IEC 63275-2:2022

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

Dispositifs à semiconducteurs - Méthode d’essai de fiabilité pour les transistors à effet de champ métal-oxyde-semiconducteurs discrets en carbure de silicium - Partie 2: Méthode d’essai de la dégradation bipolaire due au fonctionnement de la diode intrinsèque

L’IEC 63275-2:2022 donne la méthode d’essai et une procédure utilisant cette méthode pour évaluer la dérive de la tension à l’état passant, la dérive de la résistance à l’état passant et la variation de tension de drain inverse des dispositifs MOSFET de puissance en carbure de silicium (SiC) en raison du fonctionnement de la diode intrinsèque. Cet essai n’est généralement pas demandé pour les transistors de puissance en Si.

General Information

• Status: Published
• Publication Date: 10-May-2022
• ICS: 31.080.30 - Transistors
• Technical Committee: TC 47 - Semiconductor devices
• Current Stage: PPUB - Publication issued
• Completion Date: 11-May-2022

Standards Content (sample)

IEC 63275-2
Edition 1.0 2022-05
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Reliability test method for silicon carbide discrete
metal‑oxide semiconductor field effect transistors –
Part 2: Test method for bipolar degradation due to body diode operation

Dispositifs à semiconducteurs – Méthode d’essai de fiabilité pour les transistors

à effet de champ métal-oxyde-semiconducteurs discrets en carbure de
silicium –
Partie 2: Méthode d’essai de la dégradation bipolaire due au fonctionnement de
la diode intrinsèque
IEC 63275-2:2022-05(en-fr)
---------------------- Page: 1 ----------------------
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---------------------- Page: 2 ----------------------
IEC 63275-2
Edition 1.0 2022-05
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Reliability test method for silicon carbide discrete
metal‑oxide semiconductor field effect transistors –
Part 2: Test method for bipolar degradation due to body diode operation
Dispositifs à semiconducteurs – Méthode d’essai de fiabilité pour les
transistors à effet de champ métal-oxyde-semiconducteurs discrets en carbure
silicium –
Partie 2: Méthode d’essai de la dégradation bipolaire due au fonctionnement de
la diode intrinsèque
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.30 ISBN 978-2-8322-0121-3

Warning! Make sure that you obtained this publication from an authorized distributor.

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® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale
---------------------- Page: 3 ----------------------
– 2 – IEC 63275-2:2022 © IEC 2022
CONTENTS

FOREWORD ........................................................................................................................... 3

INTRODUCTION ..................................................................................................................... 5

1 Scope .............................................................................................................................. 6

2 Normative references ...................................................................................................... 6

3 Terms and definitions ...................................................................................................... 6

4 Method ............................................................................................................................ 7

4.1 General ................................................................................................................... 7

4.2 Principle ................................................................................................................. 7

4.3 Requirements ......................................................................................................... 7

4.3.1 Samples .......................................................................................................... 7

4.3.2 Test temperature ............................................................................................. 8

4.3.3 Test current ..................................................................................................... 8

4.3.4 Test time ......................................................................................................... 8

4.3.5 Failure criteria ................................................................................................. 8

4.4 Parameter setting ................................................................................................... 8

4.5 Procedures ............................................................................................................. 9

4.5.1 Setting ............................................................................................................. 9

4.5.2 Ambient temperature ....................................................................................... 9

4.5.3 Initial measurement ......................................................................................... 9

4.5.4 Stress current .................................................................................................. 9

4.5.5 Intermediate measurement ............................................................................ 10

4.6 Evaluation ............................................................................................................. 10

4.7 Test report ............................................................................................................ 10

Figure 1 – Test flow chart ....................................................................................................... 7

Figure 2 – Circuit diagram for body diode current stress test ................................................... 9

Figure 3 – Rectangular current waveform by the current source in the test circuit ................... 9

---------------------- Page: 4 ----------------------
IEC 63275-2:2022 © IEC 2022 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
RELIABILITY TEST METHOD FOR SILICON CARBIDE DISCRETE
METAL‑OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS –
Part 2: Test method for bipolar degradation due to body diode operation
FOREWORD

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rights. IEC shall not be held responsible for identifying any or all such patent rights.

IEC 63275-2 has been prepared by IEC technical committee 47: Semiconductor devices. It is

an International Standard.
The text of this International Standard is based on the following documents:
Draft Report on voting
47/2756/FDIS 47/2765/RVD

Full information on the voting for its approval can be found in the report on voting indicated in

the above table.
The language used for the development of this International Standard is English.
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– 4 – IEC 63275-2:2022 © IEC 2022

This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in

accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available

at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are

described in greater detail at www.iec.ch/standardsdev/publications.

A list of all parts in the IEC 63275 series, published under the general title Semiconductor

devices – Reliability test method for silicon carbide discrete metal‑oxide semiconductor field

effect transistors, can be found on the IEC website.

The committee has decided that the contents of this document will remain unchanged until the

stability date indicated on the IEC website under webstore.iec.ch in the data related to the

specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
---------------------- Page: 6 ----------------------
IEC 63275-2:2022 © IEC 2022 – 5 –
INTRODUCTION

Silicon carbide (SiC) is widely used as a semiconductor material for next-generation power

semiconductor devices. SiC, as compared with silicon (Si), has superior physical properties

such as a higher breakdown electric field, higher thermal conductivity, lower carrier generation

rate, higher saturated electron drift velocity, and lower intrinsic carrier concentration. These

attributes realize SiC-based power semiconductor devices with faster switching speeds, lower

losses, higher blocking voltages, and higher temperature operation relative to standard Si based

power semiconductor devices.

Possible reliability issues include on-state voltage drop change, on-state resistance increase

and reverse drain voltage change of metal-oxide semiconductor field effect transistors due to a

current flowing through the body diode. This occurs because the body diode current causes the

formation of stacking faults that expand within the drift region of the MOSFET and impede

current flow within the area that they occupy. This increases the on-state resistance and

degrades the operation of the power electronics system. This effect will only occur if the active

device volume contains basal plane dislocations (BPDs), and there is electron-hole pair (EHP)

recombination such as occurs during forward biasing of the body diode of the SiC MOSFET.

That means some of the devices may show parameter drift, others will not drift. Therefore, it is

indispensable to establish an International Standard with regard to evaluation of on-state

voltage drop change and on-state resistance change as reliability issues.

This document defines the evaluation method of on-state voltage drop change and on-state

resistance change under body diode current stress on SiC metal-oxide semiconductor field

effect transistors.
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– 6 – IEC 63275-2:2022 © IEC 2022
SEMICONDUCTOR DEVICES –
RELIABILITY TEST METHOD FOR SILICON CARBIDE DISCRETE
METAL‑OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS –
Part 2: Test method for bipolar degradation due to body diode operation
1 Scope

This part of IEC 63275 gives the test method and a procedure using this method to evaluate

the on-state voltage change, on-state resistance change and reverse drain voltage change of

silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not

generally requested for Si power transistors.
2 Normative references

The following documents are referred to in the text in such a way that some or all of their content

constitutes requirements of this document. For dated references, only the edition cited applies.

For undated references, the latest edition of the referenced document (including any

amendments) applies.

IEC 60747-8, Semiconductor devices – Discrete devices – Part 8: Field-effect transistors

3 Terms and definitions

For the purposes of this document, the terms and definitions given in IEC 60747-8 and the

following apply.

ISO and IEC maintain terminology databases for use in standardization at the following

addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
3.1
silicon carbide
compound semiconductor material composed of silicon and carbon
3.2
on-state voltage change

change in the on-state voltage (V ) due to body diode current stress from the source

DS(on)
terminal of the device to the drain terminal
3.3
on-state resistance change

change in the on-state resistance (R ) due to body diode current stress from the source

DS(on)
terminal of the device to the drain terminal
3.4
reverse drain voltage change

change in the reverse drain voltage (V ) due to body diode current stress from the source

terminal of the device to the drain terminal
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IEC 63275-2:2022 © IEC 2022 – 7 –
4 Method
4.1 General

The change in values of the on-state voltage, the on-state resistance and the reverse drain

voltage occurs when body diode current flows through a body diode of n-channel vertical power

MOSFETs fabricated on SiC crystal. This test is intended to evaluate the change in values of

the on-state voltage, the on-state resistance and the reverse drain voltage under the body diode

current stress on n-channel vertical power MOSFETs fabricated on SiC crystal.
4.2 Principle
This test method evaluates the change in values of V , R and V by alternating
DS(on) DS(on) SD

between conducting the measurements and applying the stress through the body diode current

to the MOSFETs. The test flow chart is shown in Figure 1.
Figure 1 – Test flow chart
4.3 Requirements
4.3.1 Samples

Samples shall have the same MOSFET structure to the evaluation target product. Either the

wafer-level or the package-level may be selected for the evaluation. Package-level is

recommended to ensure ohmic contact to the MOSFET’s electrode.
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– 8 – IEC 63275-2:2022 © IEC 2022

Unless otherwise specified, a minimum of four samples is recommended for each test condition

to evaluate the representative behaviour of V , R and V change. For better
DS(on) DS(on) SD

statistics, a bigger sample size may be needed to ensure lower values of lot tolerance percent

defect (LTPD). When the test method is applied to qualify reliability of product, the sample size

should be defined by taking into consideration device-to-device deviation of change in values

of V , R and V , and target applications of the product.
DS(on) DS(on) SD
4.3.2 Test temperature

The test shall be performed at a temperature no higher than the maximum in the device

specifications. The measurement temperature should be set to the same temperature for each

measurement, and room temperature is recommended.
4.3.3 Test current

The test shall be performed at the rated diode forward current (if a pulsed current stress is

applied, then this would be the rated pulse current; if a DC current stress is applied, then this

would be the rated DC current), and at the rated case temperature and at or below the rated

maximum junction temperature. In order to regulate the temperature of the sample, pulse width

modulation current is recommended. V shall be set at the rated negative voltage to prevent

the MOSFET channel from conducting.
4.3.4 Test time

The test time shall be set individually to reach a limit of an acceptable change in values of

V , R and V , or to collect the data required to extrapolate the time to reach a limit

DS(on) DS(on) SD
of the acceptable change in values of V , R and V . The time for temperature
DS(on) DS(on) SD

ramping and measuring shall not be included in the test time. Extrapolation of degradation

effects shall not overestimate the actual degradation for longer stressing times if extrapolation

is performed. Measuring time shall not be included in the test time.
4.3.5 Failure criteria
The failure criteria of each change in values of V , R and V should be a 20 %
DS(on) DS(on) SD

change in initial values unless there are individual specifications. In addition, the failure criteria

should be linked to a maximum allowed change in the parameter value so that it does not violate

the data sheet specification or cause other failures in an intended application.
4.4 Parameter setting

Figure 2 shows the test circuit. This test requires equipment that is capable of providing

particular body diode current on the sample. I is the current source to apply body diode

current stress. V is the voltage source to apply negative gate bias during current stress test

on the sample.
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IEC 63275-2:2022 © IEC 2022 – 9 –
Key
A ammeter to measure body diode current of DUT
V voltmeter to measure reverse drain voltage of DUT
DUT device under test sample
V voltage source
I current source
Figure 2 – Circuit diagram for body diode current stress test

Figure 3 – Rectangular current waveform by the current source in the test circuit

4.5 Procedures
4.5.1 Setting
Set the sample in the test apparatus.
4.5.2 Ambient temperature
Set the ambient temperature to the test temperature.
4.5.3 Initial measurement
Measure the V , R and V of the sample at the measurement temperature.
DS(on) DS(on) SD
4.5.4 Stress current

Apply the current stress to the source terminal of the sample. When a temperature rise is

unacceptable in terms of current stress, a pulsed current source that generates rectangular

current waveform shall be used as shown in Figure 3. The on/off ratio shall be such that the

temperature rise does not exceed the rated temperature. The rise time and fall time of the

rectangular current waveform shall be such that the overshoot does not exceed the maximum

rating of the device. If using DC current stress, the temperature of the device shall be within

the maximum ratings as the temperature of the device is likely to rise.
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– 10 – IEC 63275-2:2022 © IEC 2022
4.5.5 Intermediate measurement
Measure the V , R and V of the sample at the measurement temperature as the
DS(on) DS(on) SD
i-th intermediate value V .
DS(on)
4.6 Evaluation
Evaluate ΔV , the change in value of the V at the time of i-th intermediate
DS(on) i DS(on)
measurement as
ΔV = V – V .
DS(on) i DS(on) i DS(on) 0
Evaluate ΔR , the change in value of the R at the time of i-th intermediate
DS(on) i DS(on)
measurement as
ΔR = R – R .
DS(on) i DS(on) i DS(on) 0

Evaluate ΔV , the change in value of the V at the time of i-th intermediate measurement

SD i SD
ΔV = V – V
SD i SD i SD 0
4.7 Test report
A test report shall be provided, that includes:
– sample identification;
– package type;
– test temperature;
– test current;
– on and off time of the rectangular current waveform, if used;
– test time;
– initial value of V , R and V ;
DS(on) DS(on) SD
– the change in values of V , R and V .
DS(on) DS(on) SD
___________
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– 12 – IEC 63275-2:2022 © IEC 2022
SOMMAIRE

AVANT-PROPOS .................................................................................................................. 13

INTRODUCTION ................................................................................................................... 15

1 Domaine d’application ................................................................................................... 16

2 Références normatives .................................................................................................. 16

3 Termes et définitions ..................................................................................................... 16

4 Méthode ........................................................................................................................ 17

4.1 Généralités ........................................................................................................... 17

4.2 Principe ................................................................................................................ 17

4.3 Exigences ............................................................................................................. 18

4.3.1 Échantillons ................................................................................................... 18

4.3.2 Température d’essai ...................................................................................... 18

4.3.3 Courant d'essai .............................................................................................. 18

4.3.4 Durée d’essai ................................................................................................ 18

4.3.5 Critères de défaillance ................................................................................... 18

4.4 Réglage des paramètres ....................................................................................... 18

4.5 Procédures ........................................................................................................... 19

4.5.1 Réglage ......................................................................................................... 19

4.5.2 Température ambiante ................................................................................... 19

4.5.3 Mesure initiale ............................................................................................... 19

4.5.4 Contrainte de courant .................................................................................... 19

4.5.5 Mesure intermédiaire ..................................................................................... 20

4.6 Évaluation ............................................................................................................. 20

4.7 Rapport d’essai ..................................................................................................... 20

Figure 1 – Logigramme d’essai ............................................................................................. 17

Figure 2 – Schéma de circuit pour l’essai de contrainte de courant dans la diode

intrinsèque ............................................................................................................................ 19

Figure 3 – Forme d’onde de courant rectangulaire par la source de courant dans le

circuit d’essai- ...................................................................................................................... 19

---------------------- Page: 13 ----------------------
IEC 63275-2:2022 © IEC 2022 – 13 –
COMMISSION ÉLECTROTECHNIQUE INTERNATIONALE
____________
DISPOSITIFS À SEMICONDUCTEURS –
MÉTHODE D’ESSAI DE FIABILITÉ POUR LES TRANSISTORS À EFFET DE
CHAMP MÉTAL-OXYDE-SEMICONDUCTEURS DISCRETS EN CARBURE DE
SILICIUM –
Partie 2: Méthode d’essai de la dégradation bipolaire due au
fonctionnement de la diode intrinsèque
AVANT-PROPOS

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