IEC 60747-5-4:2022

Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers

IEC 60747-5-4:2022(E) specifies the terminology, the essential ratings and characteristics as well as the measuring methods of semiconductor lasers.
This edition includes the following significant technical changes with respect to the previous edition:  
References for the terms and definitions related to the lighting area, IEC 60050-845, are revised based on IEC 60050-845:2020;
Emission angle is changed to radiation angle in 3.3.2;
Definitions of rise time and fall time in 3.4.1 are revised based on the publication IEC 60050-521:2002;
Spectral linewidth is added to Table 1 in Clause 4;
Conditions for carrier-to-noise ratio of Table 1 in Clause 4 is amended.
Error in the equation for carrier-to-noise ratio in 5.2.2 is corrected;
Precaution against the equipment used for carrier-to-noise ratio measurement is added in 5.2.2;
Explanation for the measurement method of the small signal cut-off frequency in 5.3.2 of the first edition is deleted because it has been defined in the latest version of ISO 11554;
Reference document for the lifetime in 5.4 is amended;
Precaution against the measuring arrangement used for the half-intensity width and 1/e2-intensity is added in 5.5.3;
Reference tables in Annex A, Annex B and Annex C are revised by following the latest version of ISO publications.

General Information

• Status: Published
• Publication Date: 26-Apr-2022
• ICS: 31.080.01 - Semiconductor devices in general
• ICS: 31.260 - Optoelectronics. Laser equipment
• Technical Committee: SC 47E - Discrete semiconductor devices
• Drafting Committee: WG 9 - TC 47/SC 47E/WG 9
• Current Stage: PPUB - Publication issued
• Start Date: 20-May-2022
• Completion Date: 27-Apr-2022

Relations

• Revises: IEC 60747-5-4:2006 - Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
• Effective Date: 05-Sep-2023

Standards Content (Sample)

IEC 60747-5-4
®

Edition 2.0 2022-04
INTERNATIONAL
STANDARD



Semiconductor devices –
Part 5-4: Optoelectronic devices – Semiconductor lasers
IEC 60747-5-4:2022-04(en)

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IEC 60747-5-4

®


Edition 2.0 2022-04




INTERNATIONAL



STANDARD



















Semiconductor devices –

Part 5-4: Optoelectronic devices – Semiconductor lasers


























INTERNATIONAL

ELECTROTECHNICAL


COMMISSION





ICS 31.080.01; 31.260 ISBN 978-2-8322-1100-7




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CONTENTS
FOREWORD . 4
INTRODUCTION . 6
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 7
3.1 Physical concepts . 8
3.2 Types of devices . 9
3.3 General terms . 9
3.4 Terms related to ratings and characteristics . 10
3.4.1 Switching times . 10
3.4.2 Output and current characteristics . 12
3.5 Spatial profiles and spectral characteristics . 15
4 Essential rating and characteristics . 15
4.1 Type . 15
4.2 Semiconductor . 15
4.2.1 Material . 15
4.2.2 Structure . 15
4.3 Details of outline drawing and encapsulation. 16
4.4 Limiting values (absolute maximum ratings over the operating temperature
range, unless otherwise stated) . 16
4.5 Electrical and optical characteristics . 16
4.6 Supplementary information . 18
5 Measurement methods . 18
5.1 Power measurement . 18
5.2 Output stability . 18
5.2.1 Relative intensity noise . 18
5.2.2 Carrier-to-noise ratio . 18
5.2.3 Output power stability . 20
5.2.4 Output energy stability . 20
5.2.5 Temporal pulse shape . 20
5.3 Time domain profile . 20
5.3.1 Switching times . 20
5.3.2 Small signal cut-off frequency (f ) . 22
c
5.4 Lifetime . 22
5.5 Optical characteristics of the laser beam . 23
5.5.1 Polarization . 23
2
5.5.2 Half-intensity angle θ and 1/e -intensity angle θ 2 . 23
1/2 1/e
2
5.5.3 Half-intensity width D and 1/e -intensity width D 2 . 25
1/2 1/e
5.5.4 Spectral characteristics and other spatial profile . 26
Annex A (informative) Reference list of technical terms and definitions related to
spatial profile and spectral characteristics . 27
Annex B (informative) Reference list of measurement methods related to spatial
profile and spectral characteristics . 31
Annex C (informative) Reference list of technical terms and definitions, and
measurement methods, related to power measurement and lifetime . 32
Bibliography . 33

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IEC 60747-5-4:2022 © IEC 2022 – 3 –
Figure 1 – Example of the device with window but without lens . 10
Figure 2 – Switching times . 12
Figure 3 – Threshold current of a laser diode . 14
Figure 4 – Basic circuit diagram . 19
Figure 5 – Basic circuits diagram . 21
Figure 6 – Typical pulse response diagram . 22
Figure 7 – Half-intensity angle . 23
Figure 8 – Relationship between the specified plane and the mechanical reference
plane . 23
Figure 9 – Basic measurement setup diagram . 24
Figure 10 – Measuring arrangement for D and D 2 . 25
1/2 1/e

Table 1 – Electrical and optical characteristics . 17

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INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________

SEMICONDUCTOR DEVICES –

Part 5-4: Optoelectronic devices –
Semiconductor lasers

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and
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preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with
may participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for
Standardization (ISO) in accordance with conditions determined by agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent
rights. IEC shall not be held responsible for identifying any or all such patent rights.
IEC 60747-5-4 has been prepared by subcommittee 47E: Discrete semiconductor devices, of
IEC technical committee 47: Semiconductor devices. It is an International Standard.
This second edition cancels and replaces the first edition published in 2006. This edition
constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous
edition:
a) References for the terms and definitions related to the lighting area, IEC 60050-845, are
revised based on IEC 60050-845:2020;
b) Emission angle is changed to radiation angle in 3.3.2;
c) Definitions of rise time and fall time in 3.4.1 are revised based on the publication IEC 60050-
521:2002;
d) Spectral linewidth is added to Table 1 in Clause 4;
e) Conditions for carrier-to-noise ratio of Table 1 in Clause 4 is amended.

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IEC 60747-5-4:2022 © IEC 2022 – 5 –
f) Error in the equation for carrier-to-noise ratio in 5.2.2 is corrected;
g) Precaution against the equipment used for carrier-to-noise ratio measurement is added in
5.2.2;
h) Explanation for the measurement method of the small signal cut-off frequency in 5.3.2 of
the first edition is deleted because it has been defined in the latest version of ISO 11554;
i) Reference document for the lifetime in 5.4 is amended;
2
j) Precaution against the measuring arrangement used for the half-intensity width and 1/e -
intensity is added in 5.5.3;
k) Reference tables in Annex A, Annex B and Annex C are revised by following the latest
version of ISO publications.
The text of this International Standard is based on the following documents:
Draft Report on voting
47E/783/FDIS 47E/785/RVD

Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/standardsdev/publications.
A list of all parts in the IEC 60747 series, published under the general title Semiconductor
devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.

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INTRODUCTION
The first edition of this part of IEC 60747 was published in 2006 under close collaboration
between IEC TC 47 SC 47E (IEC TC 47 SC 47C at that moment) and ISO TC 172 SC 9. The
scope of IEC/TC47/SC47E includes laser diodes as one of the discrete semiconductor devices
while that of ISO/TC172/SC9 includes laser diodes as one of the laser and laser-related
equipment. Consequently, technical contents in this publication extend over IEC and ISO.
In order to harmonize the IEC and ISO laser-related standards in 1997, a joint working group
(JWG) consisted of the experts from both IEC SC 47E and ISO TC 172 SC 9 was established.
As a result of discussion, items based on the electrical and electronic technologies are dealt
with by subcommittee 47E of IEC technical committee 47, while optical characteristics of the
output beam are under the responsibility of subcommittee 9 of ISO technical committee 172.
This was agreed, after long discussion, in 2002 between subcommittee 47E of IEC technical
committee 47 and subcommittee 9 of ISO technical committee 172. Based on this agreement,
terms and definitions, and test and measurement methods for the optical beam parameters in
this part of IEC 60747-5-4 are referenced to the ISO standards that specify the topics.
The joint working group was disbanded in 2017. However, close co-operation and contact
between two groups is indispensable in order to avoid any conflicts and to keep harmonization
of IEC and ISO laser standards.
This second edition of IEC 60747-5-4 has been updated by following the revision and
amendments in the latest versions of laser standards of both IEC and ISO.

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IEC 60747-5-4:2022 © IEC 2022 – 7 –
SEMICONDUCTOR DEVICES –

Part 5-4: Optoelectronic devices –
Semiconductor lasers



1 Scope
This part of IEC 60747 specifies the terminology, the essential ratings and characteristics as
well as the measuring methods of semiconductor lasers.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies.
For undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC TR 62572-2, Fibre optic active components and devices – Reliability standards – Part 2:
Laser module degradation
ISO 11146-1, Lasers and laser-related equipment – Test methods for laser beam widths,
divergence angles and beam propagation ratios – Part 1: Stigmatic and simple astigmatic
beams
ISO 11554, Optics and photonics – Lasers and laser-related equipment – Test methods for laser
beam power, energy and temporal characteristics
ISO 12005, Lasers and laser-related equipment – Test methods for laser beam parameters –
Polarization
ISO 17526, Optics and optical instruments – Lasers and laser-related equipment – Lifetime of
lasers
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp

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3.1 Physical concepts
3.1.1
electromagnetic radiation,
phenomenon by which energy in the form of electromagnetic waves or photons emanates from
a source and is transferred through space
Note 1 to entry: The term “electromagnetic radiation” is also used for the electromagnetic waves or photons
produced (see IEV 705-02-01).
Note 2 to entry: The physical concepts of photons and electromagnetic waves are used to describe the same
phenomenon of transmission of radiant energy in different ways, depending on the nature of the interaction of the
energy with the physical world (wave-particle dualism).
[SOURCE: IEC 60050-702:1992/AMD5:2019, 702-02-07]
3.1.2
electromagnetic radiation,
energy that emanates from a source in the form of electromagnetic waves or photons and is
transferred through space
Note 1 to entry: The term “electromagnetic radiation” is also used for the phenomenon producing the
electromagnetic waves or photons (see IEV 702-02-07).
Note 2 to entry: The physical concepts of photons and electromagnetic waves are used to describe the same
phenomenon of transmission of radiant energy in different ways, depending on the nature of the interaction of the
energy with the physical world (wave-particle dualism).
[SOURCE: IEC 60050-705:1995/AMD4:2019, 705-02-01]
3.1.3
optical radiation
electromagnetic radiation at wavelengths between the region of transition to X-rays (λ ≈ 1 nm)
and the region of transition to radio waves (λ ≈ 1 mm)
Note 1 to entry: This entry was numbered 845-01-02 in IEC 60050-845:1987.
[SOURCE: IEC 60050-845:2020, 845-21-002]
3.1.4
light, noun
radiation that is considered from the point of view of its ability to excite the visual system
Note 1 to entry: The term "light" is sometimes used for optical radiation extending outside the visible range, but this
usage is not recommended.
Note 2 to entry: This entry was numbered 845-01-06 in IEC 60050-845:1987.
[SOURCE: IEC 60050-845:2020, 845-21-012]
3.1.5
light, noun
radiation within the spectral range of visible radiation
Note 1 to entry: Sometimes, the term "light" is also used in physics as a synonym of optical radiation, covering the
spectral range from 100 nm to 1 mm and sometimes even covering the X-ray spectral range. This misuse of the term
‘'light'' should be avoided.
[SOURCE: IEC 60050-845:2020, 845-21-013]

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IEC 60747-5-4:2022 © IEC 2022 – 9 –
3.1.6
visible radiation
optical radiation (IEV 845-21-002) capable of causing a visual sensation directly
Note 1 to entry: There are no precise limits for the spectral range of visible radiation since they depend upon the
amount of radiant flux reaching the retina and the responsivity of the observer. The lower limit is generally taken
between 360 nm and 400 nm and the upper limit between 760 nm and 830 nm.
Note 2 to entry: This entry was numbered 845-01-03 in IEC 60050-845:1987.
Note 3 to entry: ISO 20473:2007 Optics and photonics – Spectral bands defines from 380 nm to 780 nm for the
range of visible radiation.
[SOURCE: IEC 60050-845:2020, 845-021-003, modified – Note 3 has been added.]
3.2 Types of devices
3.2.1
semiconductor laser
laser diode
semiconductor diode that emits coherent optical radiation through stimulated emission resulting
from the recombination of conduction electrons and holes when excited by an electric current
that exceeds the threshold current of the diode
Note 1 to entry: The laser diode is mounted on a submount or in a package with or without coupling means
(e.g. lens, fibre pigtail).
[SOURCE: IEC 60050-521:2002, 521-04-37, modified – The term "laser diode" has been
replaced by "semiconductor laser".]
3.3 General terms
3.3.1
beam axis
straight line connecting the centroids defined by the first spatial moments of the cross-sectional
power (energy) density distribution function at successive locations in the direction of
propagation (z) of the beam in a homogeneous medium
[SOURCE: ISO 11145:2018, 3.2.1]
3.3.2
optical port
geometrical configuration, referenced to an external plane or surface of the device, that is used
to specify the optical radiation emitted from an emitting device
EXAMPLE
Signification of annotations in the Figure 1:
= acceptance angle or radiation angle
α

= optical port with diameter D
D

Ref. = reference locus for the definition of the optical port

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Figure 1 – Example of the device with window but without lens
Note 1 to entry: The geometrical configuration should be specified by the manufacturer by means of geometrical
information, e.g:
– location, shape and size of the area of emission;
– angle of emission or acceptance;
– other parameters, e.g. numerical aperture of optical fibre;
– orientation of beam axis.
3.4 Terms related to ratings and characteristics
3.4.1 Switching times
Relation between the electrical input signal and the optical output signal is shown in Figure 2
with the indication of switching times.
3.4.1.1
rise time
t
r
time interval between the instants at which the magnitude of the pulse at the output terminals
reaches specified lower and upper limits respectively when the semiconductor device is being
switched from its non-conducting to its conducting state
Note 1 to entry: The lower and upper limits are usually 10 % and 90 % respectively of the final amplitude of the
output pulse.
[SOURCE: IEC 60050-521:2002, 521-05-22]
3.4.1.2
fall time
t
f
time interval between the instants at which the magnitude of the pulse at the output terminals
reaches specified upper and lower limits respectively when a semiconductor device is being
switched from its conducting to its non-conducting state
Note 1 to entry: The upper and lower limits are usually 90 % and 10 % respectively of the initial amplitude of the
output pulse.
[SOURCE: IEC 60050-521:2002, 521-05-24]

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IEC 60747-5-4:2022 © IEC 2022 – 11 –
3.4.1.3
turn-on delay time
t
d(on)
time interval between the instant the electrical input signal reaches a specified level (10 %
unless otherwise stated) and the instant the optical output signal reaches a specifies level
(10 % of the steady-state maximum unless otherwise stated)
3.4.1.4
turn-on time
t
on
time interval between the instant the electrical input signal reaches a specified level (10 %
unless otherwise stated) and the instant the optical output signal reaches a specified level (90 %
of the steady-state maximum unless otherwise stated)
t = t + t
on d(on) r
3.4.1.5
turn-off delay time
t
d(off)
time interval between the instant the electrical input signal downs a specified level (90 % unless
otherwise stated) and the instant the optical output signal downs a specifies level (90 % of the
steady-state maximum unless otherwise stated)
3.4.1.6
turn-off time
t
off
time interval between the instant the electrical input signal downs a specified level (90 % unless
otherwise stated) and the instant the optical output signal downs a specified level (10 % of the
steady-state maximum unless otherwise stated).
t = t + t
off d(off) f

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Figure 2 – Switching times
NOTE Lower and upper specified values indicate 10 % and 90 %, respectively, unless otherwise stated.
3.4.2 Output and current characteristics
3.4.2.1
output power,
P
radiant power transferred from the semiconductor laser through the optical port
[SOURCE: ISO 11145:2018, 3.18, modified – The symbol “R(f)“has been replaced by “RIN”. ]
3.4.2.2
radiant flux
radiant power
Φ
e
change in radiant energy with time
dQ
e
Φ =
e
dt
where Q is the radiant energy emitted, transferred or received, and t is time
e
Note 1 to entry: The corresponding photometric quantity is "luminous flux". The corresponding quantity for photons
is "photon flux".
Note 2 to entry: The term "radiant flux" is the preferred term for most radiometric applications, with the notable
exception of laser radiometry where the term "radiant power" is more commonly used.
Note 3 to entry: The radiant flux is expressed in watt (W).

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IEC 60747-5-4:2022 © IEC 2022 – 13 –
Note 4 to entry: This entry was numbered 845-01-24 in IEC 60050-845:1987.
[SOURCE: IEC 60050-845:2020, 845-21-038]
3.4.2.3
differential output power efficiency
η
d
output power efficiency for small-signal modulation:
η = dP/dI
d F
Note 1 to entry: Dimension of η is W/A.
d
Note 2 to entry: The term "small-signal modulation efficacy" is used as a synonym.
Note 3 to entry: Differential output power quantum efficiency = q/(hν). η is also applicable,
d
where
q is the electron charge,
ν is the optical frequency,
h is equal to 6,626 070 15 × 10-34 Js (Planck’s constant).
3.4.2.4
threshold current,
I
TH
forward current derived from one of the following two methods:
a) derivative threshold current I
TH(D)
forward current at which the second derivative of the curve showing output power P versus
forward current I has its first maximum [see Figure 3 a)];
F
b) extrapolated threshold current
forward current at which the extrapolated two straight lines of the stimulated emission and the
spontaneous emission cross each other [see Figure 3 b)].

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a) Derivative threshold current of a laser diode

b) Extrapolated threshold current of a laser diode
Figure 3 – Threshold current of a laser diode
3.4.3 Noise characteristics (of a semiconductor laser)
3.4.3.1
relative intensity noise
...