IEC 60747-5-16:2023

Semiconductor devices - Part 5-16: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy

IEC 60747-5-16:2023 specifies the measuring method of flat-band voltage of single GaN-based light emitting diode (LED) die or package without phosphor, based on the photocurrent (PC) spectroscopy. White LEDs for lighting applications are out of the scope of this part of IEC 60747.

General Information

• Status: Published
• Publication Date: 27-Mar-2023
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: SC 47E - Discrete semiconductor devices
• Drafting Committee: WG 9 - TC 47/SC 47E/WG 9
• Current Stage: PPUB - Publication issued
• Start Date: 25-Apr-2023
• Completion Date: 28-Mar-2023

Standards Content (Sample)

IEC 60747-5-16 ®
Edition 1.0 2023-03
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices –
Part 5-16: Optoelectronic devices – Light emitting diodes – Test method of the
flat-band voltage of GaN-based light emitting diodes based on the photocurrent
spectroscopy
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IEC 60747-5-16 ®
Edition 1.0 2023-03
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices –
Part 5-16: Optoelectronic devices – Light emitting diodes – Test method of the

flat-band voltage of GaN-based light emitting diodes based on the photocurrent

spectroscopy
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99 ISBN 978-2-8322-6677-9

– 2 – IEC 60747-5-16:2023 © IEC 2023
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms, definitions and abbreviated terms . 5
3.1 Terms and definitions . 5
3.2 Abbreviated terms . 6
4 Measuring methods . 6
4.1 Basic requirements . 6
4.1.1 Measuring conditions . 6
4.1.2 Measuring instruments and equipment . 7
4.2 Purpose . 7
4.3 Measurement . 7
4.3.1 Measurement setup . 7
4.3.2 Measurement principle. 8
4.3.3 Measurement sequence . 9
5 Test report . 11
Annex A (informative) Test example. 12
Annex B (informative) Comparison of PC and ER spectroscopies . 15
Bibliography . 17

Figure 1 – Schematic diagram of the PC spectroscopy setup . 7
Figure 2 – Schematic illustration of the InGaN/GaN quantum well and the PC signal
under different bias voltages . 8
Figure 3 – Schematic illustration of how the differential PC signal behaves as the bias
voltage is decreased . 9
Figure 4 – Schematic illustration of the peak slope as a function of bias voltage . 9
Figure 5 – Sequence of the measurement of the flat-band voltage using the PC
spectroscopy . 10
Figure A.1 – Spectral radiant flux of the Xe lamp . 12
Figure A.2 – PC signal vs. wavelength at different bias voltages . 13
Figure A.3 – Differential PC signal vs. wavelength at different bias voltages . 13
Figure A.4 – Peak slope as a function of reverse-bias voltage . 14
Figure B.1 – ER signal vs. wavelength at different bias voltages . 16
Figure B.2 – Determination of the flat-band voltage from the peak values of the ER
signals . 16

Table A.1 – Summary of test report . 14

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
Part 5-16: Optoelectronic devices – Light emitting diodes –
Test method of the flat-band voltage of GaN-based light emitting
diodes based on the photocurrent spectroscopy

FOREWORD
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IEC 60747-5-16 has been prepared by subcommittee 47E: Discrete semiconductor devices, of
IEC technical committee 47: Semiconductor devices. It is an International Standard.
The text of this International Standard is based on the following documents:
Draft Report on voting
47E/788/CDV 47E/797/RVC
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.

– 4 – IEC 60747-5-16:2023 © IEC 2023
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
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described in greater detail at www.iec.ch/publications.
A list of all parts in the IEC 60747 series, published under the general title Semiconductor
devices, can be found on the IEC website.
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• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
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SEMICONDUCTOR DEVICES –
Part 5-16: Optoelectronic devices – Light emitting diodes –
Test method of the flat-band voltage of GaN-based light emitting
diodes based on the photocurrent spectroscopy

1 Scope
This part of IEC 60747 specifies the measuring method of flat-band voltage of single GaN-
based light emitting diode (LED) die or package without phosphor, based on the photocurrent
(PC) spectroscopy. White LEDs for lighting applications are out of the scope of this part of
IEC 60747.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies.
For undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC 60747‑5‑6:2021, Semiconductor devices – Part 5-6: Optoelectronic devices – Light emitting
diodes
IEC 60747-5-15:2022, Semiconductor devices – Part 5-15: Optoelectronic devices – Light
emitting diodes – Test method of the flat-band voltage based on the electroreflectance
spectroscopy
3 Terms, definitions and abbreviated terms
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminology databases for use in standardization at the following
addresses:
• IEC Electropedia: available at https://www.electropedia.org/
• ISO Online browsing platform: available at https://www.iso.org/obp
3.1 Terms and definitions
3.1.1
spectral radiant flux
Φλ()
e,λ
radiant flux per unit wavelength interval at a given wavelength (λ)
Note 1 to entry: Spectral radiant flux is typically denoted by Φ , which is equivalent to dΦdλ, and is usually
λ
expressed in units of watts per nm.
[SOURCE: IEC 62607-3-1:2014 [1] , 3.20, modified – A symbol has been added.]

Numbers in square brackets refer to the Bibliography.

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