELS system . 10
Figure 3 – Apparatus for the measurement of band gap energy by using electron
energy loss spectroscopy . 11
Figure 4 – Setting for spectrum imaging . 12
Figure 5 – Normalized spectrum of log scale . 13
Figure 6 – Band gap measurement method using linear fitting . 13
Figure A.1 – Measurement of band gap of WO by STEM-EELS . 15
3
Figure B.1 – Band gap measurement result of multilayer thin films. 17

Table A.1 – Example of a report for the sample in Figure A.1 . 16
Table B.1 – Band gap data of SiN . 17
x

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IEC TS 62607-5-4:2022 © IEC 2022 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________

NANOMANUFACTURING – KEY CONTROL CHARACTERISTICS –

Part 5-4: Energy band gap measurement of nanomaterials
by electron energy loss spectroscopy (EELS)

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent
rights. IEC shall not be held responsible for identifying any or all such patent rights.
IEC TS 62607-5-4 has been prepared by IEC technical committee 113: Nanotechnology for
electrotechnical products and systems. It is a Technical Specification.
The text of this Technical Specification is based on the following documents:
Draft Report on voting
113/513/DTS 113/594/RVDTS

Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this Technical Specification is English.

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– 4 – IEC TS 62607-5-4:2022 © IEC 2022
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/publications.
A list of all parts in the IEC TS 62607 series, published under the general title
Nanomanufacturing – Key control characteristics, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.

IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct understanding
of its contents. Users should therefore print this document using a colour printer.

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IEC TS 62607-5-4:2022 © IEC 2022 – 5 –
INTRODUCTION
Electronic and electrical devices developed up to now have been fabricated by stacking a series
of active and/or passive layers on a specific substrate. The current trend in developing such
devices is the miniaturization of product size, whereas the basic structure of multilayers on a
substrate has not changed. Accordingly geometrical scales in the inner structure of a device
have been decreasing and some of the scales such as thickness of the layers have finally
reached a few nanometres. One of the key control characteristics (KCCs) is the band gap of an
active layer which enables the electron or hole transportation, excitation and emission of
electrons, etc. to be controlled.
The band gap is referred to as an energy gap, which means a difference between an energy
level in which electrons exist and an energy level in which electrons do not exist. Even though
the band gap of a material is intrinsic, the band gap of a nanomaterial is an extrinsic property
which represents its size-dependency. Therefore, the band gap of nanoscale materials needs
to be measured locally, in situ or in vitro.
For the band gap measurement application to nanomaterials, a specific region of a nanometre-
scale device or a single layer of the multi-layered structure, a transmission electron microscope
(TEM), which has atomic-scale image resolution, and electron energy loss spectroscopy (EELS),
which can measure energy loss of electrons, have in general been used.
In this document, a method of measuring the band gap energy at a specific location for a
nanomaterial by using TEM and EELS is proposed.

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– 6 – IEC TS 62607-5-4:2022 © IEC 2022
NANOMANUFACTURING – KEY CONTROL CHARACTERISTICS –

Part 5-4: Energy band gap measurement of nanomaterials
by electron energy loss spectroscopy (EELS)



1 Scope
This part of IEC TS 62607 specifies the measuring method of the band gap energy of a
nanomaterial using electron energy loss data of transmission electron microscope.
The method specified in this document is applicable to semiconducting and insulating
nanomaterials to estimate the band gap.
The measurement to get reliable data is performed under the consistent conditions of TEM
observation and specimen thickness. The applicable measurement range of band gap energy
is more than 2 eV.
2 Normative references
There are no normative references in this document.
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the
...

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