ISO 5618-1:2023
(Main)Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for GaN crystal surface defects — Part 1: Classification of defects
Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for GaN crystal surface defects — Part 1: Classification of defects
This document gives a classification of the dislocations and process-induced defects, from among the various surface defects, that occur on single-crystal gallium nitride (GaN) substrates or single-crystal GaN films. It is applicable to the dislocations and process-induced defects exposed on the surface of the following types of GaN substrates or films: — single-crystal GaN substrate; — single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate; — single-crystal GaN film formed by heteroepitaxial growth on a single-crystal aluminium oxide (Al2O3), silicon carbide (SiC) or silicon (Si) substrate. It is not applicable to defects exposed on the surface if the absolute value of the acute angle between the surface normal and the c-axis of GaN is ≥ 8°.
Céramiques techniques — Méthode d’essai pour les défauts de surface des cristaux de GaN — Partie 1: Classification des défauts
Le présent document donne une classification des dislocations et des défauts induits par le process parmi les différents défauts de surface rencontrés sur les substrats de nitrure de gallium (GaN) monocristallin ou les films de GaN monocristallin. Il est applicable aux dislocations et défauts induits par le process émergents à la surface des types de substrats ou de films de GaN suivants: — substrat de GaN monocristallin; — film de GaN monocristallin formé par croissance homoépitaxiale sur un substrat de GaN monocristallin; — film de GaN monocristallin formé par croissance hétéroépitaxiale sur un substrat monocristallin d’oxyde d’aluminium (Al2O3), de carbure de silicium (SiC) ou de silicium (Si). Il n’est pas applicable aux défauts émergents à la surface si la valeur absolue de l’angle aigu entre la perpendiculaire à la surface et l’axe c du GaN est supérieur ou égal à 8°.
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INTERNATIONAL ISO
STANDARD 5618-1
First edition
2023-11
Fine ceramics (advanced ceramics,
advanced technical ceramics) —
Test method for GaN crystal surface
defects —
Part 1:
Classification of defects
Céramiques techniques — Méthode d’essai pour les défauts de surface
des cristaux de GaN —
Partie 1: Classification des défauts
Reference number
ISO 5618-1:2023(E)
© ISO 2023
---------------------- Page: 1 ----------------------
ISO 5618-1:2023(E)
COPYRIGHT PROTECTED DOCUMENT
© ISO 2023
All rights reserved. Unless otherwise specified, or required in the context of its implementation, no part of this publication may
be reproduced or utilized otherwise in any form or by any means, electronic or mechanical, including photocopying, or posting on
the internet or an intranet, without prior written permission. Permission can be requested from either ISO at the address below
or ISO’s member body in the country of the requester.
ISO copyright office
CP 401 • Ch. de Blandonnet 8
CH-1214 Vernier, Geneva
Phone: +41 22 749 01 11
Email: copyright@iso.org
Website: www.iso.org
Published in Switzerland
ii
© ISO 2023 – All rights reserved
---------------------- Page: 2 ----------------------
ISO 5618-1:2023(E)
Contents Page
Foreword .iv
Introduction .v
1 Scope . 1
2 Normative references . 1
3 Terms and definitions . 1
4 Classification of defects . 3
4.1 General . 3
4.2 Description of the defect classes . 3
4.2.1 Dislocation . 3
4.2.2 Process-induced defects . 5
Bibliography . 7
iii
© ISO 2023 – All rights reserved
---------------------- Page: 3 ----------------------
ISO 5618-1:2023(E)
Foreword
ISO (the International Organization for Standardization) is a worldwide federation of national standards
bodies (ISO member bodies). The work of preparing International Standards is normally carried out
through ISO technical committees. Each member body interested in a subject for which a technical
committee has been established has the right to be represented on that committee. International
organizations, governmental and non-governmental, in liaison with ISO, also take part in the work.
ISO collaborates closely with the International Electrotechnical Commission (IEC) on all matters of
electrotechnical standardization.
The procedures used to develop this document and those intended for its further maintenance are
described in the ISO/IEC Directives, Part 1. In particular, the different approval criteria needed for the
different types of ISO document should be noted. This document was drafted in accordance with the
editorial rules of the ISO/IEC Directives, Part 2 (see www.iso.org/directives).
ISO draws attention to the possibility that the implementation of this document may involve the use
of (a) patent(s). ISO takes no position concerning the evidence, validity or applicability of any claimed
patent rights in respect thereof. As of the date of
...
INTERNATIONAL ISO
STANDARD 5618-1
First edition
Fine ceramics (advanced ceramics,
advanced technical ceramics) —
Test method for GaN crystal surface
defects —
Part 1:
Classification of defects
PROOF/ÉPREUVE
Reference number
ISO 5618-1:2023(E)
© ISO 2023
---------------------- Page: 1 ----------------------
ISO 5618-1:2023(E)
COPYRIGHT PROTECTED DOCUMENT
© ISO 2023
All rights reserved. Unless otherwise specified, or required in the context of its implementation, no part of this publication may
be reproduced or utilized otherwise in any form or by any means, electronic or mechanical, including photocopying, or posting on
the internet or an intranet, without prior written permission. Permission can be requested from either ISO at the address below
or ISO’s member body in the country of the requester.
ISO copyright office
CP 401 • Ch. de Blandonnet 8
CH-1214 Vernier, Geneva
Phone: +41 22 749 01 11
Email: copyright@iso.org
Website: www.iso.org
Published in Switzerland
ii
PROOF/ÉPREUVE © ISO 2023 – All rights reserved
---------------------- Page: 2 ----------------------
ISO 5618-1:2023(E)
Contents Page
Foreword .iv
Introduction .v
1 Scope . 1
2 Normative references . 1
3 Terms and definitions . 1
4 Classification of defects . 3
4.1 General . 3
4.2 Description of the defect classes . 3
4.2.1 Dislocation . 3
4.2.2 Process-induced defects . 5
Bibliography . 7
iii
© ISO 2023 – All rights reserved PROOF/ÉPREUVE
---------------------- Page: 3 ----------------------
ISO 5618-1:2023(E)
Foreword
ISO (the International Organization for Standardization) is a worldwide federation of national standards
bodies (ISO member bodies). The work of preparing International Standards is normally carried out
through ISO technical committees. Each member body interested in a subject for which a technical
committee has been established has the right to be represented on that committee. International
organizations, governmental and non-governmental, in liaison with ISO, also take part in the work.
ISO collaborates closely with the International Electrotechnical Commission (IEC) on all matters of
electrotechnical standardization.
The procedures used to develop this document and those intended for its further maintenance are
described in the ISO/IEC Directives, Part 1. In particular, the different approval criteria needed for the
different types of ISO document should be noted. This document was drafted in accordance with the
editorial rules of the ISO/IEC Directives, Part 2 (see www.iso.org/directives).
ISO draws attention to the possibility that the implementation of this document may involve the use
of (a) patent(s). ISO takes no position concerning the evidence, validity or applicability of any claimed
patent rights in respect thereof. As of the date of publication of this document, ISO had not received
notice of (a) patent(s) which may be require
...
ISO/PRF 5618-1:2023(E)
ISO/TC 206/WG 7
Secretariat: JISC
Date: 2023-09-20
Fine ceramics (advanced ceramics, advanced technical
ceramics) — Test method for GaN crystal surface defects —
Part 1:
Classification of defects
FDIS stage
© ISO 2023 – All rights reserved
---------------------- Page: 1 ----------------------
ISO/PRF 5618-1:2023(E)
© ISO 20XX2023
All rights reserved. Unless otherwise specified, or required in the context of its implementation, no part of this
publication may be reproduced or utilized otherwise in any form or by any means, electronic or mechanical,
including photocopying, or posting on the internet or an intranet, without prior written permission. Permission can
be requested from either ISO at the address below or ISO'sISO’s member body in the country of the requester.
ISO copyright office
CP 401 • Ch. de Blandonnet 8
CH-1214 Vernier, Geneva
Phone: + 41 22 749 01 11
Fax: +41 22 749 09 47
EmailE-mail: copyright@iso.org
Website: www.iso.org
Published in Switzerland
ii © ISO 2023 – All rights reserved
---------------------- Page: 2 ----------------------
ISO/PRF 5618-1:2023(E)
Contents
Foreword . iv
Introduction . v
1 Scope . 1
2 Normative references . 1
3 Terms and definitions . 1
4 Classification of defects . 3
4.1 General . 3
4.2 Description of the defect classes. 3
4.2.1 Dislocation . 3
4.2.2 Process-induced defects . 7
Bibliography . 9
© ISO 2023 – All rights reserved iii
---------------------- Page: 3 ----------------------
ISO/PRF 5618-1:2023(E)
Foreword
ISO (the International Organization for Standardization) is a worldwide federation of national standards
bodies (ISO member bodies). The work of preparing International Standards is normally carried out
through ISO technical committees. Each member body interested in a subject for which a technical
committee has been established has the right to be represented on that committee. International
organizations, governmental and non-governmental, in liaison with ISO, also take part in the work. ISO
collaborates closely with the International Electrotechnical Commission (IEC) on all matters of
electrotechnical standardization.
The procedures used to develop this document and those intended for its further maintenance are
described in the ISO/IEC Directives, Part 1. In particular, the different approval criteria needed for the
different types of ISO document should be noted. This document was drafted in accordance with the
editorial rules of the ISO/IEC Directives, Part 2 (see www.iso.org/directives).
ISO draws attention to the possibility that the implementation of this document may involve the use of
(a) patent(s). ISO takes no position concerning the evidence, validity or applicability of any claimed
patent rights in respect thereof. As of the date of publication of this document, ISO had not received notice
of (a) patent(s) which may be required to implement this document. However, implementers are
cautioned that this may not represent the latest information, which may be obtained from the patent
database available at www.iso.org/patents. ISO shall not be held responsible for identifying any or all
such pa
...
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