Semiconductor devices - Micro-electromechanical devices - Part 30: Measurement methods of electro-mechanical conversion characteristics of MEMS piezoelectric thin film

IEC 62047-30:2017(E) specifies measuring methods of electro-mechanical conversion characteristics of piezoelectric thin film used for micro sensors and micro actuators, and its reporting schema to determine the characteristic parameters for consumer, industry or any other applications of piezoelectric devices. This document applies to piezoelectric thin films fabricated by MEMS process

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Status
Published
Publication Date
14-Sep-2017
Current Stage
PPUB - Publication issued
Start Date
15-Sep-2017
Completion Date
15-Sep-2017
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IEC 62047-30
Edition 1.0 2017-09
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 30: Measurement methods of electro-mechanical conversion characteristics
of MEMS piezoelectric thin film
IEC 62047-30:2017-09(en)
---------------------- Page: 1 ----------------------
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---------------------- Page: 2 ----------------------
IEC 62047-30
Edition 1.0 2017-09
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 30: Measurement methods of electro-mechanical conversion characteristics
of MEMS piezoelectric thin film
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99; 31.140 ISBN 978-2-8322-4820-1

Warning! Make sure that you obtained this publication from an authorized distributor.

® Registered trademark of the International Electrotechnical Commission
---------------------- Page: 3 ----------------------
– 2 – IEC 62047-30:2017 © IEC 2017
CONTENTS

FOREWORD ........................................................................................................................... 4

1 Scope .............................................................................................................................. 6

2 Normative references ...................................................................................................... 6

3 Terms and definitions ...................................................................................................... 6

4 Test bed of MEMS piezoelectric thin film ......................................................................... 6

4.1 General ................................................................................................................... 6

4.2 Functional blocks and components ......................................................................... 8

4.2.1 General ........................................................................................................... 8

4.2.2 Clamp .............................................................................................................. 8

4.2.3 Linear actuator ................................................................................................ 8

4.2.4 Displacement meter ......................................................................................... 9

4.2.5 Electric measurement instrument ..................................................................... 9

4.2.6 Power source .................................................................................................. 9

5 Thin film under testing ..................................................................................................... 9

5.1 General ................................................................................................................... 9

5.2 Measurement principle ............................................................................................ 9

5.3 Measuring procedures of direct transverse piezoelectric coefficient ...................... 10

5.4 Measuring procedures of converse transverse piezoelectric coefficient ................. 10

6 Test report ..................................................................................................................... 11

Annex A (informative) Example of measuring method of MEMS piezoelectric thin film .......... 13

A.1 General ................................................................................................................. 13

A.2 Sample preparation procedures ............................................................................ 13

A.3 Measuring procedures .......................................................................................... 13

A.3.1 Measuring procedures of direct transverse piezoelectric coefficient ............... 13

A.3.2 Measuring procedures of converse transverse piezoelectric coefficient.......... 15

A.4 Test report ............................................................................................................ 18

A.5 Equation of neutral plane ...................................................................................... 19

Bibliography .......................................................................................................................... 20

Figure 1 – Test bed of direct and converse transverse piezoelectric coefficient of

MEMS piezoelectric thin film ................................................................................................... 7

Figure A.1 – Tip displacement and calculated direct transverse piezoelectric coefficient ....... 15

Figure A.2 – Input voltage and calculated converse transverse piezoelectric coefficient ....... 17

Table 1 – Symbols and designations of test bed ..................................................................... 8

Table A.1 – Poling treatment conditions ................................................................................ 14

Table A.2 – Material properties for calculation of direct transverse piezoelectric

coefficient ............................................................................................................................. 14

Table A.3 – Output voltage and calculated transverse piezoelectric coefficient .................... 14

Table A.4 – Material properties for calculation of converse transverse piezoelectric

coefficient ............................................................................................................................. 16

Table A.5 – Tip displacement of cantilever and calculated transverse piezoelectric

coefficient ............................................................................................................................. 16

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IEC 62047-30:2017 © IEC 2017 – 3 –
Table A.6 – Example of measuring conditions and results of electro-mechanical

characteristics of piezoelectric thin film as mandatory ........................................................... 18

Table A.7 – Example of measuring conditions and results of electro-mechanical

characteristics of piezoelectric thin film as optional ............................................................... 19

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– 4 – IEC 62047-30:2017 © IEC 2017
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 30: Measurement methods of electro-mechanical conversion
characteristics of MEMS piezoelectric thin film
FOREWORD

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International Standard IEC 62047-30 has been prepared by subcommittee 47F:

Micro-electromechanical systems, of IEC technical committee 47: Semiconductor devices.

The text of this International Standard is based on the following documents:
FDIS Report on voting
47F/286/FDIS 47F/289/RVD

Full information on the voting for the approval of this International Standard can be found in

the report on voting indicated in the above table.

This document has been drafted in accordance with the ISO/IEC Directives, Part 2.

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IEC 62047-30:2017 © IEC 2017 – 5 –

A list of all parts in the IEC 62047 series, published under the general title Semiconductor

devices – Micro-electromechanical devices, can be found on the IEC website.

The committee has decided that the contents of this document will remain unchanged until the

stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to

the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
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IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates

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colour printer.
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– 6 – IEC 62047-30:2017 © IEC 2017
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 30: Measurement methods of electro-mechanical conversion
characteristics of MEMS piezoelectric thin film
1 Scope

This part of IEC 62047 specifies measuring methods of electro-mechanical conversion

characteristics of piezoelectric thin film used for micro sensors and micro actuators, and its

reporting schema to determine the characteristic parameters for consumer, industry or any

other applications of piezoelectric devices. This document applies to piezoelectric thin films

fabricated by MEMS process.
2 Normative references
There are no normative references in this document.
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.

ISO and IEC maintain terminological databases for use in standardization at the following

addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
3.1
unimorph beam
beam composed of piezoelectric thin film on substrate
3.2
direct transverse piezoelectric coefficient

transverse piezoelectric coefficient of the piezoelectric thin film calculated from generated

charge or voltage caused by strain or stress
3.3
converse transverse piezoelectric coefficient

transverse piezoelectric coefficient of the piezoelectric thin film calculated from strain or

stress caused by electric field or voltage
4 Test bed of MEMS piezoelectric thin film
4.1 General

These measuring methods of the transverse piezoelectric properties apply to the unimorph

beam. Symbols and designations of test bed are shown in Table 1.
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IEC 62047-30:2017 © IEC 2017 – 7 –
1 2
IEC
Key
1 thin film under testing
2 electrodes

The Electrodes are contacted with the top side and bottom side surface of the thin film under testing.

3 substrate
4 clamp
5 linear actuator (not in use for converse piezoelectric measurement)
6 displacement meter

7 electric measurement instrument (i.e. voltmeter, charge meter, ammeter, oscilloscope, or lock-in amp) in direct

piezoelectric measurement, power source (function generator and amplifier) in converse piezoelectric

measurement
Figure 1 – Test bed of direct and converse transverse piezoelectric
coefficient of MEMS piezoelectric thin film
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– 8 – IEC 62047-30:2017 © IEC 2017
Table 1 – Symbols and designations of test bed
Kind of properties Symbol Unit Designation
l m length of cantilever
m width of cantilever
Dimension of
cantilever specimen
m thickness of base cantilever
h m thickness of piezoelectric thin film
C/m effective transverse piezoelectric coefficient
31,f
C/m effective transverse piezoelectric coefficient (direct effect)
31,f
effective transverse piezoelectric coefficient (converse
N/Vm
31,f
effect)
extrapolated effective transverse piezoelectric coefficient
Electro-mechanical N/Vm
e (V )
31,f in,0
at 0 V (converse effect)
conversion properties
minimum effective transverse piezoelectric coefficient
N/Vm
e (V )
31,f in,min
(converse effect at the lowest V )
maximum effective transverse piezoelectric coefficient
N/Vm
e (V )
31,f in,max
(converse effect at the highest V )
m/V transverse piezoelectric coefficient (d-form)
F capacitance of piezoelectric thin film
V V output voltage
out
Electrical properties
V V input peak-to-peak voltage
dielectric loss
tan δ
E E
m /N elastic compliances of piezoelectric thin film
s , s
11 12
D m input tip displacement
m output tip displacement
out
Mechanical N/m Young’s modulus of base cantilever
properties
ν Poisson’s ratio of base cantilever
E N/m Young’s modulus of piezoelectric thin film
position of neutral plane of the unimorph cantilever from
y m
the bottom
4.2 Functional blocks and components
4.2.1 General

Figure 1 provides fundamental configurations consisted of functional blocks or components for

test bed of direct and converse transverse piezoelectric coefficient of MEMS piezoelectric thin

film. Details of the functional blocks or components named as keys are provided in 4.2.2 to

4.2.6.
4.2.2 Clamp
The clamp holds one end of the unimorph beam to make a cantilever.

NOTE The clamping condition is confirmed by mechanical Q factor at the resonance of the cantilever.

4.2.3 Linear actuator

The linear actuator provides displacement to the tip of the cantilever with triangular wave. It is

used for direct piezoelectric measurements.
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IEC 62047-30:2017 © IEC 2017 – 9 –
4.2.4 Displacement meter
The displacement meter measures the tip displacement of the cantilever.
4.2.5 Electric measurement instrument

In measurements of direct piezoelectric effect, the thin film under testing generates electric

output between electrodes. An electric measurement instrument (i.e. voltmeter, charge meter,

ammeter, oscilloscope, o
...

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