IEC TS 62607-6-6:2021

Nanomanufacturing - Key control characteristics - Part 6-6: Graphene - Strain uniformity: Raman spectroscopy

IEC TS 62607-6-6:2021(E) establishes a standardized method to determine the structural key control characteristic
• strain uniformity
for single-layer graphene by
• Raman spectroscopy.
The width of the 2D-peak in the Raman spectrum is analysed to calculate the strain uniformity parameter which is a figure of merit to quantify the influence of nano-scale strain variations on the electronic properties of the layer. The classification will help manufacturers to classify their material quality to provide an upper limit of the electronic performance of the characterized graphene, to decide whether or not the graphene material quality is potentially suitable for various applications.

General Information

• Status: Published
• Publication Date: 13-Oct-2021
• ICS: 07.120 - Nanotechnologies
• Technical Committee: TC 113 - Nanotechnology for electrotechnical products and systems
• Drafting Committee: PT 62607-6-6 - TC 113/PT 62607-6-6
• Current Stage: PPUB - Publication issued
• Start Date: 03-Nov-2021
• Completion Date: 14-Oct-2021

Standards Content (Sample)

IEC TS 62607-6-6 ®
Edition 1.0 2021-10
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –
Part 6-6: Graphene – Strain uniformity: Raman spectroscopy
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IEC TS 62607-6-6 ®
Edition 1.0 2021-10
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –

Part 6-6: Graphene – Strain uniformity: Raman spectroscopy

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 07.120 ISBN 978-2-8322-1033-5

– 2 – IEC TS 62607-6-6:2021 © IEC 2021
CONTENTS
FOREWORD . 4
INTRODUCTION . 6
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 7
3.1 General terms . 8
3.2 Key control characteristics . 8
3.3 Measurement related terms . 9
4 General introduction . 9
4.1 Measurement principle . 9
4.2 Sample preparation method . 10
4.3 Test equipment . 11
4.4 Calibration standards . 11
5 Measurement procedure . 12
5.1 Calibration of test equipment . 12
5.2 Description of the measurement procedure . 12
5.3 Measurement accuracy . 12
6 Data analysis/interpretation of results . 12
7 Sampling plan . 14
8 Test report . 14
Annex A (informative) Format of the test report . 15
Annex B (normative) Sampling plan . 17
B.1 General . 17
B.2 Sampling plan for circular substrates . 17
B.3 Sampling plan for square substrates . 18
B.4 Sampling plan for irregular substrates . 19
Annex C (informative) Recommendations for wavelengths depending on substrate . 20
Annex D (informative) Examples of Raman spectra of single-layer graphene on
different substrates . 21
−1
D.1 Example 1: FWHM(2D) = 16,6 cm – Graphene encapsulated in hexagonal
boron nitride . 21
−1
D.2 Example 2: FWHM(2D) = 22,3 cm – Graphene on SiO covered with hBN . 21
−1
D.3 Example 3: FWHM(2D) = 25,3 cm – Graphene on SiO . 22
−1
D.4 Example 4: FWHM(2D) = 34,8 cm – Graphene on SiO substrate covered
with hBN . 23
−1
D.5 Example 5: FWHM(2D) = 40,3 cm – Graphene on SiO covered with very
thin hBN . 23
Annex E (informative) Relation between observed Raman 2D linewidth and carrier
mobility . 25
Bibliography . 27

Figure 1 – Typical Raman spectra of an exfoliated graphene flake adopted from [6] . 10
Figure 2 – Schematic illustration of a confocal Raman setup . 11
Figure 3 – Example FWHM(2D) Raman map . 13
Figure 4 – Example FWHM(2D) histogram obtained from the Raman map in Figure 3 . 13

Figure B.1 – Sampling plan for circular substrates of diameter a . 17
Figure B.2 – Sampling plan for square substrates with edge length a . 18
Figure B.3 – Sampling plan for irregular substrates . 19
Figure D.1 – Spectrum of graphene encapsulated in hBN . 21
Figure D.2 – Spectrum of graphene on SiO covered with hBN . 22
Figure D.3 – Spectrum of graphene on SiO . 22
Figure D.4 – Spectrum of graphene on SiO covered with hBN . 23
Figure D.5 – Spectrum of graphene on SiO covered with hBN . 24
Figure E.1 – Relation of the inverse mobility and the average full width at half
maximum FWHM(2D) of the Raman 2D-peak . 26

Table A.1 – Sample identification . 15
Table A.2 – General material information . 15
Table A.3 – Test related information . 16
Table A.4 – Schematic of sample geometry/structure . 16
Table A.5 – Measured key control characteristic . 16
Table B.1 – Sampling plan for circular substrates . 18
Table B.2 – Sampling plan for square substrates . 18
Table C.1 – Laser wavelength recommendations . 20

– 4 – IEC TS 62607-6-6:2021 © IEC 2021
INTERNATIONAL ELECTROTECHNICAL COMMISSION
_____________
NANOMANUFACTURING –
KEY CONTROL CHARACTERISTICS –
Part 6-6: Graphene –
Strain uniformity: Raman spectroscopy

FOREWORD
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IEC TS 62607-6-6 has been prepared by IEC technical committee 113: Nanotechnology for
electrotechnical products and systems. It is a Technical Specification.
The text of this Technical Specification is based on the following documents:
Draft Report on voting
113/579/DTS 113/605/RVDTS
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this Technical Specification is English.

This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/ref
...