IEC 62047-30:2017

Semiconductor devices - Micro-electromechanical devices - Part 30: Measurement methods of electro-mechanical conversion characteristics of MEMS piezoelectric thin film

IEC 62047-30:2017(E) specifies measuring methods of electro-mechanical conversion characteristics of piezoelectric thin film used for micro sensors and micro actuators, and its reporting schema to determine the characteristic parameters for consumer, industry or any other applications of piezoelectric devices. This document applies to piezoelectric thin films fabricated by MEMS process

General Information

• Status: Published
• Publication Date: 14-Sep-2017
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 31.080.99 - Other semiconductor devices
• ICS: 31.140 - Piezoelectric devices
• Technical Committee: SC 47F - Micro-electromechanical systems
• Current Stage: PPUB - Publication issued
• Start Date: 14-Oct-2017
• Completion Date: 15-Sep-2017

Standards Content (Sample)

IEC 62047-30 ®
Edition 1.0 2017-09
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 30: Measurement methods of electro-mechanical conversion characteristics
of MEMS piezoelectric thin film
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IEC 62047-30 ®
Edition 1.0 2017-09
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Micro-electromechanical devices –

Part 30: Measurement methods of electro-mechanical conversion characteristics

of MEMS piezoelectric thin film

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99; 31.140 ISBN 978-2-8322-4820-1

– 2 – IEC 62047-30:2017 © IEC 2017
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Test bed of MEMS piezoelectric thin film . 6
4.1 General . 6
4.2 Functional blocks and components . 8
4.2.1 General . 8
4.2.2 Clamp . 8
4.2.3 Linear actuator . 8
4.2.4 Displacement meter . 9
4.2.5 Electric measurement instrument . 9
4.2.6 Power source . 9
5 Thin film under testing . 9
5.1 General . 9
5.2 Measurement principle . 9
5.3 Measuring procedures of direct transverse piezoelectric coefficient . 10
5.4 Measuring procedures of converse transverse piezoelectric coefficient . 10
6 Test report . 11
Annex A (informative) Example of measuring method of MEMS piezoelectric thin film . 13
A.1 General . 13
A.2 Sample preparation procedures . 13
A.3 Measuring procedures . 13
A.3.1 Measuring procedures of direct transverse piezoelectric coefficient . 13
A.3.2 Measuring procedures of converse transverse piezoelectric coefficient. 15
A.4 Test report . 18
A.5 Equation of neutral plane . 19
Bibliography . 20

Figure 1 – Test bed of direct and converse transverse piezoelectric coefficient of
MEMS piezoelectric thin film . 7
Figure A.1 – Tip displacement and calculated direct transverse piezoelectric coefficient . 15
Figure A.2 – Input voltage and calculated converse transverse piezoelectric coefficient . 17

Table 1 – Symbols and designations of test bed . 8
Table A.1 – Poling treatment conditions . 14
Table A.2 – Material properties for calculation of direct transverse piezoelectric
coefficient . 14
Table A.3 – Output voltage and calculated transverse piezoelectric coefficient . 14
Table A.4 – Material properties for calculation of converse transverse piezoelectric
coefficient . 16
Table A.5 – Tip displacement of cantilever and calculated transverse piezoelectric
coefficient . 16

Table A.6 – Example of measuring conditions and results of electro-mechanical
characteristics of piezoelectric thin film as mandatory . 18
Table A.7 – Example of measuring conditions and results of electro-mechanical
characteristics of piezoelectric thin film as optional . 19

– 4 – IEC 62047-30:2017 © IEC 2017
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 30: Measurement methods of electro-mechanical conversion
characteristics of MEMS piezoelectric thin film

FOREWORD
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International Standard IEC 62047-30 has been prepared by subcommittee 47F:
Micro-electromechanical systems, of IEC technical committee 47: Semiconductor devices.
The text of this International Standard is based on the following documents:
FDIS Report on voting
47F/286/FDIS 47F/289/RVD
Full information on the voting for the approval of this International Standard can be found in
the report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.

A list of all parts in the IEC 62047 series, published under the general title Semiconductor
devices – Micro-electromechanical devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
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– 6 – IEC 62047-30:2017 © IEC 2017
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 30: Measurement methods of electro-mechanical conversion
characteristics of MEMS piezoelectric thin film

1 Scope
This part of IEC 62047 specifies measuring methods of electro-mechanical conversion
characteristics of piezoelectric thin film used for micro sensors and micro actuators, and its
reporting schema to determine the characteristic parameters for consumer, industry or any
other applications of piezoelectric devices. This document applies to piezoelectric thin films
fabricated by MEMS process.
2 Normative references
There are no normative references in this document.
3 Terms and definitions
For the purposes of this
...