IEC 63275-2:2022

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

Dispositifs à semiconducteurs - Méthode d’essai de fiabilité pour les transistors à effet de champ métal-oxyde-semiconducteurs discrets en carbure de silicium - Partie 2: Méthode d’essai de la dégradation bipolaire due au fonctionnement de la diode intrinsèque

L’IEC 63275-2:2022 donne la méthode d’essai et une procédure utilisant cette méthode pour évaluer la dérive de la tension à l’état passant, la dérive de la résistance à l’état passant et la variation de tension de drain inverse des dispositifs MOSFET de puissance en carbure de silicium (SiC) en raison du fonctionnement de la diode intrinsèque. Cet essai n’est généralement pas demandé pour les transistors de puissance en Si.

General Information

• Status: Published
• Publication Date: 10-May-2022
• ICS: 31.080.30 - Transistors
• Technical Committee: TC 47 - Semiconductor devices
• Drafting Committee: WG 5 - TC 47/WG 5
• Current Stage: PPUB - Publication issued
• Start Date: 27-May-2022
• Completion Date: 11-May-2022

Standards Content (Sample)

IEC 63275-2 ®
Edition 1.0 2022-05
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Reliability test method for silicon carbide discrete
metal‑oxide semiconductor field effect transistors –
Part 2: Test method for bipolar degradation due to body diode operation

Dispositifs à semiconducteurs – Méthode d’essai de fiabilité pour les transistors
à effet de champ métal-oxyde-semiconducteurs discrets en carbure de
silicium –
Partie 2: Méthode d’essai de la dégradation bipolaire due au fonctionnement de
la diode intrinsèque
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IEC 63275-2 ®
Edition 1.0 2022-05
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Reliability test method for silicon carbide discrete

metal‑oxide semiconductor field effect transistors –

Part 2: Test method for bipolar degradation due to body diode operation

Dispositifs à semiconducteurs – Méthode d’essai de fiabilité pour les

transistors à effet de champ métal-oxyde-semiconducteurs discrets en carbure

de
silicium –
Partie 2: Méthode d’essai de la dégradation bipolaire due au fonctionnement de

la diode intrinsèque
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.30 ISBN 978-2-8322-0121-3

– 2 – IEC 63275-2:2022 © IEC 2022
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Method . 7
4.1 General . 7
4.2 Principle . 7
4.3 Requirements . 7
4.3.1 Samples . 7
4.3.2 Test temperature . 8
4.3.3 Test current . 8
4.3.4 Test time . 8
4.3.5 Failure criteria . 8
4.4 Parameter setting . 8
4.5 Procedures . 9
4.5.1 Setting . 9
4.5.2 Ambient temperature . 9
4.5.3 Initial measurement . 9
4.5.4 Stress current . 9
4.5.5 Intermediate measurement . 10
4.6 Evaluation . 10
4.7 Test report . 10

Figure 1 – Test flow chart . 7
Figure 2 – Circuit diagram for body diode current stress test . 9
Figure 3 – Rectangular current waveform by the current source in the test circuit . 9

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
RELIABILITY TEST METHOD FOR SILICON CARBIDE DISCRETE
METAL‑OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS –

Part 2: Test method for bipolar degradation due to body diode operation

FOREWORD
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IEC 63275-2 has been prepared by IEC technical committee 47: Semiconductor devices. It is
an International Standard.
The text of this International Standard is based on the following documents:
Draft Report on voting
47/2756/FDIS 47/2765/RVD
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.

– 4 – IEC 63275-2:2022 © IEC 2022
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/standardsdev/publications.
A list of all parts in the IEC 63275 series, published under the general title Semiconductor
devices – Reliability test method for silicon carbide discrete metal‑oxide semiconductor field
effect transistors, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
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