IEC 62276:2005

Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods

Provides specifications for manufacturing piezoelectric single crystal wafers to be used in surface acoustic wave devices. Applies to the manufacture of synthetic quartz, lithium niobate, lithium tantalate, lithium tetraborate, and lanthanum gallium silicate single crystal wafers intended for use as substrates in the manufacture of surface acoustic wave filters and resonators.

General Information

• Status: Published
• Publication Date: 29-May-2005
• ICS: 31.140 - Piezoelectric devices
• Technical Committee: TC 49 - Piezoelectric, dielectric and electrostatic devices and associated materials for frequency control, selection and detection
• Drafting Committee: WG 5 - TC 49/WG 5
• Current Stage: DELPUB - Deleted Publication
• Completion Date: 19-Oct-2012

Relations

• Replaces: IEC PAS 62276:2001 - Single crystal wafers applied for surface acoustic wave device - Specification and measuring method
• Effective Date: 05-Sep-2023
• Revised: IEC 62276:2012 - Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
• Effective Date: 05-Sep-2023

Standards Content (Sample)

INTERNATIONAL IEC
STANDARD 62276
First edition
2005-05
Single crystal wafers for surface acoustic
wave (SAW) device applications –
Specifications and measuring methods

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INTERNATIONAL IEC
STANDARD 62276
First edition
2005-05
Single crystal wafers for surface acoustic
wave (SAW) device applications –
Specifications and measuring methods

 IEC 2005  Copyright - all rights reserved
No part of this publication may be reproduced or utilized in any form or by any means, electronic or
mechanical, including photocopying and microfilm, without permission in writing from the publisher.
International Electrotechnical Commission, 3, rue de Varembé, PO Box 131, CH-1211 Geneva 20, Switzerland
Telephone: [phone] Telefax: [phone] E-mail: [e-mail] Web: www.iec.ch
PRICE CODE
Commission Electrotechnique Internationale V
International Electrotechnical Commission
МеждународнаяЭлектротехническаяКомиссия
For price, see current catalogue

– 2 – 62276  IEC:2005(E)
CONTENTS
FOREWORD.4

INTRODUCTION.6

1 Scope.7

2 Normative references .7

3 Terms and definitions .7

4 Requirements .13

4.1 Material specification.13

4.2 Wafer specifications .13
5 Sampling .16
5.1 Sampling .16
5.2 Sampling frequency.17
5.3 Inspection of whole population .17
6 Test methods .17
6.1 Diameter .17
6.2 Thickness.17
6.3 Dimension of OF .17
6.4 Orientation of OF.17
6.5 TV5 .17
6.6 Warp .18
6.7 TTV.18
6.8 Front surface defects.18
6.9 Inclusions.18
6.10 Back surface roughness .18
6.11 Orientation .18
6.12 Curie temperature .18
6.13 Lattice constant.18
7 Identification, labelling, packaging, delivery condition.18
7.1 Packaging .18
7.2 Labelling and identification .18
7.3 Delivery condition.19
8 Measurement of Curie temperature .19
8.1 General .19

8.2 DTA method .19
8.3 Dielectric constant method .19
9 Measurement of lattice constant (Bond method) .20
10 Measurement of face angle by X-ray .21
10.1 Measurement principle .21
10.2 Measurement method.22
10.3 Measuring surface orientation of wafer .22
10.4 Measuring OF flat orientation .22
10.5 Typical wafer orientations and reference planes .23
11 Visual inspections .23
11.1 Front surface inspection method.23

62276  IEC:2005(E) – 3 –
Annex A (normative) Expression using Euler angle description for piezoelectric

single crystals.24

A.1 Wafer orientation using Euler angle description .24

Annex B (informative) Manufacturing process for SAW wafers .27

B.1 Crystal growth methods .27

B.2 Standard mechanical wafer manufacturing .31

Bibliography.33

Figure 1 – Wafer sketch and measurement points for TV5 determination .9
Figure 2 – Schematic diagram of TTV .10
Figure 3 – Schematic diagram of warp .10
Figure 4 – Example of site distribution for LTV measurement. All sites have their
centres within the FQA.11
Figure 5 – LTV is a positive number and is measured at each site .11
Figure 6 – Schematic of a DTA system .19
Figure 7 – Schematic of a dielectric constant measurement system .20
Figure 8 – The Bond method.21
Figure 9 – Measurement method by X-ray.22
Figure 10 – Relationship between cut angle and lattice face .22
Figure A.1 – Definition of Euler angles to rotate coordinate system (X,Y,Z)
onto (x , x , x ).24
1 2 3
Figure A.2 – SAW wafer coordinate system .25
Figure A.3 – Relationship between the crystal axes, Euler angles,
and SAW orientation for some wafer orientations.26
Figure B.1 – Czochralski crystal growth method.27
Figure B.2 – Example of non-uniformity in crystals grown from different starting melt
compositions.29
Figure B.3 – Schematic of a vertical Bridgman furnace and example of temperature
distribution.30

Table 1 – Description of wafer orientations .12
Table 2 – Roughness, warp, TV5 and TTV specification limits .15
Table 3 – Crystal planes to determine surface and OF orientations.23
Table A.1 – Selected SAW substrate orientations and corresponding Euler angles .25

– 4 – 62276  IEC:2005(E)
INTERNATIONAL ELECTROTECHNICAL COMMISSION

____________
SINGLE CRYSTAL WAFERS FOR SURFACE ACOUSTIC

WAVE (SAW) DEVICE APPLICATIONS –

SPECIFICATIONS AND MEASURING METHODS

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